WO2009157319A1 - Chamfering apparatus - Google Patents
Chamfering apparatus Download PDFInfo
- Publication number
- WO2009157319A1 WO2009157319A1 PCT/JP2009/060716 JP2009060716W WO2009157319A1 WO 2009157319 A1 WO2009157319 A1 WO 2009157319A1 JP 2009060716 W JP2009060716 W JP 2009060716W WO 2009157319 A1 WO2009157319 A1 WO 2009157319A1
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- WO
- WIPO (PCT)
- Prior art keywords
- substrate
- chamfering
- edge line
- laser beam
- condensing
- Prior art date
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Classifications
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/36—Removing material
- B23K26/40—Removing material taking account of the properties of the material involved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/08—Devices involving relative movement between laser beam and workpiece
- B23K26/082—Scanning systems, i.e. devices involving movement of the laser beam relative to the laser head
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K26/00—Working by laser beam, e.g. welding, cutting or boring
- B23K26/50—Working by transmitting the laser beam through or within the workpiece
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B29/00—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins
- C03B29/02—Reheating glass products for softening or fusing their surfaces; Fire-polishing; Fusing of margins in a discontinuous way
- C03B29/025—Glass sheets
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on liquid crystals, e.g. single liquid crystal display cells
- G02F1/1303—Apparatus specially adapted to the manufacture of LCDs
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K2103/00—Materials to be soldered, welded or cut
- B23K2103/50—Inorganic material, e.g. metals, not provided for in B23K2103/02 – B23K2103/26
- B23K2103/54—Glass
Definitions
- the present invention relates to a method for chamfering an edge line (ridge line) formed on an end face of a brittle material substrate, and more particularly, a chamfering method and a chamfering apparatus for performing R chamfering or C chamfering of an edge line by laser beam irradiation.
- the brittle material substrates to be processed include substrates such as quartz, single crystal silicon, sapphire, semiconductor wafers, and ceramics in addition to glass substrates.
- Brittle material substrates such as glass substrates are used in various products by processing them into desired dimensions and shapes.
- processing of brittle material substrates is performed by existing processing technologies such as dicing, wheel scribe, laser scribe, etc., but the edge line of the substrate end face divided by these processing technologies is very sharp and a slight impact is applied. Even alone, defects such as chipping and microcracks occur.
- FPD flat panel display
- fragments generated due to chipping of edges cause damage to the surface of the FPD substrate, which affects the product yield. Therefore, chamfering is performed along the edge lines in order to prevent chipping of the edge portion of the substrate that occurs after the substrate is divided.
- One conventional chamfering process is a wet polishing method in which a large amount of water is supplied and polished with a diamond grindstone.
- minute cracks remain continuously on the chamfered surface formed by the wet polishing method, and the strength of the chamfered surface is significantly lower than the surroundings.
- a heating / melting method in which a laser beam is scanned along the edge line to be chamfered, and the edge is heated and melted by moving the focal point of the laser beam along the edge line, thereby performing chamfering.
- a method is disclosed in which chamfering is performed by heating the vicinity of a ridge line portion with a laser to soften and round the ridge line portion while keeping the entire glass member at a temperature higher than room temperature (remaining heat) (see Patent Document 1). ).
- FIG. 8 is a cross-sectional view showing a laser irradiation state when chamfering is performed by a heat melting method using a CO 2 laser light source.
- a heat melting method using a CO 2 laser light source In advance, along the edge line 51 that chamfers the glass substrate 10 that has been gradually heated to a predetermined temperature lower than the softening temperature by using a heater (not shown) and then maintained at the predetermined temperature.
- the laser light from the CO 2 laser light source 50 is condensed by the condenser lens 53, and the focal point is scanned in the vicinity of the processing portion. At that time, by adjusting the laser output and the scanning speed, the edge portion irradiated with the laser becomes high temperature and softens, and thereby the edge portion irradiated with the laser is processed to be rounded.
- a laser beam is irradiated near the edge and heated to generate a crack in the glass substrate 10, and the laser beam is relatively edge-lined.
- a laser scribing method is disclosed in which a crack is grown along an edge line by scanning in a direction, and chamfering is performed by separating the vicinity of the edge from a glass substrate (Patent Document 2).
- FIG. 9 is a diagram showing a laser irradiation state when chamfering is performed by laser scribing using a CO 2 laser light source.
- the laser light from the CO 2 laser light source 50 is locally irradiated near the edge line 51 of the glass substrate 10 by the condenser lens 53 and heated at a temperature lower than the softening temperature.
- the crack 52 is generated by the thermal stress accompanying the local thermal expansion.
- sequentially generated cracks 52 grow along the edge line 51, and the vicinity of the edge (corner portion) including the edge line 51 is separated.
- Patent Document 2 it is said that by performing chamfering by laser scribing, chamfering that does not require high productivity and a cleaning step can be performed without impairing the accuracy of the glass substrate.
- FIG. 10 is an enlarged view of a processed cross section when chamfering is performed by laser scribing using a CO 2 laser.
- the corner portion U of the glass substrate 10 is separated (peeled) by the chamfering process, and the edge line 53 of the glass substrate 10 disappears together with the corner portion U, but a new chamfered surface 54 is formed.
- the cross-sectional shape of the chamfered surface 54 is observed, it has an arcuate inverted R surface that is recessed toward the glass substrate 10 side.
- two edge lines 57 and 58 are formed at the intersections of the glass substrate S with the substrate surfaces 55 and 56. These edge lines 57 and 58 have improved edge sharpness compared to the original edge line 53, but if the dent becomes large, a sharp edge will be formed.
- TAB tape may be wired immediately above the edge lines 57 and 58. If a sharp edge remains in this area after chamfering, the TAB tape breaks. Is likely to be. For this reason, the chamfered surface 54 is required to be a C surface where the chamfered portion is a flat surface, or an R surface which is convex toward the outside.
- the present invention provides a chamfering apparatus capable of forming a chamfered surface formed by laser irradiation into a curved surface that is convex toward the C or R surface, or the outside of the substrate, instead of the reverse R surface. With the goal.
- the chamfering processing apparatus of the present invention made to solve the above problems is convex toward the C-plane, R-plane, and the outside of the substrate by scanning the condensing point of the laser beam using a special optical element unit.
- the chamfering of the curved surface is realized.
- the chamfering apparatus of the present invention is a chamfering apparatus that chamfers a brittle material substrate, and includes a laser light source, a condensing member that condenses the laser beam emitted from the laser light source and guides the substrate to the substrate, A beam deflecting unit that is provided on the optical path of the laser beam from the laser light source to the substrate through the condensing member, deflects the incident optical path of the laser beam, and scans the position of the condensing point formed by the laser beam; With respect to the edge line to be chamfered, a laser beam is irradiated toward the edge line from diagonally forward of two adjacent surfaces having the edge line as an end, and the condensing point is formed on the substrate surface in the vicinity of the edge line or inside the substrate.
- a substrate support portion that supports the substrate so as to be scanned along a surface intersecting with the edge line, and the condensing member is configured to run a condensing point formed on the surface intersecting with the edge line.
- Trajectory is set to be an optical element unit comprising an optical parameter of the concave or straight as viewed from the light collector.
- the brittle material substrate includes a glass substrate, a quartz substrate, a silicon substrate, a sapphire substrate, a silicon or other semiconductor wafer, and a ceramic substrate.
- the laser light source has different absorption characteristics of the substrate depending on the wavelength of the laser light
- the laser light source to be used is selected depending on the type of the substrate and whether the substrate is scanned from the substrate surface or the inside of the substrate. For example, when scanning the vicinity of the surface of a glass substrate, it is preferable to use a CO 2 laser or CO laser whose substrate material has a large absorption coefficient (however, if the substrate surface is scanned, the laser only needs to be condensed).
- a YAG laser Nd-YAG laser, Er-YAG laser, etc.
- a YAG laser Nd-YAG laser, Er-YAG laser, etc.
- a lens unit or a mirror unit can be used as the optical element unit serving as a light collecting member.
- the optical parameter of the optical element unit (lens unit, mirror unit) used in the present invention the scanning locus of the condensing point formed by the condensing member when the incident optical path is deflected by the beam deflecting unit is the condensing member.
- An optical parameter having an optical parameter that becomes concave or linear when viewed from the side is used.
- the optical parameters for obtaining such a scanning locus can be obtained by geometric calculation, analysis by a finite element method, or trial and error design.
- the optical element unit here is not limited to a single lens, but has a structure in which a plurality of lenses and mirrors are arranged in series, such as a combination lens.
- the shape of the light collecting member is concave when viewed from the light collecting member.
- the optical system is configured such that the laser beam emitted from the laser light source is irradiated from the obliquely forward direction of the substrate to the edge line for chamfering the substrate through the beam deflecting unit and the condensing member. Is placed.
- the beam deflecting unit deflects an incident optical path of the laser beam emitted from the laser light source to the condensing member.
- the condensing member is deflected in the incident optical path by the beam deflecting unit, so that the traveling direction of the laser beam emitted from the condensing member is deflected.
- the position of the condensing point formed by the laser beam emitted from the condensing member is scanned in the vicinity of the edge line of the substrate.
- the condensing member uses an optical element unit having an optical parameter in which the scanning locus of the condensing point formed on the surface intersecting the edge line is concave or linear when viewed from the condensing member, the edge The scanning locus of the condensing point near the line is concave or linear when viewed from the condensing member.
- the scanning locus is a straight line
- chamfering of the C surface is performed, and when the scanning locus is concave when viewed from the light collecting member, an R surface, a paraboloid, an elliptical surface, and the like determined according to the concave shape.
- a convex chamfering process is performed.
- the chamfered surface formed by laser irradiation can be a C surface, an R surface, or a curved surface that is convex toward the outside of the substrate.
- the light collecting member may be an optical element unit including an f ⁇ lens or an f ⁇ mirror. Since the scanning locus of the condensing point is a straight line when the condensing member is an optical element unit composed of an f ⁇ lens or an f ⁇ mirror, the C surface can be chamfered.
- the light condensing member may be an optical element unit in which a non-telecentric f ⁇ lens and a plane parallel plate are combined.
- the condensing member is an optical element unit that is a combination of a non-telecentric f ⁇ lens and a plane parallel plate, the scanning locus of the condensing point is convex toward the outside of the substrate, so that the convex chamfering is performed. be able to.
- a feeding mechanism for moving the substrate side or the laser beam side so that the condensing point relatively moves along the edge line may be provided. According to this, the entire edge line can be chamfered along the edge line.
- the substrate support portion includes a table for horizontally placing the substrate, and the light condensing member and the beam deflection portion are inclined at 45 degrees with respect to the edge line of the horizontally placed substrate as a central direction. You may make it arrange
- the beam deflection unit may be constituted by a galvanometer mirror or a polygon mirror.
- the laser beam directed to the condensing member can be deflected accurately and with high reproducibility by a simple mechanism by the swinging motion of the reflecting mirror and in the case of a polygon mirror by the rotating motion of the reflecting mirror.
- a depth adjusting mechanism for adjusting the position of the condensing point in the depth direction with respect to the substrate by moving the position of the substrate or the condensing member in the laser beam irradiation direction may be further provided.
- deep chamfering is performed, shallow chamfering is performed, deep chamfering is performed by gradually changing the depth, and from the origin of the edge line while adjusting the scanning position in the depth direction. By relatively moving relative to the end point continuously, it is possible to perform chamfering without difficulty.
- substrate which is one Embodiment of this invention.
- the enlarged view of the scanning optical system of FIG. The block diagram of the control system of the chamfering apparatus of FIG.
- FIG. 1 is a view showing a brittle material substrate chamfering apparatus LM according to an embodiment of the present invention.
- FIG. 2 is an enlarged view showing the scanning optical system of FIG.
- the chamfering apparatus LM is provided with a slide table 2 that reciprocates in the front-rear direction of the paper surface (hereinafter referred to as the Y direction) in FIG. 1 along a pair of guide rails 3 and 4 arranged in parallel on a horizontal base 1. ing.
- a screw screw 5 is arranged between the guide rails 3 and 4 along the front-rear direction, and a stay 6 fixed to the slide table 2 is screwed to the screw screw 5.
- the slide table 2 is formed so as to reciprocate in the Y direction along the guide rails 3 and 4 by forward and reverse rotation (not shown).
- a horizontal pedestal 7 is arranged so as to reciprocate in the left-right direction in FIG.
- a screw 10 that is rotated by a motor 9 is threaded through a stay 10a that is fixed to the pedestal 7, and the pedestal 7 moves along the guide rail 8 in the X direction when the screw 10 rotates forward and backward. Move back and forth.
- a lifting table 11 for adjusting the height direction (hereinafter referred to as Z direction) and a suction table 12 on which a suction chuck is mounted are provided.
- a glass substrate G is mounted on the suction table 12. Set in a horizontal state. At this time, the edge line EL to be chamfered is directed upward, and is supported so that a laser beam to be described later is incident obliquely from a 45 degree direction.
- the glass substrate G is positioned using the camera 20 and alignment marks (not shown) formed on the substrate so that the edge line EL is directed in the Y direction.
- positioning may be performed by providing a positioning guide on the surface of the suction table 12 and bringing a part of the substrate into contact with the guide.
- a laser light source 13 Above the glass substrate G, a laser light source 13, a galvanometer mirror 14 (beam deflection unit), and a lens unit 15 (light condensing member) are attached.
- the galvanometer mirror 14 and the lens unit 15 constitute a scanning optical system 16.
- An Nd-YAG laser light source is used as the laser light source 13.
- the laser light source 13 In the XZ plane, the laser light source 13 has an emission direction directed obliquely downward 45 degrees to the left.
- the galvanometer mirror 14 has a reflecting mirror disposed on the optical path of the laser beam emitted from the laser light source 13, emits the laser beam obliquely downward to the right, and changes the beam emitting direction by the swinging motion of the reflecting mirror. Deflection in the XZ plane.
- the range of the oscillating motion of the galvanometer mirror 14 at this time is adjusted according to the angle range for chamfering the workpiece.
- the lens unit 15 condenses the laser beam emitted from the galvanometer mirror 14 to form a condensing point. Further, as a result of the emission direction being deflected by the galvanometer mirror 14 and the incident position of the laser beam on the lens unit 15 being scanned, the condensing point of the laser beam emitted from the lens unit 15 is within the XZ plane (that is, the edge). Scanning is performed in a plane orthogonal to the line EL, and the scanning locus becomes concave (convex toward the outside of the substrate) when viewed from the lens unit side. For example, as shown in FIG. 2, the scanning locus of the condensing point is an arc R0 connecting F0, F1, and F2 due to the swinging motion of the galvanometer mirror 14.
- the lens unit 15 is a lens unit that is a combination of a non-telecentric f ⁇ lens and a plane-parallel plate, so that the scanning locus of the condensing point is shaped like an arc R0 connecting F0, F1, and F2 (on the outside of the substrate). Can be convex).
- the galvano mirror 14 and the lens unit 15 are fixed to the frame of the apparatus, and the position of the condensing point and the scanning locus of the condensing point formed by these optical elements are a constant position and locus, A function representing the coordinates of the condensing point (coordinates of F0, F1, and F2) and the locus (arc R0) can be obtained by geometric calculation (or by actual measurement).
- the focusing point F0 is set on the edge line EL or in the vicinity of the edge line EL by adjusting the position in the XYZ directions by the slide table 2, the base 7, and the lifting table 11. Match the position of the planned surface.
- FIG. 3 is a block diagram of the control system.
- the chamfering apparatus LM includes a control unit 50 including a memory that stores various control data, setting parameters, and a program (software), and a CPU that executes arithmetic processing.
- the control unit 50 includes a table driving unit 51 that drives a motor (such as the motor 9) for positioning and moving the slide table 2, the pedestal 7, and the lifting table 11, and a suction mechanism drive that drives the suction chuck of the suction table 12.
- the drive system of the part 52, the beam deflection part drive part 53 which drives the galvanometer mirror 14, and the laser drive part 54 which performs laser irradiation is controlled.
- the control unit 50 is connected to an input unit (not shown) including a keyboard and a mouse, and a display unit (not shown) that performs various displays on the display screen, and displays necessary information on the screen. Necessary commands and settings can be input.
- the substrate G is placed on the suction table 12 and the position is adjusted using the camera 20. Then, the edge line EL is directed in the Y direction, and the position is adjusted by the slide table 2, the pedestal 7, and the lifting table 11 so that the coordinates of the condensing point F0 are at the depth of the processing planned surface on or near the edge line EL. . In this case, if the pedestal 7 and the lifting table 11 are moved in conjunction with each other, the substrate can be moved in an oblique direction, so that it can be used as a position adjustment mechanism in the depth direction of the substrate at the focal point F0. .
- the galvanometer mirror 14 and the laser light source 13 are driven to scan the laser beam in the vicinity of the edge line.
- the substrate material is melted and removed by ablation near the condensing point, and a chamfered surface is formed.
- the slide table 2 When chamfering the entire length of the edge line EL, the slide table 2 is sent at a constant speed, and the substrate G is moved in the Y direction with respect to the scanning surface (XZ surface) of the laser beam. At this time, the slide table 2 may be intermittently fed so that the laser beam is scanned a plurality of times at the same processing position.
- chamfering is performed in multiple steps. That is, as shown in FIG. 4, the first chamfering process is performed while setting the condensing point at a shallow position close to the edge line EL and moving in the Y direction. The same process is repeated by gradually shifting to the inner side.
- FIG. 5 is an enlarged view of the scanning optical system when the condensing member is changed from the lens unit 15 to the f ⁇ lens 15a.
- the C surface can be chamfered.
- the optical parameters such as the curved surface shape, the radius of curvature, and the refractive index of the lens unit 15 are appropriately designed, a free-form surface lens that can draw a desired scanning locus can be created.
- the chamfered surface can be a parabolic surface, an elliptical surface, or an arbitrary free-form surface.
- the same trajectory as the scanning trajectory by the lens can be drawn using a reflecting mirror instead of the lens.
- the same chamfering can be performed even if the beam deflecting unit is changed from a galvanometer mirror to a polygon mirror.
- FIG. 6 shows a modification of the scanning optical system.
- the focal position is scanned by the galvanometer mirror 14, but here, instead of the galvanometer mirror 14, a swing mechanism (not shown) is attached to the plane parallel plate of the lens unit 15 to swing this.
- the scanning trajectory is substantially the same as in FIG.
- FIG. 7 is an enlarged view of the scanning optical system when the condensing member is replaced with a unit 15b composed of a non-telecentric f ⁇ mirror and a plane parallel plate.
- the unit 15b also has a shape like an arc R0 that connects the scanning locus of the condensing point to the above-described F0, F1, and F2. It can be convex toward the outside of the substrate). Even when these scanning optical systems are used, the same chamfering as in FIG. 2 can be performed.
- an aspherical lens or aspherical mirror having appropriate optical parameters using the finite element method, it is equivalent to a single lens or a single mirror alone and a combination lens of a non-telecentric f ⁇ lens and a plane parallel plate. It is also possible to form an optical system.
- the slide table 2 on which the substrate G is placed is moved in the chamfering apparatus LM in FIG. 2, but the scanning optical system (galvano mirror 14, lens unit 15) side is moved. It can also be moved.
- the chamfering process for the glass substrate has been described above.
- the same chamfering process can be realized by selecting a laser light source that can be used according to the absorption characteristics of each substrate material. Can do.
- the present invention is used for chamfering a brittle material substrate such as a glass substrate.
Abstract
Description
ここで加工対象となる脆性材料基板には、ガラス基板のほか、石英、単結晶シリコン、サファイヤ、半導体ウェハ、セラミック等の基板が含まれる。 The present invention relates to a method for chamfering an edge line (ridge line) formed on an end face of a brittle material substrate, and more particularly, a chamfering method and a chamfering apparatus for performing R chamfering or C chamfering of an edge line by laser beam irradiation. About.
Here, the brittle material substrates to be processed include substrates such as quartz, single crystal silicon, sapphire, semiconductor wafers, and ceramics in addition to glass substrates.
そのため、基板を分断した後に発生する基板のエッジ部分の欠け等を防止するために、エッジラインに沿って面取り加工が行われている。 Brittle material substrates such as glass substrates are used in various products by processing them into desired dimensions and shapes. In general, processing of brittle material substrates is performed by existing processing technologies such as dicing, wheel scribe, laser scribe, etc., but the edge line of the substrate end face divided by these processing technologies is very sharp and a slight impact is applied. Even alone, defects such as chipping and microcracks occur. For example, in a glass substrate for a flat panel display (FPD), fragments generated due to chipping of edges cause damage to the surface of the FPD substrate, which affects the product yield.
Therefore, chamfering is performed along the edge lines in order to prevent chipping of the edge portion of the substrate that occurs after the substrate is divided.
特許文献2によれば、レーザスクライブによる面取り加工を行うことにより、ガラス基板の精度を損なうことなく、高い生産性と洗浄工程を必要としない面取り加工を施すことができるとされている。
According to
この面取り加工面54の断面形状を観察すると、ガラス基板10側に凹んだ円弧形状の逆R面を有している。面取り加工面54が凹んでいる結果、ガラス基板Sの基板表面55、56との交差部分には、2つのエッジライン57、58が形成されることになる。これらエッジライン57、58は、当初のエッジライン53に比べるとエッジの鋭さは改善されているが、それでも凹みが大きくなると、鋭利なエッジが形成されてしまうことになる。
特にフラットパネルディスプレイ用(FPD用)ガラス基板では、エッジライン57、58の直上にTABテープが配線されることがあり、面取り加工後に、この部分に鋭利なエッジが残っているとTABテープが断線される可能性が高くなる。
そのため、面取り加工面54は、凹みをなくし、面取り部分が平面であるC面、あるいは、外側に向けて凸状になるR面にすることが求められている。 The corner portion U of the
When the cross-sectional shape of the
In particular, for flat panel display (FPD) glass substrates, TAB tape may be wired immediately above the
For this reason, the
すなわち、本発明の面取り加工装置は、脆性材料基板の面取り加工を行う面取り加工装置であって、レーザ光源と、レーザ光源から放射されたレーザビームを集光して基板に導く集光部材と、レーザ光源から集光部材を介して基板に至るまでのレーザビームの光路上に設けられ、レーザビームの入射光路を偏向してレーザビームが形成する集光点の位置を走査させるビーム偏向部と、面取り加工を行うエッジラインに対し、エッジラインを端辺とする2つの隣接面の斜め前方からエッジラインに向けてレーザビームが照射され、エッジライン近傍の基板表面又は基板内部に前記集光点がエッジラインと交差する面に沿って走査されるように基板を支持する基板支持部とを備え、集光部材は、エッジラインと交差する面に形成される集光点の走査軌跡が集光部材からみて凹状又は直線状になる光学パラメータを有する光学素子ユニットからなるようにしている。 The chamfering processing apparatus of the present invention made to solve the above problems is convex toward the C-plane, R-plane, and the outside of the substrate by scanning the condensing point of the laser beam using a special optical element unit. The chamfering of the curved surface is realized.
That is, the chamfering apparatus of the present invention is a chamfering apparatus that chamfers a brittle material substrate, and includes a laser light source, a condensing member that condenses the laser beam emitted from the laser light source and guides the substrate to the substrate, A beam deflecting unit that is provided on the optical path of the laser beam from the laser light source to the substrate through the condensing member, deflects the incident optical path of the laser beam, and scans the position of the condensing point formed by the laser beam; With respect to the edge line to be chamfered, a laser beam is irradiated toward the edge line from diagonally forward of two adjacent surfaces having the edge line as an end, and the condensing point is formed on the substrate surface in the vicinity of the edge line or inside the substrate. A substrate support portion that supports the substrate so as to be scanned along a surface intersecting with the edge line, and the condensing member is configured to run a condensing point formed on the surface intersecting with the edge line. Trajectory is set to be an optical element unit comprising an optical parameter of the concave or straight as viewed from the light collector.
また、レーザ光源は、レーザ光の波長により基板の吸収特性が異なるので、基板の種類、基板表面から走査するか基板内部を走査するかによって、使用するレーザ光源を選択する。
例えば、ガラス基板に対し、表面付近を走査する場合には基板材料の吸収係数が大きいCO2レーザやCOレーザを用いるのが好ましい(但し基板表面を走査する場合はレーザを集光しさえすれば吸収の小さいレーザでも使用できる)。一方、基板内部を走査する場合には基板材料の吸収係数が小さいYAGレーザ(Nd-YAGレーザ、Er-YAGレーザ等)を用いるのが好ましい。 Here, the brittle material substrate includes a glass substrate, a quartz substrate, a silicon substrate, a sapphire substrate, a silicon or other semiconductor wafer, and a ceramic substrate.
Further, since the laser light source has different absorption characteristics of the substrate depending on the wavelength of the laser light, the laser light source to be used is selected depending on the type of the substrate and whether the substrate is scanned from the substrate surface or the inside of the substrate.
For example, when scanning the vicinity of the surface of a glass substrate, it is preferable to use a CO 2 laser or CO laser whose substrate material has a large absorption coefficient (however, if the substrate surface is scanned, the laser only needs to be condensed). (It can be used with lasers with low absorption) On the other hand, when scanning the inside of the substrate, it is preferable to use a YAG laser (Nd-YAG laser, Er-YAG laser, etc.) having a small absorption coefficient of the substrate material.
上記発明において、集光部材はfθレンズ又はfθミラーからなる光学素子ユニットであってもよい。
集光部材をfθレンズ又はfθミラーからなる光学素子ユニットにした場合の集光点の走査軌跡は、直線状になるので、C面の面取り加工を行うことができる。 (Other problem solving means and effects)
In the above invention, the light collecting member may be an optical element unit including an fθ lens or an fθ mirror.
Since the scanning locus of the condensing point is a straight line when the condensing member is an optical element unit composed of an fθ lens or an fθ mirror, the C surface can be chamfered.
集光部材をテレセントリックでないfθレンズと平面平行板との組み合わせた光学素子ユニットにした場合の集光点の走査軌跡は、基板外側に向けて凸状になるので、当該凸状の面取り加工を行うことができる。 In the above invention, the light condensing member may be an optical element unit in which a non-telecentric fθ lens and a plane parallel plate are combined.
When the condensing member is an optical element unit that is a combination of a non-telecentric fθ lens and a plane parallel plate, the scanning locus of the condensing point is convex toward the outside of the substrate, so that the convex chamfering is performed. be able to.
これによれば、エッジラインに沿って、エッジライン全体の面取り加工を行うことができる。 In the above invention, a feeding mechanism for moving the substrate side or the laser beam side so that the condensing point relatively moves along the edge line may be provided.
According to this, the entire edge line can be chamfered along the edge line.
これによれば、基板を水平なテーブル上に安定に載置したまま面取り加工を行うことができる。 In the above invention, the substrate support portion includes a table for horizontally placing the substrate, and the light condensing member and the beam deflection portion are inclined at 45 degrees with respect to the edge line of the horizontally placed substrate as a central direction. You may make it arrange | position so that a condensing point may be scanned.
According to this, it is possible to perform chamfering while the substrate is stably placed on a horizontal table.
ガルバノミラーの場合は反射鏡の揺動運動により、また、ポリゴンミラーの場合は反射鏡の回転運動により、簡単な機構で集光部材に向かうレーザビームを正確かつ再現性よく偏向させることができる。 In the above invention, the beam deflection unit may be constituted by a galvanometer mirror or a polygon mirror.
In the case of a galvano mirror, the laser beam directed to the condensing member can be deflected accurately and with high reproducibility by a simple mechanism by the swinging motion of the reflecting mirror and in the case of a polygon mirror by the rotating motion of the reflecting mirror.
これによれば、集光点の基板内の深さ位置を、面取り加工の加工予定深さに合わせて面取り加工を行うことにより、所望の深さの面取り加工を行うことができる。
また、深い面取り加工を行うような場合に、浅い面取り加工を行い、徐々に深さを変化させて深い面取り加工を行うようにして、深さ方向の走査位置を調整しながらエッジラインの起点から終点まで連続的に相対移動させることにより、無理のない面取り加工を行うことができる。 In the above invention, a depth adjusting mechanism for adjusting the position of the condensing point in the depth direction with respect to the substrate by moving the position of the substrate or the condensing member in the laser beam irradiation direction may be further provided. .
According to this, it is possible to perform chamfering at a desired depth by chamfering the depth position of the condensing point in the substrate in accordance with the planned chamfering depth.
In addition, when deep chamfering is performed, shallow chamfering is performed, deep chamfering is performed by gradually changing the depth, and from the origin of the edge line while adjusting the scanning position in the depth direction. By relatively moving relative to the end point continuously, it is possible to perform chamfering without difficulty.
7 台座
11 昇降テーブル
12 吸着テーブル
13 レーザ光源
14 ガルバノミラー(ビーム偏向部)
14aポリゴンミラー
15 レンズユニット(集光部材)
15afθレンズ
15bユニット
16 走査光学系 2 Slide table 7
なお、本発明は、以下に説明するような実施形態に限定されるものではなく、本発明の趣旨を逸脱しない範囲で種々の態様が含まれることはいうまでもない。 Hereinafter, embodiments of the present invention will be described with reference to the drawings. Here, the chamfering process for the glass substrate will be described.
Note that the present invention is not limited to the embodiments described below, and it goes without saying that various aspects are included without departing from the spirit of the present invention.
なお、ガラス基板Gはカメラ20および基板に形成されたアライメントマーク(不図示)を利用して位置決めを行い、エッジラインELをY方向に向けるようにする。基板Gが一定である場合には、吸着テーブル12の表面に位置決め用のガイドを設けておき、基板の一部をガイドに当接させるようにして位置決めを行ってもよい。 On the
The glass substrate G is positioned using the
レーザ光源13にはNd-YAGレーザ光源が用いられる。レーザ光源13はXZ面内で出射方向が左斜め下方45度に向けられている。
ガルバノミラー14は、レーザ光源13から出射されるレーザビームの光路上に反射鏡を配置してあり、レーザビームを右斜め下方に出射するとともに、反射鏡の揺動運動により、ビームの出射方向をXZ面内で偏向する。このときのガルバノミラー14の揺動運動の範囲は、加工対象物の面取り加工を行う角度範囲に応じて調整する。
レンズユニット15は、ガルバノミラー14から出射されるレーザビームを集光し、集光点を形成する。また、ガルバノミラー14によって出射方向が偏向されて、レーザビームのレンズユニット15への入射位置が走査される結果、レンズユニット15から出射されるレーザビームによる集光点は、XZ面内(すなわちエッジラインELに直交する面内)で走査され、走査軌跡がレンズユニット側から見て凹状(基板外側に向けて凸状)になる。
例えば図2に示すように、ガルバノミラー14の揺動運動により集光点の走査軌跡はF0、F1、F2を結ぶ弧R0となる。 Above the glass substrate G, a
An Nd-YAG laser light source is used as the
The
The
For example, as shown in FIG. 2, the scanning locus of the condensing point is an arc R0 connecting F0, F1, and F2 due to the swinging motion of the
この場合、台座7と昇降テーブル11とを連動して移動させれば、基板を斜め方向に移動することができるので、集光点F0の基板の深さ方向の位置調整機構として用いることができる。
続いて、ガルバノミラー14およびレーザ光源13を駆動してレーザビームをエッジライン近傍で走査する。その結果、集光点近傍でアブレーションにより基板材料が溶融除去され、面取り加工面が形成される。 Next, a chamfering operation by the chamfering apparatus LM will be described. The substrate G is placed on the suction table 12 and the position is adjusted using the
In this case, if the
Subsequently, the
図5は、集光部材をレンズユニット15から、fθレンズ15aに代えたときの走査光学系の拡大図である。この場合は、集光点の走査軌跡がXZ面で直線状になるのでC面の面取り加工を行うことができる。 Next, a modified embodiment will be described.
FIG. 5 is an enlarged view of the scanning optical system when the condensing member is changed from the
ユニット15bについても、図2で説明したテレセントリックでないfθレンズと平面平行板との組み合わせのときと同様に、集光点の走査軌跡を上述したF0、F1、F2を結ぶ弧R0のような形状(基板外側に向けて凸状)にすることができる。
これらの走査光学系を用いた場合も、図2と同様の面取り加工を行うことができる。 FIG. 7 is an enlarged view of the scanning optical system when the condensing member is replaced with a
Similarly to the combination of the non-telecentric fθ lens and the plane parallel plate described with reference to FIG. 2, the
Even when these scanning optical systems are used, the same chamfering as in FIG. 2 can be performed.
Claims (8)
- 脆性材料基板の面取り加工を行う面取り加工装置であって、
レーザ光源と、
前記レーザ光源から放射されたレーザビームを集光して前記基板に導く集光部材と、
前記レーザ光源から前記集光部材を介して前記基板に至るまでのレーザビームの光路上に設けられ、レーザビームの入射光路を偏向してレーザビームが形成する集光点の位置を走査させるビーム偏向部と、
面取り加工を行うエッジラインに対し、前記エッジラインを端辺とする2つの隣接面の斜め前方からエッジラインに向けてレーザビームが照射され、エッジライン近傍の基板表面又は基板内部に前記集光点がエッジラインと交差する面に沿って走査されるように基板を支持する基板支持部とを備え、
前記集光部材は、エッジラインと交差する面に形成される集光点の走査軌跡が集光部材からみて凹状又は直線状になる光学パラメータを有する光学素子ユニットからなることを特徴とする面取り加工装置。 A chamfering device for chamfering a brittle material substrate,
A laser light source;
A condensing member that condenses the laser beam emitted from the laser light source and guides it to the substrate;
Beam deflection is provided on the optical path of the laser beam from the laser light source to the substrate through the condensing member, and deflects the incident optical path of the laser beam to scan the position of the condensing point formed by the laser beam. And
With respect to the edge line to be chamfered, a laser beam is irradiated toward the edge line from diagonally forward of two adjacent surfaces having the edge line as an end, and the condensing point is formed on the substrate surface in the vicinity of the edge line or inside the substrate. A substrate support for supporting the substrate so that the substrate is scanned along a plane intersecting the edge line,
The condensing member is composed of an optical element unit having an optical parameter in which a scanning locus of a condensing point formed on a surface intersecting with an edge line is concave or linear when viewed from the condensing member. apparatus. - 集光部材が、fθレンズ又はfθミラーからなる光学素子ユニットである請求項1に記載の面取り加工装置。 2. The chamfering apparatus according to claim 1, wherein the light collecting member is an optical element unit including an fθ lens or an fθ mirror.
- 集光部材が、テレセントリックでないfθレンズと平面平行板とを組み合わせた光学素子ユニットである請求項1に記載の面取り加工装置。 2. The chamfering apparatus according to claim 1, wherein the condensing member is an optical element unit in which a non-telecentric fθ lens and a plane parallel plate are combined.
- 前記集光点が前記エッジラインに沿って相対移動するように基板側又はレーザビーム側を移動させる送り機構を備えた請求項1に記載の面取り加工装置。 2. The chamfering apparatus according to claim 1, further comprising a feed mechanism that moves the substrate side or the laser beam side so that the condensing point relatively moves along the edge line.
- 前記基板支持部は基板を水平に載置するテーブルからなり、前記集光部材およびビーム偏向部は水平に載置された基板のエッジラインに対し斜め45度方向を中心方向にして前記集光点が走査されるように配置される請求項1に記載の面取り加工装置。 The substrate support portion is composed of a table for horizontally placing the substrate, and the light condensing member and the beam deflecting portion are the light condensing points with a 45 ° oblique direction as a center direction with respect to the edge line of the horizontally placed substrate. The chamfering apparatus according to claim 1, wherein the chamfering apparatus is arranged to be scanned.
- ビーム偏向部はガルバノミラー又はポリゴンミラーにより構成される請求項1に記載の面取り加工装置。 2. The chamfering apparatus according to claim 1, wherein the beam deflection unit is constituted by a galvanometer mirror or a polygon mirror.
- 前記集光部材の前記平面平行板が揺動可能に構成され、ビーム偏向部として兼用される請求項3に記載の面取り加工装置。 4. The chamfering apparatus according to claim 3, wherein the plane parallel plate of the light collecting member is configured to be swingable and also serves as a beam deflecting unit.
- 前記基板又は前記集光部材の位置をレーザビームの照射方向に移動することにより前記集光点の基板に対する深さ方向の位置を調整する深さ調整機構をさらに備えた請求項1に記載の面取り加工装置。 2. The chamfering according to claim 1, further comprising a depth adjusting mechanism that adjusts a position of the condensing point in a depth direction with respect to the substrate by moving a position of the substrate or the condensing member in a laser beam irradiation direction. Processing equipment.
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CN102123817A (en) | 2011-07-13 |
JP5320395B2 (en) | 2013-10-23 |
KR101306673B1 (en) | 2013-09-10 |
KR20110030622A (en) | 2011-03-23 |
TW201002460A (en) | 2010-01-16 |
CN102123817B (en) | 2016-04-27 |
JPWO2009157319A1 (en) | 2011-12-08 |
TWI414383B (en) | 2013-11-11 |
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