JPH09225665A - Method for chamfering glass substrate, glass substrate for liquid crystal panel using the method and liquid crystal panel - Google Patents
Method for chamfering glass substrate, glass substrate for liquid crystal panel using the method and liquid crystal panelInfo
- Publication number
- JPH09225665A JPH09225665A JP8035245A JP3524596A JPH09225665A JP H09225665 A JPH09225665 A JP H09225665A JP 8035245 A JP8035245 A JP 8035245A JP 3524596 A JP3524596 A JP 3524596A JP H09225665 A JPH09225665 A JP H09225665A
- Authority
- JP
- Japan
- Prior art keywords
- glass substrate
- ridge
- liquid crystal
- chamfering
- crystal panel
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03B—MANUFACTURE, SHAPING, OR SUPPLEMENTARY PROCESSES
- C03B33/00—Severing cooled glass
- C03B33/09—Severing cooled glass by thermal shock
- C03B33/091—Severing cooled glass by thermal shock using at least one focussed radiation beam, e.g. laser beam
Abstract
Description
【０００１】[0001]
【発明の属する技術分野】本発明は、ガラス基板の面取
り方法に係わるもので、特に切断もしくは割断後に稜線
部を分離除去する面取り方法と、その面取り方法を用い
て加工した液晶パネル用ガラス基板及び液晶パネルに関
する。BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a glass substrate chamfering method, and more particularly to a chamfering method for separating and removing a ridge line portion after cutting or cutting, and a glass substrate for a liquid crystal panel processed by using the chamfering method. Liquid crystal panel.
【０００２】[0002]
【従来の技術】ガラス基板は電子デバイス等に幅広く活
用されている基板材料であり、用途により所定の寸法形
状に加工されている。加工形状は直線的な稜線部を有す
る切断形状が多く、その加工方法はダイシング法による
切断や、スクライブ・ブレーク法による割断などにより
行われており、一般的には割断による方法が用いられて
いる。図１１に、従来技術による割断後のガラス基板１
の斜視図を示す。割断されたガラス基板１の稜線部３０
は鋭利な断面形状になり易く、チッピング３１やマイク
ロクラック３２が発生するため、面取り加工を施しこれ
らの発生を防いでいた。特に、図８の斜視図に示すよう
な液晶パネル用ガラス基板１００においては、割断後に
割断端面１０１を利用した位置決めや搬送時における接
触および衝撃によるチッピング等が発生し、欠け落ちた
ガラス粉によりガラス基板１００を傷つけるなど製品不
良を発生していた。また、液晶パネル用ガラス基板１０
０に形成された電極パターン１０３にＴＡＢテープ９０
を実装し、基板稜線部１０２の付近で折り曲げた場合
は、ＴＡＢテープ９０の回路パターン９１が鋭利な基板
稜線部１０２により切断され断線することがあるため、
基板稜線部１０２の面取り加工が重要視されていた。2. Description of the Related Art A glass substrate is a substrate material that is widely used in electronic devices and the like, and is processed into a predetermined size and shape depending on the application. Most of the processing shapes are cutting shapes with straight ridges, and the processing method is cutting by dicing method or cleaving by scribe / break method. Generally, the cutting method is used. . FIG. 11 shows a glass substrate 1 after cutting according to the prior art.
FIG. Ridge portion 30 of the cut glass substrate 1
Has a sharp cross-sectional shape, and chippings 31 and microcracks 32 are generated. Therefore, a chamfering process is performed to prevent these from occurring. In particular, in the glass substrate 100 for a liquid crystal panel as shown in the perspective view of FIG. 8, after cutting, chipping due to contacting and impact during positioning using the cleaved end face 101, transportation, and the like occurs, and glass is broken by the glass powder. Product defects such as damage to the substrate 100 occurred. Further, the glass substrate 10 for liquid crystal panel
TAB tape 90 on the electrode pattern 103 formed on
When the board is mounted and bent near the board ridge line portion 102, the circuit pattern 91 of the TAB tape 90 may be cut and broken by the sharp board ridge line portion 102.
Chamfering of the substrate ridge line portion 102 has been emphasized.
【０００３】図９に、従来の面取り加工方法の正面図を
示す。回転軸２０２に適当な角度で成形された研削砥石
２０３を取り付け、回転方向２０４に回転させ、ガラス
基板１の稜線部をあてながら搬送することで適度な大き
さに研削し、面取り面２０１を形成していた。しかしな
がら、このような加工方法では研削により除去されたガ
ラス基板稜線部が細かな研削粉となって周辺環境を汚染
し、さらにはガラス基板１へ付着するため面取り加工後
に洗浄工程を必要としていた。また、強固に付着したガ
ラス粉は洗浄では除去できずに製品の不良発生の原因と
なっていた。また、研削砥石２０３は加工が進むにつれ
摩耗し、加工形状が損なわれるなどの不具合を生じてい
た。FIG. 9 shows a front view of a conventional chamfering method. A grinding wheel 203 formed at an appropriate angle is attached to the rotary shaft 202, rotated in the rotation direction 204, and conveyed while applying the ridge line portion of the glass substrate 1 to grind the chamfered surface 201 to an appropriate size. Was. However, in such a processing method, the ridge line portion of the glass substrate removed by grinding becomes fine grinding powder to contaminate the surrounding environment, and further adheres to the glass substrate 1, which requires a cleaning step after chamfering. Further, the glass powder adhered firmly cannot be removed by washing, which causes a defective product. In addition, the grinding wheel 203 was worn as the processing progressed, and the processing shape was impaired.
【０００４】そこで、クリーンな環境でしかも工具摩耗
のない加工方法として、図１０の正面図に示すようなガ
ラス基板１の稜線部３００を含む付近にレーザ光を照射
し、加熱溶融した後、稜線部をＲ形状に固化させること
により面取りを施す方法（特開平２−４８４２３号公
報、特開平２−２４１６８４号公報）が提案されてい
た。Therefore, as a processing method in a clean environment without tool wear, the vicinity of the glass substrate 1 including the ridge line portion 300 as shown in the front view of FIG. There has been proposed a method of chamfering by solidifying a portion into an R shape (Japanese Patent Laid-Open Nos. 2-48423 and 2-241684).
【０００５】[0005]
【発明が解決しようとする課題】しかし上記従来技術で
は、図１０に示すようにレーザ光２によってガラス基板
１の稜線部３００を局所的に加熱・溶融した後、自然冷
却することで拡大図（図１２）に示す稜線部３０１のよ
うなＲ形状に固化しているため、固化したＲ形状の稜線
部３０１はガラス基板１の研磨平面３０２にまでおよん
でしまい、ガラス基板１の平坦度を損なうなどの不具合
が生じていた。特に、液晶パネル用ガラス基板において
は、上記平坦度を維持できないと、図８に示す基板上に
形成された電極パターン１０３にＴＡＢテープ９０を実
装した際、電極パターン１０３との接続が不良になった
り、密着性が悪くなるなど製品品質を著しく低下させて
しまっていた。However, in the above-mentioned prior art, as shown in FIG. 10, the ridge line portion 300 of the glass substrate 1 is locally heated and melted by the laser beam 2 and then naturally cooled to enlarge an enlarged view ( Since it is solidified into an R shape like the ridgeline portion 301 shown in FIG. 12), the solidified R-shaped ridgeline portion 301 reaches the polishing plane 302 of the glass substrate 1 and impairs the flatness of the glass substrate 1. There were problems such as. Particularly, in the glass substrate for liquid crystal panel, if the flatness cannot be maintained, the connection with the electrode pattern 103 becomes poor when the TAB tape 90 is mounted on the electrode pattern 103 formed on the substrate shown in FIG. Or, the product quality was significantly deteriorated, such as poor adhesion.
【０００６】また、図１０において、ガラス基板１を適
当な余熱なしにレーザ光で局所的な加熱をすると、局所
的熱膨張に伴う熱応力により割れが発生し、良好な面取
り加工ができなかった。これらの損傷を避けるために、
ガラス基板１全体を、常温から軟化点より低い所定温度
まで徐々に加熱して所定温度に保持した後、レーザ光に
よる上記面取り加工を行い、さらに所定温度から常温ま
で徐々に冷却する方法（特開平２−２４１６８４号公
報）が提案されていた。しかしこの方法では、常温から
の加熱・冷却に時間がかかり生産性を著しく阻害してい
た。Further, in FIG. 10, when the glass substrate 1 is locally heated by laser light without appropriate residual heat, cracking occurs due to thermal stress due to local thermal expansion, and good chamfering cannot be performed. . To avoid these damages,
A method in which the entire glass substrate 1 is gradually heated from room temperature to a predetermined temperature lower than the softening point and maintained at the predetermined temperature, then the above chamfering process is performed by laser light, and then the glass substrate 1 is gradually cooled from the predetermined temperature to room temperature. No. 2-241684) was proposed. However, with this method, it takes time to heat and cool from room temperature, and productivity is significantly impaired.
【０００７】また、面取り加工をする箇所を稜線部に限
定する方法として、レーザ光をガラス基板の透過または
反射する波長帯域とし、レーザ光を吸収するレーザ光吸
収材（黒色ペイント等）を図１０に示すガラス基板１の
加工を必要とする稜線部３００へ塗布することで加熱箇
所を限定し必要な加熱を行う方法（特開平２−４８４２
３号公報）が提案されているが、そのためにはレーザ光
吸収材の塗布工程を必要とし、また、レーザ照射後に残
った前記吸収材を洗浄除去しなくてはならないなどの課
題があった。As a method of limiting the chamfered portion to the ridge portion, a laser light absorbing material (black paint or the like) that absorbs the laser light is used as a wavelength band in which the laser light is transmitted or reflected by the glass substrate. A method of applying necessary heating to the ridge line portion 300 that requires processing of the glass substrate 1 shown in FIG.
No. 3) has been proposed, but for that purpose, there is a problem that a step of applying a laser light absorbing material is required, and the absorbing material remaining after laser irradiation must be washed and removed.
【０００８】そこで本発明は、切断または割断されたガ
ラス基板及び液晶パネル用ガラス基板の稜線部を、ガラ
ス基板及び液晶パネル用ガラス基板の精度を損なうこと
なく、高い生産性と洗浄工程を必要としないクリーンな
加工を可能にする面取り方法の提供を目的とする。Therefore, the present invention requires high productivity and a cleaning process for the ridges of the cut or cleaved glass substrate and liquid crystal panel glass substrate without impairing the accuracy of the glass substrate and liquid crystal panel glass substrate. The purpose is to provide a chamfering method that enables clean processing.
【０００９】[0009]
【課題を解決するための手段】本発明は、上記した目的
を達成するために、ガラス基板の稜線部付近にレーザ光
を照射し加熱することでガラス基板にクラックを発生さ
せ、相対的にレーザ光を稜線方向に走査し、クラックを
稜線部に沿って成長させることにより、ガラス基板から
稜線部を分離させることを特徴とする。また、ひとつの
レーザ光を間隔を保って並べた複数のガラス基板の稜線
部付近に照射し、複数のガラス基板の面取り加工を同時
に行うことを特徴とする。さらには、上記方法を用いて
液晶パネル用ガラス基板の面取り加工を行うことを特徴
とする。さらに、その液晶パネル用ガラス基板を用いた
液晶パネルとしたことを特徴とする。In order to achieve the above object, the present invention irradiates a laser beam in the vicinity of a ridgeline portion of a glass substrate and heats the glass substrate to generate a crack in the glass substrate, so that a relative laser beam is generated. It is characterized in that the ridge portion is separated from the glass substrate by scanning light in the ridge direction and growing cracks along the ridge portion. In addition, one laser beam is irradiated to the vicinity of a ridgeline portion of a plurality of glass substrates which are arranged at intervals so that the plurality of glass substrates are chamfered at the same time. Furthermore, the glass substrate for a liquid crystal panel is chamfered by using the above method. Further, a liquid crystal panel using the glass substrate for a liquid crystal panel is characterized.
【００１０】[0010]
【作用】本発明は、ガラス基板の稜線部付近へ局所的に
レーザ光を照射して加熱し、ガラス基板の局所的熱膨張
に伴う熱応力でクラックを発生させる。このクラックの
大きさは、レーザ光による入熱条件で決定される。この
レーザ光もしくはガラス基板を相対的に稜線方向に走査
すると、発生したクラックはその稜線方向に沿ってつな
がりながら成長し、稜線部はガラス基板から分離され
る。この稜線部がガラス基板から分離することで、ガラ
ス基板に面取り面が形成される。上記方法によると、ガ
ラス基板の精度を損なうことなく高い生産性と洗浄工程
を必要としない面取り加工を施すことが可能となる。According to the present invention, the vicinity of the ridge of the glass substrate is locally irradiated with laser light to heat the glass substrate, and cracks are generated by the thermal stress caused by the local thermal expansion of the glass substrate. The size of this crack is determined by the heat input conditions of the laser light. When the laser beam or the glass substrate is relatively scanned in the ridge direction, the generated cracks grow while connecting along the ridge direction, and the ridge portion is separated from the glass substrate. The chamfered surface is formed on the glass substrate by separating the ridge line portion from the glass substrate. According to the above method, it is possible to perform chamfering processing that does not require a high productivity and cleaning step without impairing the accuracy of the glass substrate.
【００１１】[0011]
【発明の実施の形態】以下に本発明の好適な例を図面を
用いて詳細に説明する。Preferred embodiments of the present invention will be described in detail below with reference to the drawings.
【００１２】図１は、本発明の一例による面取り方法を
示す正面図、図２は平面図である。ガラス基板１に照射
するレーザ光２には、ガラス材に吸収される波長帯域を
もつレーザを用いる。本例では、シングルモード、パル
ス発振の炭酸ガスレーザを使用した。図１に示すよう
に、レーザ光２を集光レンズ５で集光し、集光されたレ
ーザ光の焦点位置３を外した位置で焦点位置３のビーム
径よりも大きなビーム径をもつレーザ光４としてガラス
基板１の稜線部付近へ局所的に照射する。レーザ光４の
照射による加熱で、ガラス基板１へ局所的熱膨張にとも
なう熱応力によるクラック１１を発生させる。さらに、
図２に示すように相対的にレーザ光４を稜線方向に走査
する。本例では、便宜上レーザ光４が移動するものとし
て以下の説明を行う。レーザ光４を稜線方向に走査する
ことで、ガラス基板１に順次発生したクラック１１を稜
線部に沿って成長させることができる。クラック１１の
成長する状態を平面図（図３）および上面図（図４）を
用いて説明する。レーザ光４が稜線方向に走査された場
合、クラック１１の成長により図４に示すようにガラス
基板１から稜線部１０がつながったままの状態で分離し
ていく。これにより、図３に示すような稜線部１０の分
離によるクラック面１２ができ面取りが形成される。こ
のとき、図１に示されるようなガラス基板１の稜線部に
発生するクラック１１の大きさはレーザ光２の平均出力
・パルスデューティー比・繰り返し周波数・焦点距離・
照射位置・および移動速度等の条件を面取り大きさに応
じて設定することで調整することができる。これによ
り、図３に示すような目的の大きさのクラック面１２を
得ることが可能となる。FIG. 1 is a front view showing a chamfering method according to an example of the present invention, and FIG. 2 is a plan view. As the laser light 2 with which the glass substrate 1 is irradiated, a laser having a wavelength band absorbed by the glass material is used. In this example, a single mode, pulsed carbon dioxide laser was used. As shown in FIG. 1, a laser beam 2 is condensed by a condenser lens 5, and a laser beam having a beam diameter larger than the beam diameter of the focal point 3 at a position where the focal point 3 of the condensed laser beam is removed. As No. 4, the vicinity of the ridge of the glass substrate 1 is locally irradiated. The heating by irradiation with the laser light 4 causes cracks 11 to be generated in the glass substrate 1 due to thermal stress associated with local thermal expansion. further,
As shown in FIG. 2, the laser light 4 is relatively scanned in the ridge direction. In this example, the following description will be made assuming that the laser light 4 moves for convenience. By scanning the laser beam 4 in the ridge direction, the cracks 11 sequentially generated in the glass substrate 1 can be grown along the ridge portion. The state in which the crack 11 grows will be described with reference to a plan view (FIG. 3) and a top view (FIG. 4). When the laser beam 4 is scanned in the ridge direction, the cracks 11 grow to separate the glass substrate 1 from the glass substrate 1 while the ridge portion 10 remains connected. As a result, the crack surface 12 is formed by the separation of the ridge line portion 10 as shown in FIG. 3, and the chamfer is formed. At this time, the size of the crack 11 generated on the ridge of the glass substrate 1 as shown in FIG. 1 is determined by the average output of the laser beam 2, the pulse duty ratio, the repetition frequency, the focal length,
It is possible to adjust by setting conditions such as irradiation position and moving speed according to the chamfer size. This makes it possible to obtain the crack surface 12 having a target size as shown in FIG.
【００１３】（実施例）実際の加工では、レーザ光の平
均出力を６０Ｗ、パルスデューティー比５０％、繰り返
し周波数５００Ｈｚ、さらに焦点距離を図１のレーザ光
焦点位置３から１３．０ｍｍ離してレーザ光４とし、レ
ーザ光４中心をガラス基板１稜線部１０から４００μｍ
程度離した位置で照射しながら５０ｍｍ／ｓの速度で走
査した。その結果、ガラス基板１の割断端面から０．２
５ｍｍ程度の大きさをもつクラック面１２をレーザ光４
を走査したガラス基板１の稜線部に形成することができ
た。なお、集光レンズ５には焦点距離１．５インチのレ
ンズを使用した。さらに、上記加工条件においてレーザ
光４の中心をガラス基板稜線部から３４０μｍ離した位
置で上記加工を行ったところ割断端面から０．３４ｍｍ
程度の大きさをもつクラック面１２を得ることができ、
レーザ光照射位置により面取りの大きさを設定できた。
また、レーザ光４の移動速度は、その加工原理が局所的
熱膨張に伴う熱応力によるクラックの発生とその成長を
利用しながら行うため高速化が可能であり、実際の加工
ではレーザ光の平均出力を６０Ｗ、パルスデューティー
比５０％、繰り返し周波数１ｋＨｚ、さらに、焦点距離
を図１のレーザ光焦点位置３から１３．０ｍｍ離してレ
ーザ光４とし、レーザ光４中心をガラス基板稜線部１０
から３００μｍ離した位置で照射しながら１００ｍｍ／
ｓの速度で走査した結果、０．３２ｍｍ程度のクラック
面１２を得ることができた。(Embodiment) In actual processing, the average output of laser light is 60 W, the pulse duty ratio is 50%, the repetition frequency is 500 Hz, and the focal length is 13.0 mm away from the laser light focal position 3 in FIG. 4 and the center of the laser beam 4 is 400 μm from the ridge line portion 10 of the glass substrate 1.
Scanning was performed at a speed of 50 mm / s while irradiating at positions apart from each other. As a result, 0.2 from the cleaved end face of the glass substrate 1.
The crack surface 12 having a size of about 5 mm is irradiated with laser light 4
Could be formed on the ridge portion of the glass substrate 1 scanned. A lens having a focal length of 1.5 inches was used as the condenser lens 5. Furthermore, under the above processing conditions, the above processing was performed at a position where the center of the laser beam 4 was 340 μm away from the ridge line portion of the glass substrate.
It is possible to obtain a crack surface 12 having a size of about
The size of the chamfer could be set according to the laser light irradiation position.
Further, the moving speed of the laser light 4 can be increased because the processing principle is performed while utilizing the generation and growth of cracks due to thermal stress due to local thermal expansion. The output is 60 W, the pulse duty ratio is 50%, the repetition frequency is 1 kHz, and the focal length is 13.0 mm away from the laser beam focus position 3 in FIG. 1 to be laser beam 4, and the center of the laser beam 4 is the glass substrate ridge line portion 10.
While irradiating at a position 300 μm away from 100 mm /
As a result of scanning at a speed of s, a crack surface 12 of about 0.32 mm could be obtained.
【００１４】以上記してきた加工方法では、面取りがク
ラックの成長によるクラック面で形成されるため、ガラ
ス基板研磨平面の平坦度が維持され、かつ切断および割
断されたガラス基板の稜線部に発生するチッピングおよ
びマイクロクラックを防止する面取り加工ができる。特
に、図７に示す液晶パネル用ガラス基板においては、ガ
ラス基板研磨平面の平坦度が維持されることで、実装時
のＴＡＢテープ９０と電極パターン１０３との接続不良
や密着性を損なうことなく、かつＴＡＢテープ９０を稜
線部付近で折り曲げることにより発生するＴＡＢテープ
９０の回路パターン９１の断線を防止する面取りが得ら
れる。また、上記加工方法は常温での加工が可能であ
り、ガラス基板全体を加熱および除冷する時間が必要な
いため高い生産性を得ることができる。さらに、レーザ
光の照射位置によりガラス基板の稜線部を必要な大きさ
に分離除去できることから、ガラス基板に対しレーザ光
吸収材を塗布することで加熱箇所を限定する方法を用い
なくても面取り加工が可能となり、レーザ光吸収材の塗
布工程や加工後の洗浄工程を必要としない生産性のよい
低コストな面取り加工が可能となる。In the processing method described above, since the chamfer is formed on the crack surface due to the growth of cracks, the flatness of the polished surface of the glass substrate is maintained, and the ridge line portion of the cut and cleaved glass substrate occurs. Can be chamfered to prevent chipping and microcracks. Particularly, in the glass substrate for liquid crystal panel shown in FIG. 7, by maintaining the flatness of the polished surface of the glass substrate, the connection failure or the adhesion between the TAB tape 90 and the electrode pattern 103 during mounting can be prevented, Further, it is possible to obtain a chamfer that prevents the disconnection of the circuit pattern 91 of the TAB tape 90 caused by bending the TAB tape 90 near the ridge portion. In addition, the above-described processing method can be processed at room temperature, and high productivity can be obtained because time for heating and cooling the entire glass substrate is not required. Furthermore, since the ridgeline part of the glass substrate can be separated and removed to the required size depending on the irradiation position of the laser beam, chamfering processing is possible without applying the method of limiting the heating point by applying the laser light absorbing material to the glass substrate. Therefore, it is possible to perform chamfering processing with good productivity and at low cost, which does not require a laser light absorbing material coating step or a cleaning step after processing.
【００１５】また、上記加工方法を用いて、より効率的
で生産性の高い加工方法を図５（正面図）および図６
（拡大平面図）に示す図面により説明する。図５におい
て、レーザ光２を集光レンズ５で集光し、集光されたレ
ーザ光の焦点位置３を外した位置で焦点位置３のビーム
径よりも大きなビーム径をもつレーザ光４として、間隔
を保って並べた複数のガラス基板１ａと１ｂの稜線部付
近に照射する。ガラス基板１ａと１ｂはレーザ光４のビ
ーム中心から振り分けられた位置に並べられ、互いに焦
点位置３から同じ距離になるよう位置を維持する。前記
加工位置条件を調整することにより、レーザ光４の照射
による加工条件を共有することが可能となり、それぞれ
のガラス基板に局所的熱膨張にともなう熱応力によるク
ラック１１を稜線部に発生させることができる。しか
し、現実には集光レンズ５とレーザ光２との位置や傾
き、レーザ光２のビーム形状および集光レンズ５の収差
等によりレーザ光４の位置でのレーザ照射条件がガラス
基板１ａおよび１ｂでは同じにならない。そのため、必
要に応じてそれぞれのガラス基板の位置を調整し、最適
な位置を維持する。さらに、図６のようにレーザ光４を
間隔を保って並べられた複数のガラス基板１ａおよび１
ｂの稜線に沿って走査することで、上記加工方法に基づ
く面取り加工をガラス基板１ａおよび１ｂに対し同時に
行うことが可能となる。この加工方法により、レーザの
出力を効率よく利用し、しかも高い生産性で面取り加工
を実現することができる。またこの加工方法は、液晶パ
ネル用ガラス基板への応用も可能である。さらに、この
液晶パネル用ガラス基板を張り合わせて液晶表示用等の
液晶パネルを得ることができるものである。Further, a more efficient and highly productive processing method using the above processing method will be described with reference to FIG. 5 (front view) and FIG.
This will be described with reference to the drawings shown in (enlarged plan view). In FIG. 5, a laser beam 2 is condensed by a condenser lens 5, and a laser beam 4 having a beam diameter larger than the beam diameter of the focal point 3 at a position where the focal point 3 of the condensed laser beam is removed, Irradiation is performed in the vicinity of the ridges of the plurality of glass substrates 1a and 1b which are arranged at intervals. The glass substrates 1a and 1b are arranged at positions separated from the beam center of the laser light 4, and are maintained at the same distance from the focal position 3. By adjusting the processing position condition, it becomes possible to share the processing condition by the irradiation of the laser beam 4, and the crack 11 due to the thermal stress due to the local thermal expansion in each glass substrate can be generated at the ridge portion. it can. However, in reality, the laser irradiation conditions at the position of the laser light 4 depend on the position and inclination between the condenser lens 5 and the laser light 2, the beam shape of the laser light 2, the aberration of the condenser lens 5, and the like, and the glass substrates 1a and 1b. Then it won't be the same. Therefore, the position of each glass substrate is adjusted as needed to maintain the optimum position. Further, as shown in FIG. 6, a plurality of glass substrates 1a and 1 are arranged with laser light 4 arranged at intervals.
By scanning along the ridgeline of b, the chamfering process based on the above-described processing method can be simultaneously performed on the glass substrates 1a and 1b. By this processing method, the output of the laser can be efficiently used and the chamfering processing can be realized with high productivity. Further, this processing method can be applied to a glass substrate for a liquid crystal panel. Further, this glass substrate for liquid crystal panel can be bonded to obtain a liquid crystal panel for liquid crystal display or the like.
【００１６】なお、本例ではパルス発振の炭酸ガスレー
ザを使用したが、連続発振の炭酸ガスレーザにおいても
同様な加工ができることはいうまでもない。また、ガラ
ス基板の配置およびレーザ光の照射方向は、加工する環
境および条件により設定されるが、レーザは安全のため
上方から下方に照射することが望ましい。Although a pulsed carbon dioxide gas laser is used in this example, it goes without saying that the same processing can be performed with a continuous wave carbon dioxide gas laser. Further, the arrangement of the glass substrate and the irradiation direction of the laser light are set depending on the processing environment and conditions, but it is desirable to irradiate the laser from above to below for safety.
【００１７】[0017]
【発明の効果】以上記したように本発明によれば、レー
ザ光をガラス基板の稜線部付近に照射した際に発生する
クラックと、そのクラックの成長によるクラック面で面
取りを形成するため、ガラス基板研磨平面の平坦度を損
なうことなく、かつ切断および割断されたガラス基板の
稜線部に発生するチッピングおよびマイクロクラックを
防止する面取り加工ができる。特に、液晶パネル用ガラ
ス基板においてはガラス基板研磨平面の平坦度が維持さ
れることで、実装時のＴＡＢテープと電極パターンとの
接続不良や密着性を損なうことなく、かつＴＡＢテープ
を稜線部付近で折り曲げることにより発生するＴＡＢテ
ープの回路パターンの断線を防止する面取りが得られ
る。また、本発明の加工方法は常温での面取り加工が可
能であり、ガラス基板全体を加熱および除冷する必要が
ないため、高い生産性を得ることができる。また、本発
明の加工方法はレーザ光の照射位置によりガラス基板の
稜線部を必要な大きさに分離除去できることから、ガラ
ス基板に対しレーザ光吸収材を塗布することで加熱箇所
を限定する方法を用いなくても面取り加工が可能とな
り、レーザ光吸収材の塗布工程や加工後に残ったレーザ
光吸収材を除去するための洗浄工程を必要としないこと
から、生産性がよく低コストでクリーンな加工ができ、
さらにひとつのレーザ光を用いて複数のガラス基板の面
取り加工を行うことで、生産性を向上させ効率のよい加
工方法を提供することができる。As described above, according to the present invention, a chamfer is formed by a crack generated when a laser beam is irradiated in the vicinity of a ridge of a glass substrate and a chamfer is formed by the growth of the crack. Chamfering can be performed without impairing the flatness of the polished surface of the substrate and preventing chipping and microcracks that occur at the ridges of the cut and cleaved glass substrate. In particular, in the glass substrate for liquid crystal panel, the flatness of the polished surface of the glass substrate is maintained, so that the TAB tape is not damaged in the connection or the adhesiveness at the time of mounting, and the TAB tape is kept in the vicinity of the ridge. It is possible to obtain a chamfer that prevents the disconnection of the circuit pattern of the TAB tape caused by bending at. In addition, the processing method of the present invention enables chamfering at room temperature and does not require heating and cooling of the entire glass substrate, so high productivity can be obtained. Further, since the processing method of the present invention can separate and remove the ridge line portion of the glass substrate into a required size by the irradiation position of the laser light, a method for limiting the heating location by applying the laser light absorbing material to the glass substrate is provided. Chamfering is possible without using it, and because it does not require a laser light absorbing material coating step or a cleaning step to remove the laser light absorbing material remaining after processing, it is highly productive, low cost and clean processing. Can
Further, by chamfering a plurality of glass substrates using one laser beam, it is possible to improve productivity and provide an efficient processing method.
【図１】本発明の一例の面取り方法を示す正面図であ
る。FIG. 1 is a front view showing a chamfering method according to an example of the present invention.
【図２】本発明の一例の面取り方法を示す平面図であ
る。FIG. 2 is a plan view showing a chamfering method according to an example of the present invention.
【図３】本発明の一例の面取り加工状態を示した側面図
である。FIG. 3 is a side view showing a chamfered state of an example of the present invention.
【図４】本発明の一例の面取り加工状態を示した平面図
である。FIG. 4 is a plan view showing a chamfered state of an example of the present invention.
【図５】本発明の一例の面取り加工応用例を示す正面図
である。FIG. 5 is a front view showing a chamfering application example of the present invention.
【図６】本発明の一例の面取り加工応用例を示す平面図
である。FIG. 6 is a plan view showing a chamfering application example of the present invention.
【図７】本発明の一例の液晶パネル用ガラス基板への面
取り加工応用例とパネル実装を示した斜視図である。FIG. 7 is a perspective view showing an example of application of chamfering to a glass substrate for a liquid crystal panel and panel mounting according to an example of the present invention.
【図８】液晶パネル用ガラス基板と液晶パネル実装を示
した斜視図である。FIG. 8 is a perspective view showing a glass substrate for a liquid crystal panel and mounting of the liquid crystal panel.
【図９】従来の研削による面取り加工方法を示した正面
図である。FIG. 9 is a front view showing a conventional chamfering method by grinding.
【図１０】従来のレーザを使用した面取り加工方法を示
した正面図である。FIG. 10 is a front view showing a conventional chamfering method using a laser.
【図１１】被加工物であるガラス基板を示した斜視図で
ある。FIG. 11 is a perspective view showing a glass substrate which is a workpiece.
【図１２】従来のレーザを使用した面取り加工方法によ
り加工された面取り部側面の拡大図である。FIG. 12 is an enlarged view of a side surface of a chamfered portion processed by a conventional chamfering method using a laser.
１ ガラス基板 １ａ ガラス基板 １ｂ ガラス基板 ２，４ レーザ光 ３ レーザ光の焦点 ５ 集光レンズ １０ 分離した稜線部 １１ クラック １２ クラック面 ９０ ＴＡＢテープ ９１ 回路パターン １００ 液晶パネル １０１ 割断端面 １０２ 液晶パネル用ガラス基板稜線部 １０３ 電極パターン ２０１ 面取り ２０２ 回転軸 ２０３ 研削砥石 ２０４ 回転軸の回転方向 ３００ ガラス基板稜線部 ３０１ Ｒ形状に固化したガラス基板稜線部 ３０２ 面取り 1 Glass Substrate 1a Glass Substrate 1b Glass Substrate 2,4 Laser Light 3 Laser Light Focus 5 Condenser Lens 10 Separated Ridge Line Part 11 Crack 12 Crack Surface 90 TAB Tape 91 Circuit Pattern 100 Liquid Crystal Panel 101 Cleaved End Surface 102 Liquid Crystal Panel Glass Substrate ridge line 103 Electrode pattern 201 Chamfer 202 Rotation axis 203 Grinding stone 204 Rotation direction of rotation axis 300 Glass substrate ridge line section 301 Glass substrate ridge line section 302 solidified in R shape 302 Chamfer
Claims (4)
射して加熱することで、ガラス基板にクラックを発生さ
せ、レーザ光を相対的に稜線方向に走査し、クラックを
稜線部に沿って成長させて、ガラス基板から稜線部を分
離することを特徴とするガラス基板面取り方法。1. A crack is generated in a glass substrate by irradiating and heating a laser beam in the vicinity of the ridgeline portion of the glass substrate, and the laser light is relatively scanned in the ridgeline direction, so that the crack is formed along the ridgeline portion. A method for chamfering a glass substrate, which comprises growing and separating a ridge from a glass substrate.
た複数のガラス基板の稜線部付近に照射し、並べられた
複数のガラス基板の面取り加工を同時に行うことを特徴
とする請求項１記載のガラス基板面取り方法。2. A laser beam is radiated to the vicinity of a ridge of a plurality of glass substrates arranged at intervals to chamfer the plurality of glass substrates arranged at the same time. The glass substrate chamfering method described.
ス基板面取り方法を用いて面取り加工を行ったことを特
徴とする液晶パネル用ガラス基板。3. A glass substrate for a liquid crystal panel, which is chamfered by using the glass substrate chamfering method according to claim 1 or 2.
ラス基板を用いた液晶パネル。4. A liquid crystal panel using the glass substrate for a liquid crystal panel obtained according to claim 3.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8035245A JPH09225665A (en) | 1996-02-22 | 1996-02-22 | Method for chamfering glass substrate, glass substrate for liquid crystal panel using the method and liquid crystal panel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP8035245A JPH09225665A (en) | 1996-02-22 | 1996-02-22 | Method for chamfering glass substrate, glass substrate for liquid crystal panel using the method and liquid crystal panel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| JPH09225665A true JPH09225665A (en) | 1997-09-02 |
Family
ID=12436462
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP8035245A Pending JPH09225665A (en) | 1996-02-22 | 1996-02-22 | Method for chamfering glass substrate, glass substrate for liquid crystal panel using the method and liquid crystal panel |
Country Status (1)
| Country | Link |
|---|---|
| JP (1) | JPH09225665A (en) |
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