WO2009148779A3 - Oxydes métalliques fortement dopés et leurs procédés de fabrication - Google Patents

Oxydes métalliques fortement dopés et leurs procédés de fabrication Download PDF

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Publication number
WO2009148779A3
WO2009148779A3 PCT/US2009/043689 US2009043689W WO2009148779A3 WO 2009148779 A3 WO2009148779 A3 WO 2009148779A3 US 2009043689 W US2009043689 W US 2009043689W WO 2009148779 A3 WO2009148779 A3 WO 2009148779A3
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WO
WIPO (PCT)
Prior art keywords
doped metal
doped
making
metal oxide
methods
Prior art date
Application number
PCT/US2009/043689
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English (en)
Other versions
WO2009148779A2 (fr
Inventor
Qi Li
Jian-Ku Shang
Original Assignee
The Board Of Trustees Of The University Of Illinois
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by The Board Of Trustees Of The University Of Illinois filed Critical The Board Of Trustees Of The University Of Illinois
Priority to US12/994,437 priority Critical patent/US9120088B2/en
Publication of WO2009148779A2 publication Critical patent/WO2009148779A2/fr
Publication of WO2009148779A3 publication Critical patent/WO2009148779A3/fr

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Classifications

    • B01J35/39
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J21/00Catalysts comprising the elements, oxides, or hydroxides of magnesium, boron, aluminium, carbon, silicon, titanium, zirconium, or hafnium
    • B01J21/06Silicon, titanium, zirconium or hafnium; Oxides or hydroxides thereof
    • B01J21/063Titanium; Oxides or hydroxides thereof
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J27/00Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
    • B01J27/24Nitrogen compounds
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/02Impregnation, coating or precipitation
    • B01J37/0215Coating
    • B01J37/0225Coating of metal substrates
    • B01J37/0226Oxidation of the substrate, e.g. anodisation
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/08Heat treatment
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B01PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
    • B01JCHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
    • B01J37/00Processes, in general, for preparing catalysts; Processes, in general, for activation of catalysts
    • B01J37/34Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation
    • B01J37/341Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation making use of electric or magnetic fields, wave energy or particle radiation
    • B01J37/344Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation making use of electric or magnetic fields, wave energy or particle radiation of electromagnetic wave energy
    • B01J37/346Irradiation by, or application of, electric, magnetic or wave energy, e.g. ultrasonic waves ; Ionic sputtering; Flame or plasma spraying; Particle radiation making use of electric or magnetic fields, wave energy or particle radiation of electromagnetic wave energy of microwave energy
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01GCOMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G23/00Compounds of titanium
    • C01G23/04Oxides; Hydroxides
    • C01G23/047Titanium dioxide
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/50Solid solutions
    • C01P2002/52Solid solutions containing elements as dopants
    • CCHEMISTRY; METALLURGY
    • C01INORGANIC CHEMISTRY
    • C01PINDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2002/00Crystal-structural characteristics
    • C01P2002/70Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data
    • C01P2002/72Crystal-structural characteristics defined by measured X-ray, neutron or electron diffraction data by d-values or two theta-values, e.g. as X-ray diagram

Abstract

L'invention porte sur un procédé de fabrication d'un oxyde métallique dopé, qui comprend le chauffage d'un premier oxyde métallique dopé par un recuit thermique rapide, pour former un deuxième oxyde métallique dopé. La structure cristalline du deuxième oxyde métallique dopé est différente de la structure cristalline du premier oxyde métallique dopé. Le procédé peut produire un oxyde de titane dopé, dans lequel le rapport atomique du non métal dopant au titane est de 2 % à 20 %, et une quantité d'au moins 10 % de l'oxyde de titane dopé se présente dans la phase rutile. Le procédé peut aussi produire un oxyde d'étain dopé, dans lequel le rapport atomique de non métal dopant à l'étain est de 2 % à 20 %, et une quantité d'au moins 50 % de l'oxyde d'étain dopé se présente dans la phase rutile.
PCT/US2009/043689 2008-05-29 2009-05-13 Oxydes métalliques fortement dopés et leurs procédés de fabrication WO2009148779A2 (fr)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/994,437 US9120088B2 (en) 2008-05-29 2009-05-13 Heavily doped metal oxides and methods for making the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US5705008P 2008-05-29 2008-05-29
US61/057,050 2008-05-29

Publications (2)

Publication Number Publication Date
WO2009148779A2 WO2009148779A2 (fr) 2009-12-10
WO2009148779A3 true WO2009148779A3 (fr) 2010-05-27

Family

ID=41112502

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2009/043689 WO2009148779A2 (fr) 2008-05-29 2009-05-13 Oxydes métalliques fortement dopés et leurs procédés de fabrication

Country Status (2)

Country Link
US (1) US9120088B2 (fr)
WO (1) WO2009148779A2 (fr)

Families Citing this family (9)

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WO2009148779A2 (fr) 2008-05-29 2009-12-10 The Board Of Trustees Of The University Of Illinois Oxydes métalliques fortement dopés et leurs procédés de fabrication
US9278337B2 (en) * 2011-05-19 2016-03-08 Nanoptek Corporation Visible light titania photocatalyst, method for making same, and processes for use thereof
CN102515566B (zh) * 2011-11-07 2013-10-30 中山市格兰特实业有限公司火炬分公司 一种具有可见光响应的磁控溅射自清洁玻璃的制备方法
CN102644055A (zh) * 2012-04-05 2012-08-22 东南大学 一种氮掺杂二氧化锡薄膜的制备方法
CN105568229B (zh) * 2016-03-09 2018-10-30 无锡南理工科技发展有限公司 一种掺氮二氧化钛薄膜的制备方法
CN105944745B (zh) * 2016-05-13 2018-09-14 河海大学 一种二氧化钛纳米微球及其制备方法和应用
KR101968403B1 (ko) * 2016-05-31 2019-04-11 한양대학교 에리카산학협력단 열처리 방법, 및 질소 도핑된 금속 산화물 구조체
US10910679B2 (en) * 2016-07-19 2021-02-02 Uchicago Argonne, Llc Photo-assisted fast charging of lithium manganese oxide spinel (LiMn2O4) in lithium-ion batteries
CN108435125A (zh) * 2018-05-17 2018-08-24 沈阳理工大学 一种自清洁陶瓷纤维绳的制备方法

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Also Published As

Publication number Publication date
US20110301018A1 (en) 2011-12-08
WO2009148779A2 (fr) 2009-12-10
US9120088B2 (en) 2015-09-01

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