WO2009128622A3 - 비대칭적 단위 유닛으로 구성된 클래드층을 이용한 발광소자 - Google Patents

비대칭적 단위 유닛으로 구성된 클래드층을 이용한 발광소자 Download PDF

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Publication number
WO2009128622A3
WO2009128622A3 PCT/KR2009/001844 KR2009001844W WO2009128622A3 WO 2009128622 A3 WO2009128622 A3 WO 2009128622A3 KR 2009001844 W KR2009001844 W KR 2009001844W WO 2009128622 A3 WO2009128622 A3 WO 2009128622A3
Authority
WO
WIPO (PCT)
Prior art keywords
clad layer
light
emitting device
units
layer consisting
Prior art date
Application number
PCT/KR2009/001844
Other languages
English (en)
French (fr)
Other versions
WO2009128622A2 (ko
Inventor
오재응
노영균
구분회
Original Assignee
우리엘에스티 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 우리엘에스티 주식회사 filed Critical 우리엘에스티 주식회사
Publication of WO2009128622A2 publication Critical patent/WO2009128622A2/ko
Publication of WO2009128622A3 publication Critical patent/WO2009128622A3/ko
Priority to US12/904,342 priority Critical patent/US8294164B2/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
    • H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Led Devices (AREA)

Abstract

본 발명은 활성층의 상부 및 하부에 비대칭적 에너지밴드갭을 갖는 유니트를 반복적으로 쌓음으로서 클래드층을 구비하고, 이를 통하여 전자와 정공의 활성층으로의 유입을 임의로 조절함으로서 내부양자효율을 개선할 수 있는 비대칭적 단위 유닛으로 구성된 클래드층을 이용한 발광소자에 관한 것으로서, 본 발명에 따른 비대칭적 단위 유닛으로 구성된 클래드층을 이용한 발광소자는 활성층의 상부 또는 하부 중 어느 한 곳 이상에 클래드층이 구비되며, 상기 클래드층은 하나 또는 복수의 단위 유닛으로 구성되고, 상기 단위 유닛은 서로 다른 에너지 밴드갭을 갖는 제 1, 제 2, …, 제 n 유닛층(n은 3이상의 자연수)이 순차적으로 적층된 구조를 이루며, 상기 단위 유닛의 에너지밴드 다이어그램은 비대칭적 형태를 갖는 것을 특징으로 한다.
PCT/KR2009/001844 2008-04-15 2009-04-10 비대칭적 단위 유닛으로 구성된 클래드층을 이용한 발광소자 WO2009128622A2 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/904,342 US8294164B2 (en) 2008-04-15 2010-10-14 Light-emitting device using clad layer consisting of asymmetrical units

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080034742A KR101000279B1 (ko) 2008-04-15 2008-04-15 비대칭적 단위 유닛으로 구성된 클래드층을 이용한발광소자
KR10-2008-0034742 2008-04-15

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/904,342 Continuation US8294164B2 (en) 2008-04-15 2010-10-14 Light-emitting device using clad layer consisting of asymmetrical units

Publications (2)

Publication Number Publication Date
WO2009128622A2 WO2009128622A2 (ko) 2009-10-22
WO2009128622A3 true WO2009128622A3 (ko) 2010-01-14

Family

ID=41199553

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/001844 WO2009128622A2 (ko) 2008-04-15 2009-04-10 비대칭적 단위 유닛으로 구성된 클래드층을 이용한 발광소자

Country Status (3)

Country Link
US (1) US8294164B2 (ko)
KR (1) KR101000279B1 (ko)
WO (1) WO2009128622A2 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2408028B1 (en) * 2010-07-16 2015-04-08 LG Innotek Co., Ltd. Light emitting device
US8426844B2 (en) 2010-08-04 2013-04-23 Lg Innotek Co., Ltd. Light emitting device, light emitting device package, and display device therewith
KR101781435B1 (ko) * 2011-04-13 2017-09-25 삼성전자주식회사 질화물 반도체 발광소자
KR101954205B1 (ko) * 2013-02-04 2019-05-31 엘지이노텍 주식회사 발광 소자
DE112016004375T5 (de) 2015-09-28 2018-06-21 Nichia Corporation Lichtemittierendes nitrid-halbleiter-element
DE102016111929A1 (de) * 2016-06-29 2018-01-04 Osram Opto Semiconductors Gmbh Optoelektronischer Halbleiterkörper und Leuchtdiode
JP7338166B2 (ja) 2019-02-25 2023-09-05 日本電信電話株式会社 半導体装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070063207A1 (en) * 1998-03-12 2007-03-22 Koji Tanizawa Nitride semiconductor device
KR100714553B1 (ko) * 2005-12-06 2007-05-07 삼성전기주식회사 질화물 반도체 발광소자
KR100755587B1 (ko) * 2006-07-12 2007-09-06 삼성전기주식회사 질화물 반도체 발광 소자
KR20070098031A (ko) * 2006-03-30 2007-10-05 삼성전기주식회사 질화물 반도체 소자

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4047150B2 (ja) 2002-11-28 2008-02-13 ローム株式会社 半導体発光素子
KR100558455B1 (ko) * 2004-06-25 2006-03-10 삼성전기주식회사 질화물 반도체 소자
KR100716792B1 (ko) 2005-07-20 2007-05-14 삼성전기주식회사 질화물 반도체 소자
KR100835116B1 (ko) 2007-04-16 2008-06-05 삼성전기주식회사 질화물 반도체 발광 소자

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20070063207A1 (en) * 1998-03-12 2007-03-22 Koji Tanizawa Nitride semiconductor device
KR100714553B1 (ko) * 2005-12-06 2007-05-07 삼성전기주식회사 질화물 반도체 발광소자
KR20070098031A (ko) * 2006-03-30 2007-10-05 삼성전기주식회사 질화물 반도체 소자
KR100755587B1 (ko) * 2006-07-12 2007-09-06 삼성전기주식회사 질화물 반도체 발광 소자

Also Published As

Publication number Publication date
US20110084249A1 (en) 2011-04-14
KR20090109340A (ko) 2009-10-20
KR101000279B1 (ko) 2010-12-10
US8294164B2 (en) 2012-10-23
WO2009128622A2 (ko) 2009-10-22

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