WO2009108002A3 - 유기 박막 트랜지스터 및 그 제조 방법 - Google Patents

유기 박막 트랜지스터 및 그 제조 방법 Download PDF

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Publication number
WO2009108002A3
WO2009108002A3 PCT/KR2009/000944 KR2009000944W WO2009108002A3 WO 2009108002 A3 WO2009108002 A3 WO 2009108002A3 KR 2009000944 W KR2009000944 W KR 2009000944W WO 2009108002 A3 WO2009108002 A3 WO 2009108002A3
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
film transistor
organic thin
manufacturing
channel
Prior art date
Application number
PCT/KR2009/000944
Other languages
English (en)
French (fr)
Other versions
WO2009108002A2 (ko
Inventor
홍문표
김동우
김건수
강상욱
손호진
Original Assignee
고려대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 고려대학교 산학협력단 filed Critical 고려대학교 산학협력단
Publication of WO2009108002A2 publication Critical patent/WO2009108002A2/ko
Publication of WO2009108002A3 publication Critical patent/WO2009108002A3/ko

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80—Constructional details
    • H10K10/82—Electrodes
    • H10K10/84—Ohmic electrodes, e.g. source or drain electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/464—Lateral top-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/466—Lateral bottom-gate IGFETs comprising only a single gate
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40—Organic transistors
    • H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462—Insulated gate field-effect transistors [IGFETs]
    • H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/10—Organic polymers or oligomers
    • H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
    • H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Thin Film Transistor (AREA)

Abstract

유기 반도체 물질에 의해 표면 처리된 소스 드레인 전극과 드레인 전극을 구비하는 유기 박막 트랜지스터 및 그 제조방법이 개시된다. 표면처리에 의해 전극과 채널 사이의 컨택층이 형성되며, 컨택층은 채널과 동종 또는 이종의 유기 반도체 물질로 형성될 수 있다. 표면처리된 전극은 채널과의 에너지 벽의 감소로 전하 이동도를 향상시킨다.
PCT/KR2009/000944 2008-02-29 2009-02-27 유기 박막 트랜지스터 및 그 제조 방법 WO2009108002A2 (ko)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020080018795A KR101124545B1 (ko) 2008-02-29 2008-02-29 유기 박막 트랜지스터 및 그 제조 방법
KR10-2008-0018795 2008-02-29

Publications (2)

Publication Number Publication Date
WO2009108002A2 WO2009108002A2 (ko) 2009-09-03
WO2009108002A3 true WO2009108002A3 (ko) 2009-10-29

Family

ID=41016598

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2009/000944 WO2009108002A2 (ko) 2008-02-29 2009-02-27 유기 박막 트랜지스터 및 그 제조 방법

Country Status (2)

Country Link
KR (1) KR101124545B1 (ko)
WO (1) WO2009108002A2 (ko)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103650191A (zh) * 2011-06-01 2014-03-19 原子能和替代能源委员会 包括有构造和形状改进的电极的有机元件

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101286526B1 (ko) * 2012-01-20 2013-07-19 동아대학교 산학협력단 박막 트랜지스터 및 그의 제조 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050104513A (ko) * 2004-04-29 2005-11-03 엘지.필립스 엘시디 주식회사 유기 박막 트랜지스터 및 그 제조 방법
KR20060078007A (ko) * 2004-12-30 2006-07-05 엘지.필립스 엘시디 주식회사 유기 박막 트랜지스터 소자의 제조 방법
KR20070096086A (ko) * 2005-12-09 2007-10-02 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 이의 제조 방법, 이를 구비한평판 디스플레이 장치
KR20070117850A (ko) * 2006-06-09 2007-12-13 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20050104513A (ko) * 2004-04-29 2005-11-03 엘지.필립스 엘시디 주식회사 유기 박막 트랜지스터 및 그 제조 방법
KR20060078007A (ko) * 2004-12-30 2006-07-05 엘지.필립스 엘시디 주식회사 유기 박막 트랜지스터 소자의 제조 방법
KR20070096086A (ko) * 2005-12-09 2007-10-02 삼성에스디아이 주식회사 유기 박막 트랜지스터 및 이의 제조 방법, 이를 구비한평판 디스플레이 장치
KR20070117850A (ko) * 2006-06-09 2007-12-13 삼성전자주식회사 박막 트랜지스터 표시판 및 그 제조 방법

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103650191A (zh) * 2011-06-01 2014-03-19 原子能和替代能源委员会 包括有构造和形状改进的电极的有机元件

Also Published As

Publication number Publication date
WO2009108002A2 (ko) 2009-09-03
KR20090093332A (ko) 2009-09-02
KR101124545B1 (ko) 2012-03-15

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