WO2009078149A1 - キャリア濃度測定装置およびキャリア濃度測定方法 - Google Patents
キャリア濃度測定装置およびキャリア濃度測定方法 Download PDFInfo
- Publication number
- WO2009078149A1 WO2009078149A1 PCT/JP2008/003715 JP2008003715W WO2009078149A1 WO 2009078149 A1 WO2009078149 A1 WO 2009078149A1 JP 2008003715 W JP2008003715 W JP 2008003715W WO 2009078149 A1 WO2009078149 A1 WO 2009078149A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- carrier concentration
- concentration measuring
- reflectance
- compound semiconductor
- inorganic compound
- Prior art date
Links
- 150000002484 inorganic compounds Chemical class 0.000 abstract 4
- 229910010272 inorganic material Inorganic materials 0.000 abstract 4
- 239000004065 semiconductor Substances 0.000 abstract 4
- 238000001514 detection method Methods 0.000 abstract 1
- 230000005855 radiation Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3581—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light using far infrared light; using Terahertz radiation
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
- G01N21/25—Colour; Spectral properties, i.e. comparison of effect of material on the light at two or more different wavelengths or wavelength bands
- G01N21/31—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry
- G01N21/35—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light
- G01N21/3563—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor
- G01N2021/3568—Investigating relative effect of material at wavelengths characteristic of specific elements or molecules, e.g. atomic absorption spectrometry using infrared light for analysing solids; Preparation of samples therefor applied to semiconductors, e.g. Silicon
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Health & Medical Sciences (AREA)
- General Physics & Mathematics (AREA)
- Biochemistry (AREA)
- Pathology (AREA)
- Immunology (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Engineering & Computer Science (AREA)
- General Health & Medical Sciences (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Toxicology (AREA)
- Investigating Or Analysing Materials By Optical Means (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
非破壊キャリア濃度測定装置100は、テラヘルツ光に対する無機化合物半導体の反射率とキャリア濃度との相関関係を記憶する記憶部101と、試料となる無機化合物半導体にテラヘルツ光105を照射する光照射部103と、照射されたテラヘルツ光105に対する無機化合物半導体の反射光108を検出する検出部109と、照射されたテラヘルツ光105と反射光108とを対比して無機化合物半導体の反射率の実測値を算出する反射率算出部111と、記憶された相関関係を参照し、反射率の実測値に対応する試料のキャリア濃度を読み取る読取部113と、を有する。
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/747,284 US8446576B2 (en) | 2007-12-14 | 2008-12-11 | Carrier concentration measuring device and carrier concentration measuring method |
EP08863267.4A EP2233914A4 (en) | 2007-12-14 | 2008-12-11 | Carrier concentration measuring device and carrier concentration measuring method |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007323395A JP5063325B2 (ja) | 2007-12-14 | 2007-12-14 | キャリア濃度測定装置およびキャリア濃度測定方法 |
JP2007-323395 | 2007-12-14 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009078149A1 true WO2009078149A1 (ja) | 2009-06-25 |
Family
ID=40795272
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/003715 WO2009078149A1 (ja) | 2007-12-14 | 2008-12-11 | キャリア濃度測定装置およびキャリア濃度測定方法 |
Country Status (4)
Country | Link |
---|---|
US (1) | US8446576B2 (ja) |
EP (1) | EP2233914A4 (ja) |
JP (1) | JP5063325B2 (ja) |
WO (1) | WO2009078149A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011054863A (ja) * | 2009-09-04 | 2011-03-17 | Institute Of Physical & Chemical Research | 移動度測定装置及びその方法、並びに、抵抗率測定装置及びその方法 |
WO2011137512A1 (en) | 2010-05-03 | 2011-11-10 | Aurora Control Technologies Inc. | Non-contact measurement of the dopant content of semiconductor layers |
JP2013529297A (ja) * | 2010-04-30 | 2013-07-18 | フラウンホッファー−ゲゼルシャフト ツァー フェーデルング デア アンゲバンテン フォルシュング エー ファー | THz測定システム、センサ機構、及び使用方法 |
JP2015108548A (ja) * | 2013-12-04 | 2015-06-11 | 古河機械金属株式会社 | 半導体の電気特性の測定装置、半導体の電気特性の測定方法、半導体の電気特性の測定装置の制御装置、およびコンピュータプログラム。 |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2013118575A1 (ja) * | 2012-02-10 | 2013-08-15 | 関西ペイント株式会社 | 塗料組成物 |
JP2013195281A (ja) | 2012-03-21 | 2013-09-30 | Furukawa Co Ltd | 電気抵抗測定装置及び電気抵抗測定方法 |
US9118163B2 (en) | 2012-04-11 | 2015-08-25 | The Board Of Trustees Of The University Of Alabama | Methods and apparatus for generating terahertz radiation |
EP3206014B1 (en) * | 2014-10-08 | 2020-02-26 | Riken | Optical response measuring device and optical response measuring method |
US9599555B2 (en) * | 2014-11-13 | 2017-03-21 | Rochester Institute Of Technology | Doping profile measurement using terahertz time domain spectroscopy (THz-TDS) |
JP6296001B2 (ja) * | 2015-05-20 | 2018-03-20 | 信越半導体株式会社 | シリコンエピタキシャルウェーハの製造方法及び評価方法 |
Citations (6)
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JP2002005828A (ja) | 2000-06-20 | 2002-01-09 | Tochigi Nikon Corp | 半導体の不純物濃度検査装置及び検査方法 |
JP2004003902A (ja) * | 2002-06-03 | 2004-01-08 | Tochigi Nikon Corp | テラヘルツ光を用いた平面基板の電気特性測定方法 |
JP2004125712A (ja) * | 2002-10-04 | 2004-04-22 | Matsushita Electric Ind Co Ltd | 分光分析装置 |
JP2005315708A (ja) | 2004-04-28 | 2005-11-10 | Japan Science & Technology Agency | テラヘルツ電磁波を用いた物性測定装置 |
WO2006030756A1 (ja) * | 2004-09-13 | 2006-03-23 | The University Of Tokyo | 高周波電磁波を用いた計測方法及び計測装置 |
JP2007298357A (ja) * | 2006-04-28 | 2007-11-15 | Canon Inc | 検体情報取得装置、及び検体情報取得方法 |
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GB2371111B (en) * | 2001-01-16 | 2005-05-04 | Teraprobe Ltd | Apparatus and method for investigating a sample |
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JP4154388B2 (ja) * | 2004-12-27 | 2008-09-24 | キヤノン株式会社 | 被対象物を透過した電磁波の状態を検出するための検出装置 |
US7459687B2 (en) * | 2006-04-06 | 2008-12-02 | New Jersey Institute Of Technology | Non-linear terahertz spectroscopy for defect density identification in high k dielectric films |
US7593112B2 (en) * | 2006-10-02 | 2009-09-22 | Eoir Technologies, Inc. | Systems and methods for comparative interferogram spectrometry |
-
2007
- 2007-12-14 JP JP2007323395A patent/JP5063325B2/ja not_active Expired - Fee Related
-
2008
- 2008-12-11 EP EP08863267.4A patent/EP2233914A4/en not_active Withdrawn
- 2008-12-11 WO PCT/JP2008/003715 patent/WO2009078149A1/ja active Application Filing
- 2008-12-11 US US12/747,284 patent/US8446576B2/en not_active Expired - Fee Related
Patent Citations (6)
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JP2002005828A (ja) | 2000-06-20 | 2002-01-09 | Tochigi Nikon Corp | 半導体の不純物濃度検査装置及び検査方法 |
JP2004003902A (ja) * | 2002-06-03 | 2004-01-08 | Tochigi Nikon Corp | テラヘルツ光を用いた平面基板の電気特性測定方法 |
JP2004125712A (ja) * | 2002-10-04 | 2004-04-22 | Matsushita Electric Ind Co Ltd | 分光分析装置 |
JP2005315708A (ja) | 2004-04-28 | 2005-11-10 | Japan Science & Technology Agency | テラヘルツ電磁波を用いた物性測定装置 |
WO2006030756A1 (ja) * | 2004-09-13 | 2006-03-23 | The University Of Tokyo | 高周波電磁波を用いた計測方法及び計測装置 |
JP2007298357A (ja) * | 2006-04-28 | 2007-11-15 | Canon Inc | 検体情報取得装置、及び検体情報取得方法 |
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See also references of EP2233914A4 |
USAMI M. ET AL.: "Terahertz Pulse Bunkoho ni yoru Handotai Epitaxial Maku Hyoka", BUNSEKI KAGAKU, vol. 52, no. 6, 5 June 2003 (2003-06-05), pages 455 - 460, XP008142288 * |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2011054863A (ja) * | 2009-09-04 | 2011-03-17 | Institute Of Physical & Chemical Research | 移動度測定装置及びその方法、並びに、抵抗率測定装置及びその方法 |
JP2013529297A (ja) * | 2010-04-30 | 2013-07-18 | フラウンホッファー−ゲゼルシャフト ツァー フェーデルング デア アンゲバンテン フォルシュング エー ファー | THz測定システム、センサ機構、及び使用方法 |
WO2011137512A1 (en) | 2010-05-03 | 2011-11-10 | Aurora Control Technologies Inc. | Non-contact measurement of the dopant content of semiconductor layers |
KR20130060217A (ko) * | 2010-05-03 | 2013-06-07 | 오로라 컨트롤 테크놀로지스 인크. | 반도체 층의 도펀트 함유량의 비접촉 측정 |
EP2567217A4 (en) * | 2010-05-03 | 2016-03-09 | Aurora Control Technologies Inc | CONTACT-FREE MEASUREMENT OF THE DOTING AGENT OF SEMICONDUCTOR LAYERS |
KR101939406B1 (ko) * | 2010-05-03 | 2019-01-16 | 오로라 솔라 테크놀로지스 (캐나다) 인크. | 반도체 층의 도펀트 함유량의 비접촉 측정 |
JP2015108548A (ja) * | 2013-12-04 | 2015-06-11 | 古河機械金属株式会社 | 半導体の電気特性の測定装置、半導体の電気特性の測定方法、半導体の電気特性の測定装置の制御装置、およびコンピュータプログラム。 |
Also Published As
Publication number | Publication date |
---|---|
EP2233914A1 (en) | 2010-09-29 |
JP5063325B2 (ja) | 2012-10-31 |
US8446576B2 (en) | 2013-05-21 |
JP2009145223A (ja) | 2009-07-02 |
US20100271618A1 (en) | 2010-10-28 |
EP2233914A4 (en) | 2018-01-03 |
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