WO2009071587A3 - Back-thinned radiation detector with '3d' active region and corresponding methods of manufacturing and use - Google Patents

Back-thinned radiation detector with '3d' active region and corresponding methods of manufacturing and use Download PDF

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Publication number
WO2009071587A3
WO2009071587A3 PCT/EP2008/066716 EP2008066716W WO2009071587A3 WO 2009071587 A3 WO2009071587 A3 WO 2009071587A3 EP 2008066716 W EP2008066716 W EP 2008066716W WO 2009071587 A3 WO2009071587 A3 WO 2009071587A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
silicon
wafer
particles
detector
Prior art date
Application number
PCT/EP2008/066716
Other languages
French (fr)
Other versions
WO2009071587A2 (en
Inventor
Francisco Garcia
Risto Orava
Manuel Lozano
Giulio Pellegrini
Original Assignee
Teknoflow Oy
Consejo Superior De Investigaciones Científicas (Csic)
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Teknoflow Oy, Consejo Superior De Investigaciones Científicas (Csic) filed Critical Teknoflow Oy
Priority to EP08858023A priority Critical patent/EP2227828A2/en
Publication of WO2009071587A2 publication Critical patent/WO2009071587A2/en
Publication of WO2009071587A3 publication Critical patent/WO2009071587A3/en
Priority to US12/794,627 priority patent/US8461541B2/en

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/24—Measuring radiation intensity with semiconductor detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T3/00—Measuring neutron radiation
    • G01T3/08—Measuring neutron radiation with semiconductor detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/1446—Devices controlled by radiation in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14601—Structural or functional details thereof
    • H01L27/14634—Assemblies, i.e. Hybrid structures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035236—Superlattices; Multiple quantum well structures
    • H01L31/035263—Doping superlattices, e.g. nipi superlattices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Hardware Design (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Measurement Of Radiation (AREA)
  • Light Receiving Elements (AREA)

Abstract

The silicon detector of the invention for detecting high-intensity radiation or particles, comprises a silicon wafer having an entrance opening (1) etched through a low- resistivity volume of silicon, (4) a sensitive volume of high- resistivity silicon (3) for converting the radiation particles into detectable charges, and a passivation layer (6) between the low and high-resistivity silicon layers. The detector further comprises electrodes (2) built in the form of vertical channels for collecting the charges etched into the sensitive volume, and read-out electronics (5) for generating signals from the collected charges. The detector is constructed to take in the radiation or particles to be detected directly through the passivation layer and in that the thickness of the sensitive layer having been selected as a function of the mean free path of the particles to be detected. In the method of the invention for manufacturing such a detector a semiconductor-on-insulator (SOI) wafer. The method is mainly characterized by the steps of selecting the thickness of one the silicon layer to be the sensitive layer at the front surface as a function of the mean free path of the particles to be detected, growing or depositing an insulation layer on both surfaces of the wafer by leaving open a window, etching holes into the layer to constitute the sensitive layer to reach the silicon oxide layer, doping the holes to create electrodes, depositing and patterning a metal layer at the front surface of the wafer and routing the metal layer to read-out electronic, and forming a window in the back surface of the wafer to reach the silicon oxide layer.
PCT/EP2008/066716 2007-12-04 2008-12-03 Back-thinned radiation detector with '3d' active region and corresponding methods of manufacturing and use WO2009071587A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP08858023A EP2227828A2 (en) 2007-12-04 2008-12-03 Back-thinned radiation detector with "3d" active region and corresponding methods of manufacturing and use
US12/794,627 US8461541B2 (en) 2007-12-04 2010-06-04 Radiation detector, method of manufacturing a radiation detector and use of the detector for measuring radiation

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FI20070939 2007-12-04
FI20070939A FI121828B (en) 2007-12-04 2007-12-04 Radiation detector, method of producing a radiation detector and use of the detector for measuring radiation

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US12/794,627 Continuation US8461541B2 (en) 2007-12-04 2010-06-04 Radiation detector, method of manufacturing a radiation detector and use of the detector for measuring radiation

Publications (2)

Publication Number Publication Date
WO2009071587A2 WO2009071587A2 (en) 2009-06-11
WO2009071587A3 true WO2009071587A3 (en) 2009-09-17

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/066716 WO2009071587A2 (en) 2007-12-04 2008-12-03 Back-thinned radiation detector with '3d' active region and corresponding methods of manufacturing and use

Country Status (4)

Country Link
US (1) US8461541B2 (en)
EP (2) EP2227828A2 (en)
FI (1) FI121828B (en)
WO (1) WO2009071587A2 (en)

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Publication number Priority date Publication date Assignee Title
US8686529B2 (en) 2010-01-19 2014-04-01 Osi Optoelectronics, Inc. Wavelength sensitive sensor photodiodes
US7709921B2 (en) 2008-08-27 2010-05-04 Udt Sensors, Inc. Photodiode and photodiode array with improved performance characteristics
US8519503B2 (en) 2006-06-05 2013-08-27 Osi Optoelectronics, Inc. High speed backside illuminated, front side contact photodiode array
US7576369B2 (en) * 2005-10-25 2009-08-18 Udt Sensors, Inc. Deep diffused thin photodiodes
US8120023B2 (en) 2006-06-05 2012-02-21 Udt Sensors, Inc. Low crosstalk, front-side illuminated, back-side contact photodiode array
US9178092B2 (en) 2006-11-01 2015-11-03 Osi Optoelectronics, Inc. Front-side illuminated, back-side contact double-sided PN-junction photodiode arrays
US8005326B2 (en) * 2008-07-10 2011-08-23 Taiwan Semiconductor Manufacturing Company, Ltd. Optical clock signal distribution using through-silicon vias
EP2335288A4 (en) 2008-09-15 2013-07-17 Osi Optoelectronics Inc Thin active layer fishbone photodiode with a shallow n+ layer and method of manufacturing the same
US8399909B2 (en) 2009-05-12 2013-03-19 Osi Optoelectronics, Inc. Tetra-lateral position sensing detector
EP2256810A1 (en) * 2009-05-29 2010-12-01 Fondazione Bruno Kessler Method for the production of a 3D solid-state radiation detector
US8263940B2 (en) 2009-10-26 2012-09-11 Finphys Oy Neutron detector with neutron converter, method for manufacturing the neutron detector and neutron imaging apparatus
GB2474720A (en) 2009-10-26 2011-04-27 Finphys Oy Neutron Detector
MX2012007991A (en) * 2010-01-08 2012-12-10 Tri Alpha Energy Inc Conversion of high-energy photons into electricity.
KR101605424B1 (en) 2010-03-19 2016-03-22 인비사지 테크놀로지스, 인크. Image sensors employing sensitized semiconductor diodes
WO2011156507A1 (en) 2010-06-08 2011-12-15 Edward Hartley Sargent Stable, sensitive photodetectors and image sensors including circuits, processes, and materials for enhanced imaging performance
GB201107076D0 (en) 2011-04-27 2011-06-08 Finphys Oy Neutron detector
US8798229B2 (en) * 2011-09-30 2014-08-05 General Electric Company Detector modules and methods of manufacturing
US9564252B2 (en) * 2012-02-15 2017-02-07 Hs Foils Oy Method and arrangement for manufacturing a radiation window
US8912615B2 (en) 2013-01-24 2014-12-16 Osi Optoelectronics, Inc. Shallow junction photodiode for detecting short wavelength light
US10054691B1 (en) 2013-03-01 2018-08-21 The United States of America as Represented by the Admin of National Aeronautics and Space Administration Fast, large area, wide band GAP UV photodetector for cherenkov light detection
US10078142B2 (en) 2014-03-26 2018-09-18 California Institute Of Technology Sensor integrated metal dielectric filters for solar-blind silicon ultraviolet detectors
WO2015148861A1 (en) * 2014-03-26 2015-10-01 California Institute Of Technology Subnanosecond scintillation detector
US9941316B2 (en) 2014-06-10 2018-04-10 Invisage Technologies, Inc. Multi-terminal optoelectronic devices for light detection
US9754992B2 (en) 2015-01-21 2017-09-05 Terapede Systems Inc. Integrated scintillator grid with photodiodes
CN109155321A (en) 2016-05-11 2019-01-04 G射线工业公司 Single piece of silicon pixel detectors and system and method for detection of particles
WO2017213622A1 (en) * 2016-06-06 2017-12-14 Terapede Systems Inc. Integrated scintillator grid with photodiodes
WO2018075705A1 (en) * 2016-10-20 2018-04-26 Invisage Technologies, Inc. Image sensor with electron and hole collection electrodes
GB201703785D0 (en) * 2017-03-09 2017-04-26 Univ Bristol Radiation detector
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WO2020142975A1 (en) * 2019-01-10 2020-07-16 Shenzhen Xpectvision Technology Co., Ltd. Semiconductor radiation detector
CN112083470B (en) * 2020-09-02 2023-11-24 重庆中易智芯科技有限责任公司 Resistance state sensitive CdZnTe radiation detector and manufacturing method thereof
US11927616B2 (en) 2021-03-30 2024-03-12 International Business Machines Corporation Evaluation of wafer carcass alpha particle emission

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56129380A (en) * 1980-03-13 1981-10-09 Fuji Electric Co Ltd Semiconductor radioactive rays detector
FR2656738A1 (en) * 1989-12-29 1991-07-05 Telemecanique METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, DEVICE AND SEMICONDUCTOR COMPONENT OBTAINED BY THE METHOD.
FR2666453A1 (en) * 1990-08-31 1992-03-06 Commissariat Energie Atomique Bank of photocells mounted in series
US6259099B1 (en) * 1996-12-18 2001-07-10 Commissariat A L'energie Atomique Ultra-thin ionizing radiation detector and methods for making same
DE10127952A1 (en) * 2001-06-08 2002-12-19 Infineon Technologies Ag Lateral pin diode and manufacturing process has separated p and n regions on a substrate with a region of lower dopant concentration between them
US20030122210A1 (en) * 2002-01-03 2003-07-03 International Business Machines Corporation Semiconductor-on-insulator lateral p-i-n photodetector with a reflecting mirror and backside contact and method for forming the same
US6943409B1 (en) * 2004-05-24 2005-09-13 International Business Machines Corporation Trench optical device
EP1833095A1 (en) * 2006-03-06 2007-09-12 Austriamicrosystems AG Photo diode having reduced dark current

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR2715250B1 (en) 1994-01-19 1996-04-05 Commissariat Energie Atomique Three-dimensional radiation detection device and method of manufacturing this device.
US20050017185A1 (en) * 2003-07-01 2005-01-27 King Douglas Beverley Stevenson Radiation detector

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS56129380A (en) * 1980-03-13 1981-10-09 Fuji Electric Co Ltd Semiconductor radioactive rays detector
FR2656738A1 (en) * 1989-12-29 1991-07-05 Telemecanique METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, DEVICE AND SEMICONDUCTOR COMPONENT OBTAINED BY THE METHOD.
FR2666453A1 (en) * 1990-08-31 1992-03-06 Commissariat Energie Atomique Bank of photocells mounted in series
US6259099B1 (en) * 1996-12-18 2001-07-10 Commissariat A L'energie Atomique Ultra-thin ionizing radiation detector and methods for making same
DE10127952A1 (en) * 2001-06-08 2002-12-19 Infineon Technologies Ag Lateral pin diode and manufacturing process has separated p and n regions on a substrate with a region of lower dopant concentration between them
US20030122210A1 (en) * 2002-01-03 2003-07-03 International Business Machines Corporation Semiconductor-on-insulator lateral p-i-n photodetector with a reflecting mirror and backside contact and method for forming the same
US6943409B1 (en) * 2004-05-24 2005-09-13 International Business Machines Corporation Trench optical device
EP1833095A1 (en) * 2006-03-06 2007-09-12 Austriamicrosystems AG Photo diode having reduced dark current

Also Published As

Publication number Publication date
FI20070939A0 (en) 2007-12-04
WO2009071587A2 (en) 2009-06-11
EP3139409A1 (en) 2017-03-08
FI121828B (en) 2011-04-29
US20110079728A1 (en) 2011-04-07
FI20070939A (en) 2009-06-05
EP2227828A2 (en) 2010-09-15
US8461541B2 (en) 2013-06-11

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