WO2009069684A1 - 放熱構造、該放熱構造の製造方法及び該放熱構造を用いた放熱装置、ダイヤモンドヒートシンク、該ダイヤモンドヒートシンクの製造方法及び該ダイヤモンドヒートシンクを用いた放熱装置、並びに放熱方法 - Google Patents

放熱構造、該放熱構造の製造方法及び該放熱構造を用いた放熱装置、ダイヤモンドヒートシンク、該ダイヤモンドヒートシンクの製造方法及び該ダイヤモンドヒートシンクを用いた放熱装置、並びに放熱方法 Download PDF

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Publication number
WO2009069684A1
WO2009069684A1 PCT/JP2008/071512 JP2008071512W WO2009069684A1 WO 2009069684 A1 WO2009069684 A1 WO 2009069684A1 JP 2008071512 W JP2008071512 W JP 2008071512W WO 2009069684 A1 WO2009069684 A1 WO 2009069684A1
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Prior art keywords
heat dissipation
dissipation structure
diamond
heat
producing
Prior art date
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PCT/JP2008/071512
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English (en)
French (fr)
Inventor
Chihiro Kawai
Michiko Kusunoki
Wataru Norimatsu
Original Assignee
Sumitomo Electric Industries, Ltd.
National University Corporation Nagoya University
Japan Fine Ceramics Center
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Publication date
Application filed by Sumitomo Electric Industries, Ltd., National University Corporation Nagoya University, Japan Fine Ceramics Center filed Critical Sumitomo Electric Industries, Ltd.
Publication of WO2009069684A1 publication Critical patent/WO2009069684A1/ja

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    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/45—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements
    • C04B41/50—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials
    • C04B41/5001—Coating or impregnating, e.g. injection in masonry, partial coating of green or fired ceramics, organic coating compositions for adhering together two concrete elements with inorganic materials with carbon or carbonisable materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
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    • C01B32/158—Carbon nanotubes
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    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/009—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone characterised by the material treated
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B41/00—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone
    • C04B41/80—After-treatment of mortars, concrete, artificial stone or ceramics; Treatment of natural stone of only ceramics
    • C04B41/81—Coating or impregnation
    • C04B41/85—Coating or impregnation with inorganic materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
    • H01L23/3732—Diamonds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00—Details of semiconductor or other solid state devices
    • H01L23/34—Arrangements for cooling, heating, ventilating or temperature compensation ; Temperature sensing arrangements
    • H01L23/36—Selection of materials, or shaping, to facilitate cooling or heating, e.g. heatsinks
    • H01L23/373—Cooling facilitated by selection of materials for the device or materials for thermal expansion adaptation, e.g. carbon
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    • C04B2111/00—Mortars, concrete or artificial stone or mixtures to prepare them, characterised by specific function, property or use
    • C04B2111/00474—Uses not provided for elsewhere in C04B2111/00
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    • H01L2924/0001—Technical content checked by a classifier
    • H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Nanotechnology (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • General Physics & Mathematics (AREA)
  • Physics & Mathematics (AREA)
  • Inorganic Chemistry (AREA)
  • Structural Engineering (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Composite Materials (AREA)
  • Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)

Abstract

　本発明は、高い熱伝導率を有し、かつ相手材表面への接触性が優れるために接触熱抵抗が低く、かつ相手材との間に発生する熱応力を吸収可能な放熱構造体を提供する。かかる課題は、基板面の一部又は全部がＳiＣである基板を真空中で加熱してケイ素を昇華させ、該基板面にカーボンナノチューブ（ＣＮＴ）からなる層を形成せしめた放熱構造により解決される。特にＣＮＴからなる層が基板面に対してほぼ垂直に成長した複数のＣＮＴからなる層であることが好ましい。ＣＮＴを最表面に有する本発明の放熱構造は、ＣＮＴが微細な先端が相手材表面の微小な凹凸にも隙間なく接触するため相手材との接触熱抵抗が低い。
PCT/JP2008/071512 2007-11-29 2008-11-27 放熱構造、該放熱構造の製造方法及び該放熱構造を用いた放熱装置、ダイヤモンドヒートシンク、該ダイヤモンドヒートシンクの製造方法及び該ダイヤモンドヒートシンクを用いた放熱装置、並びに放熱方法 WO2009069684A1 (ja)

Applications Claiming Priority (10)

Application Number Priority Date Filing Date Title
JP2007308263 2007-11-29
JP2007-308263 2007-11-29
JP2008-020092 2008-01-31
JP2008020092 2008-01-31
JP2008020093 2008-01-31
JP2008-020093 2008-01-31
JP2008-075328 2008-03-24
JP2008075143 2008-03-24
JP2008075328 2008-03-24
JP2008-075143 2008-03-24

Publications (1)

Publication Number Publication Date
WO2009069684A1 true WO2009069684A1 (ja) 2009-06-04

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PCT/JP2008/071512 WO2009069684A1 (ja) 2007-11-29 2008-11-27 放熱構造、該放熱構造の製造方法及び該放熱構造を用いた放熱装置、ダイヤモンドヒートシンク、該ダイヤモンドヒートシンクの製造方法及び該ダイヤモンドヒートシンクを用いた放熱装置、並びに放熱方法

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Country Link
WO (1) WO2009069684A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012188305A (ja) * 2011-03-09 2012-10-04 Nitto Denko Corp 赤外吸収熱伝導部材
JP2013168621A (ja) * 2012-01-16 2013-08-29 National Institute Of Advanced Industrial & Technology ３層構造積層ダイヤモンド系基板、パワー半導体モジュール用放熱実装基板およびそれらの製造方法
WO2015138110A1 (en) * 2014-03-10 2015-09-17 The Boeing Company Graphene-based thermal management systems
WO2016013494A1 (ja) * 2014-07-23 2016-01-28 株式会社日立製作所 溶融積層造形に用いる合金粉末及び合金粉末の製造方法
JP2016029195A (ja) * 2014-07-25 2016-03-03 株式会社日立製作所 合金粉末の製造方法
US10839975B2 (en) 2014-03-10 2020-11-17 The Boeing Company Graphene coated electronic components
WO2021015006A1 (ja) * 2019-07-23 2021-01-28 日立造船株式会社 電気デバイスユニット

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10265208A (ja) * 1997-03-21 1998-10-06 Fine Ceramics Center カーボンナノチューブ及びカーボンナノチューブ膜の製造方法
JP2001250468A (ja) * 2000-03-03 2001-09-14 Noritake Co Ltd 電界電子放出装置およびその製造方法
JP2004076044A (ja) * 2002-08-12 2004-03-11 Sumitomo Electric Ind Ltd セラミックス−金属系複合材料及びその製造方法
JP2004076043A (ja) * 2002-08-12 2004-03-11 Sumitomo Electric Ind Ltd セラミックス−金属系複合材料及びその製造方法
WO2006048848A1 (en) * 2004-11-04 2006-05-11 Koninklijke Philips Electronics N.V. Nanotube-based fluid interface material and approach
JP2009004577A (ja) * 2007-06-21 2009-01-08 Shimane Pref Gov 冷却装置の製造方法
JP2009004576A (ja) * 2007-06-21 2009-01-08 Shimane Pref Gov 冷却装置

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10265208A (ja) * 1997-03-21 1998-10-06 Fine Ceramics Center カーボンナノチューブ及びカーボンナノチューブ膜の製造方法
JP2001250468A (ja) * 2000-03-03 2001-09-14 Noritake Co Ltd 電界電子放出装置およびその製造方法
JP2004076044A (ja) * 2002-08-12 2004-03-11 Sumitomo Electric Ind Ltd セラミックス−金属系複合材料及びその製造方法
JP2004076043A (ja) * 2002-08-12 2004-03-11 Sumitomo Electric Ind Ltd セラミックス−金属系複合材料及びその製造方法
WO2006048848A1 (en) * 2004-11-04 2006-05-11 Koninklijke Philips Electronics N.V. Nanotube-based fluid interface material and approach
JP2009004577A (ja) * 2007-06-21 2009-01-08 Shimane Pref Gov 冷却装置の製造方法
JP2009004576A (ja) * 2007-06-21 2009-01-08 Shimane Pref Gov 冷却装置

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012188305A (ja) * 2011-03-09 2012-10-04 Nitto Denko Corp 赤外吸収熱伝導部材
JP2013168621A (ja) * 2012-01-16 2013-08-29 National Institute Of Advanced Industrial & Technology ３層構造積層ダイヤモンド系基板、パワー半導体モジュール用放熱実装基板およびそれらの製造方法
WO2015138110A1 (en) * 2014-03-10 2015-09-17 The Boeing Company Graphene-based thermal management systems
JP2017517137A (ja) * 2014-03-10 2017-06-22 ザ・ボーイング・カンパニーＴｈｅ Ｂｏｅｉｎｇ Ｃｏｍｐａｎｙ グラフェン系熱管理システム
US9930808B2 (en) 2014-03-10 2018-03-27 The Boeing Company Graphene-based thermal management systems
US10839975B2 (en) 2014-03-10 2020-11-17 The Boeing Company Graphene coated electronic components
WO2016013494A1 (ja) * 2014-07-23 2016-01-28 株式会社日立製作所 溶融積層造形に用いる合金粉末及び合金粉末の製造方法
JP2016029195A (ja) * 2014-07-25 2016-03-03 株式会社日立製作所 合金粉末の製造方法
WO2021015006A1 (ja) * 2019-07-23 2021-01-28 日立造船株式会社 電気デバイスユニット
JP2021019144A (ja) * 2019-07-23 2021-02-15 日立造船株式会社 電気デバイスユニット

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