WO2009066983A2 - Method of curing defects in spin-on-glass - Google Patents
Method of curing defects in spin-on-glass Download PDFInfo
- Publication number
- WO2009066983A2 WO2009066983A2 PCT/MY2008/000148 MY2008000148W WO2009066983A2 WO 2009066983 A2 WO2009066983 A2 WO 2009066983A2 MY 2008000148 W MY2008000148 W MY 2008000148W WO 2009066983 A2 WO2009066983 A2 WO 2009066983A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- glass
- spin
- sog
- angstroms
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/31058—After-treatment of organic layers
Abstract
The present invention relates to a method of curing defects in a spin-on-glass more particularly bubble defects on the spin-on-glass. The advantage of the present invention is eliminate o reduce bubble effects on all the layers of SOG i.e. the first layer of SOG and the second and subsequent layers of SOG.
Description
Method of Curing Defects in Spin-on-Glass
Technical Field of the Invention
The present invention relates to a method for curing a semiconductor device more particularly, on wafer surfaces.
Background Art
Spin-on coatings have been used in integrated circuit manufacture for many years. These are materials that can be applied in liquid form and subsequently hardened or cured to form solid or semi solid layers. Recently, spin-on glasses (SOGs) have received widespread use and success in wafer surface planarization but have also plagued by adhesion problem causing blistering and corrosion problems.
SOGs is a spin-on process whereby fluid is deposited onto a wafer or substrate. The depositing process is divided into four stages namely; deposition, spin-up, thinning and evaporation.
Improper or insufficient curing of first SOG layer can bring about bubble formation and blistering in films subsequently deposited on the SOG layer. Micro bubbles tend to form in SOG layers after subsequent SOG layers are deposited over the cured SOG layers. The micro bubbles resulting from adhesion problem of the second and any subsequent SOG layers deposited on the first cured SOG layer. Because the SOG layers are relatively thin, the micro bubbles are prone to cause pinholes and virtual defects, which pose reliability concerns in the inter-layer dielectric (ILD) layers.
Thus, there is a need to overcome these drawbacks of the conventional spin-on process.
Summary of the Invention
The present invention relates to a method of treating bubble defects formed over a spin-on- glass layer comprising of
providing a silicon wafer; depositing a layer of dielectric on said silicon wafer; and depositing a second layer of spin-on-glass on the first layer of spin-on-glass via a spinning process.
According to an aspect of the present invention, the layer of dielectric is an inter-layer dielectric (ILD).
According to an aspect of the present invention, the (ILD) is comprised of:
a layer of tetra-ethyl-ortho-silicate glass and a first layer of spin-on-glass on the layer of tetra-ethyl-ortho-silicate glass via a spinning process.
According to an aspect of the present invention the layer of tetra-ethyl-ortho-silicate glass is having a thickness of between 5,000 and 8,000 angstroms.
According to another aspect of the present invention the first layer of dielectric is preferably with a thickness of around 7,000 angstroms.
According to another aspect of the present invention the first layer of spin-on-glass is having a thickness of between 1 ,600 and 6,000 angstroms.
According to another aspect of the present invention the first layer of spin-on-glass is preferably of a thickness of and around 3,500 angstroms.
Further, according to still another aspect of the present invention the first layer of spin-on- glass is treated with an ionised oxygen flow at temperatures from 4O0C to 1000C.
Further, according to still another aspect of the present invention the first layer of spin-on- glass is treated with an ionised oxygen flow preferably at temperature of and around 60 0C.
Further, according to still another aspect of the present invention the first layer of spin-on- glass is treated with an ionised oxygen flow for periods ranging from 30 seconds to 3 minutes.
Further, according to still another aspect of the present invention first layer of spin-on-glass is treated with an ionised oxygen flow preferably for a period of and around 120 seconds.
Further, according to still another aspect of the present invention the ionised oxygen flow is preferably selected from oxygen plasma treatment.
Further, according to still another aspect of the present invention the second layer of spin- on-glass having a thickness of between 1,600 and 6,000 angstroms.
Further, according to still another aspect of the present invention the second layer of spin- on-glass preferably at a thickness of and around 3,500 angstroms.
Brief Description of the Drawings
The above objectives and advantages of the present invention will become more apparent by reading the detailed explanation of the embodiments with reference to the accompanying drawings in which:
Figure 1 illustrates a sectional view to explain a method of deposited a first layer of dielectric (ILD) according to the present invention;
Figure 2 illustrates a sectional view to explain a method of depositing a first layer of spin- on-glass (SOG) on the first layer of dielectric (ILD) according to the present invention;
Figure 3 illustrates a sectional view to explain a method of depositing a second layer of spin-on-glass (SOG) on the first layer of spin-on-glass (SOG); and
Figure 4 illustrates a tetramer structure of spin-on-glass before and after O2 plasma treatment.
Description of the Preferred Embodiments
Figure 1 shows a sectional view to explain a method of depositing a first layer of dielectric (ILD) according to the present invention. Wafer, as substrate 130 is prepared from an active area until it reaches to metal level 110. A layer of tetra-ethyl-ortho-silicate (TEOS) glass layer 120 preferably selected from tetra-ethyl-ortho-silicate oxide type is deposited on the substrate 130. The tetra-ethyl-ortho-silicate (TEOS) glass layer is deposited at the thickness of 5,000 to 8,000 angstroms preferably 7,000 angstroms.
After the TEOS oxide has been deposited, a first layer of spin-on-glass (SOG) 210 is spun on the top of the TEOS layer 120 to fill in the gaps between TEOS layer 120 to form an inter-layer dielectric (ILD) 220 as shown in Figure 2. The spinning process is treated with the oxygen plasma treatment and heated at the range of temperature of between 4O0C and 1000C, preferably 60 0C for a period of 30 seconds to 3 minutes, preferably 120 seconds. The oxygen plasma treatment is supplied with constant ionised oxygen during the spinning process. The thickness of the first layer of SOG 210 at a thickness of the range of between 1,600 to 6,000 angstroms preferably 3,500 angstroms.
Finally, a second layer of spin-on-glass (SOG) 310 is deposited on the first layer of SOG 210 preferably at a thickness of the range of between 1 ,600 to 6,000 angstroms, preferably 3,500 angstroms as shown in Figure 3. After each layer of deposition, the wafer is inspected under a microscope to check for any bubble defects on each layer of the wafer. The advantage of the present Invention is that it eliminates bubble effect all the layers of SOG i.e. the first layer of SOG and the second and subsequent layer of SOG.
Example
Experiments had been conducted on the various treatment conditions on a wafer as tabulated in Table 1 below. After each treatment, wafers were inspected under microscope to check for any bubble defects. For comparison, one control wafer was prepared with the same deposition layer but without any treatment conditions. After a first layer of SOG coating, the second SOG layer was applied to provide required thickness. Visual inspection under microscope had been implemented to verify the bubble effect after every deposition step; first TEOS deposition, first layer of SOG with and without treatment conditions such as temperature and period of treatment before depositing the second layer of SOG. Wafers were inspected thoroughly to ensure that no other conditions affected to the results.
Wafer no. First TEOS First layer Ultraviolet Plasma O2 Second thickness of SOG exposure treatment layer of
SOG
1 7,000 A 3,500 A UV 170°C,45 - 3,500 A seconds
7,000 A 3,50O A 6O0C, 3,50O A
Oxygen plasma , 120 watt
7,000 A 3,500 A 6O0C, 3,500 A
Oxygen plasma , 120 watt
7,000 A 3,500 A 3,50O A
Visual inspection on the control revealed bubble defects after the second layer of SOG coating. The defects were also found on Wafer no. 1 , which was treated with UV exposure.
However, no bubble defect was observed on wafer no. 2 and 3 after second layer of SOG coating.
Bubble defects on Wafer no. 1 show that Ultraviolet (UV) treatment in a nitrogen environment was unable to treat the first layer of SOG to become a hydrophilic surface.
The surface consists of silicon and hydrogen bonds, which formed a hydrophobic surface.
This caused the second layer of SOG layer did not adhere to the first layer of SOG causing the bubble defects while the treatment with oxygen plasma was able to change the first layer of SOG surface to become hydrophilic. Oxygen was ionised during the plasma process thereby reducing the number silicon-hydrogen Si-H bonds and increasing the silicon-hydrogen oxide bonds Si-O-H, a high free energy for a hydrophilic surface.
Hydrophilic surface improves the adhesion of the first layer of SOG layer to the second layer of SOG, hence no bubbles appear in the double coat of SOG process as can be seen on wafer no. 2 and 3 as shown in Figure 4.
Double coat of SOG layers are sufficient to improve planarisation in ILD scheme without chemical-mechanical planarisation (CMP) process. With a double coat process, 93.68% planarisation can be achieved compared to a single layer coat of SOG process, which is only 75.83%. The appearance of bubble defects is a double layer coat of SOG can be solved by implementing oxygen plasma treatment prior to the second SOG coating.
Claims
1. A method of treating bubble defects formed over a spin-on-glass layer comprising of
providing a silicon wafer; depositing a layer of dielectric on said silicon wafer; and depositing a second layer and subsequent of spin-on-glass on said layer of dielectric via a spinning process.
2. The method as claimed in Claim 1 wherein said layer of dielectric is an inter-layer dielectric (ILD).
3. The method as claimed in Claim 2 wherein said inter-layer dielectric (ILD) further comprising
a layer of tetra-ethyl-ortho-silicate glass and
a first layer of spin-on-glass on said layer of tetra-ethyl-ortho-silicate glass via a spinning process.
4. The method as claimed in Claim 3 wherein said layer of tetra-ethyl-ortho-silicate glass having a thickness of between 5,000 and 8,000 angstroms.
5. The method as claimed in Claim 3 wherein said first layer of dielectric preferably with a thickness of and around 7,000 angstroms.
6. The method as claimed in Claim 3 wherein said first layer of spin-on-glass having a thickness of between 1 ,600 and 6,000 angstroms.
7. The method as claimed in Claim 3 wherein said first layer of spin-on-glass preferably at a thickness of and around 3,500 angstroms.
8. The method as claimed in Claim 3 wherein said first layer of spin-on-glass or layer of spin-on-glass to be coated is treated with an ionised oxygen flow at temperatures from of between 4O0C to 1000C.
9. The method as claimed in Claim 3 wherein said first layer of spin-on-glass or layer of spin-on-glass to be coated is treated with an ionised oxygen flow preferably at temperature of and around 60 0C.
10. The method as claimed in Claim 3 wherein said first layer of spin-on-glass or layer of spin-on-glass to be coated is treated with an ionised oxygen flow for periods range from
30 seconds to 3 minutes.
11. The method as claimed in Claim 3 wherein said first layer of spin-on-glass or layer of spin-on-glass to be coated is treated with an ionised oxygen flow preferably for a period of and around 120 seconds.
12. The method as claimed in any preceding Claim 8 to 11 wherein said ionised oxygen flow is preferably selected from an oxygen plasma treatment.
13. The method as claimed in Claim 1 wherein said second layer of spin-on-glass having a thickness of between 1 ,600 and 6,000 angstroms.
14. The method as claimed in Claim 1 wherein said the second layer of spin-on-glass preferably of a thickness of 3,500 angstroms.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MYPI20072057 MY142897A (en) | 2007-11-21 | 2007-11-21 | Method of curing defects in spin-on-glass |
| MYPI20072057 | 2007-11-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2009066983A2 true WO2009066983A2 (en) | 2009-05-28 |
| WO2009066983A3 WO2009066983A3 (en) | 2009-07-16 |
Family
ID=40668017
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/MY2008/000148 WO2009066983A2 (en) | 2007-11-21 | 2008-11-21 | Method of curing defects in spin-on-glass |
Country Status (2)
| Country | Link |
|---|---|
| MY (1) | MY142897A (en) |
| WO (1) | WO2009066983A2 (en) |
Family Cites Families (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0235756A (en) * | 1988-07-26 | 1990-02-06 | Matsushita Electric Ind Co Ltd | Manufacture of semiconductor device |
| JPH0372657A (en) * | 1989-08-11 | 1991-03-27 | Fuji Electric Co Ltd | Flattened surface film forming method |
| JP3096177B2 (en) * | 1992-10-23 | 2000-10-10 | 三菱電機株式会社 | Method for manufacturing semiconductor device |
-
2007
- 2007-11-21 MY MYPI20072057 patent/MY142897A/en unknown
-
2008
- 2008-11-21 WO PCT/MY2008/000148 patent/WO2009066983A2/en active Application Filing
Also Published As
| Publication number | Publication date |
|---|---|
| MY142897A (en) | 2011-01-31 |
| WO2009066983A3 (en) | 2009-07-16 |
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