WO2009066905A1 - Appareil oscillant à substrat pour un procédé thermique rapide - Google Patents

Appareil oscillant à substrat pour un procédé thermique rapide Download PDF

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Publication number
WO2009066905A1
WO2009066905A1 PCT/KR2008/006721 KR2008006721W WO2009066905A1 WO 2009066905 A1 WO2009066905 A1 WO 2009066905A1 KR 2008006721 W KR2008006721 W KR 2008006721W WO 2009066905 A1 WO2009066905 A1 WO 2009066905A1
Authority
WO
WIPO (PCT)
Prior art keywords
oscillation
substrate
cam
centering
oscillating apparatus
Prior art date
Application number
PCT/KR2008/006721
Other languages
English (en)
Inventor
Jang Woo Shim
Seung Yong Kim
Sang Seok Lee
Hyo Young Jeon
Original Assignee
Kornic Systems Corp.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Kornic Systems Corp. filed Critical Kornic Systems Corp.
Publication of WO2009066905A1 publication Critical patent/WO2009066905A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67115—Apparatus for thermal treatment mainly by radiation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68764—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a movable susceptor, stage or support, others than those only rotating on their own vertical axis, e.g. susceptors on a rotating caroussel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Definitions

  • the present invention relates to a substrate oscillating apparatus, and more particularly to a substrate oscillating apparatus that horizontally oscillates a substrate in all directions.
  • RTP rapid thermal processing
  • FIG. 1 is a view illustrating a substrate rotation type RTP device according to a conventional art.
  • the conventional RTP device comprises a plurality of heating lamps 10 mounted at an upper part of a substrate 20 relatively close to the substrate 20.
  • various types of arrangement have been suggested to uniformly heat the substrate 20, overlapping of emitted lights occurs and therefore heat overlapping sections are mostly generated on the substrate 20 as shown in the drawing in any type of the arrangement.
  • the present invention has been made in view of the above problems, and it is an object of the present invention to provide a substrate oscillating apparatus for a rapid thermal process (RTP), capable of solving the problem of nonuniform heating of a substrate, by oscillating the substrate horizontally in all directions.
  • RTP rapid thermal process
  • a substrate oscillating apparatus for a rapid thermal process comprising an oscillation motor of which rotational shafts comprise a lower center rotational shaft, an eccentric shaft, and an upper center rotational shaft, the lower and the upper center rotational shafts mounted on a central axis of the motor and the eccentric shaft mounted between the lower and the upper center rotational shafts to be deviated from the central axis; an elevating unit moving the oscillation motor up and down; an oscillation cam mounted to the eccentric cam; and an oscillation plate having an oscillation hole for inserting the oscillation cam therein, being finally connected to a substrate supporting unit.
  • RTP rapid thermal process
  • a bearing may be mounted between the oscillation cam and the eccentric shaft so that the oscillation cam can be rotated independently from the eccentric shaft.
  • the oscillation cam and the oscillation hole have a truncated cone shape which is narrowing upward.
  • the upper center rotational shaft may be mounted with a centering cam and, in this case, the oscillation plate may be formed with a centering hole extended upward from the oscillation hole to insert the centering cam therein.
  • the centering cam and the centering hole may both have an inverse truncated cone shape which is narrowing downward.
  • a bearing may be mounted between the centering cam and the upper center rotational shaft such that the centering cap can be rotated independently from the upper center rotational shaft.
  • the oscillation cam and the centering cam may be configured such that the centering cam is separated upward from the centering hole when the oscillation cam is moved up and inserted in the oscillation hole, and such that the oscillation cam is separated downward from the oscillation hole when the centering cam is moved down and inserted in the centering hole.
  • a horizontal free linear motion (LM) block may be mounted on the base support plate, and the oscillation plate may be placed on the horizontal free LM block to be horizontally moved.
  • the horizontal free LM block may comprises a lower LM guide constituted by a lower LM block placed on a lower LM rail; an upper LM guide constituted by an upper LM block placed on an upper LM rail; and a connector connecting the lower LM block of the lower LM guide with the upper LM block of the upper LM guide such that the lower LM block and the upper LM block are moved together.
  • a substrate can be heated uniformly since being horizontally rotated and also oscillated in all directions during a rapid thermal process (RTP).
  • RTP rapid thermal process
  • Fig. 1 is a view illustrating a substrate rotation type rapid thermal processing (RTP) device according to a conventional art
  • Fig. 2 is a concept view explaining the principle in that the substrate is uniformly heated by being oscillated horizontally in all directions as well as rotated horizontally;
  • FIG. 3 comparatively shows heat overlapping sections in a case where only horizontal rotation is performed with respect to the substrate, and heat overlapping sections in a case where both the horizontal rotation and all-directional horizontal oscillation are performed to the substrate;
  • FIG. 4 is a view illustrating a substrate oscillating apparatus for an RTP, according to an embodiment of the present invention
  • FIG. 5 to Fig. 8 are a view illustrating the operation processes of the substrate oscillating apparatus of Fig. 4;
  • FIG. 9 is a plan view of the substrate oscillating apparatus of Fig. 5 to Fig. 8;
  • FIG. 10 is a view showing a moving trace of an oscillation plate 140 shown in Fig. 5 to Fig. 8;
  • FIG. 11 is a view showing a 4-direction horizontal free linear motion (LM) block 130.
  • Fig. 12 is a view illustrating the structure where an oscillating unit is disposed in the center of the oscillation plate 140. Best Mode for Carrying Out the Invention
  • Fig. 2 is a concept view for explaining the principle in that the substrate is uniformly heated when the substrate is oscillated horizontally in all directions as well as rotated horizontally.
  • the heat overlapping section 15a of is generated in the annular form as shown in Fig. 2a.
  • overlapping of heat is relatively uniformly generated, thereby obtaining uniform heat overlapping sections 15b.
  • FIG. 3 comparatively shows the heat overlapping sections of a case where the substrate is horizontally rotated only and a case where the substrate is both rotated and oscillated in all directions.
  • the annular heat overlapping sections 15a are generated. Therefore, the oxide layer 17a is grown with ununiform thicknesses.
  • the heat overlapping sections 15b are relatively uniformly generated. Accordingly, the oxide layer 17b having uniform thickness can be grown.
  • FIG. 4 is a view for explaining a substrate oscillating apparatus for an RTP, according to an embodiment of the present invention.
  • a 4-direction horizontal free linear motion (LM) block 130 is mounted on a support base plate 120, and an oscillation plate 140 is placed on the 4-direction horizontal free linear motion (LM) block 130.
  • a substrate rotating unit 110 that horizontally rotates the substrate with respect to a shaft R3 is mounted on the oscillation plate 140.
  • the substrate rotating unit 110 is further connected to a substrate supporting unit (not shown) to rotate the substrate supporting unit, thereby horizontally rotating the substrate.
  • a multipole-magnetized magnet type substrate rotating apparatus disclosed in KR Patent No. 523674 (dated October 18, 2005) may be adopted.
  • a substrate rotating device using a maglev motor may also be adopted.
  • other various means such as a general motor, a servo motor, a step motor, and an air motor, can be applied as long as being capable of rotating the substrate.
  • An oscillation module comprises an elevating unit 101, an oscillation motor 102, an oscillation cam 105, and a centering cam 106.
  • the oscillation motor 102 is moved upward and downward by the elevating unit 101.
  • the oscillation plate 140 As the oscillation plate 140 is horizontally oscillated by the oscillation module, the overall substrate rotating unit 110 is accordingly oscillated in a horizontal position. Consequently, the substrate connected with the substrate rotating unit 110 is oscillated horizontally.
  • the present embodiment is structured in a manner that the substrate rotating unit 110 is mounted on the oscillation plate 140 and the substrate supporting unit is connected to the substrate rotating unit 110, in order to explain the process of the substrate being horizontally oscillated while horizontally rotated.
  • the substrate may be merely horizontally oscillated without being horizontally rotated and, in this case, the oscillation plate 140 is directly connected to the substrate supporting unit, omitting the substrate rotating unit 110 mounted on the oscillation plate 140.
  • the rotational shaft of the oscillation motor 102 comprises a lower center rotational shaft 103a, an eccentric shaft 103b, and an upper center rotational shaft 103c.
  • the eccentric shaft 103b is disposed between the lower center rotational shaft 103 a and the upper center rotational shaft 103c. While the lower and the upper center rotational shafts 103a and 103c are mounted on a central axis Rl of the oscillation motor 102, the eccentric shaft 103b is mounted on an eccentric line R2 a bit deviated from the central axis Rl.
  • the oscillation cam 105 is mounted to the eccentric shaft 103b, and the centering cam 106 is mounted to the upper center rotational shaft 103c.
  • a bearing 105a is mounted between the oscillation cam 105 and the eccentric shaft 103b so that the oscillation cam 105 is able to rotate independently from the eccentric shaft 103b.
  • another bearing 106a is mounted between the centering cam 106 and the upper center rotational shaft 103c so that the centering cam 106 is able to rotate independently from the upper center rotational shaft 103c.
  • the oscillation plate 140 includes an oscillation hole 305 for inserting the oscillation cam 105 therein and a centering hole 306 for inserting the centering cam 106 therein, which are vertically penetrating the oscillation plate 140.
  • the centering hole 306 and the oscillation hole 305 are interconnected.
  • the centering hole 306 is disposed at an upper position than the oscillation hole 305.
  • the oscillation cam 105 has a truncated cone shape which is narrowed toward the upper side.
  • the oscillation hole 305 also has the truncated cone shape so as to correspondingly insert the oscillation cam 105.
  • the centering cam 106 has an inverse truncated cone shape being narrowed toward the lower side.
  • the centering hole 306 also has the inverse truncated cone shape to correspondingly insert the centering cam 106 therein.
  • the oscillation cam 105 and the centering cam 106 are configured such that the centering cam 106 is separated upward from the centering hole 306 as the oscillation plate 105 is moved up and inserted in the oscillation hole 305. Also, as the centering cam 106 is moved down and inserted in the centering hole 306, the oscillation cam 105 is separated downward from the oscillation hole 305.
  • Fig. 5 to Fig. 8 are a view for explaining the operation process of the substrate oscillating apparatus for an RTP shown in Fig. 4.
  • the centering cam 106 is in the centering hole 306 as shown by in a part A in
  • the oscillation cam 105 is separated downward from the oscillation hole 306. During this, the substrate rotating unit 110 and the oscillation motor 102 are in operation.
  • the oscillation cam 105 Since being separated from the oscillation hole 305, the oscillation cam 105 cannot influence the operation of the oscillation plate 140. Also, the centering cam 106 is independently rotated from the upper center rotational shaft 103c due to the bearing 106a interposed between the upper center rotational shaft 103c and the centering cam 106. Therefore, the centering cam 106 as inserted in the centering hole 306 cannot influence the operation of the oscillation plate 140 in spite of rotation of the oscillation motor 102. Accordingly, in the state of Fig. 5, the substrate is only rotated horizontally by the substrate rotating unit 110.
  • both the oscillation cam 105 and the oscillation hole 305 have such a truncated cone shape narrowing upward, the upward movement of the oscillation cam 105 is finally restricted by an upper part of the oscillation hole 305.
  • an excessive pushing force may be exerted between the oscillation cam 105 and the oscillation plate 140.
  • a buffer member (not shown), being formed of an elastic material, may be further mounted to the elevating unit 101, more particularly, between the elevating unit 101 and the oscillation motor 102.
  • the centering cam 106 is inserted in the centering hole 306, and therefore the oscillation plate 140 is aligned to the central axis Rl of the motor.
  • the oscillation cam 105 is inserted in the oscillation hole 305 and therefore the oscillation plate 140 is aligned to the eccentric line R2.
  • the oscillation plate 140 is horizontally oscillated by an oscillating radius Tl.
  • the oscillating radius Tl corresponds to an interval between the central axis Rl and the eccentric line R2.
  • the elevating unit 101 is moved down as shown in Fig. 8. Accordingly, the centering cam 106 is inserted in the centering hole 306 whereas the oscillation cam 105 is separated downward from the oscillation hole 305. In this state, since the eccentric shaft 103b cannot influence the horizontal oscillation of the oscillation plate 140, the substrate finishes the oscillating operation and returns to the state of Fig. 5. In other words, as the centering cam 106 is inserted in the centering hole 306, the oscillation plate 140 that was deviated from the central axis Rl of the motor is corresponded to the central axis Rl again.
  • the substrate rotating unit 110 is not rotated because the RTP is completed. Since both the centering cam 106 and the centering hole 306 have the inverse truncated cone shape, the centering cam 106 can be restricted from excessively moving downward by a lower part of the centering hole 306.
  • a horizontal free moving distance of the oscillation plate 140 which horizontally oscillates is adjusted by a degree of eccentricity.
  • Fig. 9 is a plan view of the substrate oscillating apparatus of Fig. 5 to Fig. 8 seen from the above, and Fig. 10 is a view showing a moving trace of the oscillation plate 140 shown in Fig. 5 to Fig. 8.
  • Fig. 9a corresponds to Fig. 5
  • Fig. 9b corresponds to Fig. 6
  • Fig. 9d corresponds to Fig. 7 and a trace S3 in Fig. 10.
  • the oscillation plate 140 is oscillated sequentially along traces Sl, S2, S3 and S4.
  • the oscillation radius Tl of the oscillation plate 140 is preferably greater than intervals between the respective annular heat overlapping sections 15a shown in Fig. 2a, so as to effectively cover thermal voids among the heat overlapping sections 15a as shown in Fig. 2b.
  • Rotation of the oscillation motor 102 influences only the horizontal oscillation of the substrate not the horizontal rotation of the substrate.
  • the bearing 105a mounted between the oscillation cam 106 and the eccentric shaft 103b helps smooth sliding between the oscillation cam 106 and the oscillation plate 140.
  • Fig. 11 is a view showing a 4-direction horizontal free linear motion (LM) block 130.
  • Fig. 1 Ia is a sectional view
  • Fig. 1 Ib is a plan view
  • Fig. 1 Ic shows the moving trace of the 4-direction horizontal free LM block 130.
  • the 4-direction horizontal free LM block 130 comprises a pair of LM guides 131 and
  • the lower LM guide 131 is structured in a manner that a lower LM block 131b is placed on an upper part of a lower LM rail 131a.
  • the upper LM guide 133 is structured in a manner that an upper LM block 133b is placed on a lower part of an upper LM rail 133a.
  • the connector 132 is mounted between the lower LM block 131b of the lower LM guide and the upper LM block 133b of the upper LM guide 133 to fixedly connect the LM blocks 131b and 133b to each other, such that the LM blocks 131b and 133b can be moved together.
  • the oscillation plate 140 When the oscillation plate 140 is horizontally moved by the 4-direction horizontal free LM block 130 along a trace 135a, the oscillation plate 140 substantially performs a circular movement along an imaginary circular trace 135b. Accordingly, the oscillation plate 140 horizontally oscillates while moving along the imaginary circular trace 135b, as indicated by arrows 135c in Fig. 12c. Thus, the oscillation plate 140 is oscillated and rotated simultaneously and, as a consequence, the RTP can be more uniformly performed.
  • the oscillating unit according to the present invention may be mounted not only at a marginal part of the oscillation plate 140 but also almost in the middle of the oscillation plate 140 as shown in Fig. 12.

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Health & Medical Sciences (AREA)
  • Toxicology (AREA)

Abstract

La présente invention a trait à un appareil oscillant à substrat pour un procédé thermique rapide (RTP, rapid thermal process) qui fait osciller une plaque d'oscillation à l'aide d'un moteur d'oscillation déplacé verticalement par une unité élévatrice. Le moteur d'oscillation comprend un arbre de rotation centrale inférieur, un arbre à excentrique et un arbre de rotation centrale supérieur. Les arbres de rotation centrale inférieur et supérieur sont montés sur un axe central du moteur et l'arbre à excentrique est monté entre les arbres de rotation centrale inférieur et supérieur, lorsqu'il est dévié de l'axe central. Une came d'oscillation est montée sur la came à excentrique. La plaque d'oscillation est pourvue d'un trou d'oscillation permettant d'y insérer la came d'oscillation. Une portée d'arbre est montée entre la came d'oscillation et l'arbre à excentrique de manière à ce que la came d'oscillation puisse tourner indépendamment de l'arbre à excentrique. Par conséquent, le substrat peut être tourné et oscillé horizontalement de façon simultanée, ce qui permet d'améliorer l'uniformité de chauffage du substrat.
PCT/KR2008/006721 2007-11-22 2008-11-14 Appareil oscillant à substrat pour un procédé thermique rapide WO2009066905A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2007-0119829 2007-11-22
KR20070119829A KR100938358B1 (ko) 2007-11-22 2007-11-22 급속열처리용 기판요동장치

Publications (1)

Publication Number Publication Date
WO2009066905A1 true WO2009066905A1 (fr) 2009-05-28

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PCT/KR2008/006721 WO2009066905A1 (fr) 2007-11-22 2008-11-14 Appareil oscillant à substrat pour un procédé thermique rapide

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WO (1) WO2009066905A1 (fr)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9239192B2 (en) 2013-02-20 2016-01-19 Taiwan Semiconductor Manufacturing Co., Ltd. Substrate rapid thermal heating system and methods

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010031317A (ko) * 1997-10-24 2001-04-16 헬무트 좀머, 베르너 바이안트 회전 기판을 가진 빠른 열적 가공(ｒｔｐ) 장치
US6261373B1 (en) * 1999-03-18 2001-07-17 Primaxx, Inc. Method and apparatus for metal oxide chemical vapor deposition on a substrate surface
US20040132302A1 (en) * 2003-01-06 2004-07-08 Young-Kwean Choi Heat treating apparatus having rotatable heating unit

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20040033633A (ko) * 2002-10-15 2004-04-28 뉴영엠테크 주식회사 Ｒｔｐ 챔버의 웨이퍼 회전장치

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20010031317A (ko) * 1997-10-24 2001-04-16 헬무트 좀머, 베르너 바이안트 회전 기판을 가진 빠른 열적 가공(ｒｔｐ) 장치
US6261373B1 (en) * 1999-03-18 2001-07-17 Primaxx, Inc. Method and apparatus for metal oxide chemical vapor deposition on a substrate surface
US20040132302A1 (en) * 2003-01-06 2004-07-08 Young-Kwean Choi Heat treating apparatus having rotatable heating unit

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9239192B2 (en) 2013-02-20 2016-01-19 Taiwan Semiconductor Manufacturing Co., Ltd. Substrate rapid thermal heating system and methods

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KR100938358B1 (ko) 2010-01-22
KR20090053150A (ko) 2009-05-27

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