WO2009063825A1 - Appareil de traitement de tranche - Google Patents

Appareil de traitement de tranche Download PDF

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Publication number
WO2009063825A1
WO2009063825A1 PCT/JP2008/070404 JP2008070404W WO2009063825A1 WO 2009063825 A1 WO2009063825 A1 WO 2009063825A1 JP 2008070404 W JP2008070404 W JP 2008070404W WO 2009063825 A1 WO2009063825 A1 WO 2009063825A1
Authority
WO
WIPO (PCT)
Prior art keywords
section
wafer
processing apparatus
wafer processing
ultraviolet irradiation
Prior art date
Application number
PCT/JP2008/070404
Other languages
English (en)
Japanese (ja)
Inventor
Tasuku Shimizu
Tetsuya Hirano
Original Assignee
Tokyo Seimitsu Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Seimitsu Co., Ltd. filed Critical Tokyo Seimitsu Co., Ltd.
Publication of WO2009063825A1 publication Critical patent/WO2009063825A1/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67144—Apparatus for mounting on conductive members, e.g. leadframes or conductors on insulating substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67132—Apparatus for placing on an insulating substrate, e.g. tape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
    • H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
    • H01L21/67745—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber characterized by movements or sequence of movements of transfer devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H01L2221/68336—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding involving stretching of the auxiliary support post dicing

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Cleaning Or Drying Semiconductors (AREA)

Abstract

Un appareil de traitement de tranche (10) est doté d'une section de stockage (14), d'une section de refroidissement (16), d'une section d'expansion (18), d'une section de nettoyage (24), d'une section de rayonnement ultraviolet (26) et d'une section de transfert de tranche (28) à des positions prescrites sur un corps principal (12). La section de transfert de tranche (28) permet de réaliser le traitement requis à chaque section, tout en transférant une tranche (W) ayant un élément de cadre dans un ordre prescrit. Ainsi, l'appareil de traitement de tranche (10) réalise continûment et automatiquement le procédé d'expansion, le procédé de nettoyage et le procédé de rayonnement ultraviolet sur la tranche après le découpage en dés sans endommager une puce.
PCT/JP2008/070404 2007-11-16 2008-11-10 Appareil de traitement de tranche WO2009063825A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-298226 2007-11-16
JP2007298226 2007-11-16

Publications (1)

Publication Number Publication Date
WO2009063825A1 true WO2009063825A1 (fr) 2009-05-22

Family

ID=40638674

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/070404 WO2009063825A1 (fr) 2007-11-16 2008-11-10 Appareil de traitement de tranche

Country Status (1)

Country Link
WO (1) WO2009063825A1 (fr)

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2019008809A1 (fr) * 2017-07-03 2019-01-10 リンテック株式会社 Feuille adhésive pour découpage en dés furtifs, et procédé de production de dispositif à semi-conducteur
CN110753993A (zh) * 2017-07-03 2020-02-04 琳得科株式会社 隐形切割用粘着片及半导体装置的制造方法
CN110809815A (zh) * 2017-07-03 2020-02-18 琳得科株式会社 隐形切割用粘着片及半导体装置的制造方法
CN110832620A (zh) * 2017-07-03 2020-02-21 琳得科株式会社 隐形切割用粘着片及半导体装置的制造方法
JP2022133465A (ja) * 2018-01-11 2022-09-13 株式会社東京精密 ワーク分割装置及びワーク分割方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09266182A (ja) * 1996-03-29 1997-10-07 Nec Corp ダイシング装置およびその方法
JP2002299286A (ja) * 2001-04-02 2002-10-11 Tokyo Seimitsu Co Ltd Ｕｖ照射装置付ダイシング装置
JP2005136228A (ja) * 2003-10-30 2005-05-26 Canon Inc 半導体基板のダイシング方法
JP2006049591A (ja) * 2004-08-05 2006-02-16 Disco Abrasive Syst Ltd ウエーハに貼着された接着フィルムの破断方法および破断装置
JP2007201179A (ja) * 2006-01-26 2007-08-09 Tokyo Seimitsu Co Ltd ウェーハマウント装置及びウェーハマウント方法
JP2007250598A (ja) * 2006-03-14 2007-09-27 Renesas Technology Corp 半導体装置の製造方法

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09266182A (ja) * 1996-03-29 1997-10-07 Nec Corp ダイシング装置およびその方法
JP2002299286A (ja) * 2001-04-02 2002-10-11 Tokyo Seimitsu Co Ltd Ｕｖ照射装置付ダイシング装置
JP2005136228A (ja) * 2003-10-30 2005-05-26 Canon Inc 半導体基板のダイシング方法
JP2006049591A (ja) * 2004-08-05 2006-02-16 Disco Abrasive Syst Ltd ウエーハに貼着された接着フィルムの破断方法および破断装置
JP2007201179A (ja) * 2006-01-26 2007-08-09 Tokyo Seimitsu Co Ltd ウェーハマウント装置及びウェーハマウント方法
JP2007250598A (ja) * 2006-03-14 2007-09-27 Renesas Technology Corp 半導体装置の製造方法

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110753992B (zh) * 2017-07-03 2023-10-13 琳得科株式会社 隐形切割用粘着片及半导体装置的制造方法
TWI791485B (zh) * 2017-07-03 2023-02-11 日商琳得科股份有限公司 隱形切割用黏著片及半導體裝置的製造方法
CN110753992A (zh) * 2017-07-03 2020-02-04 琳得科株式会社 隐形切割用粘着片及半导体装置的制造方法
CN110809815A (zh) * 2017-07-03 2020-02-18 琳得科株式会社 隐形切割用粘着片及半导体装置的制造方法
CN110832620B (zh) * 2017-07-03 2024-01-02 琳得科株式会社 隐形切割用粘着片及半导体装置的制造方法
KR20200026178A (ko) * 2017-07-03 2020-03-10 린텍 가부시키가이샤 스텔스 다이싱용 점착 시트 및 반도체 장치의 제조 방법
CN110753993A (zh) * 2017-07-03 2020-02-04 琳得科株式会社 隐形切割用粘着片及半导体装置的制造方法
JPWO2019008809A1 (ja) * 2017-07-03 2020-04-30 リンテック株式会社 ステルスダイシング用粘着シートおよび半導体装置の製造方法
CN110832620A (zh) * 2017-07-03 2020-02-21 琳得科株式会社 隐形切割用粘着片及半导体装置的制造方法
KR102478993B1 (ko) * 2017-07-03 2022-12-19 린텍 가부시키가이샤 스텔스 다이싱용 점착 시트 및 반도체 장치의 제조 방법
JP7062654B2 (ja) 2017-07-03 2022-05-06 リンテック株式会社 ステルスダイシング用粘着シートおよび半導体装置の製造方法
CN110753993B (zh) * 2017-07-03 2023-12-01 琳得科株式会社 隐形切割用粘着片及半导体装置的制造方法
WO2019008809A1 (fr) * 2017-07-03 2019-01-10 リンテック株式会社 Feuille adhésive pour découpage en dés furtifs, et procédé de production de dispositif à semi-conducteur
CN110809815B (zh) * 2017-07-03 2023-10-20 琳得科株式会社 隐形切割用粘着片及半导体装置的制造方法
JP7284439B2 (ja) 2018-01-11 2023-05-31 株式会社東京精密 ワーク分割装置及びワーク分割方法
JP2022133465A (ja) * 2018-01-11 2022-09-13 株式会社東京精密 ワーク分割装置及びワーク分割方法

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