WO2009061670A3 - Support de pièce à usiner ayant des zones de fluide pour réguler la température - Google Patents

Support de pièce à usiner ayant des zones de fluide pour réguler la température Download PDF

Info

Publication number
WO2009061670A3
WO2009061670A3 PCT/US2008/081923 US2008081923W WO2009061670A3 WO 2009061670 A3 WO2009061670 A3 WO 2009061670A3 US 2008081923 W US2008081923 W US 2008081923W WO 2009061670 A3 WO2009061670 A3 WO 2009061670A3
Authority
WO
WIPO (PCT)
Prior art keywords
workpiece
workpiece support
fluid
fluid zones
temperature control
Prior art date
Application number
PCT/US2008/081923
Other languages
English (en)
Other versions
WO2009061670A2 (fr
Inventor
Martin L Zucker
Daniel J Devine
Vladimir Nagorny
Jonathan Mohn
Original Assignee
Mattson Tech Inc
Martin L Zucker
Daniel J Devine
Vladimir Nagorny
Jonathan Mohn
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mattson Tech Inc, Martin L Zucker, Daniel J Devine, Vladimir Nagorny, Jonathan Mohn filed Critical Mattson Tech Inc
Priority to JP2010533172A priority Critical patent/JP2011503877A/ja
Priority to CN2008801239031A priority patent/CN101911278A/zh
Priority to DE112008003029T priority patent/DE112008003029T5/de
Publication of WO2009061670A2 publication Critical patent/WO2009061670A2/fr
Publication of WO2009061670A3 publication Critical patent/WO2009061670A3/fr

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/541—Heating or cooling of the substrates
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/458—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for supporting substrates in the reaction chamber
    • C23C16/4582—Rigid and flat substrates, e.g. plates or discs
    • C23C16/4583—Rigid and flat substrates, e.g. plates or discs the substrate being supported substantially horizontally
    • C23C16/4586—Elements in the interior of the support, e.g. electrodes, heating or cooling devices
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27B—FURNACES, KILNS, OVENS, OR RETORTS IN GENERAL; OPEN SINTERING OR LIKE APPARATUS
    • F27B17/00—Furnaces of a kind not covered by any preceding group
    • F27B17/0016—Chamber type furnaces
    • F27B17/0025—Especially adapted for treating semiconductor wafers
    • F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
    • F27—FURNACES; KILNS; OVENS; RETORTS
    • F27D—DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS, IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KIND OF FURNACE
    • F27D5/00—Supports, screens, or the like for the charge within the furnace
    • F27D5/0037—Supports specially adapted for semi-conductors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring

Landscapes

  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • General Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Drying Of Semiconductors (AREA)
  • Jigs For Machine Tools (AREA)

Abstract

L'invention concerne un support de pièce à usiner définissant une surface de réception de pièce. Le support de pièce à usiner comprend une pluralité de zones de fluide. Un fluide, tel qu'un gaz, est acheminé vers les zones de fluide pour venir en contact avec la pièce à usiner sur le support de pièce. Le fluide peut présenter des caractéristiques de conductivité thermique sélectionnées permettant de réguler la température de la pièce à usiner au niveau d'emplacements particuliers. Conformément à la présente description, au moins certaines des zones de fluide sont situées dans des positions azimutales différentes. De cette manière, la température de la pièce à usiner peut être réglée non seulement dans une direction radiale mais également dans une direction angulaire.
PCT/US2008/081923 2007-11-07 2008-10-31 Support de pièce à usiner ayant des zones de fluide pour réguler la température WO2009061670A2 (fr)

Priority Applications (3)

Application Number Priority Date Filing Date Title
JP2010533172A JP2011503877A (ja) 2007-11-07 2008-10-31 温度制御のための流体ゾーンを備えるワークピース支持体
CN2008801239031A CN101911278A (zh) 2007-11-07 2008-10-31 具有用于温度控制的流体区域的工件支撑
DE112008003029T DE112008003029T5 (de) 2007-11-07 2008-10-31 Werkstückträger mit Fluidzonen zur Temperatursteuerung

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US11/936,576 US7972444B2 (en) 2007-11-07 2007-11-07 Workpiece support with fluid zones for temperature control
US11/936,576 2007-11-07

Publications (2)

Publication Number Publication Date
WO2009061670A2 WO2009061670A2 (fr) 2009-05-14
WO2009061670A3 true WO2009061670A3 (fr) 2009-08-20

Family

ID=40342254

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2008/081923 WO2009061670A2 (fr) 2007-11-07 2008-10-31 Support de pièce à usiner ayant des zones de fluide pour réguler la température

Country Status (6)

Country Link
US (1) US7972444B2 (fr)
JP (1) JP2011503877A (fr)
KR (1) KR20100108323A (fr)
CN (1) CN101911278A (fr)
DE (1) DE112008003029T5 (fr)
WO (1) WO2009061670A2 (fr)

Families Citing this family (38)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101003446B1 (ko) * 2006-03-07 2010-12-28 가부시키가이샤 히다치 고쿠사이 덴키 기판 처리 장치 및 기판 처리 방법
JP5171584B2 (ja) * 2008-03-26 2013-03-27 株式会社日立国際電気 基板処理装置の基板載置台、基板処理装置及び半導体デバイスの製造方法
KR101108337B1 (ko) * 2009-12-31 2012-01-25 주식회사 디엠에스 2단의 냉매 유로를 포함하는 정전척의 온도제어장치
JP5806300B2 (ja) * 2010-06-08 2015-11-10 アクセリス テクノロジーズ， インコーポレイテッド 加熱環状チャック
US8941968B2 (en) 2010-06-08 2015-01-27 Axcelis Technologies, Inc. Heated electrostatic chuck including mechanical clamp capability at high temperature
JP5597072B2 (ja) * 2010-09-07 2014-10-01 株式会社日本セラテック シャフトおよび支持装置
JP5787526B2 (ja) * 2011-01-17 2015-09-30 イビデン株式会社 電子部品位置決め用治具
US9623527B2 (en) * 2011-05-06 2017-04-18 Osram Opto Semiconductors Gmbh Component carrier assembly having a trench structure which separates component carrier regions, and method for producing a plurality of component carrier regions
US9719166B2 (en) 2011-06-21 2017-08-01 Spts Technologies Limited Method of supporting a workpiece during physical vapour deposition
GB201110476D0 (en) * 2011-06-21 2011-08-03 Spp Process Technology Systems Uk Ltd A method of supporting a workpiece during physical vapour deposition
US20130118609A1 (en) * 2011-11-12 2013-05-16 Thomas Neil Horsky Gas flow device
JP5973841B2 (ja) * 2012-08-22 2016-08-23 日本特殊陶業株式会社 静電チャックのガス制御装置およびガス制御方法
US9018022B2 (en) 2012-09-24 2015-04-28 Lam Research Corporation Showerhead electrode assembly in a capacitively coupled plasma processing apparatus
KR20140070049A (ko) * 2012-11-30 2014-06-10 삼성디스플레이 주식회사 기판 지지 유닛 및 이를 갖는 기판 처리 장치
US9681497B2 (en) * 2013-03-12 2017-06-13 Applied Materials, Inc. Multi zone heating and cooling ESC for plasma process chamber
US10332772B2 (en) 2013-03-13 2019-06-25 Applied Materials, Inc. Multi-zone heated ESC with independent edge zones
US20150060013A1 (en) * 2013-09-05 2015-03-05 Applied Materials, Inc. Tunable temperature controlled electrostatic chuck assembly
US9622375B2 (en) 2013-12-31 2017-04-11 Applied Materials, Inc. Electrostatic chuck with external flow adjustments for improved temperature distribution
US10006717B2 (en) 2014-03-07 2018-06-26 Taiwan Semiconductor Manufacturing Company, Ltd. Adaptive baking system and method of using the same
US9740111B2 (en) * 2014-05-16 2017-08-22 Applied Materials, Inc. Electrostatic carrier for handling substrates for processing
KR102163083B1 (ko) * 2014-07-02 2020-10-07 어플라이드 머티어리얼스, 인코포레이티드 홈 라우팅 광섬유 가열을 포함하는 온도 제어 장치, 기판 온도 제어 시스템들, 전자 디바이스 처리 시스템들 및 처리 방법들
US9613839B2 (en) * 2014-11-19 2017-04-04 Varian Semiconductor Equipment Associates, Inc. Control of workpiece temperature via backside gas flow
US10490429B2 (en) * 2014-11-26 2019-11-26 Applied Materials, Inc. Substrate carrier using a proportional thermal fluid delivery system
US20160217970A1 (en) * 2015-01-28 2016-07-28 Advanced Ion Beam Technology, Inc. Ion implanter and method for ion implantation
US10186437B2 (en) * 2015-10-05 2019-01-22 Lam Research Corporation Substrate holder having integrated temperature measurement electrical devices
WO2017116708A1 (fr) * 2015-12-30 2017-07-06 Mattson Technology, Inc. Caractéristiques permettant d'améliorer l'uniformité de processus dans un système de recuit milliseconde
US11837479B2 (en) * 2016-05-05 2023-12-05 Applied Materials, Inc. Advanced temperature control for wafer carrier in plasma processing chamber
US11043401B2 (en) * 2017-04-19 2021-06-22 Ngk Spark Plug Co., Ltd. Ceramic member
US20190080949A1 (en) * 2017-09-08 2019-03-14 Applied Materials, Inc. Soft chucking and dechucking for electrostatic chucking substrate supports
US11114326B2 (en) 2017-09-08 2021-09-07 Applied Materials, Inc. Substrate chucking and dechucking methods
EP3728686A4 (fr) * 2017-12-20 2021-09-29 Technetics Group LLC Systèmes de traitement de dépôt présentant une régulation de température active et procédés associés
CN116454003A (zh) * 2018-04-05 2023-07-18 朗姆研究公司 有冷却气体区域和相应槽及单极静电夹持电极模式的静电卡盘
CN110896045B (zh) 2018-09-12 2022-12-30 中微半导体设备(上海)股份有限公司 一种升举顶针组件，静电夹盘及其所在的处理装置
JP7234549B2 (ja) * 2018-09-12 2023-03-08 東京エレクトロン株式会社 真空搬送モジュール及び真空搬送方法
WO2021108770A1 (fr) * 2019-11-27 2021-06-03 The Texas A & M University System Systèmes de nano-positionnement et procédés associés
US20210351021A1 (en) * 2020-05-08 2021-11-11 Applied Materials, Inc. Methods and apparatus for processing a substrate
US20220223425A1 (en) * 2021-01-08 2022-07-14 Taiwan Semiconductor Manufacturing Co., Ltd. By-site-compensated etch back for local planarization/topography adjustment
US11981989B2 (en) 2021-06-03 2024-05-14 Applied Materials, Inc. Automated temperature controlled substrate support

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4565601A (en) * 1983-09-12 1986-01-21 Hitachi, Ltd. Method and apparatus for controlling sample temperature
US5350479A (en) * 1992-12-02 1994-09-27 Applied Materials, Inc. Electrostatic chuck for high power plasma processing
EP0803904A2 (fr) * 1996-04-25 1997-10-29 Applied Materials, Inc. Support de substrat
US20040212947A1 (en) * 2003-04-22 2004-10-28 Applied Materials, Inc. Substrate support having heat transfer system

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6378975A (ja) 1986-09-22 1988-04-09 江頭　正 電柱等建造物における貼り紙防止方法
JP2680338B2 (ja) 1988-03-31 1997-11-19 株式会社東芝 静電チャック装置
US5360479A (en) * 1990-07-02 1994-11-01 General Electric Company Isotopically pure single crystal epitaxial diamond films and their preparation
TW277139B (fr) * 1993-09-16 1996-06-01 Hitachi Seisakusyo Kk
US5609720A (en) * 1995-09-29 1997-03-11 Lam Research Corporation Thermal control of semiconductor wafer during reactive ion etching
JP3296292B2 (ja) * 1998-06-26 2002-06-24 松下電器産業株式会社 エッチング方法、クリーニング方法、及びプラズマ処理装置
US6159299A (en) * 1999-02-09 2000-12-12 Applied Materials, Inc. Wafer pedestal with a purge ring
US6320736B1 (en) * 1999-05-17 2001-11-20 Applied Materials, Inc. Chuck having pressurized zones of heat transfer gas
US6740853B1 (en) * 1999-09-29 2004-05-25 Tokyo Electron Limited Multi-zone resistance heater
JP3834466B2 (ja) * 2000-10-30 2006-10-18 株式会社日立製作所 半導体製造装置の制御方法
JP2005166354A (ja) * 2003-12-01 2005-06-23 Ngk Insulators Ltd セラミックヒーター
JP4595431B2 (ja) * 2004-08-03 2010-12-08 凸版印刷株式会社 ドライエッチング方法及びドライエッチング装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4565601A (en) * 1983-09-12 1986-01-21 Hitachi, Ltd. Method and apparatus for controlling sample temperature
US5350479A (en) * 1992-12-02 1994-09-27 Applied Materials, Inc. Electrostatic chuck for high power plasma processing
EP0803904A2 (fr) * 1996-04-25 1997-10-29 Applied Materials, Inc. Support de substrat
US20040212947A1 (en) * 2003-04-22 2004-10-28 Applied Materials, Inc. Substrate support having heat transfer system

Also Published As

Publication number Publication date
KR20100108323A (ko) 2010-10-06
US7972444B2 (en) 2011-07-05
JP2011503877A (ja) 2011-01-27
CN101911278A (zh) 2010-12-08
DE112008003029T5 (de) 2010-09-23
US20090114158A1 (en) 2009-05-07
WO2009061670A2 (fr) 2009-05-14

Similar Documents

Publication Publication Date Title
WO2009061670A3 (fr) Support de pièce à usiner ayant des zones de fluide pour réguler la température
TW200940736A (en) Workpiece support with fluid zones for temperature control
WO2012115907A3 (fr) Jonc de bordure destiné à une chambre de traitement thermique
WO2007021692A3 (fr) Procédé et dispositif de contrôle des caractéristiques de déposition d'une pellicule semi-conductrice
SG126908A1 (en) Oven for controlled heating of compounds at varying temperatures
WO2009145828A3 (fr) Systèmes et procédés d'enzyme polymérase à deux étapes lentes
WO2013180822A3 (fr) Système de forage, mécanisme de rappel et procédé permettant un forage directionnel d'un trou de forage
WO2009131310A3 (fr) Film dur multicouche pour plaquette amovible
WO2010033805A3 (fr) Systèmes et procédés pour usiner des matériaux
WO2009006151A3 (fr) Réseaux d'éléments inductifs permettant de réduire au minimum une absence d'uniformité radiale dans un plasma
WO2007123763A3 (fr) Articles comprenant des molécules localisées disposées à leur surface et leurs procédés de production
WO2008106613A3 (fr) Appareil de chromatographie en phase liquide ayant des composants titane liés par diffusion
WO2006127946A3 (fr) Revetements multifonctionnels deposes sur des substrats microporeux
WO2008023027A3 (fr) Méthode de fabrication de comprimés de pramipexole dihydrochlorure
NZ590558A (en) 5-alkynyl-pyrimidines
WO2013016282A3 (fr) Poursuite de chemin pour forage directionnel appliquée au maintien d'attitude et au suivi de trajectoire
WO2009115161A8 (fr) Ferrure
WO2011090905A3 (fr) Robot de transfert ayant refroidissement de substrat
WO2008125353A3 (fr) Machine de traitement pour un traitement de désassemblage et d'assemblage
WO2008117781A1 (fr) Appareil de production de film par dépôt chimique en phase vapeur (cvd)
TW200712241A (en) Substrate carrier
WO2011037418A3 (fr) Dispositif de soudage pour carrosserie automobile
WO2009069464A1 (fr) Matériau pour panneau de cuisine, procédé de fabrication d'un matériau pour panneau de cuisine et panneau de cuisine
EP4261876A4 (fr) Unité de substrat dotée de support, unité de substrat et procédé de fabrication d'unité de substrat dotée de support
WO2013037808A3 (fr) Machine-outil pour usiner une pièce, chaîne de fabrication équipée d'une telle machine-outil et procédé pour faire fonctionner une telle chaîne de fabrication

Legal Events

Date Code Title Description
WWE Wipo information: entry into national phase

Ref document number: 200880123903.1

Country of ref document: CN

121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08848338

Country of ref document: EP

Kind code of ref document: A2

ENP Entry into the national phase

Ref document number: 20107010037

Country of ref document: KR

Kind code of ref document: A

WWE Wipo information: entry into national phase

Ref document number: 2010533172

Country of ref document: JP

RET De translation (de og part 6b)

Ref document number: 112008003029

Country of ref document: DE

Date of ref document: 20100923

Kind code of ref document: P

122 Ep: pct application non-entry in european phase

Ref document number: 08848338

Country of ref document: EP

Kind code of ref document: A2