WO2009060264A1 - Circuit intégré comportant des circuits de terminaison d'harmonique - Google Patents

Circuit intégré comportant des circuits de terminaison d'harmonique Download PDF

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Publication number
WO2009060264A1
WO2009060264A1 PCT/IB2007/055383 IB2007055383W WO2009060264A1 WO 2009060264 A1 WO2009060264 A1 WO 2009060264A1 IB 2007055383 W IB2007055383 W IB 2007055383W WO 2009060264 A1 WO2009060264 A1 WO 2009060264A1
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WO
WIPO (PCT)
Prior art keywords
harmonic
impedance
circuitry
resonant circuit
semiconductor device
Prior art date
Application number
PCT/IB2007/055383
Other languages
English (en)
Inventor
Cedric Cassan
Michael Watts
Original Assignee
Freescale Semiconductor, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Freescale Semiconductor, Inc. filed Critical Freescale Semiconductor, Inc.
Priority to PCT/IB2007/055383 priority Critical patent/WO2009060264A1/fr
Publication of WO2009060264A1 publication Critical patent/WO2009060264A1/fr

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
    • H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
    • H03F3/217—Class D power amplifiers; Switching amplifiers
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
    • H03F1/56—Modifications of input or output impedances, not otherwise provided for
    • H03F1/565—Modifications of input or output impedances, not otherwise provided for using inductive elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/189—High-frequency amplifiers, e.g. radio frequency amplifiers
    • H03F3/19—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only
    • H03F3/195—High-frequency amplifiers, e.g. radio frequency amplifiers with semiconductor devices only in integrated circuits
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
    • H03F3/60—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators
    • H03F3/601—Amplifiers in which coupling networks have distributed constants, e.g. with waveguide resonators using FET's, e.g. GaAs FET's
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H7/00—Multiple-port networks comprising only passive electrical elements as network components
    • H03H7/38—Impedance-matching networks
    • H03H7/383—Impedance-matching networks comprising distributed impedance elements together with lumped impedance elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/387—A circuit being added at the output of an amplifier to adapt the output impedance of the amplifier
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/391—Indexing scheme relating to amplifiers the output circuit of an amplifying stage comprising an LC-network
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/402—A series resonance being added in shunt in the output circuit, e.g. base, gate, of an amplifier stage
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/423—Amplifier output adaptation especially for transmission line coupling purposes, e.g. impedance adaptation
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03F—AMPLIFIERS
    • H03F2200/00—Indexing scheme relating to amplifiers
    • H03F2200/451—Indexing scheme relating to amplifiers the amplifier being a radio frequency amplifier

Definitions

  • the field of the invention generally relates generally to power amplifiers having harmonic termination circuitry.
  • embodiments of the invention relate to improved on-chip harmonic terminations for class 'F' power amplifiers.
  • manufacturers of power amplifiers (PA's), and communication units arranged to use power amplifiers are constantly aiming to design high efficiency topologies capable of providing high performances within the saturation region of class 'F' power amplifiers. This is of particular importance within existing Gaussian Minimum Shift Keying (GMSK) modulation-based communication systems and associated wireless communication units, such as Global System for Mobile (GSM) communications telephone handsets and the like.
  • GMSK Gaussian Minimum Shift Keying
  • Harmonic termination is a well-known theory to improve radio frequency (RF) Power Amplifier (PA) efficiency. This theory describes idealised operating conditions that designers aim to achieve in practical RF PA circuits. Many circuit topologies have been proposed in numerous technical papers to overcome the known design problem to be as close as possible to the theoretical harmonic impedances by minimizing parasitic effects and dependency of external environment.
  • PAICs power amplifier integrated circuits
  • the wireless communication unit manufacturers often re-design the input and output matching networks of their transmitter to accommodate their particular systems.
  • harmonic matched RF power amplifier it is necessary to have the harmonic termination inside the PAIC, as this allows the harmonic terminations to be more effective as they are closer to the active device.
  • PAIC power amplifier integrated circuits
  • FIG. 1 illustrates a known topology 100 of an on-chip harmonic termination for a class 'F' power amplifier.
  • the power amplifier design comprises an active component in a form of a transistor 105.
  • a second harmonic resonant circuit 110 is coupled between the drain of the transistor 105 and ground.
  • the second harmonic resonant circuit 110 comprises inductance 115 coupled in series with capacitance 120.
  • a third harmonic resonant circuit 130 is coupled in series between the drain of the transistor 105 and an output 150 of the amplifier.
  • the third harmonic resonant circuit 130 comprises inductance 135 coupled in parallel with capacitance 140.
  • the second harmonic resonant circuit 110 acts as a band-pass filter having substantially zero impedance at a resonant frequency of the circuit, namely at the second harmonic frequency.
  • the third harmonic resonant circuit 130 acts as a band-stop filter having substantially infinite impedance at the resonant frequency of the circuit, namely at the third harmonic frequency.
  • FIG. 2 illustrates a known problem that designers face when implementing the topology of FIG. 1..
  • This known topology relies on the fact that the series inductance 135 of the third harmonic resonant circuit 130 has to be as lossless as possible.
  • a relatively simple way to make a low loss inductance is to use a wire bond.
  • transmission lines have to be added on each side of the series, parallel capacitance 140 of the third harmonic resonant circuit 130 to connect the two wire bond pads of the series wire.
  • the resulting third harmonic circuit is no longer resonant at the desired frequency, due to the presence of the transmission lines 205.
  • an integrated circuit comprising harmonic termination circuitry, and a communication unit comprising such an integrated circuit, as defined in the appended Claims.
  • FIG. 1 and FIG. 2 illustrate a known topology and implementation of an on-chip harmonic termination for a class 'F' power amplifier.
  • FIG. 3 illustrates harmonic termination circuitry, adapted in accordance with an embodiment of the invention
  • FIG. 4 illustrates a more detailed description of the harmonic termination circuitry of FIG. 3.
  • FIG. 5 illustrates an example of an implementation of the harmonic termination circuitry of FIG. 4.
  • FIG. 6 illustrates a Smith Chart representation highlighting advantages resulting from employing embodiments of the invention.
  • FIG. 7 illustrates a semiconductor device, adapted in accordance with an embodiment of the invention. - A -
  • FIG. 8 illustrates a graph showing power added efficiency performance versus input power of conventional class 'F' power amplifier provided with both known termination circuitry and harmonic termination circuitry in accordance with the embodiment of the invention illustrated in FIGs. 3 to 5.
  • Embodiments of the invention will be described in terms of an on-chip class 'F' radio frequency (RF) power amplifier and harmonic termination circuitry therefor.
  • RF radio frequency
  • inventive concept herein described may be embodied in any type of amplifier design in which harmonic termination is required.
  • inventive concept described herein may equally be applied to power amplifier and harmonic termination circuitry not provided 'on-chip'.
  • Harmonic termination circuitry for providing harmonic termination on an output path of an active component of an amplifier circuit in an attempt to provide a particular level of performance, irrespective of the external matching, harmonic termination circuitry comprising a third harmonic resonant circuit coupling the output path of an active component to ground,
  • the harmonic termination circuitry is arranged to provide an impedance representative of a short circuit between the output path and ground at a third harmonic frequency.
  • the harmonic termination circuitry further comprises impedance transformer circuitry, provided in series located between the output of the active component and the third harmonic resonant circuit.
  • the impedance transformer circuitry is arranged to transform a zero impedance, provided by the third harmonic resonant circuit at the third harmonic frequency, into an infinite impedance at the third harmonic frequency, as perceived at the output of the active component. It will be apparent that the term 'infinite impedance' is to be construed as an impedance which in the specific implementation can be considered as being infinite.
  • the harmonic termination circuitry 300 provides harmonic termination on an output path 310 from an output 320 of an active component 305 of an amplifier circuit (not shown).
  • the harmonic termination circuitry 300 comprises a second harmonic resonant circuit 330, coupled between the output 320 of the active component 305 and ground, and arranged to provide an impedance substantially representative of a short circuit between the output 320 of the active component 305 and ground at a second harmonic frequency.
  • the harmonic termination circuitry 300 further comprises a third harmonic resonant circuit 340, coupled between the output path 310 and ground, and arranged to provide an impedance substantially representative of a short circuit between the output path 310 and ground at a third harmonic frequency.
  • the harmonic circuitry 300 further comprises impedance transformer circuitry 350, provided in series along the output path 310 between the output 320 of the active component 305 and the third harmonic resonant circuit 340, the impedance transformer circuitry 350 is arranged to transform a substantially zero impedance, provided by the third harmonic resonant circuit 340 at the third harmonic frequency, into a substantially infinite impedance at the third harmonic frequency, as perceived by the output 320 of the active component 305.
  • PAICs power amplifier integrated circuits
  • harmonic termination circuitry 400 provides harmonic termination on an output path 410 from an output of an active component of an amplifier circuit.
  • the active component is shown as an equivalent circuit 405 of a microwave transistor for ease of explanation and drain 420 of the microwave transistor 405 provides the output of the active component.
  • the harmonic termination circuitry 400 comprises a second harmonic resonant circuit 430, coupled between the drain 420 of the microwave transistor 405 and ground.
  • the second harmonic resonant circuit 430 comprises an inductance 435 and a capacitance 437 in series, and arranged to provide an impedance substantially representative of a short circuit between the drain 420 of the microwave transistor 405 and ground at a second harmonic frequency.
  • the harmonic termination circuitry 400 further comprises a third harmonic resonant circuit 440, coupled between the output path 410 and ground.
  • the third harmonic resonant circuit 440 comprises an inductance 445 and a capacitance 447 in series, and arranged to provide an impedance substantially representative of a short circuit between the output path 410 and ground at a third harmonic frequency.
  • the harmonic termination circuitry 400 still further comprises impedance transformer circuitry 460, provided in series along the output path 410 between the drain 420 of the microwave transistor 405 and the third harmonic resonant circuit 440.
  • the impedance transformer circuitry 460 is represented as a combination of shunt capacitor Cds, series inductance 450 and series LC circuit
  • the impedance inverter is based on the quarter wave length line effect, as described below. It is envisaged that the impedance inverter may be realized using lumped series inductances and lumped shunt capacitances put in series (discrete components or fully integrated lumped elements). It is also envisaged, for example, that the impedance inverter may be realized using a transmission line which length equals a quarter wave at the desired third harmonic frequency. It is further envisaged, for example, that the impedance inverter may be realized using a wire bond to perform the series inductance role combined with shunt capacitors. It is also envisaged, for example, that the shunt capacitors may be lumped components (added inside the package) or existing capacitors (Cds of the active device and/or capacitor of the second harmonic termination circuit 430).
  • standing waves at resonant frequency points of a short- circuited transmission line produce certain effects, in particular when the frequency is such that exactly a quarter wavelength, or some multiple thereof, matches the length of the transmission line. More particularly, when the frequency is such that a quarter wavelength, or some odd multiple thereof, matches the length of the transmission line, the transmission line acts as an impedance transformer, transforming an infinite impedance into zero impedance and vice versa.
  • the transmission line acts as an impedance transformer, transforming an infinite impedance into zero impedance and vice versa.
  • the third harmonic resonant circuit 440 is arranged to provide an impedance substantially representative of a short circuit between the output path 410 and ground at a third harmonic frequency.
  • the impedance transformer circuitry 460 is arranged to transform a substantially zero impedance, provided by the third harmonic resonant circuit 440 at the third harmonic frequency, into a substantially infinite impedance at the third harmonic frequency, as perceived by the drain 420 of the microwave transistor 405. Accordingly, the output path 410 between the drain 420 and the third harmonic resonant circuit 440 is required to act as a transmission line comprising a length substantially equal to a quarter wavelength of the desired frequency, namely the third harmonic frequency, or odd multiple thereof.
  • the series inductance (450) of the impedance transformer circuitry (460), The Cds of the active device (405), the inductance (435) and capacitance (437) value of the second harmonic termination (430) are arranged to substantially match the impedance of the output path 410, between the drain 420 and the third harmonic resonant circuit 440, to that of a transmission line comprising a length substantially equal to a quarter, or odd multiple thereof, of the third harmonic frequency wavelength.
  • FIG. 5 there is illustrated an example of an implementation 500 of the harmonic termination circuitry 400 of FIG. 4, where the harmonic termination circuitry forms a part of a power amplifier integrated circuit (not shown).
  • the second and third harmonic resonant circuits 430, 440 are integrated on a die comprising a high resistivity type of substrate, such as gallium arsenide (GaAs) or high resistivity silicon.
  • the drain 420 of the microwave transistor 405 and the second harmonic resonant circuit 430 are coupled to a first contact pad 510, and the third harmonic resonant circuit 440 is coupled to a second contact pad 520.
  • the first and second contact pads 510, 520 may be made of any suitable material, for example gold.
  • the impedance transformer circuitry which includes a series inductance 450, comprises a wire bond, the ends of which are attached to the first and second contact pads 510, 520, for example by way of ball bonding or wedge bonding.
  • the wire bond may comprise any suitable material, for example gold.
  • the second contact pad 520 is further coupled to a package lead of the power amplifier integrated circuit.
  • only the wire bond couples the output of the radio frequency power amplifier to one end of the third harmonic termination circuitry, thereby facilitating more accurate design to ensure the impedance transformation represents an infinite impedance at an power amplifier and a zero impedance at the third harmonic termination circuitry.
  • the Smith Chart representation 600 illustrates the third harmonic impedance, as perceived by the drain of a microwave transistor when the impedance at the third harmonic frequency is varied outside the package, for example due to variations in external tuning, where the output path is provided with known harmonic termination circuitry in Smith Charge 610 and where the output path is provided with harmonic termination circuitry according to the embodiment illustrated in FIG's. 3 to 5 in Smith Chart 620.
  • the third harmonic impedance at a frequency of 2.82 GHz is less sensitive, as perceived by the drain of the microwave transistor, when provided with harmonic termination circuitry according to the embodiment illustrated in FIGs. 3 to 5, as compared to the prior art harmonic termination circuitry throughout the impedance variation range at this frequency.
  • the real part of the third harmonic impedance variation for the prior art harmonic termination circuitry is five times greater than that for the harmonic termination circuitry according to the embodiment illustrated in FIGs. 3 to 5.
  • FIG. 7 there is illustrated a semiconductor device 700, for example a power amplifier integrated circuit, comprising a power amplifier 705 and harmonic termination circuitry 710 according to an embodiment of the invention. Also illustrated in FIG. 7 are input and output matching networks 720, 730.
  • the harmonic termination circuitry 710 may be integrated on the same die as the power amplifier 705, of which the active component forms a part, where the die may comprise a high resistivity substrate.
  • This integration allows for the second harmonic resonant circuit of the harmonic termination circuitry 710 to be connected substantially directly to the drain output of the active component of the power amplifier 705, substantially without a need for additional elements to be provided there between. In this manner, the short circuit effect at the second harmonic frequency may be substantially maximised.
  • monolithic integrated circuit approach allows for impedance transformer circuitry, for example a wire bond, to be bonded on the die, thereby minimising assembly variations.
  • the cost of such an approach is advantageously low compared to multi die techniques.
  • FIG. 8 there is illustrated a graph 800 showing power added efficiency (PAE) performance 810 versus input power (Pin) 805 for conventional class 'F' (CCF) power amplifiers provided with harmonic termination circuitry.
  • the graph 800 illustrates a performance of known harmonic termination circuitry 820 with a performance of harmonic termination circuitry 815 according to embodiments of the invention.
  • the dispersion of PAE in the saturation region is over five times less for the CCF with harmonic termination circuitry in accordance with the embodiment of the invention 815 than for the CCF with the prior art harmonic termination circuitry 820.
  • the absolute PAE value is advantageously higher.
  • the integrated circuit with improved harmonic termination circuitry aims to provide at least one or more of the following advantages:
  • the harmonic termination circuitry impedance is independent of any external tuning at the second and third harmonic frequency.
  • a Quarter-wave length line is easily realized with a wire bond, in a very simple manner, which is an easy assembly technique to introduce during manufacturing.
  • the two series LC resonant circuits can be easily integrated in a die. This is a key advantage for monolithic RF PA IC components (with a high 'Q' cap IC process) and provides good reproducibility due to a low dispersion of component values (compared to discrete parts).
  • the harmonic termination circuitry is independent of the external environment, higher PAE performances can be achieved with low dispersion. This technique will thus, improve a yield performance from a manufacturability point of view.
  • aspects of the invention may be implemented in any suitable form including hardware, software, firmware or any combination of these.
  • the elements and components of an embodiment of the invention may be physically, functionally and logically implemented in any suitable way. Indeed, the functionality may be implemented in a single unit or IC, in a plurality of units or ICs or as part of other functional units.
  • inventive concept can be applied by a semiconductor manufacturer to any integrated circuit comprising a power amplifier requiring harmonic termination. It is further envisaged that, for example, a semiconductor manufacturer may employ the inventive concept in a design of a stand-alone device or application-specific integrated circuit (ASIC) and/or any other sub-system element.
  • ASIC application-specific integrated circuit

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  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Amplifiers (AREA)

Abstract

La présente invention concerne un dispositif à semi-conducteur qui comprend des circuits de terminaison d'harmonique (300) destinés à fournir une terminaison d'harmonique sur un trajet de sortie (310) à partir d'une sortie (320) d'un composant actif (305) d'un circuit amplificateur, les circuits de terminaison d'harmonique (300) comprenant un circuit résonnant d'harmonique de rang 3 (340). Le circuit résonnant d'harmonique de rang 3 (340) couple sensiblement le trajet de sortie (310) à la terre, et est agencé pour fournir une impédance sensiblement représentative d'un court-circuit entre le trajet de sortie (310) et la terre à une fréquence d'harmonique de rang 3. Les circuits de terminaison d'harmonique (300) comprennent en outre des circuits de transformateur d'impédance (350) disposés en série le long du trajet de sortie (310) entre la sortie (320) du composant actif (305) et le circuit résonnant d'harmonique de rang 3 (340), les circuits de transformateur d'impédance (350) étant agencés pour transformer une impédance nulle, fournie par le circuit résonnant d'harmonique de rang 3 (340) à la fréquence d'harmonique de rang 3, en une impédance infinie à la fréquence d'harmonique de rang 3, telle qu'elle est perçue par la sortie (320) du composant actif (305).
PCT/IB2007/055383 2007-11-08 2007-11-08 Circuit intégré comportant des circuits de terminaison d'harmonique WO2009060264A1 (fr)

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Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101882910A (zh) * 2010-04-30 2010-11-10 苏州英诺迅科技有限公司 提高功放功率附加效率和线性度的输出匹配电路
CN101888212A (zh) * 2010-04-30 2010-11-17 苏州英诺迅科技有限公司 提高功率放大器线性度及功率附加效率的电路结构
WO2010134858A1 (fr) * 2009-05-18 2010-11-25 Telefonaktiebolaget L M Ericsson (Publ) Appareil de commande d'harmoniques
EP2634918A3 (fr) * 2012-02-29 2015-04-22 Fujitsu Limited Amplificateur
WO2016057218A1 (fr) * 2014-10-09 2016-04-14 Cavendish Kinetics, Inc Circuit d'adaptation d'amplificateur de puissance avec dvc
US9531328B2 (en) 2014-12-16 2016-12-27 Nxp Usa, Inc. Amplifiers with a short phase path, packaged RF devices for use therein, and methods of manufacture thereof
WO2017105732A1 (fr) * 2015-12-14 2017-06-22 Qualcomm Incorporated Amplificateur de classe e2
CN108075736A (zh) * 2016-11-16 2018-05-25 恩智浦美国有限公司 阻抗匹配电路
US10214425B2 (en) 2012-07-11 2019-02-26 Kazuhiro Nagata Method for producing silicon using microwave, and microwave reduction furnace
CN109450388A (zh) * 2018-12-26 2019-03-08 东莞理工学院 改善谐波性能的宽带匹配电路及功率放大器
US10541653B2 (en) 2018-05-18 2020-01-21 Nxp Usa, Inc. Broadband power transistor devices and amplifiers with input-side harmonic termination circuits and methods of manufacture
US10673387B2 (en) 2017-12-05 2020-06-02 Nxp Usa, Inc. Amplifiers with in-package radial stub harmonic traps
US10742178B2 (en) 2018-05-18 2020-08-11 Nxp Usa, Inc. Broadband power transistor devices and amplifiers and methods of manufacture thereof
US11463055B2 (en) 2019-12-05 2022-10-04 Nxp Usa, Inc. Amplifiers and manufacture method thereof

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Cited By (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010134858A1 (fr) * 2009-05-18 2010-11-25 Telefonaktiebolaget L M Ericsson (Publ) Appareil de commande d'harmoniques
US9203361B2 (en) 2009-05-18 2015-12-01 Telefonaktiebolaget L M Ericsson (Publ) Harmonic control apparatus and related radio frequency devices and base stations
CN101882910A (zh) * 2010-04-30 2010-11-10 苏州英诺迅科技有限公司 提高功放功率附加效率和线性度的输出匹配电路
CN101888212A (zh) * 2010-04-30 2010-11-17 苏州英诺迅科技有限公司 提高功率放大器线性度及功率附加效率的电路结构
CN101888212B (zh) * 2010-04-30 2012-10-31 苏州英诺迅科技有限公司 提高功率放大器线性度及功率附加效率的电路结构
EP2634918A3 (fr) * 2012-02-29 2015-04-22 Fujitsu Limited Amplificateur
EP3059859A3 (fr) * 2012-02-29 2016-11-02 Fujitsu Limited Amplificateur
US10214425B2 (en) 2012-07-11 2019-02-26 Kazuhiro Nagata Method for producing silicon using microwave, and microwave reduction furnace
US10038415B2 (en) 2014-10-09 2018-07-31 Cavendish Kinetics, Inc. Power amplifier matching circuit with DVCs
WO2016057218A1 (fr) * 2014-10-09 2016-04-14 Cavendish Kinetics, Inc Circuit d'adaptation d'amplificateur de puissance avec dvc
US9531328B2 (en) 2014-12-16 2016-12-27 Nxp Usa, Inc. Amplifiers with a short phase path, packaged RF devices for use therein, and methods of manufacture thereof
WO2017105732A1 (fr) * 2015-12-14 2017-06-22 Qualcomm Incorporated Amplificateur de classe e2
US9929704B2 (en) 2015-12-14 2018-03-27 Qualcomm Incorporated Class E2 amplifier
CN108370240A (zh) * 2015-12-14 2018-08-03 高通股份有限公司 E2类放大器
CN108370240B (zh) * 2015-12-14 2021-11-12 高通股份有限公司 E2类放大器
TWI685191B (zh) * 2015-12-14 2020-02-11 美商高通公司 E2類放大器
CN108075736A (zh) * 2016-11-16 2018-05-25 恩智浦美国有限公司 阻抗匹配电路
CN108075736B (zh) * 2016-11-16 2023-07-14 恩智浦美国有限公司 阻抗匹配电路
US10673387B2 (en) 2017-12-05 2020-06-02 Nxp Usa, Inc. Amplifiers with in-package radial stub harmonic traps
US10673386B2 (en) 2017-12-05 2020-06-02 Nxp Usa, Inc. Wideband power amplifiers with harmonic traps
US10742178B2 (en) 2018-05-18 2020-08-11 Nxp Usa, Inc. Broadband power transistor devices and amplifiers and methods of manufacture thereof
US10541653B2 (en) 2018-05-18 2020-01-21 Nxp Usa, Inc. Broadband power transistor devices and amplifiers with input-side harmonic termination circuits and methods of manufacture
CN109450388A (zh) * 2018-12-26 2019-03-08 东莞理工学院 改善谐波性能的宽带匹配电路及功率放大器
US11463055B2 (en) 2019-12-05 2022-10-04 Nxp Usa, Inc. Amplifiers and manufacture method thereof

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