WO2009054297A1 - 基板の研磨方法 - Google Patents

基板の研磨方法 Download PDF

Info

Publication number
WO2009054297A1
WO2009054297A1 PCT/JP2008/068661 JP2008068661W WO2009054297A1 WO 2009054297 A1 WO2009054297 A1 WO 2009054297A1 JP 2008068661 W JP2008068661 W JP 2008068661W WO 2009054297 A1 WO2009054297 A1 WO 2009054297A1
Authority
WO
WIPO (PCT)
Prior art keywords
liquid
polishing
metal
metal layer
polished
Prior art date
Application number
PCT/JP2008/068661
Other languages
English (en)
French (fr)
Inventor
Kouji Haga
Jin Amanokura
Hiroshi Nakagawa
Kouji Mishima
Original Assignee
Hitachi Chemical Company, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Hitachi Chemical Company, Ltd. filed Critical Hitachi Chemical Company, Ltd.
Publication of WO2009054297A1 publication Critical patent/WO2009054297A1/ja

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)

Abstract

　まず、酸化金属溶解剤、金属防食剤、酸化金属溶解調整剤及び水を含有する第１の液と、金属酸化剤を含有する第２の液と、を所定の割合で混合した第１の研磨液を用いて、バリア層２０が露出しないように金属層３０を研磨する。次に、第１の液と第２の液とを、第１の研磨液よりも第２の液の割合が大きくなるように混合した第２の研磨液を用いて金属層３０を研磨し、バリア層３０のうち層間絶縁膜１０の隆起部１２の上方に位置する部分を露出させる。これにより、層間絶縁膜１０上にバリア層２０を介して金属層３０が設けられた基板の金属層３０を研磨するに際し、高い研磨速度と被研磨面の平坦性とを両立することが可能となる。
PCT/JP2008/068661 2007-10-25 2008-10-15 基板の研磨方法 WO2009054297A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-277937 2007-10-25
JP2007277937A JP2011014552A (ja) 2007-10-25 2007-10-25 基板の研磨方法

Publications (1)

Publication Number Publication Date
WO2009054297A1 true WO2009054297A1 (ja) 2009-04-30

Family

ID=40579403

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/068661 WO2009054297A1 (ja) 2007-10-25 2008-10-15 基板の研磨方法

Country Status (3)

Country Link
JP (1) JP2011014552A (ja)
TW (1) TW200937513A (ja)
WO (1) WO2009054297A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011222716A (ja) * 2010-04-08 2011-11-04 Fujimi Inc 研磨用組成物及び研磨方法
CN110998800A (zh) * 2017-08-14 2020-04-10 日立化成株式会社 研磨液、研磨液套剂及研磨方法

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006269600A (ja) * 2005-03-23 2006-10-05 Fuji Photo Film Co Ltd 化学的機械的研磨方法及びこれに用いる研磨液

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006269600A (ja) * 2005-03-23 2006-10-05 Fuji Photo Film Co Ltd 化学的機械的研磨方法及びこれに用いる研磨液

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011222716A (ja) * 2010-04-08 2011-11-04 Fujimi Inc 研磨用組成物及び研磨方法
CN110998800A (zh) * 2017-08-14 2020-04-10 日立化成株式会社 研磨液、研磨液套剂及研磨方法
CN110998800B (zh) * 2017-08-14 2023-09-22 株式会社力森诺科 研磨液、研磨液套剂及研磨方法

Also Published As

Publication number Publication date
JP2011014552A (ja) 2011-01-20
TW200937513A (en) 2009-09-01

Similar Documents

Publication Publication Date Title
CN102473628B (zh) 用于半导体处理中的铜移除及平面化的湿蚀刻方法
CN105369249B (zh) 蚀刻剂组合物和制造薄膜晶体管阵列基板的方法
TW200621958A (en) CMP polishing agent and polishing method of substrate
EP1813656A3 (en) Metal-polishing liquid and chemical mechanical polishing method using the same
WO2005074449A3 (en) Structure comprising amorphous carbon film and method of forming thereof
WO2009111001A3 (en) Silicon carbide polishing method utilizing water-soluble oxidizers
WO2008132983A1 (ja) 研磨剤組成物および半導体集積回路装置の製造方法
CN102051128B (zh) 一种化学机械抛光液
Oh et al. Planarization of copper layer for damascene interconnection by electrochemical polishing in alkali-based solution
WO2002020682A3 (en) Method of initiating copper cmp process
WO2007109464A3 (en) Methods for etching a bottom anti-reflective coating layer in dual damascene application
CN101916786A (zh) 一种大功率平面结双向tvs二极管芯片及其生产方法
EP1894978A3 (en) Polishing composition and polishing process
Cho et al. Role of hydrogen peroxide in alkaline slurry on the polishing rate of polycrystalline Ge2Sb2Te5 film in chemical mechanical polishing
US20080149487A1 (en) Via Plating Method of System in Package and System Thereof
Matovu et al. Chemical mechanical polishing of Ge in hydrogen peroxide-based silica slurries: role of ionic strength
WO2009054297A1 (ja) 基板の研磨方法
Fu et al. Effect of 1, 2, 4-triazole on galvanic corrosion between cobalt and copper in CMP based alkaline slurry
WO2009119485A1 (ja) 金属用研磨液及びこの研磨液を用いた研磨方法
EP2093789A3 (en) Polishing copper-containing patterned wafers
CN101506985A (zh) 半导体装置和半导体装置的制造方法
CN101970589A (zh) 一种化学机械抛光液
CN101490734B (zh) 用于抛光低介电材料的抛光液
WO2004030062A1 (ja) 研磨剤組成物、その製造方法及び研磨方法
CN103205205B (zh) 一种碱性化学机械抛光液

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08843197

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08843197

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: JP