WO2009054250A1 - 半導体基板、半導体基板の検査方法 - Google Patents
半導体基板、半導体基板の検査方法 Download PDFInfo
- Publication number
- WO2009054250A1 WO2009054250A1 PCT/JP2008/068012 JP2008068012W WO2009054250A1 WO 2009054250 A1 WO2009054250 A1 WO 2009054250A1 JP 2008068012 W JP2008068012 W JP 2008068012W WO 2009054250 A1 WO2009054250 A1 WO 2009054250A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- semiconductor substrate
- semiconductor
- film
- inspecting
- uniformized
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title abstract 12
- 239000000758 substrate Substances 0.000 title abstract 8
- 230000015572 biosynthetic process Effects 0.000 abstract 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
- G01N21/9501—Semiconductor wafers
- G01N21/9505—Wafer internal defects, e.g. microcracks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L22/00—Testing or measuring during manufacture or treatment; Reliability measurements, i.e. testing of parts without further processing to modify the parts as such; Structural arrangements therefor
- H01L22/10—Measuring as part of the manufacturing process
- H01L22/12—Measuring as part of the manufacturing process for structural parameters, e.g. thickness, line width, refractive index, temperature, warp, bond strength, defects, optical inspection, electrical measurement of structural dimensions, metallurgic measurement of diffusions
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
- G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
- G01N21/84—Systems specially adapted for particular applications
- G01N21/88—Investigating the presence of flaws or contamination
- G01N21/89—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles
- G01N21/892—Investigating the presence of flaws or contamination in moving material, e.g. running paper or textiles characterised by the flaw, defect or object feature examined
- G01N21/894—Pinholes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Health & Medical Sciences (AREA)
- Life Sciences & Earth Sciences (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Biochemistry (AREA)
- General Health & Medical Sciences (AREA)
- Immunology (AREA)
- Pathology (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Abstract
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP08840886A EP2204847A1 (en) | 2007-10-24 | 2008-10-03 | Semiconductor substrate and method for inspecting semiconductor substrate |
US12/520,986 US20100013058A1 (en) | 2007-10-24 | 2008-10-03 | Semiconductor Wafer and Semiconductor Wafer Inspection Method |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007276309 | 2007-10-24 | ||
JP2007-276309 | 2007-10-24 | ||
JP2008-212724 | 2008-08-21 | ||
JP2008212724A JP2009124104A (ja) | 2007-10-24 | 2008-08-21 | 半導体基板、半導体基板の検査方法 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009054250A1 true WO2009054250A1 (ja) | 2009-04-30 |
Family
ID=40579356
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/068012 WO2009054250A1 (ja) | 2007-10-24 | 2008-10-03 | 半導体基板、半導体基板の検査方法 |
Country Status (7)
Country | Link |
---|---|
US (1) | US20100013058A1 (ja) |
EP (1) | EP2204847A1 (ja) |
JP (1) | JP2009124104A (ja) |
KR (1) | KR20100077127A (ja) |
RU (1) | RU2009123956A (ja) |
TW (1) | TW200931557A (ja) |
WO (1) | WO2009054250A1 (ja) |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102023168B (zh) * | 2010-11-08 | 2013-04-17 | 北京大学深圳研究生院 | 半导体晶圆表面的芯片检测方法及系统 |
JP7468429B2 (ja) | 2021-03-29 | 2024-04-16 | 三菱電機株式会社 | 半導体製造装置および半導体装置の製造方法 |
JP7482825B2 (ja) | 2021-04-19 | 2024-05-14 | 三菱電機株式会社 | 検査装置、半導体基板の検査方法、半導体基板の製造方法、および半導体装置の製造方法 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06183879A (ja) * | 1992-12-17 | 1994-07-05 | Ibiden Co Ltd | 液相エピタキシーによる単結晶薄膜の製造方法 |
JP2001237286A (ja) * | 2000-02-21 | 2001-08-31 | Kyoshin Denki Kk | Siウエハ−検査装置およびSiウエハ−検査方法 |
WO2002099169A1 (fr) * | 2001-06-04 | 2002-12-12 | The New Industry Research Organization | Carbure de silicium monocristal et son procede de production |
JP2004309426A (ja) * | 2003-04-10 | 2004-11-04 | Denso Corp | 透光性基板の評価方法及び透光性基板の評価装置 |
JP2005311261A (ja) * | 2004-04-26 | 2005-11-04 | Nippon Steel Corp | 炭化珪素製放熱板 |
JP2007269627A (ja) * | 2002-03-19 | 2007-10-18 | Central Res Inst Of Electric Power Ind | 基板から継続するマイクロパイプを低減させるSiC結晶の製造方法およびSiC結晶、SiC単結晶膜、SiC半導体素子、SiC単結晶基板および電子デバイス、ならびにSiCバルク結晶の製造方法 |
-
2008
- 2008-08-21 JP JP2008212724A patent/JP2009124104A/ja not_active Withdrawn
- 2008-10-03 WO PCT/JP2008/068012 patent/WO2009054250A1/ja active Application Filing
- 2008-10-03 EP EP08840886A patent/EP2204847A1/en not_active Withdrawn
- 2008-10-03 US US12/520,986 patent/US20100013058A1/en not_active Abandoned
- 2008-10-03 KR KR1020097011921A patent/KR20100077127A/ko not_active Application Discontinuation
- 2008-10-03 RU RU2009123956/28A patent/RU2009123956A/ru not_active Application Discontinuation
- 2008-10-16 TW TW097139773A patent/TW200931557A/zh unknown
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH06183879A (ja) * | 1992-12-17 | 1994-07-05 | Ibiden Co Ltd | 液相エピタキシーによる単結晶薄膜の製造方法 |
JP2001237286A (ja) * | 2000-02-21 | 2001-08-31 | Kyoshin Denki Kk | Siウエハ−検査装置およびSiウエハ−検査方法 |
WO2002099169A1 (fr) * | 2001-06-04 | 2002-12-12 | The New Industry Research Organization | Carbure de silicium monocristal et son procede de production |
JP2007269627A (ja) * | 2002-03-19 | 2007-10-18 | Central Res Inst Of Electric Power Ind | 基板から継続するマイクロパイプを低減させるSiC結晶の製造方法およびSiC結晶、SiC単結晶膜、SiC半導体素子、SiC単結晶基板および電子デバイス、ならびにSiCバルク結晶の製造方法 |
JP2004309426A (ja) * | 2003-04-10 | 2004-11-04 | Denso Corp | 透光性基板の評価方法及び透光性基板の評価装置 |
JP2005311261A (ja) * | 2004-04-26 | 2005-11-04 | Nippon Steel Corp | 炭化珪素製放熱板 |
Also Published As
Publication number | Publication date |
---|---|
KR20100077127A (ko) | 2010-07-07 |
JP2009124104A (ja) | 2009-06-04 |
TW200931557A (en) | 2009-07-16 |
EP2204847A1 (en) | 2010-07-07 |
RU2009123956A (ru) | 2010-12-27 |
US20100013058A1 (en) | 2010-01-21 |
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