WO2009049408A1 - Nixels électroluminescents et éléments avec contacts électriques enroulés - Google Patents

Nixels électroluminescents et éléments avec contacts électriques enroulés Download PDF

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Publication number
WO2009049408A1
WO2009049408A1 PCT/CA2008/001810 CA2008001810W WO2009049408A1 WO 2009049408 A1 WO2009049408 A1 WO 2009049408A1 CA 2008001810 W CA2008001810 W CA 2008001810W WO 2009049408 A1 WO2009049408 A1 WO 2009049408A1
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WO
WIPO (PCT)
Prior art keywords
dielectric
phosphor
substrate
electrically conductive
glass
Prior art date
Application number
PCT/CA2008/001810
Other languages
English (en)
Inventor
Adrian H. Kitai
Original Assignee
Nanolumens Acquisition, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nanolumens Acquisition, Inc. filed Critical Nanolumens Acquisition, Inc.
Publication of WO2009049408A1 publication Critical patent/WO2009049408A1/fr

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Classifications

    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/12—Light sources with substantially two-dimensional radiating surfaces
    • H05B33/26—Light sources with substantially two-dimensional radiating surfaces characterised by the composition or arrangement of the conductive material used as an electrode

Definitions

  • This invention relates generally to electroluminescent (EL) displays, and more particularly, to displays composed of individually produced EL elements or nixels each having wrap-around electrical contacts.
  • EL electroluminescent
  • Electroluminescence a well-known phenomenon commonly exploited in flat panel displays, is the conversion of electrical energy to light via the application of an electrical field to a phosphor.
  • EL devices include Light Emitting Diodes (LEDs), laser diodes, and EL displays (ELDs).
  • LEDs Light Emitting Diodes
  • ELDs EL displays
  • an ELD is in the form of a thin film electroluminescent (TFEL) device, which is a solid-state device generally comprising a phosphor layer positioned between two dielectric layers, and further including an electrode layer on the surface of each dielectric layer to form a five-layer structure, where the electrode layers define the outer layers and the phosphor layer defines the inner middle layer.
  • TFEL thin film electroluminescent
  • electroluminescent (EL) nixels pixel devices
  • the electroluminescent (EL) nixels generally include a laminate of a rear electrode, a first dielectric layer, an EL phosphor layer, a second dielectric layer, and a front electrode. At least one of these two electrodes needs to be transparent for light to escape the display device.
  • a drawback to these single sided nixel structures is that they require thin ceramic dielectric sheets having high dielectric constant.
  • the mechanical strength of these sheets is limited, which may result in handling challenges. Making the ceramic sheets thicker increases the drive voltages and electrical power necessary to address a display.
  • connection to the electrodes can be difficult because of location and size.
  • the systems and methods of the present invention produce an individually sized and shaped modular EL element or chip which is supported by glass substrates.
  • these EL elements may be "nixels" as illustratively described herein, which are individually sized and modular shaped EL elements that are adapted to form part of an integrated ELD having multiple electrical contacts on the same side of the EL element structure.
  • the present invention provides an electroluminescent display element, comprising: a glass or ceramic substrate having an upper surface; a rear electrode located on the upper surface of the glass or ceramic substrate and indented in from the peripheral edges of the glass or ceramic substrate; a rear dielectric layer located on an upper surface of the rear electrode having edges which are flush with the peripheral edges of the glass or ceramic substrate; a phosphor layer located on an upper surface of the rear dielectric layer; optionally a front dielectric layer located on an upper surface of the phosphor layer thus forming an EL chip stack; first and second front wraparound conductive layers, said first front wrap-around conductive layer located on an upper surface of said front dielectric and wrapped around one side of said EL chip stack, and located on a bottom surface of said glass or ceramic substrate, said second front wrap-around conductive layer located on an upper surface of said front dielectric, spaced from and not in electrical contact with said first wrap-around conductive layer, and wrapped around another side of said EL chip stack, and located on a lower surface of said glass or ceramic
  • the present invention also provides an electroluminescent display element, comprising: a glass or ceramic substrate having an upper surface and a lower surface; first and second rear electrodes located on the upper surface of the glass or ceramic substrate with the first and second rear electrodes being spaced from each other and each extending to a peripheral edge of the glass or ceramic substrate thereby being flush with a corresponding vertical side of the glass or ceramic substrate; a rear dielectric layer located on upper surfaces of the first and second rear electrodes; a phosphor layer located on an upper surface of the rear dielectric layer; optionally a front dielectric layer located on an upper surface of the phosphor layer; an upper conductive and transparent electrode layer located on an upper surface of the front dielectric layer.
  • the present invention also provides an electroluminescent display element, comprising: a glass or ceramic substrate having an upper surface; a rear electrode located on the upper surface of the glass or ceramic substrate and indented in from the peripheral edges of the glass or ceramic substrate; a rear dielectric layer located on an upper surface of the rear electrode having edges which are flush with the peripheral edges of the glass or ceramic substrate; a phosphor layer located on an upper surface of the rear dielectric layer; optionally a front dielectric layer located on an upper surface of the phosphor layer thus forming an EL chip stack; and first and second front wrap-around conductive layers, said first front wrap-around conductive layer located on an upper surface of said front dielectric and wrapped around one side of said EL chip stack, and located on a bottom surface of said glass or ceramic substrate, said second wrap-around conductive layer located on a lower surface of said glass or ceramic substrate and spaced from and not in electrical contact with a portion of said first wrap-around conductive layer located on said lower surface of said glass or ceramic substrate, said second wrap-around
  • the present invention also provides a process of producing electroluminescent display elements, comprising the steps of;
  • each electroluminescent display element includes at least one electrically conductive section
  • dielectric/phosphor/dielectric stacks on each of the plurality of electrically conductive sections, said phosphor in said dielectric/phosphor/dielectric stack on each electrically conductive section having a composition selected to give light of selected wavelength when a voltage is applied thereacross;
  • the present invention provides a process of producing electroluminescent display elements, comprising the steps of;
  • each wrap around electrode is deposited on part of a front surface of the substrate and is deposited around an edge of the substrate and deposited on a back surface of the substrate, with said two wrap-around electrodes being physically separated from each other so that they are electrically insulated from each other, with a rear electrode layer to provide a plurality of electrically conductive sections electrically insulated from each other across said substrate surface; c) growing at least one dielectric/phosphor/dielectric stack on the front surfaces of each substrate so that said at least one dielectric/phosphor/dielectric stack covers both electrically conductive portions of the at least one pair of wrap around electrodes on said front surface, said phosphor in said dielectric/phosphor/dielectric stack on each electrically conductive section having a composition
  • FIG. 1 illustrates a perspective view of a single full color modular
  • FIG. 2 diagrammatically illustrates the first steps in production of
  • FIG. 3 illustrates additional steps in production
  • FIG. 4 shows the back side of the EL chip
  • FIG. 5 shows a large display formed from the chips produced according to the present invention
  • FIG. 6 shows a cross sectional side view of an embodiment of the fully formed EL chip constructed according to the present invention
  • FIG. 7 shows a another embodiment similar to that of FIG. 6 but using thicker rear dielectric layer
  • FIG. 8 shows another embodiment of a EL chip using double rear electrodes
  • FIG. 9 shows another embodiment of a EL chip using front/back wrap around electrodes.
  • EL electroluminescent
  • these EL elements may be "nixels" as illustratively described herein, which are individually sized and modular shaped EL elements that are adapted to form part of an integrated ELD having multiple electrical contacts on the same side of the EL element structure.
  • module may refer to a self-contained component of a system, which has a well-defined interface to the other components.
  • something is modular if it includes or uses modules which can be interchanged as units without disassembly of the module. Design, manufacture, repair, etc. of the modules may be complex, but this is not relevant; once the module exists, it can easily be connected to or disconnected from the system.
  • specific embodiments of the invention are disclosed herein. It should be understood, however, that these are merely exemplary embodiments of the invention that can be variably practiced.
  • FIG. 1 illustrates a perspective view of a single full color modular EL chip 10 constructed in accordance with the present invention.
  • EL chip 10 includes a substrate 12, preferably glass or ceramic, a top surface of the EL chip 10 having laid thereon red pixels, green pixels and blue pixels as shown.
  • Located on a front surface of glass substrate 12 is a double-front contact ITO electrodes 38 and 40 (which are located on top of dielectric/phosphor/dielectric stacks-not shown) having a gap 36 between them which connect to corresponding wrap-around electrodes 54.
  • the method of fabrication of a large number of chips 10 shown in FIG. 1 involves starting with a large surface area sheet of substrate, such as a large glass sheet or dielectric sheet. First, a rear electrode material is uniformly deposited across a planar front side of the sheet. The rear electrode is patterned on the large substrate sheet to produce a large number of sections having a pattern such as that shown in FIG. 2 which include conductive rear electrode sections 30 separated from each other and from the edges of the substrate 12 by insulating gaps 32. The large surface area sheet of substrate is then scored along score lines to allow dry separation of substrate pieces later so that when the large surface area sheet of substrate is broken into separate pieces a large number of the elements 10 in FIGS. 1 and 2 are produced so that the score lines are along the edges of individual substrate 12.
  • a large surface area sheet of substrate such as a large glass sheet or dielectric sheet.
  • the next step is to grow the dielectric/phosphor/dielectric stack on top of rear electrode sections 30 seen in FIG. 2.
  • Three dielectric/phosphor/dielectric stacks are grown side by side on the three separated rear electrode areas 30, one being for producing green light (G), one for producing red (R) light and the third for producing blue (B) light.
  • the dielectric/phosphor/dielectric stacks may be configured differently for different embodiments as will be discussed with reference to FIGS. 6 to 9 discussed hereinafter.
  • front electrodes are deposited onto the top of the stack through a mask so that two separate electrodes 38 and 40 are deposited onto each of the stacks but separated by a gap 36 so that there are two red pixels, two blue pixels and two green pixels on each chip 10.
  • the electrode material preferably indium tin oxide (ITO)
  • ITO indium tin oxide
  • the scored glass plate is broken into pieces to produce a plurality of sections 12. Then for each section 12 the back and side electrodes 54 are deposited. When sputtering is used to deposit the layers or electrodes, completed side electrodes 54 may be formed automatically during sputtering.
  • the back view of chip 10 shown in FIG. 4 shows that the back electrodes 54 have extra spacing to avoid short circuits during mounting on a flex board.
  • FIG. 4 is a top view looking at the back electrodes 54 deposited directly on the glass substrate.
  • the present method is very advantageous because it provides for placement of the phosphor layer on the front of the chip, which enables color-by-blue approach to full color.
  • the phosphor-dielectric-phosohor stack is the same for all the colors, and the red, green and blue colors are determined by the presence or absence of subsequent materials deposited on top of the front electrodes 38 and 40.
  • These subsequent materials comprise filters and fluorescent materials. They are typically polymers based materials.
  • electrical connections are made on the back of the glass to avoid damage to the EL layers. Glass and/or polymer seals may be applied to the front of chip and edges of the glass plates will not be visible since light does not travel through glass chip.
  • four (4) or more full color pixels can be made on one glass substrate. Electrical contacts can wrap around all sides of the chip. As shown in FIG. 5 there are eight (8) contacts total for four (4) full color pixels. Advantages of the present method are that the chips 10 may be made larger than the size of a single pixel or subpixel to make handling easier. The wrap-around electrical contacts are added to the chips after high temperature processing is done so that there is no electrode exposure to sulphur or high temperatures during fabrication.
  • FIG. 6 to 9 show cross sectional side views of different embodiments of fully formed EL chip constructed according to the present invention.
  • FIG. 6 shows an EL chip 10 as produced by the method discussed above and includes substrate 12 of glass or ceramic on which rear electrode 30 is laid.
  • the dielectric/phosphor/dielectric stack includes a rear dielectric layer 46 located on electrode layer 30, the phosphor layer 48 is located on layer 46 and a front dielectric layer 50 is located on phosphor layer 48.
  • Two wrap around electrodes 54 made of for example indium tin oxide (ITO) wrap around the sides of the stack.
  • the thin film dielectric layers are usually about 0.2 to about 2 microns thick.
  • the rear electrode 30 located on the upper surface of the glass or ceramic substrate 12 is indented in from the peripheral edges of the glass or ceramic substrate by gap 32 and may be needed to prevent short circuits between front electrodes 30 and rear electrodes 54.
  • the wrap-around electrodes 54 are preferably made using indium tin oxide (ITO) as the electrode material on the top surface of the upper dielectric layer 50 and ITO could be used for the rest of wrap-around electrode 54 or a metal layer could be used instead.
  • ITO indium tin oxide
  • FIG. 7 shows another embodiment of an EL chip 60 similar to that of FIG. 6 but using a thicker rear dielectric layer 46'.
  • This thick film dielectric structure has a thick rear dielectric layer 46' (about 10 to about 50 microns) rather than the thin film dielectric layers 46, usually about 0.2 to about 2 microns in FIG. 6.
  • This embodiment allows for a less breakdown- prone structure and high phosphor brightnesses with high dielectric constant thick film dielectric materials.
  • FIG. 8 shows another embodiment of an EL chip 80 using double rear electrodes 82 and 84 with a gap 86 between them on the top of substrate 12 and a gap 88 on the bottom of substrate 12, as disclosed in co- pending United States Patent Application Serial No. 11/683,489 Filed March 8, 2007, entitled ELECTROLUMINESCENT NIXELS AND ELEMENTS WITH SINGLE-SIDED ELECTRICAL CONTACTS, which is entirely incorporated herein by reference.
  • Chip 80 (produced by the method discussed below) includes substrate 12 of glass or ceramic on which wrap-around electrodes 82 and 84 are laid to give electrical conductive portions on the top surface.
  • the dielectric/phosphor/dielectric stack includes a rear dielectric layer 46 unformly deposited onto the electrically conductive portions of electrodes 82 and 84 on the top surface of substrate 12 and covers the gap 86 as well.
  • the phosphor layer 48 is located on layer 46 and a front dielectric layer 50 is located on phosphor layer 48.
  • a generally transparent top electrode 90 (preferably made of for example indium tin oxide (ITO)) on top of dielectric layer 50 completes the circuit. In operation a voltage is applied between electrode 90 and electrodes 82 and 84 on the bottom surface of substrate 12.
  • ITO indium tin oxide
  • the double rear electrode structure is functionally similar to the double front electrode structure, however the fabrication sequence is different.
  • the wrap-around electrode structure is deposited before the dielectric/phosphor/dielectric stack is deposited, which requires that the wraparound electrode structure must be capable of withstanding the associated temperature process steps for the deposition of said dielectric/phosphor/dielectric stack.
  • the substrate sheet needs to be broken into small pieces before the wrap-around electrodes can be formed, and therefore before the dielectric/phosphor/dielectric stack is deposited.
  • FIG. 9 shows another embodiment of an EL chip 90 using front/back wrap around electrodes 92 and 94.
  • wraparound electrode 94 connects to the ITO front electrode 96 of the EL chip stack
  • the other of the wrap-around electrodes 92 connects to the rear electrode 30 of the EL chip stack located on substrate 12.
  • the gap 32 is present on one side of the substrate only and on the other side of the substrate the electrode 30 comes to the edge of the substrate so it can make contact with wrap-around electrode layer 92.
  • the dielectric layer 46 may be either thick film or thin film in this embodiment.
  • the structure of EL chip 90 may be made in the same order as EL chip 10 of FIG. 6, with the difference being the side of the chip is masked such that the portion of wraparound electrode 92 that comes up the side (right side in FIG. 9) of chip 90 only contacts electrode 30 and does not extend any further.
  • all the layers of the EL chips disclosed herein may be made by any known film deposition technique including but not limited to sputtering, evaporation, screen printing, sol gel etc, ie the methods disclosed herein are not restricted to any specific method.
  • the double front electrode structure as disclosed in the embodiments of FIGS. 6 and 7 provides for the fabrication on a large glass or ceramic substrate of a series of layers including rear electrode layer, rear dielectric layer, phosphor layer, front dielectric layer and front transparent electrode layer. After these layers are grown, the large substrate may be diced up into small EL chips, and the wrap around electrodes, which may be ITO or metal films, are applied.
  • This double front electrode structure therefore is advantageous in that it does not require the dicing early on in processing, which reduces the handling issues of the large number of parts during thin film deposition.
  • the double front electrode structure is very advantageous in that it eliminates the need to connect to a rear electrode, and may be easiest to process since the wrap around step can be delayed until after other layers are produced.
  • the double back electrode structure eliminates the need to connect to the transparent front electrodes, but requires that wrap-around electrodes can contact the 'buried' rear electrode layer.
  • the double rear electrode structure (FIG. 8) has the advantage of not having to have electrical connections required to the front transparent conductor. This may be advantageous since when a seal is preferred over the front of the EL chip.
  • the front/rear structure offers a voltage reduction by a factor of two compared to the other structures.
  • the EL chip 90 in FIG. 9 has the advantage of a lower operating voltage since only a single pair of electrodes exists for each element instead of a split upper or lower electrode structure that doubles the operating voltages.
  • the front/rear electrode wrap around configuration requires connections to both front and buried rear electrodes.
  • the drive voltage will be 2 times lower, and capacitance will be 4 times higher, compared to the double front or double back electrode designs.
  • the present invention is very versatile in that single or double contact designs may be realized with wrap-around electrodes.
  • the number of connections to flex is decreased as more pixels are arranged on one chip. This makes assembly more reliable.
  • the methods of the invention can produce a flexible display with scalable dimensions that avoids the limitations imposed by prior art processes that employ a large rigid glass substrate to provide structure.
  • Exemplary embodiments are included herein as examples of an invention that can be variably implemented and practiced, and as such, are not considered to be limitations, since modifications and alternative embodiments will be apparent to those skilled in the art. Thus, the invention encompasses all the embodiments and their equivalents that fall within the scope of the appended claims.
  • the terms “comprises”, “comprising”, “including” and “includes” are to be construed as being inclusive and open ended, and not exclusive. Specifically, when used in this specification including claims, the terms “comprises”, “comprising”, “including” and “includes” and variations thereof mean the specified features, steps or components are included. These terms are not to be interpreted to exclude the presence of other features, steps or components.

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  • Electroluminescent Light Sources (AREA)

Abstract

La présente invention concerne des systèmes et des procédés pour des éléments d'affichage électroluminescents (ELD) qui possèdent des électrodes enroulées. Les systèmes et procédés de la présente invention produisent un élément ou une puce EL modulaire dimensionné et formé individuellement qui est supporté par des substrats en verre. Selon un mode de réalisation de l'invention, ces éléments EL peuvent être des éléments EL individuellement dimensionnés et de forme modulaire qui sont conçus pour former une partie d'un ELD intégré qui possède de multiples contacts électriques sur le même côté de la structure d'élément EL.
PCT/CA2008/001810 2007-10-16 2008-10-16 Nixels électroluminescents et éléments avec contacts électriques enroulés WO2009049408A1 (fr)

Applications Claiming Priority (2)

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US96084207P 2007-10-16 2007-10-16
US60/960,842 2007-10-16

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WO2009049408A1 true WO2009049408A1 (fr) 2009-04-23

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014070442A1 (fr) * 2012-10-30 2014-05-08 Sonoco Development Incorporated Dispositif d'affichage électroluminescent et procédé de fabrication

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4777402A (en) * 1985-06-07 1988-10-11 Alps Electric Co., Ltd. Thin film EL display device having multiple EL layers
US5302468A (en) * 1992-01-28 1994-04-12 Pioneer Electronic Corporation Organic electroluminescent display apparatus
US5416494A (en) * 1991-12-24 1995-05-16 Nippondenso Co., Ltd. Electroluminescent display
US5820996A (en) * 1996-01-31 1998-10-13 Sharp Kabushiki Kaisha Electroluminescence device and method of manufacturing same
US6099979A (en) * 1995-07-24 2000-08-08 Denso Corporation Electroluminescent display element and manufacturing method for manufacturing same
US20020011783A1 (en) * 2000-02-16 2002-01-31 Idemitsu Kosan Co., Ltd Active-driving organic el light emission device and process for producing the same
US20070159085A1 (en) * 2005-10-31 2007-07-12 Idemitsu Kosan Co., Ltd. Organic el emission device

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4777402A (en) * 1985-06-07 1988-10-11 Alps Electric Co., Ltd. Thin film EL display device having multiple EL layers
US5416494A (en) * 1991-12-24 1995-05-16 Nippondenso Co., Ltd. Electroluminescent display
US5302468A (en) * 1992-01-28 1994-04-12 Pioneer Electronic Corporation Organic electroluminescent display apparatus
US6099979A (en) * 1995-07-24 2000-08-08 Denso Corporation Electroluminescent display element and manufacturing method for manufacturing same
US5820996A (en) * 1996-01-31 1998-10-13 Sharp Kabushiki Kaisha Electroluminescence device and method of manufacturing same
US20020011783A1 (en) * 2000-02-16 2002-01-31 Idemitsu Kosan Co., Ltd Active-driving organic el light emission device and process for producing the same
US20070159085A1 (en) * 2005-10-31 2007-07-12 Idemitsu Kosan Co., Ltd. Organic el emission device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2014070442A1 (fr) * 2012-10-30 2014-05-08 Sonoco Development Incorporated Dispositif d'affichage électroluminescent et procédé de fabrication

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