WO2009048131A1 - 窒化物半導体装置 - Google Patents
窒化物半導体装置 Download PDFInfo
- Publication number
- WO2009048131A1 WO2009048131A1 PCT/JP2008/068442 JP2008068442W WO2009048131A1 WO 2009048131 A1 WO2009048131 A1 WO 2009048131A1 JP 2008068442 W JP2008068442 W JP 2008068442W WO 2009048131 A1 WO2009048131 A1 WO 2009048131A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- nitride semiconductor
- semiconductor device
- main surface
- substrate
- substrate main
- Prior art date
Links
- 150000004767 nitrides Chemical class 0.000 title abstract 6
- 239000004065 semiconductor Substances 0.000 title abstract 6
- 239000000758 substrate Substances 0.000 abstract 3
- 239000013078 crystal Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
- H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
- H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/26—Materials of the light emitting region
- H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table
- H01L33/32—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table containing nitrogen
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
- H01S5/320225—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth polar orientation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
- H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
- H01S5/3216—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities quantum well or superlattice cladding layers
Landscapes
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Electromagnetism (AREA)
- Optics & Photonics (AREA)
- Led Devices (AREA)
- Semiconductor Lasers (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
六方晶構造の窒化物半導体からなり、面法線が極性面(c面)の結晶軸と0.2度乃至5度の角度をなす基板主面(11)を有する基板(10)と、基板主面(11)上に配置され、窒化物半導体からなる超格子構造の層を含む積層体(20)とを備える。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-264253 | 2007-10-10 | ||
JP2007264253 | 2007-10-10 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009048131A1 true WO2009048131A1 (ja) | 2009-04-16 |
Family
ID=40549274
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/068442 WO2009048131A1 (ja) | 2007-10-10 | 2008-10-10 | 窒化物半導体装置 |
Country Status (2)
Country | Link |
---|---|
TW (1) | TWI450414B (ja) |
WO (1) | WO2009048131A1 (ja) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2284967A1 (en) * | 2009-07-14 | 2011-02-16 | Sumitomo Electric Industries, Ltd. | Group III nitride semiconductor laser diode |
EP2287981A1 (en) * | 2009-07-15 | 2011-02-23 | Sumitomo Electric Industries, Ltd. | Gallium nitride-based semiconductor laser diode |
EP2747220A4 (en) * | 2011-08-09 | 2015-07-08 | Soko Kagaku Co Ltd | NITRIDE SEMICONDUCTOR WITH UV-LIGHTING ELEMENT |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004327655A (ja) * | 2003-04-24 | 2004-11-18 | Sharp Corp | 窒化物半導体レーザ素子、その製造方法および半導体光学装置 |
JP2007157765A (ja) * | 2005-11-30 | 2007-06-21 | Rohm Co Ltd | 窒化ガリウム半導体発光素子 |
-
2008
- 2008-10-09 TW TW097139146A patent/TWI450414B/zh not_active IP Right Cessation
- 2008-10-10 WO PCT/JP2008/068442 patent/WO2009048131A1/ja active Application Filing
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2004327655A (ja) * | 2003-04-24 | 2004-11-18 | Sharp Corp | 窒化物半導体レーザ素子、その製造方法および半導体光学装置 |
JP2007157765A (ja) * | 2005-11-30 | 2007-06-21 | Rohm Co Ltd | 窒化ガリウム半導体発光素子 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP2284967A1 (en) * | 2009-07-14 | 2011-02-16 | Sumitomo Electric Industries, Ltd. | Group III nitride semiconductor laser diode |
US8619828B2 (en) | 2009-07-14 | 2013-12-31 | Sumitomo Electronic Industries, Ltd. | Group III nitride semiconductor laser diode |
EP2287981A1 (en) * | 2009-07-15 | 2011-02-23 | Sumitomo Electric Industries, Ltd. | Gallium nitride-based semiconductor laser diode |
US8284811B2 (en) | 2009-07-15 | 2012-10-09 | Sumitomo Electric Industries, Ltd. | Gallium nitride-based semiconductor laser diode |
EP2747220A4 (en) * | 2011-08-09 | 2015-07-08 | Soko Kagaku Co Ltd | NITRIDE SEMICONDUCTOR WITH UV-LIGHTING ELEMENT |
US9356192B2 (en) | 2011-08-09 | 2016-05-31 | Soko Kagaku Co., Ltd. | Nitride semiconductor ultraviolet light-emitting element |
US9502606B2 (en) | 2011-08-09 | 2016-11-22 | Soko Kagaku Co., Ltd. | Nitride semiconductor ultraviolet light-emitting element |
Also Published As
Publication number | Publication date |
---|---|
TWI450414B (zh) | 2014-08-21 |
TW200924250A (en) | 2009-06-01 |
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