WO2009048056A1 - 化合物半導体エピタキシャルウェーハおよびその製造方法 - Google Patents

化合物半導体エピタキシャルウェーハおよびその製造方法 Download PDF

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Publication number
WO2009048056A1
WO2009048056A1 PCT/JP2008/068229 JP2008068229W WO2009048056A1 WO 2009048056 A1 WO2009048056 A1 WO 2009048056A1 JP 2008068229 W JP2008068229 W JP 2008068229W WO 2009048056 A1 WO2009048056 A1 WO 2009048056A1
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Prior art keywords
growth
rate
producing
compound semiconductor
phase growing
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PCT/JP2008/068229
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English (en)
French (fr)
Inventor
Fumitaka Kume
Masayuki Shinohara
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Shin-Etsu Handotai Co., Ltd.
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Application filed by Shin-Etsu Handotai Co., Ltd. filed Critical Shin-Etsu Handotai Co., Ltd.
Priority to JP2009536997A priority Critical patent/JP5071484B2/ja
Priority to CN2008801090440A priority patent/CN101809769B/zh
Publication of WO2009048056A1 publication Critical patent/WO2009048056A1/ja

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/16—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a particular crystal structure or orientation, e.g. polycrystalline, amorphous or porous
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02387—Group 13/15 materials
    • H01L21/02395—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02461—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02463—Arsenides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/02543—Phosphides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02612—Formation types
    • H01L21/02617—Deposition types
    • H01L21/0262—Reduction or decomposition of gaseous compounds, e.g. CVD
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H01L33/0062—Processes for devices with an active region comprising only III-V compounds
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/26—Materials of the light emitting region
    • H01L33/30—Materials of the light emitting region containing only elements of Group III and Group V of the Periodic Table

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  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Materials Engineering (AREA)
  • Led Devices (AREA)

Abstract

＜１００＞方向を基準方向として、オフアングルが１０゜以上２０゜以下の主軸を有するＧａＡｓ単結晶基板１上に、２種以上のＩＩＩ族元素を含む（ＡｌｘＧａ１－ｘ）ｙＩｎ１－ｙＰ（ただし、０≦ｘ≦１，０＜ｙ≦１）にて構成される発光層部２４と、第一ＧａＰ層７ａとをこの順序にて有機金属気相成長法により形成し、第一ＧａＰ層７ａ上に第二ＧａＰ層７ｂ，７ｃをハイドライド気相成長法により形成する。第二ＧａＰ層７ｂ，７ｃは、第一成長速度による低速成長領域７ｂと、該第一成長速度よりも高い第二成長速度による高速成長領域７ｃとの２段成長とし、成長工程全体で１０μｍ／ｈｒ以上４０μｍ／ｈｒ以下にする。これにより、ハイドライド気相成長法を用いて厚い窓層を形成する際に発生するヒロックの高さが抑制された化合物半導体エピタキシャルウェーハと、その製造方法を提供する。
PCT/JP2008/068229 2007-10-10 2008-10-07 化合物半導体エピタキシャルウェーハおよびその製造方法 WO2009048056A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2009536997A JP5071484B2 (ja) 2007-10-10 2008-10-07 化合物半導体エピタキシャルウェーハおよびその製造方法
CN2008801090440A CN101809769B (zh) 2007-10-10 2008-10-07 化合物半导体外延晶片及其制造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007264404 2007-10-10
JP2007-264404 2007-10-10

Publications (1)

Publication Number Publication Date
WO2009048056A1 true WO2009048056A1 (ja) 2009-04-16

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PCT/JP2008/068229 WO2009048056A1 (ja) 2007-10-10 2008-10-07 化合物半導体エピタキシャルウェーハおよびその製造方法

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Country Link
JP (1) JP5071484B2 (ja)
KR (1) KR101476143B1 (ja)
CN (1) CN101809769B (ja)
WO (1) WO2009048056A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016034036A (ja) * 2009-06-30 2016-03-10 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー Ｉｉｉ−ｐ半導体発光デバイスのｐコンタクト層

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN103811626A (zh) * 2012-11-12 2014-05-21 天津中环新光科技有限公司 带有高反射率金属反射层的红光发光二极管及制备方法
CN113363338A (zh) * 2021-06-02 2021-09-07 中国电子科技集团公司第四十六研究所 一种在GaAs衬底上生长GaInP薄膜的方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001053386A (ja) * 1999-08-16 2001-02-23 Ricoh Co Ltd 半導体レーザ素子
JP2004179613A (ja) * 2002-05-17 2004-06-24 Shin Etsu Handotai Co Ltd 発光素子の製造方法及び発光素子
JP2005136271A (ja) * 2003-10-31 2005-05-26 Sharp Corp 半導体発光素子及びその製造方法
WO2007114033A1 (ja) * 2006-03-31 2007-10-11 Shin-Etsu Handotai Co., Ltd. 発光素子の製造方法、化合物半導体ウェーハ及び発光素子

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW417315B (en) * 1998-06-18 2001-01-01 Sumitomo Electric Industries GaN single crystal substrate and its manufacture method of the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001053386A (ja) * 1999-08-16 2001-02-23 Ricoh Co Ltd 半導体レーザ素子
JP2004179613A (ja) * 2002-05-17 2004-06-24 Shin Etsu Handotai Co Ltd 発光素子の製造方法及び発光素子
JP2005136271A (ja) * 2003-10-31 2005-05-26 Sharp Corp 半導体発光素子及びその製造方法
WO2007114033A1 (ja) * 2006-03-31 2007-10-11 Shin-Etsu Handotai Co., Ltd. 発光素子の製造方法、化合物半導体ウェーハ及び発光素子

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2016034036A (ja) * 2009-06-30 2016-03-10 フィリップス ルミレッズ ライティング カンパニー リミテッド ライアビリティ カンパニー Ｉｉｉ−ｐ半導体発光デバイスのｐコンタクト層
JP2017118150A (ja) * 2009-06-30 2017-06-29 ルミレッズ リミテッド ライアビリティ カンパニー Ｉｉｉ−ｐ半導体発光デバイスのｐコンタクト層

Also Published As

Publication number Publication date
JPWO2009048056A1 (ja) 2011-02-17
CN101809769A (zh) 2010-08-18
KR101476143B1 (ko) 2014-12-24
CN101809769B (zh) 2011-12-14
KR20100063058A (ko) 2010-06-10
JP5071484B2 (ja) 2012-11-14

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