WO2009046576A1 - Dispositif électroluminescent à semi-conducteurs à structure de conversion de couleur - Google Patents

Dispositif électroluminescent à semi-conducteurs à structure de conversion de couleur Download PDF

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Publication number
WO2009046576A1
WO2009046576A1 PCT/CN2007/002945 CN2007002945W WO2009046576A1 WO 2009046576 A1 WO2009046576 A1 WO 2009046576A1 CN 2007002945 W CN2007002945 W CN 2007002945W WO 2009046576 A1 WO2009046576 A1 WO 2009046576A1
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WO
WIPO (PCT)
Prior art keywords
color
substrate
light
conversion layer
multilayer structure
Prior art date
Application number
PCT/CN2007/002945
Other languages
English (en)
Inventor
Li Wang
Fengyi Jiang
Yingwen Tang
Weihua Liu
Original Assignee
Lattice Power (Jiangxi) Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Lattice Power (Jiangxi) Corporation filed Critical Lattice Power (Jiangxi) Corporation
Priority to PCT/CN2007/002945 priority Critical patent/WO2009046576A1/fr
Priority to CN2007801010418A priority patent/CN101849295B/zh
Publication of WO2009046576A1 publication Critical patent/WO2009046576A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material

Definitions

  • the present invention generally relates to the design and manufacturing of semiconductor light-emitting devices. More specifically, the present invention relates to designs and techniques for manufacturing a semiconductor light-emitting device with a color-conversion structure.
  • HB-LEDs high-brightness light-emitting diodes
  • LED traffic lights true-color display devices
  • replacement for light-bulbs in conventional lighting.
  • white-light LEDs have opened the door to broader applications of
  • One embodiment of the present invention provides a semiconductor light- emitting device.
  • the device includes a substrate and a semiconductor multilayer structure supported by the substrate, wherein the semiconductor multilayer structure is configured to emit light of a first color.
  • the substrate or a layer between the substrate and the mutilayer structure is substantially opaque.
  • the device also includes a planar color-conversion layer of a substantially constant thickness formed on the semiconductor multilayer structure, wherein the color- conversion layer comprises a color-conversion material capable of converting at least a portion of the emitted light to a second color.
  • the color-conversion layer can be sufficiently hardened to withstand subsequent wafer dicing.
  • the substrate comprises one or more of the following materials: silicon (Si); germanium (Ge); gallium arsenide (GaAs); and metal.
  • the transmittance of the substrate with respect to the first color is less than or equal to 30%.
  • the layer between the substrate and the multilayer structure is a light reflection layer between the semiconductor multilayer structure and the substrate.
  • the color-conversion layer includes a dispersion medium which is used to uniformly disperse the color-conversion material.
  • the dispersion medium includes one or more of: a polyimide-based material; a silicone-based material; and an epoxy resin-based material.
  • the dispersion medium is polyimide.
  • the color-conversion material includes fluorescent powder.
  • the color-conversion layer comprises a mixture of a polyimide-based dispersion medium and phosphor.
  • the device includes at least one electrode formed on the semiconductor multilayer structure, wherein at least a portion of the electrode surface is not covered by the color-conversion layer.
  • the semiconductor multilayer structure comprises InxGayAll-x-yN (0 ⁇ x ⁇ l, 0 ⁇ y ⁇ l)-based materials.
  • the combination of the converted and unconverted light produces a substantially white color.
  • FIG. 1 illustrates a structure of a white light LED.
  • FIG. 2A illustrates a white-light LED chip comprising a planar color-conversion layer in accordance with one embodiment of the present invention.
  • FIG. 2B illustrates a white-light LED chip comprising a light reflection layer in accordance with one embodiment of the present invention
  • FIG. 3 presents a flowchart illustrating the process of patterning electrodes on a color-conversion LED in accordance with one embodiment of the present invention.
  • FIG. 4 illustrates an exemplary step-by-step process of fabricating LEDs with a color-conversion structure through a "flip-chip" style wafer bonding process in accordance with one embodiment of the present invention.
  • White-light LEDs are typically based on a design that uses one or more types of fluorescent powders (e.g., phosphor) to surround the emitting surface of a light-emitting device, such as a GaN-based blue LED. As the blue light emits through the fluorescent powder, a portion of the blue light is converted to longer-wavelength light by the fluorescent powder through a fluorescence process, resulting in yellow, red, or green light. When light at these new colors mixes with the unconverted blue light, white light emission can be created.
  • FIG. 1 illustrates a typically structure of a white light LED 100.
  • white light LED 100 includes an InGaAlN-based semiconductor light-emitting structure 102 fabricated on a sapphire substrate 104.
  • Semiconductor light-emitting structure 102 and sapphire substrate 104 form an InGaAlN-based LED chip 106.
  • sapphire substrate 104 is transparent, the emitted light can transmit through both the top surface of LED chip 106, and from the sidewalls and bottom surface. Consequently, to obtain uniform white-light emission, it is desirable to enclose LED chip 106 with fluorescent powder uniformly with regard to both the top surface and the sidewalls of the LED chip 106.
  • LED chip 106 is "buried" inside a cup-shaped recess filled with a fluorescent powder mixture 108, which is typically made of fluorescent powder uniformly dispersed in an epoxy resin carrier. Consequently, fluorescent powder mixture 108 surrounds the top surface and all four sides of LED chip 106 to form white-light LED structure 100.
  • this white-light LED structure is typically obtained by first placing LED chip 106 at the bottom of a cup-shaped recess, and subsequently depositing a drop of fluorescent powder mixture 108 into the recess until the mixture fills above the surface of the recess (i.e., above the dashed line).
  • the round top 110 of fluorescent powder mixture 108 is desirable for compensating for light-path differences between light emitted through the middle and emitted around the edge of the device.
  • the mixture is typically applied onto the LEDs during individual chip packaging process after the wafer dicing. Consequently, such a chip-based white-light LED manufacturing process is typically associated with high cost, low yield, and poor color uniformity.
  • the fluorescent-powder mixture is applied to individual LEDs, it is difficult to obtain the same geometry of the round top for device.
  • the non-uniform geometries of individual white-light LEDs can subsequently cause non-uniform color conversions. As a result, it is difficult to ensure color uniformity of an array of such white-light LEDs, even if they are manufactured from the same wafer.
  • the geometry of the fluorescent powder mixture 108 and LED chip 106 can lead to differences in the light paths of light emitted from the top surface and from the sidewalls.
  • light beam 112 which leaks through the sidewall, can travel a significantly longer distance through fluorescent powder mixture 108 than light beam 114, which is emitted from the top surface.
  • the amount of conversion incurred to light beams 112 and 114 is different, which give rise to different color mixing as they exit fluorescent powder mixture 108.
  • emission from white light LED 100 can display more blue color in the center region and more yellow color toward the edge, creating a non-uniform emission pattern.
  • Embodiments of the present invention provide an LED design with a planar color-conversion structure. Specifically, an LED is formed on a substrate that is substantially opaque with respect to the light emitted by the LED. A color-conversion structure of substantially constant thickness is subsequently formed on the semiconductor LED. Furthermore, embodiments of the present invention provide a technique for manufacturing color-conversion LEDs which can produce light with a highly uniform color while achieving a significantly lower manufacturing cost in comparison with conventional white-light LEDs. More specifically, the color-conversion structure is fabricated on the LED during the wafer-level fabrication process instead of being fabricated on each LED after wafer dicing.
  • FIG. 2A illustrates a white-light LED chip 200 that includes a planar color- conversion layer in accordance with one embodiment of the present invention.
  • White-light LED 200 includes a substrate 202 and a semiconductor multilayer structure 204 formed on substrate 202.
  • semiconductor multilayer structure 204 is a semiconductor light-emitting structure comprising an active layer "sandwiched" between an upper layer and a lower layer.
  • the upper layer or the lower layer can include additional layers, such as an n-type or p-type doped cladding layer and/or a buffer layer.
  • a cladding layer can include one or more layers of material, although "cladding layer" as used in some literature refers only to a doped layer immediately adjacent to the active layer.
  • the upper layer can include an n-type layer
  • the lower layer can include a p- type layer.
  • a layer in the semiconductor multilayer structure 204 is composed of InxGayAll-x-yN (O ⁇ x ⁇ l. O ⁇ y ⁇ l)-based materials, which can include a binary, ternary, or quaternary compound, such as GaN, InGaN 3 GaAlN 5 and InGaAlN.
  • substrate 202 is substantially opaque with respect to the emission color of semiconductor multilayer structure 204. In one embodiment, substrate 202 exhibits a transmittance of less than or equal to 30% with respect to the emission color of multilayer structure 204. In a further embodiment, substrate 202 is opaque to the emitted light from multilayer structure 204. This prevents light from leaking out of sidewalls of substrate 202 . As is discussed below, such light leakage is undesirable to the proposed white-light LED because the leaking light cannot be converted by color-conversion material.
  • Substrate 202 can include, but is not limited to, a silicon (Si) substrate, a germanium (Ge) substrate, a gallium arsenide (GaAs) substrate, and other opague semiconductor materials. These semiconductor substrates are typically non-transparent to visible wavelengths. In particular, using the Si substrate can facilitate low-cost and high-flexibility manufacturing. In a further embodiment, substrate 202 can include metal substrates, such as an alunimium (Al) substrate. In particular, it may be desirable to use substrates having high thermal conductivities for fabricating high-power level LEDs, such as a copper (Cu) substrate.
  • Si silicon
  • Ge germanium
  • GaAs gallium arsenide
  • Cu copper
  • White-light LED 200 further includes a color-conversion layer 206 formed on semiconductor multilayer structure 204, which has a substantially constant thickness.
  • color-conversion layer 206 includes a color-conversion material uniformly dispersed in a medium, such as epoxy resin.
  • color- conversion layer 206 is formed by spin-coating a colloid mixture of color-conversion material (e.g., fluorescent power) and epoxy resin over semiconductor multilayer structure 204, and curing the mixture to obtain a hardened color-conversion layer. Note that this deposition technique facilitates obtaining the color-conversion layer with a uniform thickness over the device surface.
  • color-conversion layer 206 is a thin film layer.
  • the individual devices are fabricated on a patterned substrate which provides a number of mesas separated by grooves. Coating of the color-conversion material can be performed after the devices are fabricated, and optionally after the edges of each device have been removed, so that the coating can cover the sidewalls of the devices are also covered. This way, the light leakage can be further reduced.
  • Embodiments of the present invention can use different types of dispersion media as carriers for the color-conversion material.
  • These dispersion media can include, but are not limited to, silicone, epoxy resin, polyimide, and other curable polymerized materials.
  • silicone has high thermal and chemical stability but is typically associated with higher cost.
  • epoxy resin is inexpensive but can be less stable.
  • both silicone and epoxy resin become extremely difficult to etch after they have been cured, and hence are less desirable.
  • Polyimide on the other hand, can become sufficiently hardened but can still be etched by an alkali based etchant after being cured at a relatively low temperature. This property makes polyimide more compatible with the photolithographic process.
  • the section below describes a photolithography process for fabricating electrodes for white-light LEDs while polyimide is used as the dispersion medium.
  • the color-conversion material can convert a portion of the emitted light from a first color (e.g., blue) to a second color (e.g., yellow) while transmitting the rest of the unconverted light.
  • this color-conversion material is a fluorescent powder, such as YAG phosphor or TAG phosphor. These types of fluorescent materials, when excited by blue light, can reemit yellow light, which then recombines with the unconverted blue light to create a substantially white color.
  • the color-conversion material can include other types of fluorescent powder such as silicate phosphor.
  • the colors produced by color-conversion layer 206 can include, but are not limited to, green, yellow, orange, red, or a mixture of multiple colors.
  • the color-conversion material can include a mixture of different types of fluorescent materials corresponding to multiple colors. Note that because color-conversion layer 206 has a substantially constant thickness across the chip surface, the LED chip can produce highly uniform color. [0036] Referring back to FIG. 2A, white-light LED 200 also includes electrodes 208.
  • electrodes 208 are coupled to the top layer of semiconductor multilayer structure 204 though an ohmic contact.
  • color-conversion layer 206 is non-conductive. Consequently, it is not desirable to fabricate electrodes 208 directly on color-conversion layer 206 or to cover the surface of electrodes 208 with color-conversion layer 206.
  • additional electrodes can be fabricated on the backside of substrate 202.
  • color-conversion layer 206 can be patterned to create spaces for the electrodes.
  • the electrodes and optionally the corresponding bonded wires can be manufactured on the devices prior to the coating of color-conversion material. This way, good ohmic contacts between the electrode and device can be ensured.
  • FIG. 2B illustrates a white-light LED chip 210 which includes a light reflection layer 212 in accordance with one embodiment of the present invention.
  • chip 210 has a substantially the same structure as chip 200 except that chip 210 additionally includes a light reflection layer 212 formed between substrate 202 and semiconductor multilayer structure 204.
  • FIG. 2A because substrate 202 is associated with a very low transmittance to the light emitted from multilayer structure 204, a large fraction of the emitted light can be absorbed by substrate 202. This light absorption can reduce light-emission efficiency.
  • light reflection layer is a silver (Ag) layer.
  • white- light LEDs 200 and 210 are obtained by dicing a post fabrication wafer which includes substrate 202, multilayer structure 204, color-conversion layer 206, and electrodes 208 into individual LED chips. Note that because color-conversion layer 206 is deposited prior to wafer dicing, the sidewalls of multilayer structure 204 and substrate 206 can be free of the color-conversion material.
  • a white-light LED is used as an example for illustrating the inventive structures of color-converting LEDs
  • the present invention is applicable to any semiconductor LEDs capable of converting an emission color into another color.
  • FIG. 3 presents a flowchart illustrating the process of patterning electrodes on a color-conversion LED in accordance with one embodiment of the present invention.
  • the system receives a wafer with a light-emitting multilayer structure that has been fabricated without the electrodes (operation 302).
  • the system then deposits a colloidal mixture of fluorescent powder and polyimide on the light-emitting multilayer structure to form a color-conversion layer, wherein the fluorescent powder is uniformly dispersed within the polyimide (operation 304).
  • the system deposits the colloid on the wafer using a spin-coating process to obtain a uniform thickness of the color-conversion layer on the wafer. Note that this spin-coating operation can be similar to the process of coating photoresist (PR) during a photolithography process. Other techniques, such as spray coating, can also be used to coat the colloid mixture.
  • PR photoresist
  • the system pre-cures the colloidal color-conversion layer so that the polyimide becomes partially cured (operation 306).
  • the pre-curing can be performed at a temperature lower than the normal curing temperature and/or for a shorter curing time than a full-curing process to partially remove the solvent carrier from the colloid mixture.
  • the color-conversion layer becomes sufficiently hardened but is still etchable by an alkali etchant.
  • the system next applies a PR (e.g., a positive PR) layer over the color-conversion layer and performs a photolithography process on the PR layer to pattern the electrodes on the color-conversion layer (operation 308).
  • a PR e.g., a positive PR
  • the PR is then developed with a developer to form the electrode regions in the color-conversion layer (operation 310). Note that this developing process not only removes the exposed PR but also etches away the underlying pre-cured color- conversion layer in the corresponding regions for the electrodes, thereby exposing the light- emitting multilayer structure underneath.
  • the developer is a TMAH-based developer. Note that if some embodiments, the electrodes can be first fabricated on the devices, and the contact wires can be bonded to the electrodes prior to the deposition of the color-conversion layer.
  • FIG. 4 illustrates an exemplary step-by-step process of fabricating LEDs with a color-conversion structure through a "flip-chip" style wafer bonding process in accordance with one embodiment of the present invention.
  • an original silicon growth substrate 402 is patterned and etched to produce a number of mesas separated by trenches. Each mesa defines the surface area for growing a single LED.
  • a partitioned substrate can effectively reduce in-plane stresses because the stress force is proportional to surface area. Note that in Operation A of FIG. 4, only one full mesa (in the middle) and two partial mesas (on each side) are illustrated.
  • semiconductor multilayer structures 404 are epitaxially formed above the substrate mesas. Note that in one embodiment, the mesas are sufficiently apart and the trenches are sufficiently deep so that the epitaxial growth of different layers does not create any attachment between two individual structures, thereby significantly reducing the stress associated with lattice-mismatched growth.
  • multilayer structures 404 are InxGayAll-x-yN (0 ⁇ x ⁇ l, 0 ⁇ y ⁇ l)-based semiconductor multilayer structures.
  • a bonding-layer 406 is deposited above multilayer structures 404.
  • one embodiment of the present invention optionally forms an insulating layer over multilayer structure 404 prior to depositing metal bonding-layer 406.
  • metals or non-metal materials suitable as a bonding material can be used.
  • gold is used as the bonding material.
  • new support-structure 408 is attached and adhered to gold bonding-layer 406.
  • new support-structure 408 is a silicon substrate.
  • new support-structure 408 can be a Ge-substrate, a GaAs substrate, or a metal substrate.
  • Operation E the original silicon growth substrate 402 is removed using a wet etching process. As a result, the underside of multilayer structures 404 is exposed. Note that the entire structure has been flipped over in Operation E and multilayer structures 404 are supported by gold bonding-layer 406 and new support-structure 408. Also note that gold bonding-layer 406 can serve as a light reflection layer.
  • a color-conversion layer 410 is deposited over multilayer structures 404.
  • color-conversion layer 410 is obtained by first coating the surface of multilayer structures 404 with fluorescent powder uniformly dispersed in a polyimide carrier, and then curing the polyimide into a hardened polymer layer. Note that prior to the final curing of the color-conversion layer 410, one or more electrodes can be fabricated on the multilayer structures 404 as is described above.
  • wafer in Operation F is diced to obtain individual color conversion LEDs.
  • wafer dicing can be performed from the top side of the wafer by going through the partition trenches, or alternatively from the backside of the wafer.
  • non-partitioned substrate can also be used to fabricate color conversion LEDs following the same Operations A to F.

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Led Device Packages (AREA)

Abstract

L'invention concerne un dispositif électroluminescent à semi-conducteurs (200) comprenant un substrat (202) et une structure multicouche à semi-conducteurs (204) supportée par le substrat (202), la structure multicouche à semi-conducteurs (204) étant configurée pour émettre une lumière d'une première couleur. Le substrat (202) ou une couche réfléchissante (212) entre le substrat (202) et la structure multicouche à semi-conducteurs (204) est sensiblement opaque. Le dispositif (200) comprend également une couche de conversion de couleur plane (206) d'une épaisseur sensiblement constante formée sur la structure multicouche à semi-conducteurs (204). La couche de conversion de couleur (206) comprend un matériau de conversion de couleur capable de convertir au moins une partie de la lumière émise en une seconde couleur. La couche de conversion de couleur (206) peut être suffisamment durcie pour supporter le quadrillage ultérieur d'une tranche en puces.
PCT/CN2007/002945 2007-10-12 2007-10-12 Dispositif électroluminescent à semi-conducteurs à structure de conversion de couleur WO2009046576A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
PCT/CN2007/002945 WO2009046576A1 (fr) 2007-10-12 2007-10-12 Dispositif électroluminescent à semi-conducteurs à structure de conversion de couleur
CN2007801010418A CN101849295B (zh) 2007-10-12 2007-10-12 一种制造半导体发光器件的方法

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PCT/CN2007/002945 WO2009046576A1 (fr) 2007-10-12 2007-10-12 Dispositif électroluminescent à semi-conducteurs à structure de conversion de couleur

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011042325A1 (fr) * 2009-10-06 2011-04-14 Osram Opto Semiconductors Gmbh Mise en contact d'un composant semi-conducteur optoélectronique par un élément de conversion, et composant semi-conducteur optoélectronique correspondant
CN113410170A (zh) * 2021-06-16 2021-09-17 武汉新芯集成电路制造有限公司 提高拣片效率的方法、三维集成芯片的制造方法及芯片

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10209505A (ja) * 1997-01-17 1998-08-07 Stanley Electric Co Ltd 発光ダイオードおよびその製造方法
JPH10261818A (ja) * 1997-03-19 1998-09-29 Fujitsu Ltd 発光半導体装置
CN1988188A (zh) * 2005-12-23 2007-06-27 香港应用科技研究院有限公司 具有荧光层结构的发光二极管晶粒及其制造方法
JP2007243053A (ja) * 2006-03-10 2007-09-20 Matsushita Electric Works Ltd 発光装置の製造方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100364121C (zh) * 2004-09-10 2008-01-23 晶元光电股份有限公司 半导体发光元件及其制造方法
US7195944B2 (en) * 2005-01-11 2007-03-27 Semileds Corporation Systems and methods for producing white-light emitting diodes
DE102005062514A1 (de) * 2005-09-28 2007-03-29 Osram Opto Semiconductors Gmbh Optoelektronisches Bauelement

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10209505A (ja) * 1997-01-17 1998-08-07 Stanley Electric Co Ltd 発光ダイオードおよびその製造方法
JPH10261818A (ja) * 1997-03-19 1998-09-29 Fujitsu Ltd 発光半導体装置
CN1988188A (zh) * 2005-12-23 2007-06-27 香港应用科技研究院有限公司 具有荧光层结构的发光二极管晶粒及其制造方法
JP2007243053A (ja) * 2006-03-10 2007-09-20 Matsushita Electric Works Ltd 発光装置の製造方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011042325A1 (fr) * 2009-10-06 2011-04-14 Osram Opto Semiconductors Gmbh Mise en contact d'un composant semi-conducteur optoélectronique par un élément de conversion, et composant semi-conducteur optoélectronique correspondant
US8841159B2 (en) 2009-10-06 2014-09-23 Osram Opto Semiconductors Gmbh Contacting an optoelectronic semiconductor component through a conversion element and corresponding optoelectronic semiconductor component
US9362466B2 (en) 2009-10-06 2016-06-07 Osram Opto Semiconductors Gmbh Contacting an optoelectronic semiconductor component through a conversion element and corresponding optoelectronic semiconductor component
CN113410170A (zh) * 2021-06-16 2021-09-17 武汉新芯集成电路制造有限公司 提高拣片效率的方法、三维集成芯片的制造方法及芯片
CN113410170B (zh) * 2021-06-16 2023-12-08 武汉新芯集成电路制造有限公司 提高拣片效率的方法、三维集成芯片的制造方法及芯片

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