WO2009034898A1 - 成膜装置及び成膜方法 - Google Patents

成膜装置及び成膜方法 Download PDF

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Publication number
WO2009034898A1
WO2009034898A1 PCT/JP2008/065883 JP2008065883W WO2009034898A1 WO 2009034898 A1 WO2009034898 A1 WO 2009034898A1 JP 2008065883 W JP2008065883 W JP 2008065883W WO 2009034898 A1 WO2009034898 A1 WO 2009034898A1
Authority
WO
WIPO (PCT)
Prior art keywords
placing table
film forming
upper space
forming apparatus
vacuum
Prior art date
Application number
PCT/JP2008/065883
Other languages
English (en)
French (fr)
Inventor
Toshio Takagi
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2008078824A external-priority patent/JP5347294B2/ja
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Priority to KR1020097027644A priority Critical patent/KR101177192B1/ko
Priority to CN2008800226693A priority patent/CN101689500B/zh
Priority to US12/677,664 priority patent/US8506713B2/en
Publication of WO2009034898A1 publication Critical patent/WO2009034898A1/ja

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C23C16/45574—Nozzles for more than one gas

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

　載置台の載置面を加熱しながら、真空雰囲気下で、前記載置台に対向する処理ガス供給部から処理ガスを基板に供給することにより成膜処理を行う成膜装置において、前記載置台を基板が成膜処理される処理位置に昇降させるための昇降機構と、前記処理位置にある時の前記載置台を隙間を介して取り囲み、当該載置台と共に、前記真空容器内を、当該載置台よりも上方の上部空間と当該載置台よりも下方の下部空間とに区画する囲み部分と、前記上部空間に連通して、前記上部空間内の処理雰囲気を真空排気する真空排気路と、前記上部空間から前記真空排気路に至るまでのガスが接触する部位を、反応物が付着する温度よりも高い温度に加熱する加熱手段と、前記加熱手段と、前記下部空間を囲む前記真空容器の下側部分と、の間に設けられた断熱部と、を備えたことを特徴とする成膜装置である。
PCT/JP2008/065883 2007-09-12 2008-09-03 成膜装置及び成膜方法 WO2009034898A1 (ja)

Priority Applications (3)

Application Number Priority Date Filing Date Title
KR1020097027644A KR101177192B1 (ko) 2007-09-12 2008-09-03 성막 장치, 성막 방법 및 기억 매체
CN2008800226693A CN101689500B (zh) 2007-09-12 2008-09-03 成膜装置和成膜方法
US12/677,664 US8506713B2 (en) 2007-09-12 2008-09-03 Film deposition apparatus and film deposition method

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007237055 2007-09-12
JP2007-237055 2007-09-12
JP2008-078824 2008-03-25
JP2008078824A JP5347294B2 (ja) 2007-09-12 2008-03-25 成膜装置、成膜方法及び記憶媒体

Publications (1)

Publication Number Publication Date
WO2009034898A1 true WO2009034898A1 (ja) 2009-03-19

Family

ID=40451907

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065883 WO2009034898A1 (ja) 2007-09-12 2008-09-03 成膜装置及び成膜方法

Country Status (1)

Country Link
WO (1) WO2009034898A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120269968A1 (en) * 2011-04-21 2012-10-25 Kurt J. Lesker Company Atomic Layer Deposition Apparatus and Process
CN112542400A (zh) * 2019-09-20 2021-03-23 东京毅力科创株式会社 蚀刻装置和蚀刻方法
CN112585730A (zh) * 2018-09-05 2021-03-30 东京毅力科创株式会社 基片处理方法和基片处理装置

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01302816A (ja) * 1988-05-31 1989-12-06 Tel Sagami Ltd 縦型熱処理装置
JPH11158632A (ja) * 1997-07-22 1999-06-15 Ebara Corp 薄膜気相成長装置
JP2003231970A (ja) * 2002-02-08 2003-08-19 Hitachi Zosen Corp 基板処理装置および基板処理方法
WO2005113852A2 (en) * 2004-05-12 2005-12-01 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
JP2007059782A (ja) * 2005-08-26 2007-03-08 Tokyo Electron Ltd スペーサー部材およびプラズマ処理装置
JP2007142363A (ja) * 2005-10-18 2007-06-07 Tokyo Electron Ltd 処理装置

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH01302816A (ja) * 1988-05-31 1989-12-06 Tel Sagami Ltd 縦型熱処理装置
JPH11158632A (ja) * 1997-07-22 1999-06-15 Ebara Corp 薄膜気相成長装置
JP2003231970A (ja) * 2002-02-08 2003-08-19 Hitachi Zosen Corp 基板処理装置および基板処理方法
WO2005113852A2 (en) * 2004-05-12 2005-12-01 Applied Materials, Inc. Apparatuses and methods for atomic layer deposition
JP2007059782A (ja) * 2005-08-26 2007-03-08 Tokyo Electron Ltd スペーサー部材およびプラズマ処理装置
JP2007142363A (ja) * 2005-10-18 2007-06-07 Tokyo Electron Ltd 処理装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20120269968A1 (en) * 2011-04-21 2012-10-25 Kurt J. Lesker Company Atomic Layer Deposition Apparatus and Process
US9695510B2 (en) * 2011-04-21 2017-07-04 Kurt J. Lesker Company Atomic layer deposition apparatus and process
CN112585730A (zh) * 2018-09-05 2021-03-30 东京毅力科创株式会社 基片处理方法和基片处理装置
CN112585730B (zh) * 2018-09-05 2024-04-19 东京毅力科创株式会社 基片处理方法和基片处理装置
CN112542400A (zh) * 2019-09-20 2021-03-23 东京毅力科创株式会社 蚀刻装置和蚀刻方法

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