WO2009034822A1 - Appareil de traitement de substrat, procédé pour supprimer une contamination d'appareil de traitement de substrat, et support de stockage - Google Patents

Appareil de traitement de substrat, procédé pour supprimer une contamination d'appareil de traitement de substrat, et support de stockage Download PDF

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Publication number
WO2009034822A1
WO2009034822A1 PCT/JP2008/064981 JP2008064981W WO2009034822A1 WO 2009034822 A1 WO2009034822 A1 WO 2009034822A1 JP 2008064981 W JP2008064981 W JP 2008064981W WO 2009034822 A1 WO2009034822 A1 WO 2009034822A1
Authority
WO
WIPO (PCT)
Prior art keywords
processing apparatus
substrate processing
processing
substrate
transfer chamber
Prior art date
Application number
PCT/JP2008/064981
Other languages
English (en)
Japanese (ja)
Inventor
Tetsuya Miyashita
Toshiharu Hirata
Masamichi Hara
Original Assignee
Tokyo Electron Limited
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tokyo Electron Limited filed Critical Tokyo Electron Limited
Publication of WO2009034822A1 publication Critical patent/WO2009034822A1/fr

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67196—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the construction of the transfer chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/564—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases
    • C23C14/566—Means for minimising impurities in the coating chamber such as dust, moisture, residual gases using a load-lock chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/54—Apparatus specially adapted for continuous coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67109—Apparatus for thermal treatment mainly by convection
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67184—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the presence of more than one transfer chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Mechanical Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Organic Chemistry (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Chemical Vapour Deposition (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

L'invention concerne un appareil de traitement de substrat permettant de traiter un substrat qui doit être traité. L'appareil de traitement de substrat comprend des chambres de traitement (22, 23) pour traiter le substrat qui doit être traité ; une chambre de transfert (21), qui est raccordée aux chambres de traitement (22, 23) avec sa pression interne ajustable qui doit être appliquée à des pressions de traitement à l'intérieur des chambres de traitement (22, 23) ; un mécanisme de transfert (26), qui est agencé dans la chambre de transfert (21) pour transporter le substrat dans les chambres de traitement (22, 23) ou pour l'évacuer de celles-ci ; un mécanisme de chauffage (71) pour chauffer l'intérieur de la chambre de transfert (21) jusqu'à une température à laquelle un matériau déchargé des chambres de traitement (22, 23) n'adhère pas à l'intérieur de la chambre de transfert (21) ; et un mécanisme d'évacuation (54) pour vider l'intérieur de la chambre de transfert (21).
PCT/JP2008/064981 2007-09-10 2008-08-22 Appareil de traitement de substrat, procédé pour supprimer une contamination d'appareil de traitement de substrat, et support de stockage WO2009034822A1 (fr)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-233604 2007-09-10
JP2007233604A JP2009065068A (ja) 2007-09-10 2007-09-10 基板処理装置、基板処理装置の汚染抑制方法及び記憶媒体

Publications (1)

Publication Number Publication Date
WO2009034822A1 true WO2009034822A1 (fr) 2009-03-19

Family

ID=40451831

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064981 WO2009034822A1 (fr) 2007-09-10 2008-08-22 Appareil de traitement de substrat, procédé pour supprimer une contamination d'appareil de traitement de substrat, et support de stockage

Country Status (2)

Country Link
JP (1) JP2009065068A (fr)
WO (1) WO2009034822A1 (fr)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI532114B (zh) * 2009-11-12 2016-05-01 Hitachi High Tech Corp Vacuum processing device and operation method of vacuum processing device
KR101649356B1 (ko) * 2014-01-20 2016-08-18 주식회사 풍산 반도체 기판 처리장치
JP6457307B2 (ja) 2015-03-16 2019-01-23 東芝メモリ株式会社 半導体装置の製造方法、及び半導体製造装置
JP6558642B2 (ja) * 2016-08-26 2019-08-14 トヨタ自動車株式会社 プラズマ成膜方法
JP7221403B2 (ja) * 2019-09-05 2023-02-13 株式会社Kokusai Electric 基板処理装置、半導体装置の製造方法およびプログラム

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0982781A (ja) * 1995-09-18 1997-03-28 Kokusai Electric Co Ltd 半導体製造装置
JPH11260881A (ja) * 1998-03-06 1999-09-24 Tokyo Electron Ltd 処理装置
JP2002289668A (ja) * 2001-03-27 2002-10-04 Hitachi Kokusai Electric Inc 基板処理装置
JP2003224079A (ja) * 2002-01-31 2003-08-08 Shin Etsu Handotai Co Ltd 熱処理方法、熱処理装置およびシリコンエピタキシャルウェーハの製造方法
JP2007005435A (ja) * 2005-06-22 2007-01-11 Rorze Corp 処理装置
JP2007227626A (ja) * 2006-02-23 2007-09-06 Tokyo Electron Ltd 基板処理システム、基板処理方法、及び記憶媒体

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0982781A (ja) * 1995-09-18 1997-03-28 Kokusai Electric Co Ltd 半導体製造装置
JPH11260881A (ja) * 1998-03-06 1999-09-24 Tokyo Electron Ltd 処理装置
JP2002289668A (ja) * 2001-03-27 2002-10-04 Hitachi Kokusai Electric Inc 基板処理装置
JP2003224079A (ja) * 2002-01-31 2003-08-08 Shin Etsu Handotai Co Ltd 熱処理方法、熱処理装置およびシリコンエピタキシャルウェーハの製造方法
JP2007005435A (ja) * 2005-06-22 2007-01-11 Rorze Corp 処理装置
JP2007227626A (ja) * 2006-02-23 2007-09-06 Tokyo Electron Ltd 基板処理システム、基板処理方法、及び記憶媒体

Also Published As

Publication number Publication date
JP2009065068A (ja) 2009-03-26

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