WO2009032197A1 - Dispositifs de support d'article fabriquant un semi-conducteur en vitrocéramique et composite vitrocéramique/céramique - Google Patents

Dispositifs de support d'article fabriquant un semi-conducteur en vitrocéramique et composite vitrocéramique/céramique Download PDF

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Publication number
WO2009032197A1
WO2009032197A1 PCT/US2008/010253 US2008010253W WO2009032197A1 WO 2009032197 A1 WO2009032197 A1 WO 2009032197A1 US 2008010253 W US2008010253 W US 2008010253W WO 2009032197 A1 WO2009032197 A1 WO 2009032197A1
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WIPO (PCT)
Prior art keywords
glass
ceramic
article support
layer
comprised
Prior art date
Application number
PCT/US2008/010253
Other languages
English (en)
Inventor
Douglas M. Beall
Michael W. Linder
Marcus R. Serwazi
Lothar Wondraczek
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Corning Incorporated
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Publication date
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Publication of WO2009032197A1 publication Critical patent/WO2009032197A1/fr

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C10/00—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition
    • C03C10/0036—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents
    • C03C10/0045—Devitrified glass ceramics, i.e. glass ceramics having a crystalline phase dispersed in a glassy phase and constituting at least 50% by weight of the total composition containing SiO2, Al2O3 and a divalent metal oxide as main constituents containing SiO2, Al2O3 and MgO as main constituents
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C27/00—Joining pieces of glass to pieces of other inorganic material; Joining glass to glass other than by fusing
    • C03C27/06—Joining glass to glass by processes other than fusing
    • C03C27/10—Joining glass to glass by processes other than fusing with the aid of adhesive specially adapted for that purpose
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/04—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with articles made from glass
    • C04B37/045—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with articles made from glass characterised by the interlayer used
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B37/00—Joining burned ceramic articles with other burned ceramic articles or other articles by heating
    • C04B37/04—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with articles made from glass
    • C04B37/047—Joining burned ceramic articles with other burned ceramic articles or other articles by heating with articles made from glass by means of an interlayer consisting of an organic adhesive, e.g. phenol resin or pitch
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70691—Handling of masks or workpieces
    • G03F7/707—Chucks, e.g. chucking or un-chucking operations or structural details
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70808—Construction details, e.g. housing, load-lock, seals or windows for passing light in or out of apparatus
    • G03F7/70825—Mounting of individual elements, e.g. mounts, holders or supports
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/7095—Materials, e.g. materials for housing, stage or other support having particular properties, e.g. weight, strength, conductivity, thermal expansion coefficient
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/02—Aspects relating to interlayers, e.g. used to join ceramic articles with other articles by heating
    • C04B2237/12—Metallic interlayers
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/34—Oxidic
    • C04B2237/345—Refractory metal oxides
    • C04B2237/346—Titania or titanates
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/361—Boron nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/365—Silicon carbide
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/366—Aluminium nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/30—Composition of layers of ceramic laminates or of ceramic or metallic articles to be joined by heating, e.g. Si substrates
    • C04B2237/32—Ceramic
    • C04B2237/36—Non-oxidic
    • C04B2237/368—Silicon nitride
    • C—CHEMISTRY; METALLURGY
    • C04—CEMENTS; CONCRETE; ARTIFICIAL STONE; CERAMICS; REFRACTORIES
    • C04B—LIME, MAGNESIA; SLAG; CEMENTS; COMPOSITIONS THEREOF, e.g. MORTARS, CONCRETE OR LIKE BUILDING MATERIALS; ARTIFICIAL STONE; CERAMICS; REFRACTORIES; TREATMENT OF NATURAL STONE
    • C04B2237/00—Aspects relating to ceramic laminates or to joining of ceramic articles with other articles by heating
    • C04B2237/50—Processing aspects relating to ceramic laminates or to the joining of ceramic articles with other articles by heating
    • C04B2237/62—Forming laminates or joined articles comprising holes, channels or other types of openings

Definitions

  • the present invention relates to a lithographic apparatus comprising an article support configured to support an article to be placed in a beam path of radiation of the lithographic apparatus. More particularly, the invention relates to a glass-ceramic and layered glass-ceramic/ceramic article support structures.
  • a lithographic apparatus is a machine that applies a desired pattern onto a substrate, usually onto a target portion of the substrate.
  • a lithographic apparatus can be used, for example, in the manufacture of integrated circuits (ICs).
  • a patterning structure which is alternatively referred to as a mask or a reticle, may be used to generate a circuit pattern to be formed on an individual layer of the IC.
  • This pattern can be transferred onto a target portion (e.g. comprising part of, one, or several dies) on a substrate (e.g. a silicon wafer). Transfer of the pattern is typically via imaging onto a layer of radiation- sensitive material (resist) provided on the substrate.
  • a single substrate will contain a network of adjacent target portions that are successively patterned.
  • lithographic apparatus include so-called steppers, in which each target portion is irradiated by exposing an entire pattern onto the target portion at one time, and so-called scanners, in which each target portion is irradiated by scanning the pattern through a radiation beam in a given direction (the "scanning"-direction) while synchronously scanning the substrate parallel or anti-parallel to this direction. It is also possible to transfer the pattern from the patterning structure to the substrate by imprinting the pattern onto the substrate.
  • an article to be placed in the radiation beam is held to an article support, for example, by a clamping electrode, by vacuum suction or otherwise.
  • Electrostatic clamping may be used for example when a substrate is processed in vacuum conditions. This type of processing occurs for instance when the type of irradiation used for photolithographic processes is in the (soft) x-ray region, also referred to as the extreme ultraviolet (EUV) region.
  • EUV extreme ultraviolet
  • article supports are typically made from a variety of rigid materials, including for instance materials such as ULE® glass, Zerodur glass-ceramic, Cordierite ceramic or Sapphire crystalline material, as well as rigid ceramic and crystalline materials. These materials are chosen among others for good mechanical stability and heat conductivity and reduced thermal expansion properties.
  • the cordierite ceramic, Zerodur glass-ceramic and ULE® glass materials have good thermal characteristics in that they have a coefficient of thermal expansion (CTE) of practically zero.
  • CTE coefficient of thermal expansion
  • the wear characteristics of these materials are such that the economic lifetime of article support made from those materials is significantly limited in comparison with other materials that are known, such as SiSiC or SiC, but which possess less favorable thermal expansion characteristics.
  • i ne a ⁇ icie suppo ⁇ or nan ⁇ nng material comprises a giass-ceramic material which exhibits a fracture toughness greater than 1.5 MPa/m 1/2 , a thermal expansion of less than 1.Ox 10 "6 K '1 , a thermal conductivity greater than about 3.5 W/(m K), an elastic modulus of greater than 120 GPa, a high elastic-to-density ratio in excess of 40 GPa g/cm 3 and a thermal stability coefficient ⁇ 0.25.
  • this glass-ceramic material is a cordierite glass-ceramic material.
  • the top layer is comprised of glass-ceramic material layer wherein the material exhibits a fracture toughness greater than 1.5 MPa/m 1/2 , a coefficient of thermal expansion of less than 1.0 ⁇ l 0 '6 K “1 , a thermal conductivity greater than about 3.5 W/(m-K), an elastic modulus of greater than 120 GPa and a high elastic-to-density ratio in excess of 40 GPa-g/cm 3 and a thermal stability coefficient ⁇ 0.25.
  • the middle layer is comprised of a honeycomb ceramic material while the bottom layer comprises a glass- ceramic material layer. In one embodiment this bottom glass-ceramic layer is exhibits the same or similar properties as that exhibited by the top layer and thus is comprised of the same cordierite glass-ceramic material.
  • the "article” may be any of a substrate (e.g., a wafer), a patterning structure (e.g., a reticle or mask), or any other article (e.g., optical element) that is held in the radiation path of a radiation system, and more specifically may be a substrate to be processed in manufacturing devices employing lithographic projection techniques and/or a lithographic projection mask or mask blank for use in a lithographic projection apparatus, a mask handling apparatus such as mask inspection or cleaning apparatus, or a mask manufacturing apparatus
  • FIG. 1 depicts a lithographic apparatus according to an embodiment of the invention.
  • FIG. 2 schematically illustrates an alternative design of an article support according to an embodiment of the invention.
  • FIG. 3 schematically illustrates one embodiment of the honeycomb layer portion of the alternative design article support
  • FIG. 4 schematically illustrates a second embodiment of the honeycomb layer portion of the alternative design article support.
  • FIG. 1 schematically depicts a lithographic apparatus which incorporates the article support invention described herein.
  • the lithographic apparatus comprises the following features: (1) an illumination system (illuminator) IL configured to condition a radiation beam B (e.g. UV radiation or EUV radiation); (2) a support structure (e.g. a mask table) MT constructed to support a patterning structure (e.g. a mask) MA and connected to a first positioner/stage PM configured to accurately position the patterning structure in accordance with certain parameters; (3) a substrate table (e.g. a wafer table) WT constructed to hold a substrate (e.g. a resist-coated wafer) W and connected to a second positioner/stage PW configured to accurately position the substrate in accordance with certain parameters; and, (4) a projection system (e.g. a refractive projection lens system) PS configured to project a pattern imparted to the radiation beam B by patterning structure MA onto a target portion C (e.g. comprising one or more dies) of the substrate W.
  • a radiation beam B e.g. UV radiation or EUV radiation
  • the illumination system may include various types of optical components, such as refractive, reflective, magnetic, electromagnetic, electrostatic or other types of optical components, or any combination thereof, for directing, shaping, or controlling radiation.
  • the support structure holds the patterning structure in a manner that depends on the orientation of the patterning structure, the design of the lithographic apparatus, and other conditions, such as tor example whether or not the patterning structure is hei ⁇ in a vacuum environment.
  • the support structure can use mechanical, vacuum, electrostatic or other clamping techniques to hold the patterning structure.
  • the support structure may be a frame or a table, for example, which may be fixed or movable as required.
  • the support structure may ensure that the patterning structure is at a desired position, for example with respect to the projection system. Any use of the terms "reticle” or “mask” herein may be considered synonymous with the more general term "patterning structure.”
  • patterning structure used herein should be broadly interpreted as referring to any device that can be used to impart a radiation beam with a pattern in its cross- section such as to create a pattern in a target portion of the substrate. It should be noted that the pattern imparted to the radiation beam may not exactly correspond to the desired pattern in the target portion of the substrate, for example if the pattern includes phase-shifting features or so called assist features. Generally, the pattern imparted to the radiation beam will correspond to a particular functional layer in a device being created in the target portion, such as an integrated circuit.
  • the patterning structure may be transmissive or reflective.
  • Examples of patterning structures include masks, programmable mirror arrays, and programmable LCD panels.
  • Masks are well known in lithography, and include mask types such as binary, alternating phase-shift, and attenuated phase-shift, as well as various hybrid mask types.
  • An example of a programmable mirror array employs a matrix arrangement of small mirrors, each of which can be individually tilted so as to reflect an incoming radiation beam in different directions. The tilted mirrors impart a pattern in a radiation beam which is reflected by the mirror matrix.
  • projection system used herein should be broadly interpreted as encompassing any type of projection system, including refractive, reflective, catadioptric, magnetic, electromagnetic and electrostatic optical systems, or any combination thereof, as appropriate for the exposure radiation being used, or for other factors such as the use of an immersion liquid or the use of a vacuum. Any use of the term “projection lens” herein may be considered as synonymous with the more general term “projection system”.
  • the apparatus is of a reflective type (e.g. employing a reflective mask).
  • the apparatus may be of a transmissive type (e.g. employing a transmissive mask).
  • the lithographic apparatus may be of a type having two (dual stage) or more substrate tables (and/or two or more support structures). In such "multiple stage" machines the additional tables may be used in parallel, or preparatory steps may be carried out on one or more tables while one or more other tables are being used for exposure.
  • the lithographic apparatus may also be of a type wherein at least a portion of the substrate may be covered by a liquid having a relatively high refractive index, e.g. water, so as to fill a space between the projection system and the substrate.
  • An immersion liquid may also be applied to other spaces in the lithographic apparatus, for example, between the mask and the projection system. Immersion techniques are well known in the art for increasing the numerical aperture of projection systems.
  • the illuminator DL receives a radiation beam from a radiation source SO.
  • the source and the lithographic apparatus may be separate entities, for example when the source is an excimer laser. In such cases, the source is not considered to form part of the lithographic apparatus and the radiation beam is passed from the source SO to the illuminator IL with the aid of a beam delivery system BD comprising, for example, suitable directing mirrors and/or a beam expander. In other cases the source may be an integral part of the lithographic apparatus, for example when the source is mercury lamp.
  • the source SO and the illuminator IL, together with the beam delivery system BD if required, may be referred to as a radiation system.
  • the illuminator IL may comprise an adjuster AD for adjusting the angular intensity distribution of the radiation beam.
  • an adjuster AD for adjusting the angular intensity distribution of the radiation beam.
  • the illuminator IL may comprise various other components, such as an integrator IN and a condenser CO.
  • the illuminator may be used to condition the radiation beam, to have a desired uniformity and intensity distribution in its cross-section.
  • the radiation beam B is incident on the patterning structure (e.g., mask) MA, which is held on the support structure (e.g., mask table) MT, and is patterned by the patterning structure. Having traversed the patterning structure MA, the radiation beam B passes through the projection system PS, which focuses the beam onto a target portion C of the substrate W.
  • the substrate table WT can be moved accurately, e.g. so as to position different target portions C in the path of the radiation beam B.
  • the first positioner/stage PM and another position sensor IFl can be used to accurately position the patterning structure MA with respect to the path of the radiation beam B, e.g. after mechanical retrieval from a mask library, or during a scan.
  • movement of the support structure MT may be realized with the aid of a long-stroke module (coarse positioning) and a short-stroke module (fine positioning), which form part of the first positioner/stage PM.
  • movement of the substrate table WT may be realized using a long-stroke module and a short-stroke module, which form part of the second positioner/stage PW.
  • the support structure MT may be connected to a short-stroke actuator only, or may be fixed.
  • Patterning structure MA and substrate W may be aligned using patterning structure alignment marks Ml, M2 and substrate alignment marks Pl, P2.
  • the substrate alignment marks as illustrated occupy dedicated target portions, they may be located in spaces between target portions (these are known as scribe-lane alignment marks).
  • the patterning structure alignment marks may be located between the dies.
  • article supports such as substrate/wafer tables, mask supports and positioner/stages (mentioned above) in a lithographic system can be a very critical process.
  • the embodiments will be referred to as substrate/wafer tables, mask supports or and positioner/stages, although it should be understood that these embodiments may also be referred to or considered as the more general indication of "article support”.
  • the article supports may form any support configured to hold an article in a beam of radiation, be it a substrate, a mask or a fiducial reticle.
  • Another conventional material option involves the use of much harder materials, for example silicon-infiltrated silicon carbide (Si:SiC), exhibiting high initial elastic modulus.
  • Si:SiC silicon-infiltrated silicon carbide
  • the shortcoming associated with these high modulus materials is the high coefficients of thermal expansion they exhibit is problematic; complicated on line monitoring and alignment of the wafer is required to actively compensate dimensional changes.
  • One additional conventional material option involves foamed materials, particularly SiC.
  • foams are usually difficult to produce in large sizes, are expensive to produce and they possess undesirably large coefficients of thermal expansion. Although they may meet the criterion of mechanical stiffness and high elastic modulus-to-density ratio, respectively, their thermal properties, particularly conductivity and expansion, are unacceptable.
  • foamed materials are particularly susceptible to particle contamination when utilized as semiconductor support materials.
  • the article support in its most general form, comprises a glass-ceramic material which possesses the following desirable attributes: (1) fracture toughness greater than 1.5 MPa/m l/2 (2) a coefficient of thermal expansion of less than 1.OxIC 6 K '1 ; (3) a thermal conductivity greater than about 3.5 W/(m-K); (4) an elastic modulus of greater than 120 GPa; and (5) a high elastic modulus-to- density ratio in excess of 40 GPa-g/cm 3 ; and, (6) a thermal stability coefficient of ⁇ 0.25.
  • any glass-ceramic which exhibits the aforementioned desirable properties will be suitable for use as the article support material.
  • a glass-ceramic material exhibiting cordierite (2 MgO.2Al 2 ⁇ 3.5SiO 2 ) as the predominate crystalline phase is the glass- ceramic material utilized.
  • the glass-ceramic support material is essentially non-porous which leads to increased wear resistance and fracture toughness, however the support should not be so dense that the glass-ceramic material, does not exhibit the requisite/aforementioned modulus to density ratio requirement.
  • the skilled artisan will recognize that if the glass-ceramic material is non-porous/dense that characteristic must be balanced by a high enough elastic modulus so as to achieve the requisite modulus to density ratio requirement in excess of 40 GPa g/cm 3 .
  • TSC thermal stability coefficient
  • TSC CTE / log (10) [TC • Im-K / W]
  • This TSC relationship takes into account that a that a low CTE is most desirable for the glass- ceramic support material for a material, while a high thermal conductivity, though important is less critical, thus the thermal conductivity portion of the ratio includes the LOGlO modifier.
  • SiC and Si 3 N 4 exhibit undesirably high thermal stability coefficients of 0.1 and 2.1 respectively.
  • the article support structure 10 which comprises a layered or laminate structure which includes a top glass- ceramic material layer 12, a middle layer 16 comprising a honeycomb ceramic material, and a bottom layer 16 comprised of a glass-ceramic, ceramic or crystalline material.
  • the top layer is comprised of the aforementioned glass-ceramic material that exhibits the aforementioned desirable properties.
  • the glass- ceramic material top layer comprises a glass-ceramic material exhibiting cordierite (2MgO.2Al 2 O 3 .5SiO 2 ) as the predominate crystalline phase.
  • this cordierite glass-ceramic material exhibits a fracture toughness greater than 1.5 MPa/m 1/2 , a coefficient of thermal expansion of less than 1.OxIC 6 K "1 , a thermal conductivity greater than about 3.5 W/(m.K), an elastic modulus of greater than 120 GPa, a high elastic-to-density ratio in excess of 40 GPa g/cm 3 and a thermal stability coefficient of less than or equal to 0.25.
  • the thickness of this top cordierite glass ceramic layer There is no limitation on the thickness of this top cordierite glass ceramic layer, however if the layer is too thick, the weight of the overall layered structure is unacceptable; that said, it is recommended that this top glass-ceramic layer exhibit a thickness of 5 mm or less.
  • the bottom layer exhibits the same or similar properties as that exhibited by the top layer and thus is comprised of the same cordierite glass-ceramic material. It is contemplated however that materials other than cordierite glass ceramics can be utilized for this bottom layer including, for example, the following thermally conductive, stiff and abrasion resistant glass-ceramic, ceramic or crystalline materials such as sintered cordierite, silicon carbide, silicon nitride, aluminum nitride, aluminum titanate, boron nitride.
  • the inner or middle ceramic honeycomb layer functions to give the article support the requisite stiffness
  • the top glass-ceramic comprised of the cordierite glass ceramics functions to enable heat transfer from the article (either the wafer or the mask) which ensures thermal stability of the wafer/mask and enables precise positioning and handling during the semiconductor manufacturing operation.
  • the top cordierite glass ceramic layer has the following functions: 1) it provides a seal for the open channels in the honeycomb substrate layer; 2) it provide a homogeneous surface of very high quality, which enables the precision machining and micro- to nanostructuring of that surface, which in turn leads to , and 3) improved mechanical resistance of the table.
  • this honeycomb substrate can be comprised of either extruded aluminum titanate and/or cordierite ceramic materials; see US Pat. No. 5258150 for a suitable cordierite material and US Pat. No. 7001861 for a suitable aluminum titanate material.
  • Commercially available materials suitable for this use include the following materials manufactured by the assignee of the current invention: Celcor ® , Duratrap ® AT, Duratrap ® CO or Duratrap ® RC.
  • the top plate is comprised a glass-ceramic material exhibiting cordierite as the predominate crystalline phase glass ceramic and the honeycomb substrate middle layer is comprised of cordierite ceramics; the use of two cordierite materials ensures that less problems with incompatibility of the materials.
  • This honeycomb substrate layer can be comprised of a single extruded honeycomb substrate as illustrated in Fig. 3.
  • Fig. 4 illustrated is an alternative embodiment of the honeycomb substrate layer 14 comprising of a plurality of extruded honeycomb segments 20 affixed together as illustrated in
  • a the single piece honeycomb substrate layer is preferred, however for larger sizes, an assembly of a plurality of segments may be necessary.
  • segments of different shapes can be utilized; triangular segments (see Fig. 4), hexagonal segments (not shown), quadratic segments (not shown) or a combination of those segment shapes (not shown) are possible.
  • the layered article support 10 embodiment further includes a bonding layer 18 which functions to bond together the upper cordierite glass ceramic 12 and the bottom glass-ceramic layer 16 to the inner honeycomb substrate layer 14.
  • this bonding layer comprises a layer of an inorganic glass frit which exhibits a sintering temperature not higher than 900 0 C; additionally it is preferable that the thickness of this inorganic frit glass layer is not greater than 150 ⁇ m. Bonding between the respective layers is accomplished by stacking the layers adjacent each other heat treating the layered structure at a temperature equal to or above the sintering temperature of the bonding frit.
  • Two acceptable low-expansion frit which can be utilized in this embodiment includes the following; (1) a crystallizing frit that comprises ⁇ -eucryptite as the major crystalline species, and, (2) a frit charged with ⁇ -eucryptite particles; i.e., a glass frit (glass powder or crushed glass) which has been mixed with ceramic particles resulting in a reduced CTE frit.
  • the bonding layer comprises a metal-alcoxide coating, e.g. a silane coating that is capable of both mechanically and chemically bonding to both the honeycomb structure and the upper and lower glass-ceramic layers.
  • Bonding is again achieved by stacking the layers with the bonding material interposed between the respective layers and subjecting the layered structure to a thermal treatment, preferably to a temperature where organic compounds are burnt out and the metal-alcoxide coating (or bond) transforms into an inorganic layer.
  • the bonding layer is comprised of a metallic material.
  • a metallic material includes the use one or more layers comprised of an aluminum-containing alloy.
  • bonding is achieved by stacking the layers with the metallic bonding material interposed between the respective layers and subjecting the layered structure to a thermal treatment at a temperature not higher
  • One final bonding layer embodiment involves the use of an organic or hybrid bonding layer including, but not limited to epoxy or adhesive; particularly one that is vacuum and UV-stable can be used.
  • the heat treating of the bonding layers can be performed by complete heating, for example, in a furnace.
  • complete heating e.g. heating with a laser beam
  • honeycomb layer structure channels on either side can be closed/plugged with a cement paste; particular materials which can be used are well known to the skilled in the art. This closing or plugging of channels on either side are likely to the contact area with the top plate (or bottom plate) and thus improve bonding.
  • heat transfer in the honeycomb structure can be optimized/enhanced through the use of the cement paste.
  • the ceramic honeycomb substrate regardless of whether cordierite or aluminum titanate is utilized, be preconditioned prior to assembly with/bonding to the bottom and top glass- ceramic layers to form the layered article support embodiment.
  • One means for preconditioning involves the full wetting of the honeycomb substrate with a suitable silane solution and subsequent heat treatment; the result is the production of a layer rich in silicon oxide that will cover both inner and outer surface of the honeycomb.
  • Benefits of this preconditioning and formation of the silicon oxide layer include: (a) an increase in the mechanical stability of the honeycomb due to a covering of the surface defects with the SiO 2 - rich layer; and, (b) increased performance of the bond, depending on the particular type of silane solution utilized; (c) a reduction, and in some cases the prevention, of the formation of prevent that individual ceramic particles (from the honeycomb) thereby avoiding the contamination the wafer or mask and, the processing chambers; and (4) increase in the performance or operation of the article support/handling tool in vacuum conditions due to the covering of surface defects, porosity or other cavities with the silicon oxide layer, and the resultant minimization of micro-condensation.
  • One final embodiment of the cordierite glass-ceramic article support structure contemplated by the inventors involves a top glass-ceramic material layer and bonded thereto a bottom layer 16 comprised of a glass-ceramic, ceramic or crystalline material.
  • the top layer is comprised of the aforementioned glass-ceramic material that exhibits the aforementioned desirable properties.
  • the glass-ceramic material top layer comprises a glass-ceramic material exhibiting cordierite (2MgO.2 Al 2 O 3 .5SiO 2 ) as the predominate crystalline phase.
  • this cordierite glass-ceramic material exhibits a fracture toughness greater than 1.5 MPa/m 1/2 , a coefficient of thermal expansion of less than 1.0x10 " 6 K “1 , a thermal conductivity greater than about 3.5 W/(m.K), an elastic modulus of greater than 120 GPa, a high elastic-to-density ratio in excess of 40 GPa-g/cm 3 and a thermal stability coefficient of less than or equal to 0.25.
  • the thickness of this top cordierite glass ceramic layer There is no limitation on the thickness of this top cordierite glass ceramic layer, however, as before if the layer is too thick, the weight of the overall layered structure is unacceptable; that said, it is recommended that this top glass- ceramic layer exhibit a thickness of 5 mm or less.
  • both embodiments of the present invention, the simple cordierite glass-ceramic article support embodiment and the layered article support embodiment provide a number of advantages over the conventional support materials, including the following: (1) when compared to conventionally used glass ceramics, such as Zerodur (Schott) or ClearCeram (Ohara), the present article support embodiments are capable of achieving higher thermal conductivity, which in turn enable mores stable temperatures during wafer processing (particularly during immersion lithography) which in turn enables higher resolution during the patterning process.
  • conventionally used glass ceramics such as Zerodur (Schott) or ClearCeram (Ohara)
  • the present article support embodiments are capable of achieving higher thermal conductivity, which in turn enable mores stable temperatures during wafer processing (particularly during immersion lithography) which in turn enables higher resolution during the patterning process.
  • the benefits of the either the simple cordierite glass-ceramic article support embodiment and the layered article support embodiment achieves the following (1) a handling tool/article support that enables ultra-high precision positioning of wafers, optical masks, or other components in semiconductor patterning machines; (2) geometrical stability under mechanical and thermal load with minimal requirements for active control; (3) minimization of the contamination of the process chamber coupled with minimization of the resultant abrasion of the particles of top glass-ceramic surface layer, both of which lead to maximization of the lifetime of the article support or tools.
  • an additional advantage when compared to conventional article supports designs/materials is that this layered structure which incorporates an inner honeycomb material enables the manufacture of much lighter components, which in turn results in higher processing speeds, less vibration and, effectively, higher lithographic resolution.
  • one final advantage of this layered configuration is that it enables flexibility of design and optimization and/or varying of material/ support characteristics; i.e., it enables product designers/engineers more design flexibility in that the key properties/functionality reside in the different portions of the layered configuration .
  • a highly wear resistible top plate with only moderate thermal conductivity this could be achieved through the use of a thin top plate, while the honeycomb middle layer would be designed so as to allows efficient heat transfer.
  • a thicker top plate which itself ensure would ensure quicker heat transfer could be utilized, while a thinner cordierite ceramic middle layer would still provide the necessary stiffness.
  • One final advantage contemplated for this layered support embodiment of this design is the ease of manufacturing when compared to manufacturing of article supports comprising bulk glass ceramics such as Zerodur ® .
  • these conventional bulk glass ceramic article supports require the inclusion of machined-in cooling channels.
  • this necessitates the use of article supports exhibiting a relatively large initial thickness; e.g. the use of (thick) glassy and glass ceramic bodies exceeding 15 mm in thickness.
  • Glass-ceramic 53 structures exhibiting a thickness this large are relatively difficult to manufacture for a number of reasons: (1) compositional homogeneity is difficult to achieve throughout the body; (2) relatively long cooling times are required (sometimes up to several months) so as to alleviate thermal stresses and to achieve thermal homogeneity; (3) excessive long crystallization times due to the same thermal homogeneity and thermal stresses issues; and, (4) in order to achieve these large thickness difficult processing techniques such as casting (vs. conventional rolling) are required. That being said, it follows that production of article supports incorporating comparably thin glass ceramic sheet (e.g. ⁇ 5 mm) in the layered configuration are preferable and/or desired.
  • comparably thin glass ceramic sheet e.g. ⁇ 5 mm
  • any use of the terms "wafer” or “die” herein may be considered as synonymous with the more general terms “substrate” or “target portion”, respectively.
  • the substrate referred to herein may be processed, before or after exposure, in for example a track (a tool that typically applies a layer of resist to a substrate and develops the exposed resist), a metrology tool and/or an inspection tool. Where applicable, the disclosure herein may be applied to such and other substrate processing tools. Further, the substrate may be processed more than once, for example in order to create a multi-layer IC, so that the term substrate used herein may also refer to a substrate that already contains multiple processed layers.
  • imprint lithography a topography in a patterning structure defines the pattern created on a substrate.
  • the topography of the patterning structure may be pressed into a layer of resist supplied to the substrate whereupon the resist is cured by applying electromagnetic radiation, heat, pressure or a combination thereof.
  • the patterning structure is moved out of the resist leaving a pattern in it after the resist is cured.
  • UV radiation e.g. having a wavelength of or about 365, 355, 248, 193, 157 or 126 nm
  • EUV radiation e.g. having a wavelength in the range of 5-20 nm
  • particle beams such as ion beams or electron beams.
  • lens may refer to any one or combination of various types of optical components, including refractive, reflective, magnetic, electromagnetic and electrostatic optical components.
  • the invention may take the form of a computer program containing one or more sequences of machine-readable instructions describing a method as disclosed above, or a data storage medium (e.g. semiconductor memory, magnetic or optical disk) having such a computer program stored therein.
  • a data storage medium e.g. semiconductor memory, magnetic or optical disk

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Abstract

L'invention porte sur un matériau de support ou de manipulation d'article configuré pour porter un article à placer dans un trajet de faisceau d'un faisceau de rayonnement d'un appareil de lithographie. Le matériau de support ou de manipulation d'article comporte un matériau en vitrocéramique qui présente une ténacité à la fracture de plus de 1,5 MPa/m1/2, une dilatation thermique de moins de 1,0 x 10-6 K-1, une conductivité thermique supérieure à environ 3,5W/(m.K), un module d'élasticité de plus de 120 GPa, un rapport élastique-à-densité élevé de plus de 40 GPa cm3/g, et un coefficient de stabilité thermique ≤ 0,25. Dans un mode de réalisation, ce matériau vitrocéramique est un matériau vitrocéramique de cordiérite.
PCT/US2008/010253 2007-08-31 2008-08-29 Dispositifs de support d'article fabriquant un semi-conducteur en vitrocéramique et composite vitrocéramique/céramique WO2009032197A1 (fr)

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Cited By (5)

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WO2011011175A2 (fr) 2009-07-24 2011-01-27 Illumina, Inc. Procédé de séquençage d'une matrice polynucléotidique
WO2014122151A3 (fr) * 2013-02-07 2014-11-20 Asml Holding N.V. Appareil lithographique et procédé
WO2018005422A1 (fr) * 2016-07-01 2018-01-04 Corning Incorporated Substrat de support pour traitement de semi-conducteurs
CN113454535A (zh) * 2019-02-13 2021-09-28 Asml控股股份有限公司 用于机械接口的中间层
CN115491676A (zh) * 2021-06-01 2022-12-20 上海陆亿新能源有限公司 绿色经济的高强耐高温蜂窝陶瓷薄膜绝热结构

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US5884138A (en) * 1996-06-10 1999-03-16 Corning Incorporated Method for improving the stiffness of extrudates
US20020044267A1 (en) * 2000-10-13 2002-04-18 Ackerman Bradford G. Silica-based light-weight EUV lithography stages
EP1278089A2 (fr) * 2001-07-14 2003-01-22 ASML Netherlands B.V. Dispositif de lithographie et méthode de fabrication
DE10242481C1 (de) * 2002-09-13 2003-12-04 Schott Glas Keramisches Kochsystem und Verfahren zur Herstellung derselben
US20040247826A1 (en) * 2000-06-20 2004-12-09 Conzone Samuel David Glass ceramic composites
WO2008017449A2 (fr) * 2006-08-10 2008-02-14 Carl Zeiss Smt Ag Structure composite pour microlithographie et disposition optique

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US4711860A (en) * 1986-03-12 1987-12-08 Corning Glass Works Modified cordierite glass ceramic composite
US5884138A (en) * 1996-06-10 1999-03-16 Corning Incorporated Method for improving the stiffness of extrudates
US20040247826A1 (en) * 2000-06-20 2004-12-09 Conzone Samuel David Glass ceramic composites
US20020044267A1 (en) * 2000-10-13 2002-04-18 Ackerman Bradford G. Silica-based light-weight EUV lithography stages
EP1278089A2 (fr) * 2001-07-14 2003-01-22 ASML Netherlands B.V. Dispositif de lithographie et méthode de fabrication
DE10242481C1 (de) * 2002-09-13 2003-12-04 Schott Glas Keramisches Kochsystem und Verfahren zur Herstellung derselben
WO2008017449A2 (fr) * 2006-08-10 2008-02-14 Carl Zeiss Smt Ag Structure composite pour microlithographie et disposition optique

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011011175A2 (fr) 2009-07-24 2011-01-27 Illumina, Inc. Procédé de séquençage d'une matrice polynucléotidique
WO2014122151A3 (fr) * 2013-02-07 2014-11-20 Asml Holding N.V. Appareil lithographique et procédé
JP2016509258A (ja) * 2013-02-07 2016-03-24 エーエスエムエル ホールディング エヌ．ブイ． リソグラフィ装置及び方法
US10001713B2 (en) 2013-02-07 2018-06-19 Asml Holding N.V. Lithographic apparatus and method
US10908518B2 (en) 2013-02-07 2021-02-02 Asml Holding N.V. Lithographic apparatus and method
WO2018005422A1 (fr) * 2016-07-01 2018-01-04 Corning Incorporated Substrat de support pour traitement de semi-conducteurs
US10580666B2 (en) 2016-07-01 2020-03-03 Corning Incorporated Carrier substrates for semiconductor processing
CN113454535A (zh) * 2019-02-13 2021-09-28 Asml控股股份有限公司 用于机械接口的中间层
US11927889B2 (en) 2019-02-13 2024-03-12 Asml Holding N.V. Intermediate layer for mechanical interface
CN115491676A (zh) * 2021-06-01 2022-12-20 上海陆亿新能源有限公司 绿色经济的高强耐高温蜂窝陶瓷薄膜绝热结构

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