WO2009031381A1 - Metal oxide semiconductor manufacturing method and thin film transistor obtained by the method - Google Patents

Metal oxide semiconductor manufacturing method and thin film transistor obtained by the method Download PDF

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Publication number
WO2009031381A1
WO2009031381A1 PCT/JP2008/064206 JP2008064206W WO2009031381A1 WO 2009031381 A1 WO2009031381 A1 WO 2009031381A1 JP 2008064206 W JP2008064206 W JP 2008064206W WO 2009031381 A1 WO2009031381 A1 WO 2009031381A1
Authority
WO
WIPO (PCT)
Prior art keywords
metal oxide
oxide semiconductor
thin film
semiconductor manufacturing
film transistor
Prior art date
Application number
PCT/JP2008/064206
Other languages
French (fr)
Japanese (ja)
Inventor
Makoto Honda
Katsura Hirai
Hiroshi Kita
Original Assignee
Konica Minolta Holdings, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Holdings, Inc. filed Critical Konica Minolta Holdings, Inc.
Priority to JP2009531166A priority Critical patent/JPWO2009031381A1/en
Publication of WO2009031381A1 publication Critical patent/WO2009031381A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate

Abstract

Provided is a novel metal oxide semiconductor manufacturing method by which fluctuation of off-current or the like is improved, mobility is improved, a TFT element is stabilized, and furthermore, production efficiency is improved and a metal oxide semiconductor is made flexible by performing formation by continuous application, printing and the like on a resin substrate. A thin film transistor manufactured by such manufacturing method is also provided. The metal oxide semiconductor manufacturing method is characterized in forming a thin film including a precursor of a metal oxide semiconductor, on the substrate, then, irradiating the thin film with electromagnetic wave under existence of oxygen to manufacture the metal oxide semiconductor.
PCT/JP2008/064206 2007-09-07 2008-08-07 Metal oxide semiconductor manufacturing method and thin film transistor obtained by the method WO2009031381A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009531166A JPWO2009031381A1 (en) 2007-09-07 2008-08-07 Method for producing metal oxide semiconductor, and thin film transistor obtained by the method

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-232428 2007-09-07
JP2007232428 2007-09-07

Publications (1)

Publication Number Publication Date
WO2009031381A1 true WO2009031381A1 (en) 2009-03-12

Family

ID=40428703

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064206 WO2009031381A1 (en) 2007-09-07 2008-08-07 Metal oxide semiconductor manufacturing method and thin film transistor obtained by the method

Country Status (2)

Country Link
JP (1) JPWO2009031381A1 (en)
WO (1) WO2009031381A1 (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2010106920A1 (en) * 2009-03-18 2010-09-23 コニカミノルタホールディングス株式会社 Method for manufacturing thin film transistor, and thin film transistor
JP2010258058A (en) * 2009-04-22 2010-11-11 Konica Minolta Holdings Inc Method for manufacturing metal oxide semiconductor, metal oxide semiconductor and thin-film transistor
JP2010263103A (en) * 2009-05-08 2010-11-18 Konica Minolta Holdings Inc Thin-film transistor, and method of manufacturing the same
JP2010272663A (en) * 2009-05-21 2010-12-02 Sony Corp Thin film transistor, display device, and electronic apparatus
JP2011512029A (en) * 2008-01-31 2011-04-14 ノースウエスタン ユニバーシティ Solution processing type high mobility inorganic thin film transistor
CN104347728A (en) * 2013-08-07 2015-02-11 加利福尼亚大学董事会 Transparent metal oxide nanoparticle compositions, methods of manufacture thereof and articles comprising the same
JP2016028291A (en) * 2010-04-28 2016-02-25 株式会社半導体エネルギー研究所 Method of making liquid crystal display device
US9515193B2 (en) 2013-03-19 2016-12-06 Fujifilm Corporation Metal oxide film, method for manufacturing same, thin film transistor, display apparatus, image sensor, and X-ray sensor
JP2017152693A (en) * 2016-02-24 2017-08-31 日本放送協会 Coating type oxide semiconductor, thin film transistor, display device, and manufacturing method of coating type oxide semiconductor
US9779938B2 (en) 2013-07-10 2017-10-03 Fujifilm Corporation Metal oxide thin film, method of producing same, and coating solution for forming metal oxide thin film used in said method
US9852906B2 (en) 2009-06-30 2017-12-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JPWO2019234561A1 (en) * 2018-06-08 2021-06-17 株式会社半導体エネルギー研究所 Semiconductor devices and methods for manufacturing semiconductor devices

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05251705A (en) * 1992-03-04 1993-09-28 Fuji Xerox Co Ltd Thin-film transistor
JP2000123658A (en) * 1998-10-09 2000-04-28 Fuji Photo Film Co Ltd Manufacture of transparent conductive film and transparent conductive film
JP2001244464A (en) * 2000-03-02 2001-09-07 Sanyo Electric Works Ltd Method of manufacturing metal oxide transistor
JP2007042690A (en) * 2005-07-29 2007-02-15 Fujifilm Holdings Corp Nano particle dispersion liquid, manufacturing method of semiconductor device using the same, and semiconductor device
JP2007042689A (en) * 2005-07-29 2007-02-15 Fujifilm Holdings Corp Metal alkoxide solution, manufacturing method of semiconductor device using the same, and semiconductor device

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05251705A (en) * 1992-03-04 1993-09-28 Fuji Xerox Co Ltd Thin-film transistor
JP2000123658A (en) * 1998-10-09 2000-04-28 Fuji Photo Film Co Ltd Manufacture of transparent conductive film and transparent conductive film
JP2001244464A (en) * 2000-03-02 2001-09-07 Sanyo Electric Works Ltd Method of manufacturing metal oxide transistor
JP2007042690A (en) * 2005-07-29 2007-02-15 Fujifilm Holdings Corp Nano particle dispersion liquid, manufacturing method of semiconductor device using the same, and semiconductor device
JP2007042689A (en) * 2005-07-29 2007-02-15 Fujifilm Holdings Corp Metal alkoxide solution, manufacturing method of semiconductor device using the same, and semiconductor device

Cited By (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011512029A (en) * 2008-01-31 2011-04-14 ノースウエスタン ユニバーシティ Solution processing type high mobility inorganic thin film transistor
WO2010106920A1 (en) * 2009-03-18 2010-09-23 コニカミノルタホールディングス株式会社 Method for manufacturing thin film transistor, and thin film transistor
JP2010258058A (en) * 2009-04-22 2010-11-11 Konica Minolta Holdings Inc Method for manufacturing metal oxide semiconductor, metal oxide semiconductor and thin-film transistor
JP2010263103A (en) * 2009-05-08 2010-11-18 Konica Minolta Holdings Inc Thin-film transistor, and method of manufacturing the same
JP2010272663A (en) * 2009-05-21 2010-12-02 Sony Corp Thin film transistor, display device, and electronic apparatus
US9852906B2 (en) 2009-06-30 2017-12-26 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
US10332743B2 (en) 2009-06-30 2019-06-25 Semiconductor Energy Laboratory Co., Ltd. Method for manufacturing semiconductor device
JP2016028291A (en) * 2010-04-28 2016-02-25 株式会社半導体エネルギー研究所 Method of making liquid crystal display device
JP2017116942A (en) * 2010-04-28 2017-06-29 株式会社半導体エネルギー研究所 Liquid crystal display device manufacture method
US9697788B2 (en) 2010-04-28 2017-07-04 Semiconductor Energy Laboratory Co., Ltd. Liquid crystal display device
US9515193B2 (en) 2013-03-19 2016-12-06 Fujifilm Corporation Metal oxide film, method for manufacturing same, thin film transistor, display apparatus, image sensor, and X-ray sensor
US9779938B2 (en) 2013-07-10 2017-10-03 Fujifilm Corporation Metal oxide thin film, method of producing same, and coating solution for forming metal oxide thin film used in said method
CN104347728A (en) * 2013-08-07 2015-02-11 加利福尼亚大学董事会 Transparent metal oxide nanoparticle compositions, methods of manufacture thereof and articles comprising the same
JP2017152693A (en) * 2016-02-24 2017-08-31 日本放送協会 Coating type oxide semiconductor, thin film transistor, display device, and manufacturing method of coating type oxide semiconductor
JPWO2019234561A1 (en) * 2018-06-08 2021-06-17 株式会社半導体エネルギー研究所 Semiconductor devices and methods for manufacturing semiconductor devices
JP7297743B2 (en) 2018-06-08 2023-06-26 株式会社半導体エネルギー研究所 METHOD FOR MAKING METAL OXIDE

Also Published As

Publication number Publication date
JPWO2009031381A1 (en) 2010-12-09

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