WO2013015573A3 - Field-effect transistor using graphene oxide and method for manufacturing same - Google Patents

Field-effect transistor using graphene oxide and method for manufacturing same Download PDF

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Publication number
WO2013015573A3
WO2013015573A3 PCT/KR2012/005809 KR2012005809W WO2013015573A3 WO 2013015573 A3 WO2013015573 A3 WO 2013015573A3 KR 2012005809 W KR2012005809 W KR 2012005809W WO 2013015573 A3 WO2013015573 A3 WO 2013015573A3
Authority
WO
WIPO (PCT)
Prior art keywords
effect transistor
graphene oxide
field
substrate
manufactured
Prior art date
Application number
PCT/KR2012/005809
Other languages
French (fr)
Korean (ko)
Other versions
WO2013015573A2 (en
Inventor
이상욱
강태원
파닌겐나디
Original Assignee
동국대학교 산학협력단
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 동국대학교 산학협력단 filed Critical 동국대학교 산학협력단
Publication of WO2013015573A2 publication Critical patent/WO2013015573A2/en
Publication of WO2013015573A3 publication Critical patent/WO2013015573A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
    • H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic System
    • H01L29/1606—Graphene
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/182—Graphene
    • C01B32/194—After-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42356—Disposition, e.g. buried gate electrode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
    • H01L29/7781—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface with inverted single heterostructure, i.e. with active layer formed on top of wide bandgap layer, e.g. IHEMT
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78684—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising semiconductor materials of Group IV not being silicon, or alloys including an element of the group IV, e.g. Ge, SiN alloys, SiC alloys

Abstract

The present invention relates to a field-effect transistor (FET) including a graphene oxide on which a reducing process has been performed, the field-effect transistor comprising: a substrate; a gate electrode formed on the substrate; a dielectric layer formed on the gate electrode; a source electrode and a drain electrode formed on the dielectric layer; and the reduced graphene oxide as a channel layer for connecting the source electrode to the drain electrode. The field-effect transistor of the present invention can be manufactured on a flexible substrate, whereas a conventional FET using silicon material can be manufactured only on a hard substrate. In particular, the reduced graphene oxide used as the channel layer disperses well in water and can thus be manufactured as a suspension, thereby enabling the manufacture of a thin film using a printing method.
PCT/KR2012/005809 2011-07-22 2012-07-20 Field-effect transistor using graphene oxide and method for manufacturing same WO2013015573A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR20110073292 2011-07-22
KR10-2011-0073292 2011-07-22

Publications (2)

Publication Number Publication Date
WO2013015573A2 WO2013015573A2 (en) 2013-01-31
WO2013015573A3 true WO2013015573A3 (en) 2013-03-21

Family

ID=47601628

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/KR2012/005809 WO2013015573A2 (en) 2011-07-22 2012-07-20 Field-effect transistor using graphene oxide and method for manufacturing same

Country Status (2)

Country Link
KR (1) KR101428015B1 (en)
WO (1) WO2013015573A2 (en)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20140118285A (en) * 2013-03-28 2014-10-08 인텔렉추얼디스커버리 주식회사 Strain sensing device using reduced graphene oxide and fabrication method thereof
CN103295912B (en) 2013-05-21 2015-12-02 中国电子科技集团公司第十三研究所 A kind of grapheme transistor manufacture method based on self-aligned technology
KR101424603B1 (en) 2013-09-10 2014-08-04 한국과학기술연구원 Method of manufacturing thin film transistor
CN103531664B (en) * 2013-10-28 2016-08-17 苏州大学 The method preparing graphene-based phototransistor in flexible substrate
WO2018072103A1 (en) 2016-10-18 2018-04-26 广东东邦科技有限公司 Tft structure based on flexible multilayer graphene quantum carbon substrate material and manufacturing method
KR101906005B1 (en) * 2016-11-29 2018-10-10 국민대학교산학협력단 Flammable carbon nanotube transistors on a nitrocellulose paper substrate for transient electrics
KR102639314B1 (en) * 2020-04-13 2024-02-21 고려대학교 세종산학협력단 Vertical field effect transistor and the Manufacturing Method thereof

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090059871A (en) * 2007-12-07 2009-06-11 삼성전자주식회사 Reduced graphene oxide doped by dopant, thin layer and transparent electrode
KR20100136576A (en) * 2009-06-19 2010-12-29 한국과학기술원 A method for manufacturing graphene film, graphene film manufuctured by the same, electrode material comprising the same
KR20110081683A (en) * 2010-01-08 2011-07-14 서울대학교산학협력단 Ambi-polar memory device based on reduced graphene oxide using metal nanoparticle and the method for preparation of ambi-polar memory device
US20110169013A1 (en) * 2010-01-12 2011-07-14 Cree, Inc. Growing polygonal carbon from photoresist

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5544796B2 (en) 2009-09-10 2014-07-09 ソニー株式会社 Three-terminal electronic device and two-terminal electronic device
KR20120033722A (en) * 2010-09-30 2012-04-09 한국전자통신연구원 Graphene oxide memory devices and fabrication methods thereof
KR101157105B1 (en) 2011-02-14 2012-06-22 동국대학교 산학협력단 Nonvolatile memory device using the resistive switching of graphene oxide and the fabrication method thereof

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20090059871A (en) * 2007-12-07 2009-06-11 삼성전자주식회사 Reduced graphene oxide doped by dopant, thin layer and transparent electrode
KR20100136576A (en) * 2009-06-19 2010-12-29 한국과학기술원 A method for manufacturing graphene film, graphene film manufuctured by the same, electrode material comprising the same
KR20110081683A (en) * 2010-01-08 2011-07-14 서울대학교산학협력단 Ambi-polar memory device based on reduced graphene oxide using metal nanoparticle and the method for preparation of ambi-polar memory device
US20110169013A1 (en) * 2010-01-12 2011-07-14 Cree, Inc. Growing polygonal carbon from photoresist

Also Published As

Publication number Publication date
WO2013015573A2 (en) 2013-01-31
KR101428015B1 (en) 2014-08-11
KR20130011966A (en) 2013-01-30

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