WO2009028756A1 - Supporting plate for slicing silicon ingot - Google Patents

Supporting plate for slicing silicon ingot Download PDF

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Publication number
WO2009028756A1
WO2009028756A1 PCT/KR2007/004998 KR2007004998W WO2009028756A1 WO 2009028756 A1 WO2009028756 A1 WO 2009028756A1 KR 2007004998 W KR2007004998 W KR 2007004998W WO 2009028756 A1 WO2009028756 A1 WO 2009028756A1
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WO
WIPO (PCT)
Prior art keywords
supporting plate
curved surface
silicon ingot
pattern
slicing
Prior art date
Application number
PCT/KR2007/004998
Other languages
French (fr)
Inventor
Kyung-Joong Kim
Original Assignee
Dow Beam Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Dow Beam Co., Ltd. filed Critical Dow Beam Co., Ltd.
Priority to JP2009530289A priority Critical patent/JP2009545473A/en
Publication of WO2009028756A1 publication Critical patent/WO2009028756A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/673—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere using specially adapted carriers or holders; Fixing the workpieces on such carriers or holders
    • H01L21/67313—Horizontal boat type carrier whereby the substrates are vertically supported, e.g. comprising rod-shaped elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26

Definitions

  • the present invention relates to a supporting plate used for slicing a silicon ingot, in a silicon wafer making-step of semiconductor fabrication.
  • Silicon is a gray, easily-breakable, non-metal tetravalent atom, and is the second most abundant element on earth after oxygen, making up 27.8% of the Earth's crust.
  • silicon is formed into a plate-shaped wafer, and this begins with forming a silicon ingot.
  • silicon is formed into a plate-shaped wafer, and this begins with forming a silicon ingot.
  • the ingot undergoes surface grinding to a diameter slightly larger than what is expected for the final product. Then after a series of inspection steps, silicon ingot undergoes slicing to be formed into a wafer shape.
  • wires are popularly used to slice the silicon. Compared to a diamond coated blade slicing, wire slicing provides increased yield ratio, and reduced irregularity in thickness and bow/wrap phenomenon.
  • HG. 1 is a front view of the supporting plate of KR 20- 1997-0027070, which includes a curved surface 100 to contact a silicon ingot S.
  • the process of slicing the silicon ingot S according to KR 20- 1997-0027070 will be explained briefly below.
  • [9]
  • Bond adhesive is applied to a bottom surface 200 and the bottom surface 200 is attached to a vise (not shown).
  • adhesive is applied to the curved surface 100, and the silicon ingot S is attached to the curved surface 100.
  • the silicon ingot S is then sliced with a wire saw.
  • the length of contact between the curved surface 100 and the silicon ingot S (with reference to circumference) is also long, causing irregular contact between the curved surface 100 and the silicon ingot S (It is practically not easy to fabricate supporting plate and silicon ingot S to be in perfect matching, due to deformation formed during fabrication process). Therefore, irregular gaps are generated between the curved surface 100 and the silicon ingot S, and adhesives are applied to fill in such gaps.
  • binding force of the adhesive varies along the contact area, and these differences in binding force of adhesive cause the silicon ingot S to drop from the supporting plate in the middle of slicing process.
  • the adhesive is applied to the bottom surface 200 of the supporting plate to attach the supporting plate to the vise, which means that the supporting plate is attached to the vise simply with an adhesive. Accordingly, the supporting plate may not be securely fixed, and excessive amount of adhesive is used to secure the supporting plate in place, causing increased fabricating cost of the silicon wafer.
  • the present invention provides a supporting plate for slicing a silicon ingot, which is capable of reducing resistance applied to a slicing tool such as wire saw and thus reducing errors during slicing, and also reducing an amount of the supporting plate material being consumed during slicing, and more firmly fixing to a vise with less amount of adhesive.
  • a supporting plate for slicing a silicon ingot which includes a curved surface to contact the silicon ingot, and securing portions extending from both sides of the curved surface, wherein the securing portions are at a different height from terminating ends of the curved surface.
  • the curved surface may have a radius of curvature which corresponds to that of the silicon ingot. [17] A lowermost portion of the curved surface may be at a higher height than an uppermost portion of the securing portions. [18]
  • the curved surface may include at least one of a wave pattern, a light straight pattern, and a mirror pattern. [19] The wave pattern, the light straight pattern, and the mirror pattern may have the pitches of 80/M-120/M, 40/M-60/M, and IO/M-30/M, respectively.
  • the supporting plate may include 38 - 42 weight% of epoxy, 43 ⁇ 47 weight% of reinforce filler, 12 ⁇ 16 weight% of polyurethane, and 0.5 ⁇ 1.5 weight% of hardener.
  • the terminating ends of the curved surface may have a width (F) in the range of
  • the supporting plate according to the embodiments of the present invention has reduced contact area between the curved surface and the silicon ingot, thereby having reduced resistance to the wire saw and reduced errors during a process of slicing the silicon ingot with the wire saw.
  • the curved surface of the supporting plate in a manner such that the terminating ends thereof have the width of 0mm (or alternatively, 0.5mm or less), the amount of the adhesive or abrasive on the terminating ends can be eliminated or at least reduced. As a result, good quality wafers are obtained by slicing these off with the wire saw.
  • HG. 1 is a view illustrating a conventional supporting plate
  • HG. 2 is a perspective view of a supporting plate according to an embodiment of the present invention.
  • HG. 3 is a front view of the supporting plate of HG. 2;
  • HGS. 4A to 4C are views illustrating several exemplary patterns formed on a curved surface of the supporting plate of HG. 2. Best Mode for Carrying Out the Invention
  • HG. 2 is a perspective view of a supporting plate according to an embodiment of the present invention
  • HG. 3 is a front view of the supporting plate of HG. 2.
  • the supporting plate may include a curved surface 1 to contact a silicon ingot S, and securing portions 2 extending from both sides of the curved surface 1.
  • the securing portions 2 are provided at a different height from terminating ends 12 of the curved surface 1.
  • the terminating ends 12 of the curved surface 1 have prefarably a width (F) of 0 mm.
  • the terminating ends 12 may desirably have a width (F) within the range of 0 ⁇ F ⁇ 0.5mm to take into account the size tolerance, and the width (F) in the above range has proven that a good quality wafer is obtained.
  • a substance such as abrasive is applied as a lubricant to deal with the heat generated during slicing of the silicon ingot S with the wire saw.
  • the abrasive has to be discharged smoothly after use, but if F > 0mm, and more particularly, if F > lmm at the terminating ends 12 of the curved surface 1, this substance stays on the terminating ends 12.
  • the abrasive staying on the terminating ends 12 of the curved surface 1 causes resistance to the wire saw during slicing, thereby degrading the quality of the silicon wafer.
  • the lowermost portion 11 of the curved surface 1 is at a higher height than an uppermost portion 21 of the securing portion 2. Accordingly, the wire saw (not illustrated) is not brought into contact with the securing portion 2 and thus has reduced resistance while the wire saw moves to the lowermost portion 11 of the curved surface 1 and finishes slicing.
  • the curved surface 1 may desirably have a radius of curvature (R) which corresponds to that of the silicon ingot S.
  • the curved surface 1 may have wave pattern, light straight pattern, or mirror pattern (see FIGS. 4A, 4B, 4C) formed thereon.
  • FlG. 4A illustrates the curved surface having wave pattern, in which grooves are provided in wave form.
  • the presence of such grooves on the surface causes larger area for the application of adhesive, and subsequently the tighter binding between the silicon ingot S and the supporting plate.
  • the distance between the grooves, that is, the pitch may desirably range from about 80/M to about 120/M.
  • FlG. 4B illustrates a light straight pattern of the curved surface 1, in which straight lines of grooves are formed.
  • the arrangement of the grooves as straight lines causes straight contact area between the silicon ingot S and the supporting plate, thereby enabling good bonding therebetween. Furthermore, since the grooves are vertical to the cutting direction of the wire saw, loss of silicon wafer is reduced.
  • the pitch of the grooves may desirably be from about 40/M to about 60/M to form light grooves.
  • FlG. 4C illustrates a mirror pattern of the curved surface 1, in which the grooves are formed at a pitch ranging from about 10/M to about 30/M, forming a surface as smooth as a mirror.
  • the epoxy bond provides superior binding force than the liquid type bond, and thus is used more widely.
  • the problem is that the epoxy bond is the mixture of release agent and active agent in certain proportions, and this can cause irregularities along the surface where the epoxy is applied, depending on how the worker applies the epoxy bond on the curved surface.
  • the liquid type bond is easier to apply on the curved surface 1 of the supporting plate. Therefore, in consideration of the above, the use of the liquid type bond is currently growing in spite of lower binding force.
  • the securing portions 2 may be fixed to the vise with adequate securing tools such as clamps. In this case, the use of adhesive can be reduced significantly.
  • the constitution of the supporting plate may include:
  • the wafers are separated from one another once the ingot is sliced off, and the ingot should not drop from the supporting plate before the wafer is separated from the ingot.
  • the sliced wafers are separated from one another in the warm water whose temperature ranges from about 7O 0 C to about 8O 0 C, and it is important that the sliced wafer stays on the supporting plate while a mechanical tool such as robot arm separates the wafers from the ingot one by one.
  • the wafers often fall from the supporting plate.
  • the supporting plate according to the embodiments of the present invention, the wafer is securely supported in place until the temperature approximately of 80 0 C.
  • the supporting plate may be made from the mixture of the above- mentioned materials, and fabricated through a series of forming, cutting, and milling.
  • the supporting plate according to the embodiments of the present invention can be used efficiently for slicing a silicon ingot in the silicon wafer fabrication step of the semiconductor fabrication.

Abstract

A supporting plate used for slicing a silicon ingot, in a silicon wafer making-steps of semiconductor fabrication, is provided. The supporting plate for slicing a silicon ingot includes a curved surface to contact the silicon ingot, and securing portions extending from both sides of the curved surface, wherein the securing portions are at a different height from terminating ends of the curved surface. A lowermost portion of the curved surface is at a higher height than an uppermost portion of the securing portions. The curved surface comprises at least one of a wave pattern, a light straight pattern, and a mirror pattern. The wave pattern, the light straight pattern, and the mirror pattern have the pitches of 80/M-120/M, 40/M-60/M, and 10/M-30/M, respectively. The supporting plate includes 38 - 42 weight% of epoxy, 43 ~ 47 weight% of reinforce filler, 12 ~ 16 weight% of polyurethane, and 4) 0.5 ~ 1.5 weight% of hardener. The terminating ends of the curved surface have a width (F) in the range of 0<F≤0.5mm.

Description

Description
SUPPORTING PLATE FOR SLICING SILICON INGOT
Technical Field
[1] The present invention relates to a supporting plate used for slicing a silicon ingot, in a silicon wafer making-step of semiconductor fabrication.
Background Art [2] Silicon is a gray, easily-breakable, non-metal tetravalent atom, and is the second most abundant element on earth after oxygen, making up 27.8% of the Earth's crust.
Today, most semiconductor chips are created with silicon. [3] In order to make a semiconductor chip, silicon is formed into a plate-shaped wafer, and this begins with forming a silicon ingot. [4] After silicon growth procedure, the ingot undergoes surface grinding to a diameter slightly larger than what is expected for the final product. Then after a series of inspection steps, silicon ingot undergoes slicing to be formed into a wafer shape. [5] Since the silicon has a relatively high degree of surface hardness, wires are popularly used to slice the silicon. Compared to a diamond coated blade slicing, wire slicing provides increased yield ratio, and reduced irregularity in thickness and bow/wrap phenomenon. [6] Meanwhile, since the silicon wafer, which is the basic unit of the semiconductor fabrication, is very thin and requires accuracy, slicing single crystalline silicon requires a high level of precision with small tolerance. Accordingly, the supporting plate to support a silicon ingot is a critical part to prevent errors generated due to vibration during slicing. [7] Korean Utility Model Registration No. 20- 1997-0027070, filed on September 30,
1997, and issued to the present applicant, discloses a supporting plate which addresses the above problems. [8] HG. 1 is a front view of the supporting plate of KR 20- 1997-0027070, which includes a curved surface 100 to contact a silicon ingot S. The process of slicing the silicon ingot S according to KR 20- 1997-0027070 will be explained briefly below. [9] Erst, adhesive is applied to a bottom surface 200 and the bottom surface 200 is attached to a vise (not shown). Next, adhesive is applied to the curved surface 100, and the silicon ingot S is attached to the curved surface 100. The silicon ingot S is then sliced with a wire saw. [10] However, in KR 20- 1997-0027070, contact area between the curved surface 100 and the silicon ingot S is relatively large, so that the wire saw suffers resistance from the supporting plate while slicing the silicon ingot. As a result, errors are caused. In other words, the wire saw gets resistance from the supporting plate (hatched area of HG. 1) until it reaches a lowermost portion 101 of the curved surface 100.
[11] The length of contact between the curved surface 100 and the silicon ingot S (with reference to circumference) is also long, causing irregular contact between the curved surface 100 and the silicon ingot S (It is practically not easy to fabricate supporting plate and silicon ingot S to be in perfect matching, due to deformation formed during fabrication process). Therefore, irregular gaps are generated between the curved surface 100 and the silicon ingot S, and adhesives are applied to fill in such gaps. However, binding force of the adhesive varies along the contact area, and these differences in binding force of adhesive cause the silicon ingot S to drop from the supporting plate in the middle of slicing process.
[12] Furthermore, the adhesive is applied to the bottom surface 200 of the supporting plate to attach the supporting plate to the vise, which means that the supporting plate is attached to the vise simply with an adhesive. Accordingly, the supporting plate may not be securely fixed, and excessive amount of adhesive is used to secure the supporting plate in place, causing increased fabricating cost of the silicon wafer.
[13] Additionally, an amount of the supporting plate material is consumed more than necessary as a result of the slicing (see hatched area in FIG. 1). Therefore, there is a need for reducing an amount of the supporting plate material during slicing process. Disclosure of Invention Technical Problem
[14] The present invention provides a supporting plate for slicing a silicon ingot, which is capable of reducing resistance applied to a slicing tool such as wire saw and thus reducing errors during slicing, and also reducing an amount of the supporting plate material being consumed during slicing, and more firmly fixing to a vise with less amount of adhesive. Technical Solution
[15] According to an aspect of the present invention, there is provided a supporting plate for slicing a silicon ingot, which includes a curved surface to contact the silicon ingot, and securing portions extending from both sides of the curved surface, wherein the securing portions are at a different height from terminating ends of the curved surface.
[16] The curved surface may have a radius of curvature which corresponds to that of the silicon ingot. [17] A lowermost portion of the curved surface may be at a higher height than an uppermost portion of the securing portions. [18] The curved surface may include at least one of a wave pattern, a light straight pattern, and a mirror pattern. [19] The wave pattern, the light straight pattern, and the mirror pattern may have the pitches of 80/M-120/M, 40/M-60/M, and IO/M-30/M, respectively. [20] The supporting plate may include 38 - 42 weight% of epoxy, 43 ~ 47 weight% of reinforce filler, 12 ~ 16 weight% of polyurethane, and 0.5 ~ 1.5 weight% of hardener. [21] The terminating ends of the curved surface may have a width (F) in the range of
0<F≤0.5mm.
Advantageous Effects
[22] Accordingly, the supporting plate according to the embodiments of the present invention has reduced contact area between the curved surface and the silicon ingot, thereby having reduced resistance to the wire saw and reduced errors during a process of slicing the silicon ingot with the wire saw.
[23] Furthermore, since the supporting plate requires less amount of material to form, excessive loss of material of the supporting plate is prevented during slicing.
[24] Furthermore, since the securing portions extending from both sides of the curved surfaces are fixed to the vise with the clamps or the like, the supporting plate is fixed to the vise more firmly with less amount of adhesive, and as a result, product defects can be reduced.
[25] Furthermore, by shortening the length of contact between the curved surface of the supporting plate and the circumference of the silicon ingot and thereby reducing the possibility of having a gap between the curved surface of the supporting plate and the silicon ingot, adhesive can be applied between the curved surface and the silicon ingot more uniformly. As a result, the supporting force of the adhesive remains uniform during slicing, thereby preventing unexpected dropping of the silicon ingot in the middle of slicing.
[26] Furthermore, by forming the curved surface of the supporting plate in a manner such that the terminating ends thereof have the width of 0mm (or alternatively, 0.5mm or less), the amount of the adhesive or abrasive on the terminating ends can be eliminated or at least reduced. As a result, good quality wafers are obtained by slicing these off with the wire saw. Brief Description of the Drawings
[27] HG. 1 is a view illustrating a conventional supporting plate;
[28] HG. 2 is a perspective view of a supporting plate according to an embodiment of the present invention;
[29] HG. 3 is a front view of the supporting plate of HG. 2; and
[30] HGS. 4A to 4C are views illustrating several exemplary patterns formed on a curved surface of the supporting plate of HG. 2. Best Mode for Carrying Out the Invention
[31] Certain exemplary embodiments of the present invention will now be described in greater detail with reference to the accompanying drawings.
[32] HG. 2 is a perspective view of a supporting plate according to an embodiment of the present invention, and HG. 3 is a front view of the supporting plate of HG. 2.
[33] Referring to HGS. 2 and 3, the supporting plate according to an embodiment of the present invention may include a curved surface 1 to contact a silicon ingot S, and securing portions 2 extending from both sides of the curved surface 1.
[34] The securing portions 2 are provided at a different height from terminating ends 12 of the curved surface 1.
[35] The terminating ends 12 of the curved surface 1 have prefarably a width (F) of 0 mm.
However, since it is hard to make the terminating ends 12 to have exact 0 mm of width with the material of the supporting plate (explained in more detail below) and current processing technique, the terminating ends 12 may desirably have a width (F) within the range of 0<F≤0.5mm to take into account the size tolerance, and the width (F) in the above range has proven that a good quality wafer is obtained.
[36] The reasons for setting the width (F) in the above manner will be explained below.
[37] Erst, in order to slice the silicon ingot S, adhesive is applied to the curved surface 1 on the supporting plate, and then the ingot S is brought into contact with the curved surface 1. Due to the weight of the ingot S, which generally ranges from 200kg to 300kg, the adhesive on the curved surface 1 is often displaced toward the ends of the supporting plate and gravitated. If the terminating ends 12 of the curved surface 1 have the width larger than zero, for example, if F > lmm, the adhesive does not go over the terminating ends 12, but stays and hardens on the terminating ends 12. In such a situation, the wire saw gets the resistance of the hardened adhesive on the terminating ends 12, and as a result, the wafer has a degraded precision, such as several layers formed on the surface thereof. [38] Secondly, a substance such as abrasive is applied as a lubricant to deal with the heat generated during slicing of the silicon ingot S with the wire saw. The abrasive has to be discharged smoothly after use, but if F > 0mm, and more particularly, if F > lmm at the terminating ends 12 of the curved surface 1, this substance stays on the terminating ends 12. As in the case where the adhesive stays, the abrasive staying on the terminating ends 12 of the curved surface 1 causes resistance to the wire saw during slicing, thereby degrading the quality of the silicon wafer.
[39] However, as mentioned above, if F≤0.5mm, the influence is almost negligible, so that good quality wafer is obtained.
[40] The lowermost portion 11 of the curved surface 1 is at a higher height than an uppermost portion 21 of the securing portion 2. Accordingly, the wire saw (not illustrated) is not brought into contact with the securing portion 2 and thus has reduced resistance while the wire saw moves to the lowermost portion 11 of the curved surface 1 and finishes slicing.
[41] The curved surface 1 may desirably have a radius of curvature (R) which corresponds to that of the silicon ingot S. The curved surface 1 may have wave pattern, light straight pattern, or mirror pattern (see FIGS. 4A, 4B, 4C) formed thereon.
[42] FlG. 4A illustrates the curved surface having wave pattern, in which grooves are provided in wave form. The presence of such grooves on the surface causes larger area for the application of adhesive, and subsequently the tighter binding between the silicon ingot S and the supporting plate. The distance between the grooves, that is, the pitch may desirably range from about 80/M to about 120/M.
[43] FlG. 4B illustrates a light straight pattern of the curved surface 1, in which straight lines of grooves are formed. The arrangement of the grooves as straight lines causes straight contact area between the silicon ingot S and the supporting plate, thereby enabling good bonding therebetween. Furthermore, since the grooves are vertical to the cutting direction of the wire saw, loss of silicon wafer is reduced. The pitch of the grooves may desirably be from about 40/M to about 60/M to form light grooves.
[44] FlG. 4C illustrates a mirror pattern of the curved surface 1, in which the grooves are formed at a pitch ranging from about 10/M to about 30/M, forming a surface as smooth as a mirror.
[45] Demands for semiconductor chips have increased, and along with this, demands for better wafers at more reasonable price have increased too. To meet such demands of the customers, use of adhesives has to be reduced. The curved surface with the mirror pattern can address the above matter efficiently, as it provides more perfect contact between the supporting plate and the silicon ingot S, and thus requires less amount of adhesive.
[46] In order to bond the silicon ingot S and the supporting plate, mainly, epoxy bond
(release agent + active agent) or liquid type bond is used. The epoxy bond provides superior binding force than the liquid type bond, and thus is used more widely. The problem is that the epoxy bond is the mixture of release agent and active agent in certain proportions, and this can cause irregularities along the surface where the epoxy is applied, depending on how the worker applies the epoxy bond on the curved surface. Compared to the epoxy bond, the liquid type bond is easier to apply on the curved surface 1 of the supporting plate. Therefore, in consideration of the above, the use of the liquid type bond is currently growing in spite of lower binding force.
[47] Meanwhile, the securing portions 2 may be fixed to the vise with adequate securing tools such as clamps. In this case, the use of adhesive can be reduced significantly.
[48]
[49] The constitution of the supporting plate may include:
[50] 1) epoxy 38 ~ 42 weight%
[51] 2) reinforce filler 43 ~ 47 weight%
[52] 3) polyurethane 12 ~ 16 weight%
[53] 4) hardener 0.5 ~ 1.5 weight%
[54]
[55] The test has proven that a supporting plate having the above constitution exhibited various mechanical characteristics such as density, hardness, and strength, which are suitable for the supporting plate for slicing a silicon ingot.
[56] According to general wafer fabrication process, the wafers are separated from one another once the ingot is sliced off, and the ingot should not drop from the supporting plate before the wafer is separated from the ingot. The sliced wafers are separated from one another in the warm water whose temperature ranges from about 7O0C to about 8O0C, and it is important that the sliced wafer stays on the supporting plate while a mechanical tool such as robot arm separates the wafers from the ingot one by one. Conventionally, the wafers often fall from the supporting plate. However, with the supporting plate according to the embodiments of the present invention, the wafer is securely supported in place until the temperature approximately of 800C.
[57] Meanwhile, the supporting plate may be made from the mixture of the above- mentioned materials, and fabricated through a series of forming, cutting, and milling. Industrial Applicability
[58] Therefore, the supporting plate according to the embodiments of the present invention can be used efficiently for slicing a silicon ingot in the silicon wafer fabrication step of the semiconductor fabrication.

Claims

Claims
[1] A supporting plate for slicing a silicon ingot, comprising: a curved surface to contact the silicon ingot; and securing portions extending from both sides of the curved surface, wherein the securing portions are at a different height from terminating ends of the curved surface.
[2] The supporting plate of claim 1, wherein the curved surface has a radius of curvature which corresponds to that of the silicon ingot.
[3] The supporting plate of claim 1, wherein a lowermost portion of the curved surface is at a higher height than an uppermost portion of the securing portions.
[4] The supporting plate of claim 1, wherein the curved surface comprises at least one of a wave pattern, a light straight pattern, and a mirror pattern.
[5] The supporting plate of claim 4, wherein the wave pattern, the light straight pattern, and the mirror pattern have the pitches of 80/M-120/M, 40/M-60/M, and
10/M-30/M, respectively.
[6] The supporting plate of claim 1, comprising:
1) 38 ~ 42 weight% of epoxy
2) 43 ~ 47 weight% of reinforce filler
3) 12 ~ 16 weight% of polyurethane, and
4) 0.5 - 1.5 weight% of hardener.
[7] The supporting plate of one of claims 1 to 6, wherein the terminating ends of the curved surface have a width (F) in the range of 0<F≤0.5mm.
PCT/KR2007/004998 2007-08-24 2007-10-12 Supporting plate for slicing silicon ingot WO2009028756A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009530289A JP2009545473A (en) 2007-08-24 2007-10-12 Silicon ingot cutting cradle

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2007-0085325 2007-08-24
KR1020070085325A KR100884246B1 (en) 2007-08-24 2007-08-24 Supporting plate for slicing silicon ingot

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Publication Number Publication Date
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EP2520401A1 (en) * 2011-05-05 2012-11-07 Meyer Burger AG Method for fixing a single-crystal workpiece to be treated on a processing device
WO2012150517A1 (en) 2011-05-05 2012-11-08 Meyer Burger Ag Method for fixing a single-crystal workpiece to be treated on a processing device
CN103501975A (en) * 2011-05-05 2014-01-08 梅耶博格公司 Method for fixing a single-crystal workpiece to be treated on a processing device
WO2014111304A1 (en) * 2013-01-15 2014-07-24 Siltronic Ag Clampable cementing strip for a wire sawing process
CN105082386A (en) * 2015-08-10 2015-11-25 浙江辉弘光电能源有限公司 Silicon rod clamp for sawing-off machine

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