WO2009028611A1 - 発光素子 - Google Patents

発光素子 Download PDF

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Publication number
WO2009028611A1
WO2009028611A1 PCT/JP2008/065417 JP2008065417W WO2009028611A1 WO 2009028611 A1 WO2009028611 A1 WO 2009028611A1 JP 2008065417 W JP2008065417 W JP 2008065417W WO 2009028611 A1 WO2009028611 A1 WO 2009028611A1
Authority
WO
WIPO (PCT)
Prior art keywords
light
led chip
emitting device
conversion layer
color conversion
Prior art date
Application number
PCT/JP2008/065417
Other languages
English (en)
French (fr)
Inventor
Youji Urano
Kenichiro Tanaka
Original Assignee
Panasonic Electric Works Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Panasonic Electric Works Co., Ltd. filed Critical Panasonic Electric Works Co., Ltd.
Priority to US12/733,399 priority Critical patent/US20100200887A1/en
Priority to EP08828639.8A priority patent/EP2197048B1/en
Publication of WO2009028611A1 publication Critical patent/WO2009028611A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/50—Wavelength conversion elements
    • H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/36—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
    • H01L33/38—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched

Abstract

色変換層の薄膜化を図りつつ色むらを低減可能な発光素子を提供する。発光素子１０は、ＬＥＤチップ１１と、ＬＥＤチップ１１から放射される光によって励起されてＬＥＤチップ１１よりも長波長の光を放射する蛍光体を含有した透光性材料からなりＬＥＤチップ１１の上面側に形成された色変換層１２とを備える。ＬＥＤチップ１１は、上面側に当該ＬＥＤチップ１１の外周線の全周に沿った枠状の電極１１ａが形成され、当該枠状の電極１１ａに囲まれた領域において色変換層１２がＬＥＤチップ１１の上面側に形成されている。
PCT/JP2008/065417 2007-08-28 2008-08-28 発光素子 WO2009028611A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/733,399 US20100200887A1 (en) 2007-08-28 2008-08-28 Light emitting device
EP08828639.8A EP2197048B1 (en) 2007-08-28 2008-08-28 Light-emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007221864A JP5199623B2 (ja) 2007-08-28 2007-08-28 発光装置
JP2007-221864 2007-08-28

Publications (1)

Publication Number Publication Date
WO2009028611A1 true WO2009028611A1 (ja) 2009-03-05

Family

ID=40387325

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/065417 WO2009028611A1 (ja) 2007-08-28 2008-08-28 発光素子

Country Status (4)

Country Link
US (1) US20100200887A1 (ja)
EP (1) EP2197048B1 (ja)
JP (1) JP5199623B2 (ja)
WO (1) WO2009028611A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102044623A (zh) * 2009-10-23 2011-05-04 Lg伊诺特有限公司 发光器件、发光器件封装和照明系统
US20110316027A1 (en) * 2010-06-29 2011-12-29 Semileds Optoelectronics Co., Ltd., a Taiwanese Corporation Chip-type light emitting device having precisely coated wavelength-converting layer and packaged structure thereof
US20110316017A1 (en) * 2010-06-29 2011-12-29 Semileds Optoelectronics Co., Ltd., a Taiwanese Corporation Wafer-type light emitting device having precisely coated wavelength-converting layer

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4013077B2 (ja) * 2005-11-21 2007-11-28 松下電工株式会社 発光装置およびその製造方法
US10256385B2 (en) 2007-10-31 2019-04-09 Cree, Inc. Light emitting die (LED) packages and related methods
US9012938B2 (en) * 2010-04-09 2015-04-21 Cree, Inc. High reflective substrate of light emitting devices with improved light output
CN102588816B (zh) * 2011-01-07 2017-12-01 晶元光电股份有限公司 发光装置、混光装置及发光装置的制造方法
DE102011003969B4 (de) * 2011-02-11 2023-03-09 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Herstellung eines optoelektronischen Bauelements
US10243121B2 (en) 2011-06-24 2019-03-26 Cree, Inc. High voltage monolithic LED chip with improved reliability
DE102017101538B4 (de) 2017-01-26 2022-09-29 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Verfahren zur Klassifizierung von Halbleiterchips

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003505857A (ja) * 1999-03-01 2003-02-12 松下電器産業株式会社 フラットパネル固体光源
JP2003046124A (ja) 2001-07-26 2003-02-14 Matsushita Electric Works Ltd 発光素子及びその製造方法
JP2003243726A (ja) * 2001-12-14 2003-08-29 Nichia Chem Ind Ltd 発光装置およびその製造方法
JP2004221112A (ja) * 2003-01-09 2004-08-05 Sharp Corp 酸化物半導体発光素子
JP2005093601A (ja) 2003-09-16 2005-04-07 Stanley Electric Co Ltd 半導体発光装置
JP2006086191A (ja) 2004-09-14 2006-03-30 Nichia Chem Ind Ltd 発光装置
JP2007324411A (ja) * 2006-06-01 2007-12-13 Toshiba Corp 半導体発光素子及びその製造方法、並びに半導体発光素子を用いた照明装置

Family Cites Families (10)

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NL7018169A (ja) * 1970-03-09 1971-09-13
JP2001237461A (ja) * 2000-02-22 2001-08-31 Toshiba Corp 半導体発光素子
JP4822482B2 (ja) * 2001-05-23 2011-11-24 シチズン電子株式会社 発光ダイオードおよびその製造方法
JP2006086469A (ja) * 2004-09-17 2006-03-30 Matsushita Electric Ind Co Ltd 半導体発光装置、照明モジュール、照明装置及び半導体発光装置の製造方法
US7906788B2 (en) * 2004-12-22 2011-03-15 Panasonic Corporation Semiconductor light emitting device, illumination module, illumination apparatus, method for manufacturing semiconductor light emitting device, and method for manufacturing semiconductor light emitting element
JP4104013B2 (ja) * 2005-03-18 2008-06-18 株式会社フジクラ 発光デバイス及び照明装置
JP2007235103A (ja) * 2006-01-31 2007-09-13 Sanyo Electric Co Ltd 半導体発光装置
US8134946B2 (en) * 2007-06-27 2012-03-13 Nec Laboratories America, Inc. System and method for scheduling in relay-assisted wireless networks
US7866509B2 (en) * 2007-07-25 2011-01-11 The Coca-Cola Company Dispensing nozzle assembly
US8181824B2 (en) * 2008-10-15 2012-05-22 The Coca-Cola Company Systems and methods for predilution of sweetener

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003505857A (ja) * 1999-03-01 2003-02-12 松下電器産業株式会社 フラットパネル固体光源
JP2003046124A (ja) 2001-07-26 2003-02-14 Matsushita Electric Works Ltd 発光素子及びその製造方法
JP2003243726A (ja) * 2001-12-14 2003-08-29 Nichia Chem Ind Ltd 発光装置およびその製造方法
JP2004221112A (ja) * 2003-01-09 2004-08-05 Sharp Corp 酸化物半導体発光素子
JP2005093601A (ja) 2003-09-16 2005-04-07 Stanley Electric Co Ltd 半導体発光装置
JP2006086191A (ja) 2004-09-14 2006-03-30 Nichia Chem Ind Ltd 発光装置
JP2007324411A (ja) * 2006-06-01 2007-12-13 Toshiba Corp 半導体発光素子及びその製造方法、並びに半導体発光素子を用いた照明装置

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
See also references of EP2197048A4 *

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102044623A (zh) * 2009-10-23 2011-05-04 Lg伊诺特有限公司 发光器件、发光器件封装和照明系统
US20110316027A1 (en) * 2010-06-29 2011-12-29 Semileds Optoelectronics Co., Ltd., a Taiwanese Corporation Chip-type light emitting device having precisely coated wavelength-converting layer and packaged structure thereof
US20110316017A1 (en) * 2010-06-29 2011-12-29 Semileds Optoelectronics Co., Ltd., a Taiwanese Corporation Wafer-type light emitting device having precisely coated wavelength-converting layer
US8614453B2 (en) * 2010-06-29 2013-12-24 SemiLEDs Optoelectronics Co., Ltd. Chip-type light emitting device having precisely coated wavelength-converting layer and packaged structure thereof
US8648370B2 (en) * 2010-06-29 2014-02-11 SemiLEDs Optoelectronics Co., Ltd. Wafer-type light emitting device having precisely coated wavelength-converting layer

Also Published As

Publication number Publication date
EP2197048B1 (en) 2016-10-26
JP2009054895A (ja) 2009-03-12
JP5199623B2 (ja) 2013-05-15
EP2197048A1 (en) 2010-06-16
EP2197048A4 (en) 2013-10-02
US20100200887A1 (en) 2010-08-12

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