WO2009028611A1 - Dispositif émettant de la lumière - Google Patents
Dispositif émettant de la lumière Download PDFInfo
- Publication number
- WO2009028611A1 WO2009028611A1 PCT/JP2008/065417 JP2008065417W WO2009028611A1 WO 2009028611 A1 WO2009028611 A1 WO 2009028611A1 JP 2008065417 W JP2008065417 W JP 2008065417W WO 2009028611 A1 WO2009028611 A1 WO 2009028611A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- light
- led chip
- emitting device
- conversion layer
- color conversion
- Prior art date
Links
- 238000006243 chemical reaction Methods 0.000 abstract 3
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/50—Wavelength conversion elements
- H01L33/508—Wavelength conversion elements having a non-uniform spatial arrangement or non-uniform concentration, e.g. patterned wavelength conversion layer, wavelength conversion layer with a concentration gradient of the wavelength conversion material
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/36—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes
- H01L33/38—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the electrodes with a particular shape
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Led Device Packages (AREA)
- Led Devices (AREA)
Abstract
L'invention concerne un dispositif émettant de la lumière dans lequel une couche de conversion de couleur est formée mince, tout en réduisant une non-uniformité de couleur. L'invention concerne spécifiquement un dispositif émettant de la lumière (10) qui comprend une puce DEL (11) et une couche de conversion de couleur (10) qui est formée sur la surface supérieure de la puce DEL (11) et faite d'un matériau transmettant la lumière contenant un luminophore qui est excité par la lumière émise par la puce DEL (11) et émet de la lumière ayant une longueur d'onde plus grande que la lumière provenant de la puce DEL (11). La surface supérieure de la puce DEL (11) comporte une électrode de type cadre (11a) le long d'une périphérie externe entière de la puce DEL (11), et la couche de conversion de couleur (12) est formée sur la surface supérieure de la puce DEL (11) dans la région entourée par l'électrode de type cadre (11a).
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US12/733,399 US20100200887A1 (en) | 2007-08-28 | 2008-08-28 | Light emitting device |
EP08828639.8A EP2197048B1 (fr) | 2007-08-28 | 2008-08-28 | Dispositif émettant de la lumière |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007-221864 | 2007-08-28 | ||
JP2007221864A JP5199623B2 (ja) | 2007-08-28 | 2007-08-28 | 発光装置 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2009028611A1 true WO2009028611A1 (fr) | 2009-03-05 |
Family
ID=40387325
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/065417 WO2009028611A1 (fr) | 2007-08-28 | 2008-08-28 | Dispositif émettant de la lumière |
Country Status (4)
Country | Link |
---|---|
US (1) | US20100200887A1 (fr) |
EP (1) | EP2197048B1 (fr) |
JP (1) | JP5199623B2 (fr) |
WO (1) | WO2009028611A1 (fr) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102044623A (zh) * | 2009-10-23 | 2011-05-04 | Lg伊诺特有限公司 | 发光器件、发光器件封装和照明系统 |
US20110316017A1 (en) * | 2010-06-29 | 2011-12-29 | Semileds Optoelectronics Co., Ltd., a Taiwanese Corporation | Wafer-type light emitting device having precisely coated wavelength-converting layer |
US20110316027A1 (en) * | 2010-06-29 | 2011-12-29 | Semileds Optoelectronics Co., Ltd., a Taiwanese Corporation | Chip-type light emitting device having precisely coated wavelength-converting layer and packaged structure thereof |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4013077B2 (ja) * | 2005-11-21 | 2007-11-28 | 松下電工株式会社 | 発光装置およびその製造方法 |
US10256385B2 (en) | 2007-10-31 | 2019-04-09 | Cree, Inc. | Light emitting die (LED) packages and related methods |
US9012938B2 (en) * | 2010-04-09 | 2015-04-21 | Cree, Inc. | High reflective substrate of light emitting devices with improved light output |
CN102588816B (zh) * | 2011-01-07 | 2017-12-01 | 晶元光电股份有限公司 | 发光装置、混光装置及发光装置的制造方法 |
DE102011003969B4 (de) * | 2011-02-11 | 2023-03-09 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Herstellung eines optoelektronischen Bauelements |
US10243121B2 (en) | 2011-06-24 | 2019-03-26 | Cree, Inc. | High voltage monolithic LED chip with improved reliability |
DE102017101538B4 (de) | 2017-01-26 | 2022-09-29 | OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung | Verfahren zur Klassifizierung von Halbleiterchips |
Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003505857A (ja) * | 1999-03-01 | 2003-02-12 | 松下電器産業株式会社 | フラットパネル固体光源 |
JP2003046124A (ja) | 2001-07-26 | 2003-02-14 | Matsushita Electric Works Ltd | 発光素子及びその製造方法 |
JP2003243726A (ja) * | 2001-12-14 | 2003-08-29 | Nichia Chem Ind Ltd | 発光装置およびその製造方法 |
JP2004221112A (ja) * | 2003-01-09 | 2004-08-05 | Sharp Corp | 酸化物半導体発光素子 |
JP2005093601A (ja) | 2003-09-16 | 2005-04-07 | Stanley Electric Co Ltd | 半導体発光装置 |
JP2006086191A (ja) | 2004-09-14 | 2006-03-30 | Nichia Chem Ind Ltd | 発光装置 |
JP2007324411A (ja) * | 2006-06-01 | 2007-12-13 | Toshiba Corp | 半導体発光素子及びその製造方法、並びに半導体発光素子を用いた照明装置 |
Family Cites Families (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
NL7018169A (fr) * | 1970-03-09 | 1971-09-13 | ||
JP2001237461A (ja) * | 2000-02-22 | 2001-08-31 | Toshiba Corp | 半導体発光素子 |
JP4822482B2 (ja) * | 2001-05-23 | 2011-11-24 | シチズン電子株式会社 | 発光ダイオードおよびその製造方法 |
JP2006086469A (ja) * | 2004-09-17 | 2006-03-30 | Matsushita Electric Ind Co Ltd | 半導体発光装置、照明モジュール、照明装置及び半導体発光装置の製造方法 |
JP4995722B2 (ja) * | 2004-12-22 | 2012-08-08 | パナソニック株式会社 | 半導体発光装置、照明モジュール、および照明装置 |
JP4104013B2 (ja) * | 2005-03-18 | 2008-06-18 | 株式会社フジクラ | 発光デバイス及び照明装置 |
JP2007235103A (ja) * | 2006-01-31 | 2007-09-13 | Sanyo Electric Co Ltd | 半導体発光装置 |
US8134946B2 (en) * | 2007-06-27 | 2012-03-13 | Nec Laboratories America, Inc. | System and method for scheduling in relay-assisted wireless networks |
US7866509B2 (en) * | 2007-07-25 | 2011-01-11 | The Coca-Cola Company | Dispensing nozzle assembly |
US8181824B2 (en) * | 2008-10-15 | 2012-05-22 | The Coca-Cola Company | Systems and methods for predilution of sweetener |
-
2007
- 2007-08-28 JP JP2007221864A patent/JP5199623B2/ja active Active
-
2008
- 2008-08-28 US US12/733,399 patent/US20100200887A1/en not_active Abandoned
- 2008-08-28 EP EP08828639.8A patent/EP2197048B1/fr not_active Not-in-force
- 2008-08-28 WO PCT/JP2008/065417 patent/WO2009028611A1/fr active Application Filing
Patent Citations (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2003505857A (ja) * | 1999-03-01 | 2003-02-12 | 松下電器産業株式会社 | フラットパネル固体光源 |
JP2003046124A (ja) | 2001-07-26 | 2003-02-14 | Matsushita Electric Works Ltd | 発光素子及びその製造方法 |
JP2003243726A (ja) * | 2001-12-14 | 2003-08-29 | Nichia Chem Ind Ltd | 発光装置およびその製造方法 |
JP2004221112A (ja) * | 2003-01-09 | 2004-08-05 | Sharp Corp | 酸化物半導体発光素子 |
JP2005093601A (ja) | 2003-09-16 | 2005-04-07 | Stanley Electric Co Ltd | 半導体発光装置 |
JP2006086191A (ja) | 2004-09-14 | 2006-03-30 | Nichia Chem Ind Ltd | 発光装置 |
JP2007324411A (ja) * | 2006-06-01 | 2007-12-13 | Toshiba Corp | 半導体発光素子及びその製造方法、並びに半導体発光素子を用いた照明装置 |
Non-Patent Citations (1)
Title |
---|
See also references of EP2197048A4 * |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102044623A (zh) * | 2009-10-23 | 2011-05-04 | Lg伊诺特有限公司 | 发光器件、发光器件封装和照明系统 |
US20110316017A1 (en) * | 2010-06-29 | 2011-12-29 | Semileds Optoelectronics Co., Ltd., a Taiwanese Corporation | Wafer-type light emitting device having precisely coated wavelength-converting layer |
US20110316027A1 (en) * | 2010-06-29 | 2011-12-29 | Semileds Optoelectronics Co., Ltd., a Taiwanese Corporation | Chip-type light emitting device having precisely coated wavelength-converting layer and packaged structure thereof |
US8614453B2 (en) * | 2010-06-29 | 2013-12-24 | SemiLEDs Optoelectronics Co., Ltd. | Chip-type light emitting device having precisely coated wavelength-converting layer and packaged structure thereof |
US8648370B2 (en) * | 2010-06-29 | 2014-02-11 | SemiLEDs Optoelectronics Co., Ltd. | Wafer-type light emitting device having precisely coated wavelength-converting layer |
Also Published As
Publication number | Publication date |
---|---|
EP2197048A1 (fr) | 2010-06-16 |
JP2009054895A (ja) | 2009-03-12 |
US20100200887A1 (en) | 2010-08-12 |
EP2197048B1 (fr) | 2016-10-26 |
EP2197048A4 (fr) | 2013-10-02 |
JP5199623B2 (ja) | 2013-05-15 |
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