WO2009028394A1 - チャージポンプ式昇圧回路 - Google Patents

チャージポンプ式昇圧回路 Download PDF

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Publication number
WO2009028394A1
WO2009028394A1 PCT/JP2008/064903 JP2008064903W WO2009028394A1 WO 2009028394 A1 WO2009028394 A1 WO 2009028394A1 JP 2008064903 W JP2008064903 W JP 2008064903W WO 2009028394 A1 WO2009028394 A1 WO 2009028394A1
Authority
WO
WIPO (PCT)
Prior art keywords
voltage
vout
integer times
charge pump
booster circuit
Prior art date
Application number
PCT/JP2008/064903
Other languages
English (en)
French (fr)
Inventor
Takashige Ogata
Original Assignee
Sanyo Electric Co., Ltd.
Sanyo Semiconductor Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sanyo Electric Co., Ltd., Sanyo Semiconductor Co., Ltd. filed Critical Sanyo Electric Co., Ltd.
Publication of WO2009028394A1 publication Critical patent/WO2009028394A1/ja

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Classifications

    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00—Conversion of dc power input into dc power output
    • H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/06—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider
    • H02M3/07—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using resistors or capacitors, e.g. potential divider using capacitors charged and discharged alternately by semiconductor devices with control electrode, e.g. charge pumps
    • H02M3/073—Charge pumps of the Schenkel-type

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)

Abstract

　チャージポンプ式昇圧回路において、入力電圧ＶＩＮの非整数倍の出力電圧ＶＯＵＴを生成する場合、整数倍の電圧から非整数倍の電圧を生成するレギュレータを高耐圧に構成する必要がある。 　昇圧された出力電圧ＶＯＵＴを抵抗（Ｒ１），（Ｒ２）で分圧する。オペアンプ（Ａ）は分圧電圧ＶＢがＶＲＥＦとなるように、その出力電圧ＶＡでコンデンサ駆動回路（３０），（３２）の駆動クロックの振幅を制御する。これによりＶＯＵＴはフィードバック制御され、ＶＲＥＦ及び抵抗比（Ｒ１/Ｒ２）に応じて設定される非整数倍のＶＯＵＴが出力端子ＮＯＵＴから取り出される。
PCT/JP2008/064903 2007-08-30 2008-08-21 チャージポンプ式昇圧回路 WO2009028394A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-224885 2007-08-30
JP2007224885A JP2009060702A (ja) 2007-08-30 2007-08-30 チャージポンプ式昇圧回路

Publications (1)

Publication Number Publication Date
WO2009028394A1 true WO2009028394A1 (ja) 2009-03-05

Family

ID=40387116

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064903 WO2009028394A1 (ja) 2007-08-30 2008-08-21 チャージポンプ式昇圧回路

Country Status (2)

Country Link
JP (1) JP2009060702A (ja)
WO (1) WO2009028394A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011023672A1 (en) * 2009-08-25 2011-03-03 Store Electronic Systems High efficiency regulated charge pump
WO2011052366A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
CN102263499A (zh) * 2010-05-27 2011-11-30 上海宏力半导体制造有限公司 时钟产生电路和电荷泵系统
CN102280997A (zh) * 2010-06-09 2011-12-14 上海宏力半导体制造有限公司 电荷泵系统及存储器
CN102385404A (zh) * 2010-08-26 2012-03-21 瑞萨电子株式会社 半导体芯片
US8922182B2 (en) 2009-12-04 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. DC converter circuit and power supply circuit
US8963517B2 (en) 2009-10-21 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit comprising transistor which includes an oixide semiconductor

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5707922B2 (ja) * 2010-12-17 2015-04-30 富士通セミコンダクター株式会社 電源コントローラ、および電子機器
JP6679402B2 (ja) * 2016-04-28 2020-04-15 ラピスセミコンダクタ株式会社 昇圧回路
US11509214B2 (en) * 2018-04-26 2022-11-22 Micron Technology, Inc. Apparatuses and methods for controlling charge pump circuits

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002171748A (ja) * 2000-09-19 2002-06-14 Rohm Co Ltd Ｄｃ／ｄｃコンバータ
WO2002061931A1 (fr) * 2001-01-30 2002-08-08 Hitachi, Ltd. Circuit d'amplification de puissance, dispositif d'affichage a cristaux liquides et materiel electronique portable

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002171748A (ja) * 2000-09-19 2002-06-14 Rohm Co Ltd Ｄｃ／ｄｃコンバータ
WO2002061931A1 (fr) * 2001-01-30 2002-08-08 Hitachi, Ltd. Circuit d'amplification de puissance, dispositif d'affichage a cristaux liquides et materiel electronique portable

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011023672A1 (en) * 2009-08-25 2011-03-03 Store Electronic Systems High efficiency regulated charge pump
AU2010288620B2 (en) * 2009-08-25 2014-10-09 Vusiongroup High efficiency regulated charge pump
US8593213B2 (en) 2009-08-25 2013-11-26 Store Electronic Systems High efficiency regulated charge pump
US9929281B2 (en) 2009-10-21 2018-03-27 Semiconductor Energy Laboratory Co., Ltd. Transisitor comprising oxide semiconductor
US9431546B2 (en) 2009-10-21 2016-08-30 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device comprising oxide semiconductor material transistor having reduced off current
US8963517B2 (en) 2009-10-21 2015-02-24 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit comprising transistor which includes an oixide semiconductor
US8766608B2 (en) 2009-10-30 2014-07-01 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit and semiconductor device, including transistor using oxide semiconductor
US9236402B2 (en) 2009-10-30 2016-01-12 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
WO2011052366A1 (en) * 2009-10-30 2011-05-05 Semiconductor Energy Laboratory Co., Ltd. Voltage regulator circuit
US8922182B2 (en) 2009-12-04 2014-12-30 Semiconductor Energy Laboratory Co., Ltd. DC converter circuit and power supply circuit
US9270173B2 (en) 2009-12-04 2016-02-23 Semiconductor Energy Laboratory Co., Ltd. DC converter circuit and power supply circuit
CN102263499A (zh) * 2010-05-27 2011-11-30 上海宏力半导体制造有限公司 时钟产生电路和电荷泵系统
CN102280997A (zh) * 2010-06-09 2011-12-14 上海宏力半导体制造有限公司 电荷泵系统及存储器
CN102385404A (zh) * 2010-08-26 2012-03-21 瑞萨电子株式会社 半导体芯片
CN102385404B (zh) * 2010-08-26 2015-06-17 瑞萨电子株式会社 半导体芯片

Also Published As

Publication number Publication date
JP2009060702A (ja) 2009-03-19

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