WO2009028325A1 - シンチレータパネル - Google Patents

シンチレータパネル Download PDF

Info

Publication number
WO2009028325A1
WO2009028325A1 PCT/JP2008/064412 JP2008064412W WO2009028325A1 WO 2009028325 A1 WO2009028325 A1 WO 2009028325A1 JP 2008064412 W JP2008064412 W JP 2008064412W WO 2009028325 A1 WO2009028325 A1 WO 2009028325A1
Authority
WO
WIPO (PCT)
Prior art keywords
scintillator panel
substrate
phosphor layer
scintillator
panel
Prior art date
Application number
PCT/JP2008/064412
Other languages
English (en)
French (fr)
Inventor
Yasushi Nagata
Takehiko Shoji
Original Assignee
Konica Minolta Medical & Graphic, Inc.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Konica Minolta Medical & Graphic, Inc. filed Critical Konica Minolta Medical & Graphic, Inc.
Publication of WO2009028325A1 publication Critical patent/WO2009028325A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0232—Optical elements or arrangements associated with the device
    • H01L31/02322—Optical elements or arrangements associated with the device comprising luminescent members, e.g. fluorescent sheets upon the device
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01T—MEASUREMENT OF NUCLEAR OR X-RADIATION
    • G01T1/00—Measuring X-radiation, gamma radiation, corpuscular radiation, or cosmic radiation
    • G01T1/16—Measuring radiation intensity
    • G01T1/20—Measuring radiation intensity with scintillation detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144—Devices controlled by radiation
    • H01L27/146—Imager structures
    • H01L27/14643—Photodiode arrays; MOS imagers
    • H01L27/14658—X-ray, gamma-ray or corpuscular radiation imagers
    • H01L27/14663—Indirect radiation imagers, e.g. using luminescent members

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • High Energy & Nuclear Physics (AREA)
  • Molecular Biology (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Toxicology (AREA)
  • Conversion Of X-Rays Into Visible Images (AREA)
  • Measurement Of Radiation (AREA)

Abstract

　シンチレータパネルと平面受光素子面間での鮮鋭性の劣化が少ないシンチレータパネルは、可とう性を有する炭素を主成分とした基板上に蛍光体層と該蛍光体層を覆うように配置した保護膜とからなるシンチレータパネルであって、該基板の密度が０．４～２．５ｇ／ｃｍ3であることを特徴とするシンチレータパネルによって得られる。
PCT/JP2008/064412 2007-08-24 2008-08-11 シンチレータパネル WO2009028325A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007218197 2007-08-24
JP2007-218197 2007-08-24

Publications (1)

Publication Number Publication Date
WO2009028325A1 true WO2009028325A1 (ja) 2009-03-05

Family

ID=40387051

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064412 WO2009028325A1 (ja) 2007-08-24 2008-08-11 シンチレータパネル

Country Status (1)

Country Link
WO (1) WO2009028325A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110753973A (zh) * 2017-06-15 2020-02-04 佳能株式会社 闪烁体板、放射线成像装置和闪烁体板的制造方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004061116A (ja) * 2002-07-24 2004-02-26 Canon Inc 放射線検出装置及びシステム
JP2004251882A (ja) * 2002-06-28 2004-09-09 Agfa Gevaert Nv 非晶質（ａ−Ｃ）炭素層を含む支持体を備えた結合剤のない貯蔵燐光体スクリーン
JP2004340928A (ja) * 2003-02-26 2004-12-02 Agfa Gevaert Nv 貯蔵燐光体パネル、放射線像センサー及びその製造方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004251882A (ja) * 2002-06-28 2004-09-09 Agfa Gevaert Nv 非晶質（ａ−Ｃ）炭素層を含む支持体を備えた結合剤のない貯蔵燐光体スクリーン
JP2004061116A (ja) * 2002-07-24 2004-02-26 Canon Inc 放射線検出装置及びシステム
JP2004340928A (ja) * 2003-02-26 2004-12-02 Agfa Gevaert Nv 貯蔵燐光体パネル、放射線像センサー及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110753973A (zh) * 2017-06-15 2020-02-04 佳能株式会社 闪烁体板、放射线成像装置和闪烁体板的制造方法
CN110753973B (zh) * 2017-06-15 2023-10-27 佳能株式会社 闪烁体板、放射线成像装置和闪烁体板的制造方法

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