WO2009025346A1 - データ保持装置 - Google Patents

データ保持装置 Download PDF

Info

Publication number
WO2009025346A1
WO2009025346A1 PCT/JP2008/064971 JP2008064971W WO2009025346A1 WO 2009025346 A1 WO2009025346 A1 WO 2009025346A1 JP 2008064971 W JP2008064971 W JP 2008064971W WO 2009025346 A1 WO2009025346 A1 WO 2009025346A1
Authority
WO
WIPO (PCT)
Prior art keywords
loop
holding device
data holding
structure part
loop structure
Prior art date
Application number
PCT/JP2008/064971
Other languages
English (en)
French (fr)
Inventor
Hiromitsu Kimura
Original Assignee
Rohm Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co., Ltd. filed Critical Rohm Co., Ltd.
Priority to JP2009529070A priority Critical patent/JP5421779B2/ja
Priority to US12/674,220 priority patent/US8254156B2/en
Priority to EP08792642A priority patent/EP2182634A1/en
Priority to CN2008801038456A priority patent/CN101785185B/zh
Publication of WO2009025346A1 publication Critical patent/WO2009025346A1/ja

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/45—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of non-linear magnetic or dielectric devices
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
    • G11C11/22—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using ferroelectric elements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0008—Arrangements for reducing power consumption
    • H03K19/0016—Arrangements for reducing power consumption by using a control or a clock signal, e.g. in order to apply power supply
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356008—Bistable circuits ensuring a predetermined initial state when the supply voltage has been applied; storing the actual state when the supply voltage fails
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C21/00—Digital stores in which the information circulates continuously

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Static Random-Access Memory (AREA)
  • Dram (AREA)
  • Logic Circuits (AREA)

Abstract

　本発明に係るデータ保持装置は、ループ状に接続された論理ゲート（図１ではインバータＩＮＶ３、ＩＮＶ４）を用いてデータを保持するループ構造部ＬＯＯＰと、強誘電体素子のヒステリシス特性を用いてループ構造部ＬＯＯＰに保持されたデータを不揮発的に記憶する不揮発性記憶部（ＣＬ１ａ、ＣＬ１ｂ、ＣＬ２ａ、ＣＬ２ｂ、Ｑ１ａ、Ｑ１ｂ、Ｑ２ａ、Ｑ２ｂ）と、ループ構造部ＬＯＯＰと前記不揮発性記憶部とを電気的に分離する回路分離部（ＭＵＸ１、ＭＵＸ２、ＩＮＶ６、ＩＮＶ７、ＳＷ３、ＳＷ４）と、を有して成る構成とされている。
PCT/JP2008/064971 2007-08-22 2008-08-22 データ保持装置 WO2009025346A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009529070A JP5421779B2 (ja) 2007-08-22 2008-08-22 データ保持装置
US12/674,220 US8254156B2 (en) 2007-08-22 2008-08-22 Data holding device
EP08792642A EP2182634A1 (en) 2007-08-22 2008-08-22 Data holding device
CN2008801038456A CN101785185B (zh) 2007-08-22 2008-08-22 数据保持装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007215599 2007-08-22
JP2007-215599 2007-08-22

Publications (1)

Publication Number Publication Date
WO2009025346A1 true WO2009025346A1 (ja) 2009-02-26

Family

ID=40378246

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/064971 WO2009025346A1 (ja) 2007-08-22 2008-08-22 データ保持装置

Country Status (5)

Country Link
US (1) US8254156B2 (ja)
EP (1) EP2182634A1 (ja)
JP (1) JP5421779B2 (ja)
CN (1) CN101785185B (ja)
WO (1) WO2009025346A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011166672A (ja) * 2010-02-15 2011-08-25 Rohm Co Ltd データ保持装置
US8837194B2 (en) 2011-04-01 2014-09-16 Rohm Co., Ltd. Data holding device and logic operation circuit using the same
JP2015180052A (ja) * 2014-02-28 2015-10-08 株式会社半導体エネルギー研究所 半導体装置及びその駆動方法、並びに電子機器

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5863160B2 (ja) * 2010-12-21 2016-02-16 ローム株式会社 制御回路及びこれを用いたデータ保持装置
CN105653987B (zh) * 2015-12-25 2019-08-20 延锋伟世通电子科技（上海）有限公司 一种非正常失电状态记忆电路
SG11201901210UA (en) * 2016-08-31 2019-03-28 Micron Technology Inc Ferroelectric memory cells
WO2018044510A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Apparatuses and methods including two transistor-one capacitor memory and for accessing same
CN109643570B (zh) 2016-08-31 2023-11-21 美光科技公司 包括铁电存储器且用于操作铁电存储器的装置及方法
WO2018044487A1 (en) 2016-08-31 2018-03-08 Micron Technology, Inc. Apparatuses and methods including ferroelectric memory and for accessing ferroelectric memory
US10224101B2 (en) 2016-10-04 2019-03-05 Rohm Co., Ltd. Data holding device, nonvolatile data holding device, and data reading method
US10867675B2 (en) 2017-07-13 2020-12-15 Micron Technology, Inc. Apparatuses and methods for memory including ferroelectric memory cells and dielectric memory cells

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10112191A (ja) * 1996-10-04 1998-04-28 Hitachi Ltd 半導体装置
JPH10255482A (ja) * 1997-03-13 1998-09-25 Mitsubishi Electric Corp 強誘電体メモリ
JP2004263886A (ja) * 2003-02-07 2004-09-24 Ebara Corp 廃棄物のガス化溶融システム及びガス化溶融方法
JP3737472B2 (ja) 2002-12-02 2006-01-18 ローム株式会社 データ保持装置およびデータ保持方法

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003263886A (ja) 2002-03-08 2003-09-19 Fujitsu Ltd ビット線容量を最適化できる強誘電体メモリ
US6788567B2 (en) * 2002-12-02 2004-09-07 Rohm Co., Ltd. Data holding device and data holding method
WO2004084227A1 (ja) * 2003-03-19 2004-09-30 Fujitsu Limited 半導体記憶装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10112191A (ja) * 1996-10-04 1998-04-28 Hitachi Ltd 半導体装置
JPH10255482A (ja) * 1997-03-13 1998-09-25 Mitsubishi Electric Corp 強誘電体メモリ
JP3737472B2 (ja) 2002-12-02 2006-01-18 ローム株式会社 データ保持装置およびデータ保持方法
JP2004263886A (ja) * 2003-02-07 2004-09-24 Ebara Corp 廃棄物のガス化溶融システム及びガス化溶融方法

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011166672A (ja) * 2010-02-15 2011-08-25 Rohm Co Ltd データ保持装置
CN102195618A (zh) * 2010-02-15 2011-09-21 罗姆股份有限公司 数据保持器件
US8670263B2 (en) 2010-02-15 2014-03-11 Rohm Co., Ltd. Data holding device
US8837194B2 (en) 2011-04-01 2014-09-16 Rohm Co., Ltd. Data holding device and logic operation circuit using the same
US8947904B2 (en) 2011-04-01 2015-02-03 Rohm Co., Ltd. Data holding device and logic operation circuit using the same
US9064593B2 (en) 2011-04-01 2015-06-23 Rohm Co., Ltd. Data holding device and logic operation circuit using the same
JP2015180052A (ja) * 2014-02-28 2015-10-08 株式会社半導体エネルギー研究所 半導体装置及びその駆動方法、並びに電子機器

Also Published As

Publication number Publication date
JPWO2009025346A1 (ja) 2010-11-25
US8254156B2 (en) 2012-08-28
US20110128769A1 (en) 2011-06-02
EP2182634A1 (en) 2010-05-05
CN101785185A (zh) 2010-07-21
JP5421779B2 (ja) 2014-02-19
CN101785185B (zh) 2012-07-04

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