WO2009020183A1 - 半導体素子及び半導体素子の製造方法 - Google Patents

半導体素子及び半導体素子の製造方法 Download PDF

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Publication number
WO2009020183A1
WO2009020183A1 PCT/JP2008/064227 JP2008064227W WO2009020183A1 WO 2009020183 A1 WO2009020183 A1 WO 2009020183A1 JP 2008064227 W JP2008064227 W JP 2008064227W WO 2009020183 A1 WO2009020183 A1 WO 2009020183A1
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Prior art keywords
semiconductor element
production
semiconductor layer
semiconductor
mgxzn1
Prior art date
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Ceased
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PCT/JP2008/064227
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English (en)
French (fr)
Inventor
Ken Nakahara
Shunsuke Akasaka
Masashi Kawasaki
Akira Ohtomo
Atsushi Tsukazaki
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Rohm Co Ltd
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Rohm Co Ltd
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Priority to CN200880108746A priority Critical patent/CN101821865A/zh
Priority to US12/672,432 priority patent/US20120181531A1/en
Publication of WO2009020183A1 publication Critical patent/WO2009020183A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • C—CHEMISTRY; METALLURGY
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    • C01G9/00—Compounds of zinc
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
    • C01G9/00—Compounds of zinc
    • C01G9/02—Oxides; Hydroxides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
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    • C—CHEMISTRY; METALLURGY
    • C30—CRYSTAL GROWTH
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    • C30B29/00—Single crystals or homogeneous polycrystalline material with defined structure characterised by the material or by their shape
    • C30B29/10—Inorganic compounds or compositions
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
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    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Metallurgy (AREA)
  • Inorganic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mechanical Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Led Devices (AREA)
  • Inorganic Compounds Of Heavy Metals (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

　ＭｇxＺｎ1-xＯ（０≦ｘ＜１）を主成分とする半導体層を備え、半導体層に含まれる不純物としてのマンガンの濃度が１×１０16ｃｍ-3以下である。
PCT/JP2008/064227 2007-08-08 2008-08-07 半導体素子及び半導体素子の製造方法 Ceased WO2009020183A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200880108746A CN101821865A (zh) 2007-08-08 2008-08-07 半导体元件以及半导体元件的制造方法
US12/672,432 US20120181531A1 (en) 2007-08-08 2008-08-07 Semiconductor element and manufacturing method of the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007206930 2007-08-08
JP2007-206930 2007-08-08

Publications (1)

Publication Number Publication Date
WO2009020183A1 true WO2009020183A1 (ja) 2009-02-12

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PCT/JP2008/064227 Ceased WO2009020183A1 (ja) 2007-08-08 2008-08-07 半導体素子及び半導体素子の製造方法

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US (1) US20120181531A1 (ja)
JP (1) JP2009060098A (ja)
CN (1) CN101821865A (ja)
TW (1) TW200913331A (ja)
WO (1) WO2009020183A1 (ja)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5800291B2 (ja) * 2011-04-13 2015-10-28 ローム株式会社 ＺｎＯ系半導体素子およびその製造方法
EP2765583B1 (en) 2011-10-06 2016-11-16 Japan Science and Technology Agency Laminate
CN106086796A (zh) * 2016-06-01 2016-11-09 深圳大学 一种立方结构MgZnO薄膜及其制备方法
CN105951045A (zh) * 2016-06-01 2016-09-21 深圳大学 一种立方结构MgZnO薄膜及其制备方法、紫外探测器及其制备方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04303922A (ja) * 1991-03-29 1992-10-27 Hitachi Ltd 分子線結晶成長装置および化合物半導体薄膜形成方法並びに半導体装置の製造方法
JP2002075866A (ja) * 2000-08-28 2002-03-15 National Institute Of Advanced Industrial & Technology ラジカルセル装置およびｉｉ−ｖｉ族化合物半導体装置の製法
JP2004193446A (ja) * 2002-12-13 2004-07-08 Sanyo Electric Co Ltd 半導体装置の製造方法および薄膜トランジスタの製造方法
JP2004304166A (ja) * 2003-03-14 2004-10-28 Rohm Co Ltd ＺｎＯ系半導体素子

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH04303922A (ja) * 1991-03-29 1992-10-27 Hitachi Ltd 分子線結晶成長装置および化合物半導体薄膜形成方法並びに半導体装置の製造方法
JP2002075866A (ja) * 2000-08-28 2002-03-15 National Institute Of Advanced Industrial & Technology ラジカルセル装置およびｉｉ−ｖｉ族化合物半導体装置の製法
JP2004193446A (ja) * 2002-12-13 2004-07-08 Sanyo Electric Co Ltd 半導体装置の製造方法および薄膜トランジスタの製造方法
JP2004304166A (ja) * 2003-03-14 2004-10-28 Rohm Co Ltd ＺｎＯ系半導体素子

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
O. SCHMIDT ET AL.: "Electrical characterization of ZnO including analysis of surface conductivity", APPL. PHYS. A, vol. 88, 22 March 2007 (2007-03-22), pages 71 - 75, XP019515442 *

Also Published As

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JP2009060098A (ja) 2009-03-19
TW200913331A (en) 2009-03-16
US20120181531A1 (en) 2012-07-19
CN101821865A (zh) 2010-09-01

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