WO2009019948A1 - 磁気記録装置及び磁化固定方法 - Google Patents

磁気記録装置及び磁化固定方法 Download PDF

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Publication number
WO2009019948A1
WO2009019948A1 PCT/JP2008/062299 JP2008062299W WO2009019948A1 WO 2009019948 A1 WO2009019948 A1 WO 2009019948A1 JP 2008062299 W JP2008062299 W JP 2008062299W WO 2009019948 A1 WO2009019948 A1 WO 2009019948A1
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WO
WIPO (PCT)
Prior art keywords
magnetization
magnetization fixed
recording layer
magnetic recording
region
Prior art date
Application number
PCT/JP2008/062299
Other languages
English (en)
French (fr)
Inventor
Tetsuhiro Suzuki
Shunsuke Fukami
Norikazu Ohshima
Kiyokazu Nagahara
Nobuyuki Ishiwata
Original Assignee
Nec Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Nec Corporation filed Critical Nec Corporation
Priority to JP2009526373A priority Critical patent/JP5278769B2/ja
Publication of WO2009019948A1 publication Critical patent/WO2009019948A1/ja

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1659—Cell access
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1673—Reading or sensing circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
    • G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
    • G11C11/165—Auxiliary circuits
    • G11C11/1675—Writing or programming circuits or methods
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C19/00—Digital stores in which the information is moved stepwise, e.g. shift registers
    • G11C19/02—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements
    • G11C19/08—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure
    • G11C19/0808—Digital stores in which the information is moved stepwise, e.g. shift registers using magnetic elements using thin films in plane structure using magnetic domain propagation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N50/00—Galvanomagnetic devices
    • H10N50/10—Magnetoresistive devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
    • H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
    • H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Chemical & Material Sciences (AREA)
  • Nanotechnology (AREA)
  • Physics & Mathematics (AREA)
  • Mathematical Physics (AREA)
  • Theoretical Computer Science (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Mram Or Spin Memory Techniques (AREA)
  • Hall/Mr Elements (AREA)
  • Magnetic Record Carriers (AREA)

Abstract

　磁気記録装置は、垂直磁気異方性を有する強磁性層である磁気記録層を備える。磁気記録層は、磁化反転領域と、磁化反転領域の第１境界に接続され磁化の向きが第１方向に固定された第１磁化固定領域と、磁化反転領域の第２境界に接続され磁化の向きが第１方向と逆の第２方向に固定された第２磁化固定領域と、を有する。磁気記録層が形成される面内において、磁気記録層の周縁に対する接線の傾きの符号を考える。このとき、第１磁化固定領域に関する上記符号のマジョリティは、第２磁化固定領域に関する上記符号のマジョリティの逆である。
PCT/JP2008/062299 2007-08-08 2008-07-07 磁気記録装置及び磁化固定方法 WO2009019948A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2009526373A JP5278769B2 (ja) 2007-08-08 2008-07-07 磁気記録装置及び磁化固定方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-206143 2007-08-08
JP2007206143 2007-08-08

Publications (1)

Publication Number Publication Date
WO2009019948A1 true WO2009019948A1 (ja) 2009-02-12

Family

ID=40341185

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062299 WO2009019948A1 (ja) 2007-08-08 2008-07-07 磁気記録装置及び磁化固定方法

Country Status (2)

Country Link
JP (1) JP5278769B2 (ja)
WO (1) WO2009019948A1 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012002156A1 (ja) * 2010-06-29 2012-01-05 日本電気株式会社 磁気メモリ素子、磁気メモリ
JP2013195592A (ja) * 2012-03-17 2013-09-30 Nippon Hoso Kyokai <Nhk> 光変調素子および空間光変調器
JP2013195594A (ja) * 2012-03-17 2013-09-30 Nippon Hoso Kyokai <Nhk> 光変調素子および空間光変調器
JP2013195590A (ja) * 2012-03-17 2013-09-30 Nippon Hoso Kyokai <Nhk> 光変調素子および空間光変調器
JP2013195591A (ja) * 2012-03-17 2013-09-30 Nippon Hoso Kyokai <Nhk> 光変調素子および空間光変調器
JP2013195589A (ja) * 2012-03-17 2013-09-30 Nippon Hoso Kyokai <Nhk> 光変調素子および空間光変調器
JP2013195593A (ja) * 2012-03-17 2013-09-30 Nippon Hoso Kyokai <Nhk> 光変調素子および空間光変調器
WO2014065049A1 (ja) * 2012-10-25 2014-05-01 日本電気株式会社 磁壁移動型メモリセル及びその初期化処理方法

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005191032A (ja) * 2003-12-24 2005-07-14 Toshiba Corp 磁気記憶装置及び磁気情報の書込み方法
JP2006073930A (ja) * 2004-09-06 2006-03-16 Canon Inc 磁壁移動を利用した磁気抵抗効果素子の磁化状態の変化方法及び該方法を用いた磁気メモリ素子、固体磁気メモリ
WO2007020823A1 (ja) * 2005-08-15 2007-02-22 Nec Corporation 磁気メモリセル、磁気ランダムアクセスメモリ、及び磁気ランダムアクセスメモリへのデータ読み書き方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005191032A (ja) * 2003-12-24 2005-07-14 Toshiba Corp 磁気記憶装置及び磁気情報の書込み方法
JP2006073930A (ja) * 2004-09-06 2006-03-16 Canon Inc 磁壁移動を利用した磁気抵抗効果素子の磁化状態の変化方法及び該方法を用いた磁気メモリ素子、固体磁気メモリ
WO2007020823A1 (ja) * 2005-08-15 2007-02-22 Nec Corporation 磁気メモリセル、磁気ランダムアクセスメモリ、及び磁気ランダムアクセスメモリへのデータ読み書き方法

Cited By (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012002156A1 (ja) * 2010-06-29 2012-01-05 日本電気株式会社 磁気メモリ素子、磁気メモリ
US8791534B2 (en) 2010-06-29 2014-07-29 Nec Corporation Magnetic memory device and magnetic memory
JP2013195592A (ja) * 2012-03-17 2013-09-30 Nippon Hoso Kyokai <Nhk> 光変調素子および空間光変調器
JP2013195594A (ja) * 2012-03-17 2013-09-30 Nippon Hoso Kyokai <Nhk> 光変調素子および空間光変調器
JP2013195590A (ja) * 2012-03-17 2013-09-30 Nippon Hoso Kyokai <Nhk> 光変調素子および空間光変調器
JP2013195591A (ja) * 2012-03-17 2013-09-30 Nippon Hoso Kyokai <Nhk> 光変調素子および空間光変調器
JP2013195589A (ja) * 2012-03-17 2013-09-30 Nippon Hoso Kyokai <Nhk> 光変調素子および空間光変調器
JP2013195593A (ja) * 2012-03-17 2013-09-30 Nippon Hoso Kyokai <Nhk> 光変調素子および空間光変調器
WO2014065049A1 (ja) * 2012-10-25 2014-05-01 日本電気株式会社 磁壁移動型メモリセル及びその初期化処理方法
JPWO2014065049A1 (ja) * 2012-10-25 2016-09-08 日本電気株式会社 磁壁移動型メモリセル及びその初期化処理方法
US9478309B2 (en) 2012-10-25 2016-10-25 Nec Corporation Magnetic-domain-wall-displacement memory cell and initializing method therefor

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Publication number Publication date
JPWO2009019948A1 (ja) 2010-10-28
JP5278769B2 (ja) 2013-09-04

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