WO2009014067A1 - 電界効果型トランジスタ - Google Patents

電界効果型トランジスタ Download PDF

Info

Publication number
WO2009014067A1
WO2009014067A1 PCT/JP2008/062935 JP2008062935W WO2009014067A1 WO 2009014067 A1 WO2009014067 A1 WO 2009014067A1 JP 2008062935 W JP2008062935 W JP 2008062935W WO 2009014067 A1 WO2009014067 A1 WO 2009014067A1
Authority
WO
WIPO (PCT)
Prior art keywords
field effect
effect transistor
substrate
disclosed
electrode
Prior art date
Application number
PCT/JP2008/062935
Other languages
English (en)
French (fr)
Inventor
Hiroyuki Ohata
Yoshio Taniguchi
Musubu Ichikawa
Original Assignee
Japan Gore-Tex Inc.
Shinshu University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Gore-Tex Inc., Shinshu University filed Critical Japan Gore-Tex Inc.
Publication of WO2009014067A1 publication Critical patent/WO2009014067A1/ja

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K77/00Constructional details of devices covered by this subclass and not covered by groups H10K10/80, H10K30/80, H10K50/80 or H10K59/80
    • H10K77/10Substrates, e.g. flexible substrates
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]
    • H10K10/466Lateral bottom-gate IGFETs comprising only a single gate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
    • H10K10/80Constructional details
    • H10K10/88Passivation; Containers; Encapsulations
    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00Energy generation through renewable energy sources
    • Y02E10/50Photovoltaic [PV] energy
    • Y02E10/549Organic PV cells

Landscapes

  • Thin Film Transistor (AREA)

Abstract

 本発明は、フレキシブル性を有しながらも十分なガスバリア性を示す上に、高い寸法安定性を有する電界効果型トランジスタを提供することも目的とする。本発明の電界効果型トランジスタは、基板上に、少なくともソース電極、ドレイン電極、ゲート電極、ゲート絶縁層および有機半導体層を有し、当該基板が液晶ポリマーフィルムからなることを特徴とする。
PCT/JP2008/062935 2007-07-25 2008-07-17 電界効果型トランジスタ WO2009014067A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007193817A JP5334236B2 (ja) 2007-07-25 2007-07-25 電界効果型トランジスタ
JP2007-193817 2007-07-25

Publications (1)

Publication Number Publication Date
WO2009014067A1 true WO2009014067A1 (ja) 2009-01-29

Family

ID=40281323

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/062935 WO2009014067A1 (ja) 2007-07-25 2008-07-17 電界効果型トランジスタ

Country Status (2)

Country Link
JP (1) JP5334236B2 (ja)
WO (1) WO2009014067A1 (ja)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011157427A1 (en) 2010-06-17 2011-12-22 Borregaard Industries Limited, Norge Enzymatic hydrolysis of cellulose
GB2481367A (en) * 2010-06-04 2011-12-28 Plastic Logic Ltd Organic electronic devices

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005051199A (ja) * 2003-07-17 2005-02-24 Seiko Epson Corp 薄膜トランジスタ、薄膜トランジスタの製造方法、電子回路、表示装置および電子機器
JP2007158002A (ja) * 2005-12-05 2007-06-21 Canon Inc 有機電子デバイス、及び有機電子デバイスの作成方法

Family Cites Families (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3257429B2 (ja) * 1997-01-23 2002-02-18 凸版印刷株式会社 ガスバリアー性構造物及びそれを用いた包装材料
JP3896324B2 (ja) * 2002-11-28 2007-03-22 ジャパンゴアテックス株式会社 液晶ポリマーブレンドフィルム
JP4759917B2 (ja) * 2003-12-16 2011-08-31 ソニー株式会社 薄膜デバイスの製造方法、薄膜デバイスおよび液晶表示装置
JP4557755B2 (ja) * 2004-03-11 2010-10-06 キヤノン株式会社 基板、導電性基板および有機電界効果型トランジスタの各々の製造方法
JP2005322895A (ja) * 2004-04-09 2005-11-17 Mitsubishi Chemicals Corp 有機電子デバイスの製造方法及び有機電子デバイス
JP2006273792A (ja) * 2005-03-30 2006-10-12 Dainippon Printing Co Ltd 有機電荷輸送性化合物及びその製造方法、並びに有機電子デバイス
JP2006351646A (ja) * 2005-06-14 2006-12-28 Tokai Rubber Ind Ltd 回路基板およびその製造方法
JP2007042945A (ja) * 2005-08-04 2007-02-15 Japan Gore Tex Inc 回路基板における液晶ポリマーの劣化抑制方法および回路基板

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005051199A (ja) * 2003-07-17 2005-02-24 Seiko Epson Corp 薄膜トランジスタ、薄膜トランジスタの製造方法、電子回路、表示装置および電子機器
JP2007158002A (ja) * 2005-12-05 2007-06-21 Canon Inc 有機電子デバイス、及び有機電子デバイスの作成方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB2481367A (en) * 2010-06-04 2011-12-28 Plastic Logic Ltd Organic electronic devices
CN103168364A (zh) * 2010-06-04 2013-06-19 造型逻辑有限公司 有机电子器件
GB2481367B (en) * 2010-06-04 2015-01-14 Plastic Logic Ltd Moisture Barrier for Electronic Devices
US9466510B2 (en) 2010-06-04 2016-10-11 Flexenable Limited Organic electronic devices
WO2011157427A1 (en) 2010-06-17 2011-12-22 Borregaard Industries Limited, Norge Enzymatic hydrolysis of cellulose

Also Published As

Publication number Publication date
JP2009032818A (ja) 2009-02-12
JP5334236B2 (ja) 2013-11-06

Similar Documents

Publication Publication Date Title
ATE526686T1 (de) Dünnschicht-feldeffekttransistor und anzeige
TW200727492A (en) Organic thin film transistor array panel
TW200644224A (en) Semiconductor device and method for manufacturing the same
TW200802885A (en) Thin film transistor, method for fabricating the same and display device
TW200802884A (en) Thin film transistor, method for fabricating the same and display device
TW200725912A (en) Organic thin film transistor and method for manufacturing the same
TW200715562A (en) Thin film transistor substrate and fabrication thereof
WO2008123088A1 (ja) 薄膜トランジスタおよびその製造方法ならびに表示装置
GB2526463A (en) Leakage reduction structures for nanowire transistors
TW201614804A (en) Semiconductor device and method for manufacturing semiconductor device
TW200801745A (en) Electro-optical device and electronic apparatus
WO2007147102A3 (en) High voltage ldmos
WO2009019864A1 (ja) 半導体装置とその製造方法および画像表示装置
WO2012129511A3 (en) Semiconducting compounds and devices incorporating same
TW200734780A (en) Display device and manufacturing method therefor
TW200610206A (en) Organic thin film transistor and substrate including the same
WO2008099528A1 (ja) 表示装置、表示装置の製造方法
TW200717142A (en) Liquid crystal display device
SG191459A1 (en) Semiconductor device with transistor local interconnects
TW200743213A (en) Muti-channel thin film transistor
WO2009019920A1 (ja) 回路基板及び表示装置
TW200705668A (en) Thin film transistor substrate and manufacturing method thereof
TW200644221A (en) Method of forming an integrated power device and structure
WO2009014066A1 (ja) 有機エレクトロルミネッセンス素子およびディスプレイ装置
WO2008142873A1 (ja) 半導体装置及びその製造方法

Legal Events

Date Code Title Description
121 Ep: the epo has been informed by wipo that ep was designated in this application

Ref document number: 08791289

Country of ref document: EP

Kind code of ref document: A1

NENP Non-entry into the national phase

Ref country code: DE

122 Ep: pct application non-entry in european phase

Ref document number: 08791289

Country of ref document: EP

Kind code of ref document: A1