WO2009013984A1 - 化合物半導体気相成長装置用ＡｌＮ製部材およびそれを用いた化合物半導体の製造方法 - Google Patents

化合物半導体気相成長装置用ＡｌＮ製部材およびそれを用いた化合物半導体の製造方法 Download PDF

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WO2009013984A1
WO2009013984A1 PCT/JP2008/062095 JP2008062095W WO2009013984A1 WO 2009013984 A1 WO2009013984 A1 WO 2009013984A1 JP 2008062095 W JP2008062095 W JP 2008062095W WO 2009013984 A1 WO2009013984 A1 WO 2009013984A1
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Prior art keywords
compound semiconductor
aln
vapor deposition
same
deposition apparatus
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PCT/JP2008/062095
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English (en)
French (fr)
Inventor
Tomohisa Arai
Michiyasu Komatsu
Shigetaka Tamura
Katsuhiro Shinosawa
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Kabushiki Kaisha Toshiba
Toshiba Materials Co., Ltd.
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Application filed by Kabushiki Kaisha Toshiba, Toshiba Materials Co., Ltd. filed Critical Kabushiki Kaisha Toshiba
Priority to JP2009524434A priority Critical patent/JP5624317B2/ja
Publication of WO2009013984A1 publication Critical patent/WO2009013984A1/ja

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Abstract

　化合物半導体製造装置用部材として、高温環境下でのゆがみが少ない部材を提供する。ＡｌＮ部材がＡｌＮ焼結体を有し、ＡｌＮ焼結体中のＡｌＮの割合が９７～１００質量％の範囲内である化合物半導体製造装置用ＡｌＮ部材とする。
PCT/JP2008/062095 2007-07-24 2008-07-03 化合物半導体気相成長装置用ＡｌＮ製部材およびそれを用いた化合物半導体の製造方法 WO2009013984A1 (ja)

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Application Number Priority Date Filing Date Title
JP2009524434A JP5624317B2 (ja) 2007-07-24 2008-07-03 化合物半導体気相成長装置用ＡｌＮ製部材およびそれを用いた化合物半導体の製造方法

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JP2007191920 2007-07-24
JP2007-191920 2007-07-24

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WO2009013984A1 true WO2009013984A1 (ja) 2009-01-29

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PCT/JP2008/062095 WO2009013984A1 (ja) 2007-07-24 2008-07-03 化合物半導体気相成長装置用ＡｌＮ製部材およびそれを用いた化合物半導体の製造方法

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011037691A (ja) * 2009-08-18 2011-02-24 Toshiba Corp 高熱伝導性窒化アルミニウム焼結体、これを用いた基板、回路基板、および半導体装置、ならびに高熱伝導性窒化アルミニウム焼結体の製造方法
WO2015114977A1 (ja) * 2014-01-29 2015-08-06 東京エレクトロン株式会社 基板処理装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09315867A (ja) * 1996-03-29 1997-12-09 Ngk Insulators Ltd 窒化アルミニウム焼結体、金属埋設品、電子機能材料および静電チャック
JP2002255653A (ja) * 2001-02-28 2002-09-11 Kyocera Corp 窒化アルミニウム質焼結体
JP2005045170A (ja) * 2003-07-25 2005-02-17 Tokyo Electron Ltd ガス反応装置
JP2005072321A (ja) * 2003-08-26 2005-03-17 Kyocera Corp ウェハ支持部材とその製造方法
JP2006306653A (ja) * 2005-03-30 2006-11-09 Tokuyama Corp 窒化アルミニウム焼結体及びその製造方法

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11214359A (ja) * 1998-01-22 1999-08-06 Sumitomo Metal Ind Ltd マイクロ波導入窓用部材

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09315867A (ja) * 1996-03-29 1997-12-09 Ngk Insulators Ltd 窒化アルミニウム焼結体、金属埋設品、電子機能材料および静電チャック
JP2002255653A (ja) * 2001-02-28 2002-09-11 Kyocera Corp 窒化アルミニウム質焼結体
JP2005045170A (ja) * 2003-07-25 2005-02-17 Tokyo Electron Ltd ガス反応装置
JP2005072321A (ja) * 2003-08-26 2005-03-17 Kyocera Corp ウェハ支持部材とその製造方法
JP2006306653A (ja) * 2005-03-30 2006-11-09 Tokuyama Corp 窒化アルミニウム焼結体及びその製造方法

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011037691A (ja) * 2009-08-18 2011-02-24 Toshiba Corp 高熱伝導性窒化アルミニウム焼結体、これを用いた基板、回路基板、および半導体装置、ならびに高熱伝導性窒化アルミニウム焼結体の製造方法
WO2015114977A1 (ja) * 2014-01-29 2015-08-06 東京エレクトロン株式会社 基板処理装置

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TW200926268A (en) 2009-06-16
JPWO2009013984A1 (ja) 2010-09-30
TWI390609B (zh) 2013-03-21

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