WO2008156056A1 - Procédé pour assembler des matériaux à base de silicium, tête de distribution de gouttelette de liquide, appareil de distribution de gouttelette de liquide et dispositif électronique - Google Patents

Procédé pour assembler des matériaux à base de silicium, tête de distribution de gouttelette de liquide, appareil de distribution de gouttelette de liquide et dispositif électronique Download PDF

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Publication number
WO2008156056A1
WO2008156056A1 PCT/JP2008/060985 JP2008060985W WO2008156056A1 WO 2008156056 A1 WO2008156056 A1 WO 2008156056A1 JP 2008060985 W JP2008060985 W JP 2008060985W WO 2008156056 A1 WO2008156056 A1 WO 2008156056A1
Authority
WO
WIPO (PCT)
Prior art keywords
silicon base
liquid droplet
droplet delivery
base material
base materials
Prior art date
Application number
PCT/JP2008/060985
Other languages
English (en)
Japanese (ja)
Inventor
Mitsuru Sato
Yoshiaki Mori
Original Assignee
Seiko Epson Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from JP2008145157A external-priority patent/JP4858491B2/ja
Application filed by Seiko Epson Corporation filed Critical Seiko Epson Corporation
Priority to US12/665,028 priority Critical patent/US20100183885A1/en
Priority to CN200880020754A priority patent/CN101687276A/zh
Publication of WO2008156056A1 publication Critical patent/WO2008156056A1/fr

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C3/00—Assembling of devices or systems from individually processed components
    • B81C3/001—Bonding of two components
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/02—Positioning or observing the workpiece, e.g. with respect to the point of impact; Aligning, aiming or focusing the laser beam
    • B23K26/06—Shaping the laser beam, e.g. by masks or multi-focusing
    • B23K26/062—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam
    • B23K26/0622—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses
    • B23K26/0624—Shaping the laser beam, e.g. by masks or multi-focusing by direct control of the laser beam by shaping pulses using ultrashort pulses, i.e. pulses of 1ns or less
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/20—Bonding
    • B23K26/21—Bonding by welding
    • B23K26/24—Seam welding
    • B23K26/244—Overlap seam welding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/20—Bonding
    • B23K26/21—Bonding by welding
    • B23K26/24—Seam welding
    • B23K26/26—Seam welding of rectilinear seams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/185—Joining of semiconductor bodies for junction formation
    • H01L21/187—Joining of semiconductor bodies for junction formation by direct bonding
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K2101/00—Articles made by soldering, welding or cutting
    • B23K2101/36—Electric or electronic devices
    • B23K2101/42—Printed circuits
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C2203/00—Forming microstructural systems
    • B81C2203/03—Bonding two components
    • B81C2203/033—Thermal bonding
    • B81C2203/036—Fusion bonding

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Optics & Photonics (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Pressure Welding/Diffusion-Bonding (AREA)

Abstract

Cette invention concerne un procédé pour assembler des matériaux à base de silicium. Le procédé comprend une première étape consistant à appliquer de l'énergie à un premier matériau à base de silicium contenant une liaison Si-H pour couper sélectivement la liaison Si-H présente le long d'une face devant être clivée, et à cliver le premier matériau à base de silicium par une pression de détente de l'hydrogène gazeux produit pour permettre à un côté non lié de silicium d'être exposé sur la face clivée, et une seconde étape consistant à amener la face clivée du premier matériau à base de silicium clivé en contact avec la surface d'un second matériau à base de silicium avec un côté non lié de silicium exposé sur sa surface pour assembler le premier matériau à base de silicium au second matériau à base de silicium.
PCT/JP2008/060985 2007-06-18 2008-06-16 Procédé pour assembler des matériaux à base de silicium, tête de distribution de gouttelette de liquide, appareil de distribution de gouttelette de liquide et dispositif électronique WO2008156056A1 (fr)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/665,028 US20100183885A1 (en) 2007-06-18 2008-06-16 Bonding method of silicon base members, droplet ejection head, droplet ejection apparatus, and electronic device
CN200880020754A CN101687276A (zh) 2007-06-18 2008-06-16 硅基材的接合方法、液滴喷头、液滴喷出装置及电子器件

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007160796 2007-06-18
JP2007-160796 2007-06-18
JP2008-145157 2008-06-02
JP2008145157A JP4858491B2 (ja) 2007-06-18 2008-06-02 シリコン基材の接合方法、液滴吐出ヘッド、液滴吐出装置および電子デバイス

Publications (1)

Publication Number Publication Date
WO2008156056A1 true WO2008156056A1 (fr) 2008-12-24

Family

ID=40156215

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060985 WO2008156056A1 (fr) 2007-06-18 2008-06-16 Procédé pour assembler des matériaux à base de silicium, tête de distribution de gouttelette de liquide, appareil de distribution de gouttelette de liquide et dispositif électronique

Country Status (1)

Country Link
WO (1) WO2008156056A1 (fr)

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06302486A (ja) * 1993-02-16 1994-10-28 Nippondenso Co Ltd ２つの材料の直接接合方法及び材料直接接合装置
JP2004087606A (ja) * 2002-08-23 2004-03-18 Sharp Corp Ｓｏｉ基板およびそれを用いる表示装置ならびにｓｏｉ基板の製造方法
JP2004179649A (ja) * 2002-11-12 2004-06-24 Sony Corp 超薄型半導体装置の製造方法および製造装置
WO2006093817A2 (fr) * 2005-02-28 2006-09-08 Silicon Genesis Corporation Procede pour rigidite de substrat et dispositif resultant pour traitements a transfert de couche
JP2007511069A (ja) * 2003-10-28 2007-04-26 エス　オー　イ　テク　シリコン　オン　インシュレータ　テクノロジース 共注入後の薄膜層のカタストロフィ的転写方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH06302486A (ja) * 1993-02-16 1994-10-28 Nippondenso Co Ltd ２つの材料の直接接合方法及び材料直接接合装置
JP2004087606A (ja) * 2002-08-23 2004-03-18 Sharp Corp Ｓｏｉ基板およびそれを用いる表示装置ならびにｓｏｉ基板の製造方法
JP2004179649A (ja) * 2002-11-12 2004-06-24 Sony Corp 超薄型半導体装置の製造方法および製造装置
JP2007511069A (ja) * 2003-10-28 2007-04-26 エス　オー　イ　テク　シリコン　オン　インシュレータ　テクノロジース 共注入後の薄膜層のカタストロフィ的転写方法
WO2006093817A2 (fr) * 2005-02-28 2006-09-08 Silicon Genesis Corporation Procede pour rigidite de substrat et dispositif resultant pour traitements a transfert de couche

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