WO2008156023A1 - 光検出装置、及びそれを備えた表示装置 - Google Patents

光検出装置、及びそれを備えた表示装置 Download PDF

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Publication number
WO2008156023A1
WO2008156023A1 PCT/JP2008/060772 JP2008060772W WO2008156023A1 WO 2008156023 A1 WO2008156023 A1 WO 2008156023A1 JP 2008060772 W JP2008060772 W JP 2008060772W WO 2008156023 A1 WO2008156023 A1 WO 2008156023A1
Authority
WO
WIPO (PCT)
Prior art keywords
photodetector
light shielding
shielding film
display device
device provided
Prior art date
Application number
PCT/JP2008/060772
Other languages
English (en)
French (fr)
Inventor
Christopher Brown
Hiromi Katoh
Original Assignee
Sharp Kabushiki Kaisha
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sharp Kabushiki Kaisha filed Critical Sharp Kabushiki Kaisha
Priority to JP2009520451A priority Critical patent/JP5058255B2/ja
Priority to CN2008800139549A priority patent/CN101669217B/zh
Priority to EP20080765516 priority patent/EP2154731B1/en
Priority to US12/601,990 priority patent/US8227887B2/en
Publication of WO2008156023A1 publication Critical patent/WO2008156023A1/ja

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    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13318—Circuits comprising a photodetector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02164—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors for shielding light, e.g. light blocking layers, cold shields for infrared detectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02—Details
    • H01L31/0216—Coatings
    • H01L31/02161—Coatings for devices characterised by at least one potential jump barrier or surface barrier
    • H01L31/02162—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors
    • H01L31/02165—Coatings for devices characterised by at least one potential jump barrier or surface barrier for filtering or shielding light, e.g. multicolour filters for photodetectors using interference filters, e.g. multilayer dielectric filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
    • H01L31/035281—Shape of the body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
    • H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by at least one potential-jump barrier or surface barrier, e.g. phototransistors
    • H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
    • H01L31/102—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier
    • H01L31/105—Devices sensitive to infrared, visible or ultraviolet radiation characterised by only one potential barrier or surface barrier the potential barrier being of the PIN type
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/13306—Circuit arrangements or driving methods for the control of single liquid crystal cells
    • G02F1/13312—Circuits comprising photodetectors for purposes other than feedback
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133—Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/136—Liquid crystal cells structurally associated with a semi-conducting layer or substrate, e.g. cells forming part of an integrated circuit
    • G02F1/1362—Active matrix addressed cells
    • G—PHYSICS
    • G02—OPTICS
    • G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
    • G02F2201/58—Arrangements comprising a monitoring photodetector
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E10/00—Energy generation through renewable energy sources
    • Y02E10/50—Photovoltaic [PV] energy

Abstract

　フォトダイオード間の出力特性のばらつきを抑制し得る、光検出装置、及びそれを備えた表示装置を提供する。光透過性のベース基板（２）と、複数のアクティブ素子と、光検出装置とを備えたアクティブマトリクス基板（２０）を有する表示装置を用いる。光検出装置は、ベース基板２の一方の主面上に設けられた遮光膜（３）と、遮光膜（３）の上層に配置されたフォトダイオード（１）と、遮光膜（３）の上層のフォトダイオード（１）の周辺に配置された電極（１２）とを備える。フォトダイオード（１）は、シリコン膜（１１）を備え、シリコン膜（１１）は遮光膜（３）に対して電気的に絶縁されている。電極（１２）は、遮光膜（３）及びシリコン膜（１１）に対して電気的に絶縁されている。遮光膜（３）は、ベース基板（２）の厚み方向において、その一部がシリコン膜（１１）全部と重なり、一部以外の部分が電極（１２）に重なるように、形成されている。
PCT/JP2008/060772 2007-06-21 2008-06-12 光検出装置、及びそれを備えた表示装置 WO2008156023A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2009520451A JP5058255B2 (ja) 2007-06-21 2008-06-12 光検出装置、及びそれを備えた表示装置
CN2008800139549A CN101669217B (zh) 2007-06-21 2008-06-12 光检测装置和具备它的显示装置
EP20080765516 EP2154731B1 (en) 2007-06-21 2008-06-12 Photodetector and display device provided with same
US12/601,990 US8227887B2 (en) 2007-06-21 2008-06-12 Photodetector and display device provided with the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-164283 2007-06-21
JP2007164283 2007-06-21

Publications (1)

Publication Number Publication Date
WO2008156023A1 true WO2008156023A1 (ja) 2008-12-24

Family

ID=40156180

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060772 WO2008156023A1 (ja) 2007-06-21 2008-06-12 光検出装置、及びそれを備えた表示装置

Country Status (5)

Country Link
US (1) US8227887B2 (ja)
EP (1) EP2154731B1 (ja)
JP (1) JP5058255B2 (ja)
CN (1) CN101669217B (ja)
WO (1) WO2008156023A1 (ja)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2011065558A1 (ja) * 2009-11-30 2011-06-03 シャープ株式会社 表示装置
US20120001880A1 (en) * 2009-02-10 2012-01-05 Christopher Brown Display device
EP2490210A1 (en) * 2009-11-30 2012-08-22 Sharp Kabushiki Kaisha Display device
US20120262424A1 (en) * 2009-09-30 2012-10-18 Sharp Kabushiki Kaisha Display Device
US9064460B2 (en) 2010-05-20 2015-06-23 Sharp Kabushiki Kaisha Display device with touch sensor including photosensor
JP2015149497A (ja) * 2010-01-15 2015-08-20 株式会社半導体エネルギー研究所 半導体装置
WO2015189732A1 (ja) * 2014-06-09 2015-12-17 株式会社半導体エネルギー研究所 撮像装置
US9335854B2 (en) 2009-09-30 2016-05-10 Sharp Kabushiki Kaisha Display device

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WO2015143011A1 (en) * 2014-03-19 2015-09-24 Bidirectional Display Inc. Image sensor panel and method for capturing graphical information using same
US9122349B1 (en) * 2014-03-19 2015-09-01 Bidirectional Display Inc. Image sensor panel and method for capturing graphical information using same
KR102389626B1 (ko) * 2014-12-11 2022-04-25 삼성디스플레이 주식회사 표시 패널 및 표시 패널을 포함하는 유기 발광 표시 장치
CN108376678B (zh) * 2018-01-31 2019-11-05 昆山国显光电有限公司 Oled面板以及检测阴极层偏位的方法
CN111430414A (zh) * 2020-03-31 2020-07-17 京东方科技集团股份有限公司 Oled显示面板及制备方法、显示装置

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US20120001880A1 (en) * 2009-02-10 2012-01-05 Christopher Brown Display device
US20120262424A1 (en) * 2009-09-30 2012-10-18 Sharp Kabushiki Kaisha Display Device
US9335854B2 (en) 2009-09-30 2016-05-10 Sharp Kabushiki Kaisha Display device
CN102667905A (zh) * 2009-11-30 2012-09-12 夏普株式会社 显示装置
CN102630313A (zh) * 2009-11-30 2012-08-08 夏普株式会社 显示装置
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Also Published As

Publication number Publication date
CN101669217B (zh) 2012-04-25
US8227887B2 (en) 2012-07-24
EP2154731A1 (en) 2010-02-17
US20100193804A1 (en) 2010-08-05
EP2154731A4 (en) 2014-06-18
EP2154731B1 (en) 2015-05-13
JP5058255B2 (ja) 2012-10-24
JPWO2008156023A1 (ja) 2010-08-26
CN101669217A (zh) 2010-03-10

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