WO2008155296A2 - Bauelement mit spannungsreduzierter befestigung - Google Patents
Bauelement mit spannungsreduzierter befestigung Download PDFInfo
- Publication number
- WO2008155296A2 WO2008155296A2 PCT/EP2008/057498 EP2008057498W WO2008155296A2 WO 2008155296 A2 WO2008155296 A2 WO 2008155296A2 EP 2008057498 W EP2008057498 W EP 2008057498W WO 2008155296 A2 WO2008155296 A2 WO 2008155296A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- component
- membrane
- component according
- substrate
- suspension
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Ceased
Links
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/173—Air-gaps
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/02007—Details of bulk acoustic wave devices
- H03H9/02086—Means for compensation or elimination of undesirable effects
- H03H9/02133—Means for compensation or elimination of undesirable effects of stress
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/02—Details
- H03H9/05—Holders or supports
- H03H9/09—Elastic or damping supports
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic elements; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/171—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator implemented with thin-film techniques, i.e. of the film bulk acoustic resonator [FBAR] type
- H03H9/172—Means for mounting on a substrate, i.e. means constituting the material interface confining the waves to a volume
- H03H9/174—Membranes
Definitions
- An object to be solved is to specify a component mounting which makes it possible to fasten a component, for example a piezoelement, to a substrate without mechanical stresses.
- the device is applied via a resilient suspension on top of a substrate, so that the device can move relative to the substrate.
- the suspension preferably comprises an elastic element.
- the modulus of elasticity of the elastic element is less than the modulus of elasticity of the device or of the substrate.
- the suspension is suitable for voltage-sensitive components, in particular MEMS components. Furthermore, the suspension is suitable for component with micromechanical structures that are sensitive to mechanical stresses in the suspension.
- the component is preferably a bridge-type BAW resonator.
- the elastic element is formed as a membrane, which is stretched over the substrate and with which the component is suspended above the substrate.
- a soft frame can be attached around the device, which can absorb stresses.
- the substrate and the device are mechanically decoupled from each other.
- the frame preferably has a significantly lower modulus of elasticity (Young's modulus) E and thus a lower rigidity than the materials used in the component.
- This lower rigidity can be achieved by a soft polymer or by a very thin and possibly structured metal layer.
- a spring element is used to suspend the component above the substrate. This is preferably arranged between substrate and component. In a preferred variant, this is a leaf spring.
- connections between the device and the substrate via a frame have a thickness which is sufficient to fix the device over the substrate.
- the device can rest on the substrate, or be separated by an air gap.
- the connection is soft enough to compensate for mechanical stress.
- Mechanical stresses can arise, for example, during the manufacturing process or during later operation due to temperature changes.
- the substrate preferably has a depression underneath the component which is spanned by the membrane.
- the recess extends through the entire substrate.
- the substrate then has an opening which is spanned by the membrane.
- the edge of the device is preferably located above the edge of the substrate.
- the edges may also be completely over the depression.
- the suspension of the component takes place at the side edges.
- the component rests with a lower edge region on the membrane.
- the suspension of the component can take place via edge regions of the component on the underside of the membrane.
- the membrane may also cover larger areas of the device or the entire surface of the device.
- the device has metal electrodes on first and second sides that may be retracted in regions of the suspension to decouple the acoustically active region from the suspension.
- the soft membrane can absorb the production-related or by different temperature coefficients of expansion resulting tension.
- a static pressure can build up due to temperature.
- a pressure equalization opening is provided in the membrane, through which the pressure can escape to the outside.
- FIG. 1 shows a first embodiment in which the substrate has a depression below the resonator.
- Figure 2 shows a second embodiment in which there is an opening in the substrate under the resonator.
- FIGS. 3a-3c show different variants of the suspension of the resonator with the aid of a membrane.
- Figures 4a-4d show various variants of the suspension of the resonator with partially recessed portions of the metal electrodes.
- FIG. 5 shows a further embodiment in which the suspension of the resonator on the substrate takes place via a spring.
- FIG. 1 shows a first exemplary embodiment in which the component 1 is suspended via a membrane 4. Under the membrane 4 is located in the substrate 3, a recess 6, which decouples the device 1 from the substrate. The component 1 rests on the membrane 4. Preferably, a pressure equalization opening 12 is located in the membrane 4. This pressure equalization opening 12 is used to compensate for the static pressure that can form in the recess 6 during operation due to temperature changes.
- the component designed here as a resonant bulk acoustic wave device comprises a piezoelectric layer having metal electrodes 10 on two sides.
- the membrane has a lower rigidity than the component and is in particular formed from a polymer.
- the elastic membrane ensures that no lateral tensioning of the resonator with the substrate can occur.
- the resilient and compliant membrane may receive forces that are at different thermal expansions or stresses that have occurred in the manufacturing process, such that the resonator or the MEMS device is suspended in a stress-free state.
- FIG. 2 shows a further exemplary embodiment, in which a substrate is located underneath the component 1 in the substrate 3 Opening 7 is located. This opening 7 is covered by a membrane 4. In the membrane 4 there is a pressure equalization opening 12, but can also be dispensed with because of the "bottom" opening 7 of the substrate 3.
- the membrane 4 is stretched over the component, so that the component 1 on the side facing away from the membrane 4 but the substrate 3 side facing a free area 11, which preferably comprises the entire underside of the component 1.
- the membrane 4 is preferably against the side edges 8 of the device 1.
- FIG. 3 b shows a further exemplary embodiment in which the component 1 rests on the membrane 4 above the recess 6 of the substrate 3 only with an edge region 9.
- the component 1 on the underside can have a region 11 which is free from the membrane 4 and corresponds to a recess in the membrane 4.
- FIG. 3c Another embodiment is shown in FIG. 3c.
- the component 1 is held by the membrane 4 at the side edges 8 of the device 1.
- the component 1 can have a region 11 which is free of the membrane 4, both on the underside and on the upper side.
- Variants 4a to 4d show exemplary embodiments in which the metal electrodes 10 are retracted on the component 1 in edge regions 9, so that the acoustically active regions are decoupled from the membrane.
- the device 1 is only with an edge region 9 on the Membrane 4 and covers a provided in the membrane 4 recess so that on the underside of the device 1, a free area 11 may occur.
- the metal electrodes 10 are here withdrawn on both sides, so that the device 1 of metal electrodes 10 may have free areas on the top and bottom.
- the attachment of the component 1 takes place via the side edges 8 of the component 1.
- the membrane 4 can cover a narrow edge region 9 of the component 1 on the upper side of the component 1.
- the areas with metal electrodes 10 are pulled back on both sides of the component edge and are not in contact with the membrane 4th
- the metal electrodes 10 are retracted only on the upper side of the component 1.
- the underside of the component 1 is covered flat with a metal electrode 10.
- the membrane 4 can cover a narrow edge region of the upper side of the component 1, but is preferably not in contact with the metal electrodes 10 on the upper side so that the membrane 4 does not damp the vibration of the component 1 formed as a resonator caused.
- FIG. 4 d shows a variant embodiment in which the metal electrodes 10 are retracted only on the underside of the component 1 and are thereby decoupled from the attachment.
- the membrane 4 can cover a narrow edge area 9 on the upper side of the component 1, and thus also a narrow edge area of the upper metal electrodes 10, since this edge area does not become active due to the metal electrodes 10 being pulled back Area of the resonator hears no damping of resonator vibrations occurs here.
- FIG. 5 shows a variant of the attachment of the component 1 to the substrate 3, in which the suspension takes place via a spring element 2.
- the component 1 is fastened by means of the spring element 2 via a recess 6.
- the invention is not limited to these. It is possible in principle that the membrane also covers other areas of the component, or that the attachment of the component takes place not only on the side edges or edge regions. It is also conceivable that there are a plurality of recesses under the component or that a plurality of components are arranged on a substrate and are fastened over a common or a plurality of separate recesses by means of a membrane or another suspension.
- the device is not limited to the number of elements shown schematically.
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
- Structures For Mounting Electric Components On Printed Circuit Boards (AREA)
Abstract
Description
Claims
Priority Applications (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US12/665,385 US8624466B2 (en) | 2007-06-20 | 2008-06-13 | Component having stress-reduced mounting |
| JP2010512655A JP2010535436A (ja) | 2007-06-20 | 2008-06-13 | 応力が低減された取付構造を有する構成素子 |
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| DE102007028292.5A DE102007028292B4 (de) | 2007-06-20 | 2007-06-20 | Bauelement mit spannungsreduzierter Befestigung |
| DE102007028292.5 | 2007-06-20 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| WO2008155296A2 true WO2008155296A2 (de) | 2008-12-24 |
| WO2008155296A3 WO2008155296A3 (de) | 2009-03-26 |
Family
ID=39719229
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| PCT/EP2008/057498 Ceased WO2008155296A2 (de) | 2007-06-20 | 2008-06-13 | Bauelement mit spannungsreduzierter befestigung |
Country Status (4)
| Country | Link |
|---|---|
| US (1) | US8624466B2 (de) |
| JP (1) | JP2010535436A (de) |
| DE (1) | DE102007028292B4 (de) |
| WO (1) | WO2008155296A2 (de) |
Families Citing this family (28)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8981876B2 (en) | 2004-11-15 | 2015-03-17 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Piezoelectric resonator structures and electrical filters having frame elements |
| US7791434B2 (en) * | 2004-12-22 | 2010-09-07 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator performance enhancement using selective metal etch and having a trench in the piezoelectric |
| US8542850B2 (en) * | 2007-09-12 | 2013-09-24 | Epcos Pte Ltd | Miniature microphone assembly with hydrophobic surface coating |
| DE102007058951B4 (de) * | 2007-12-07 | 2020-03-26 | Snaptrack, Inc. | MEMS Package |
| US8248185B2 (en) | 2009-06-24 | 2012-08-21 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Acoustic resonator structure comprising a bridge |
| US8902023B2 (en) | 2009-06-24 | 2014-12-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator structure having an electrode with a cantilevered portion |
| US8796904B2 (en) | 2011-10-31 | 2014-08-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising piezoelectric layer and inverse piezoelectric layer |
| US9243316B2 (en) | 2010-01-22 | 2016-01-26 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Method of fabricating piezoelectric material with selected c-axis orientation |
| DE102010006132B4 (de) | 2010-01-29 | 2013-05-08 | Epcos Ag | Miniaturisiertes elektrisches Bauelement mit einem Stapel aus einem MEMS und einem ASIC |
| WO2011099381A1 (ja) * | 2010-02-09 | 2011-08-18 | 株式会社村田製作所 | 圧電デバイス、圧電デバイスの製造方法 |
| US8962443B2 (en) | 2011-01-31 | 2015-02-24 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Semiconductor device having an airbridge and method of fabricating the same |
| US9048812B2 (en) | 2011-02-28 | 2015-06-02 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Bulk acoustic wave resonator comprising bridge formed within piezoelectric layer |
| US9148117B2 (en) | 2011-02-28 | 2015-09-29 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Coupled resonator filter comprising a bridge and frame elements |
| US9154112B2 (en) | 2011-02-28 | 2015-10-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Coupled resonator filter comprising a bridge |
| US9425764B2 (en) | 2012-10-25 | 2016-08-23 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having composite electrodes with integrated lateral features |
| US9083302B2 (en) | 2011-02-28 | 2015-07-14 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked bulk acoustic resonator comprising a bridge and an acoustic reflector along a perimeter of the resonator |
| US9136818B2 (en) | 2011-02-28 | 2015-09-15 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked acoustic resonator comprising a bridge |
| US9203374B2 (en) | 2011-02-28 | 2015-12-01 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic resonator comprising a bridge |
| US8575820B2 (en) | 2011-03-29 | 2013-11-05 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Stacked bulk acoustic resonator |
| US9444426B2 (en) | 2012-10-25 | 2016-09-13 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Accoustic resonator having integrated lateral feature and temperature compensation feature |
| US8450913B1 (en) * | 2011-03-31 | 2013-05-28 | Georgia Tech Research Corporation | Tunable Piezoelectric MEMS Resonators suitable for real-time clock applications |
| US8872604B2 (en) | 2011-05-05 | 2014-10-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Double film bulk acoustic resonators with electrode layer and piezo-electric layer thicknesses providing improved quality factor |
| US8350445B1 (en) | 2011-06-16 | 2013-01-08 | Avago Technologies Wireless Ip (Singapore) Pte. Ltd. | Bulk acoustic resonator comprising non-piezoelectric layer and bridge |
| US8922302B2 (en) | 2011-08-24 | 2014-12-30 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Acoustic resonator formed on a pedestal |
| US9667218B2 (en) | 2012-01-30 | 2017-05-30 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Temperature controlled acoustic resonator comprising feedback circuit |
| US9608592B2 (en) | 2014-01-21 | 2017-03-28 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Film bulk acoustic wave resonator (FBAR) having stress-relief |
| US9154103B2 (en) | 2012-01-30 | 2015-10-06 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Temperature controlled acoustic resonator |
| US9667220B2 (en) | 2012-01-30 | 2017-05-30 | Avago Technologies General Ip (Singapore) Pte. Ltd. | Temperature controlled acoustic resonator comprising heater and sense resistors |
Family Cites Families (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5714917A (en) | 1996-10-02 | 1998-02-03 | Nokia Mobile Phones Limited | Device incorporating a tunable thin film bulk acoustic resonator for performing amplitude and phase modulation |
| US6366186B1 (en) * | 2000-01-20 | 2002-04-02 | Jds Uniphase Inc. | Mems magnetically actuated switches and associated switching arrays |
| DE10016869A1 (de) | 2000-04-05 | 2001-10-18 | Deutsch Zentr Luft & Raumfahrt | Mikrofunktionseinheit |
| DE10043549C1 (de) | 2000-09-01 | 2002-06-20 | Little Things Factory Gmbh | Mikroschalter und Verfahren zu dessen Herstellung |
| KR100518616B1 (ko) * | 2001-01-18 | 2005-10-04 | 노키아 코포레이션 | 필터디바이스 및 필터디바이스를 제조하는 방법 |
| KR100555762B1 (ko) * | 2003-10-07 | 2006-03-03 | 삼성전자주식회사 | 에어갭형 박막 벌크 음향 공진기 및 그 제조방법, 이를이용한 필터 및 듀플렉서 |
-
2007
- 2007-06-20 DE DE102007028292.5A patent/DE102007028292B4/de not_active Expired - Fee Related
-
2008
- 2008-06-13 JP JP2010512655A patent/JP2010535436A/ja not_active Withdrawn
- 2008-06-13 WO PCT/EP2008/057498 patent/WO2008155296A2/de not_active Ceased
- 2008-06-13 US US12/665,385 patent/US8624466B2/en not_active Expired - Fee Related
Also Published As
| Publication number | Publication date |
|---|---|
| US8624466B2 (en) | 2014-01-07 |
| US20100176899A1 (en) | 2010-07-15 |
| DE102007028292A1 (de) | 2008-12-24 |
| JP2010535436A (ja) | 2010-11-18 |
| WO2008155296A3 (de) | 2009-03-26 |
| DE102007028292B4 (de) | 2019-06-19 |
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