WO2008153154A1 - 環状化合物、フォトレジスト基材及びフォトレジスト組成物 - Google Patents

環状化合物、フォトレジスト基材及びフォトレジスト組成物 Download PDF

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Publication number
WO2008153154A1
WO2008153154A1 PCT/JP2008/060905 JP2008060905W WO2008153154A1 WO 2008153154 A1 WO2008153154 A1 WO 2008153154A1 JP 2008060905 W JP2008060905 W JP 2008060905W WO 2008153154 A1 WO2008153154 A1 WO 2008153154A1
Authority
WO
WIPO (PCT)
Prior art keywords
photoresist
cyclic compound
base material
composition
photoresist composition
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/060905
Other languages
English (en)
French (fr)
Inventor
Mitsuru Shibata
Takanori Owada
Akinori Yomogita
Takashi Kashiwamura
Masashi Sekikawa
Norio Tomotsu
Hirotoshi Ishii
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Idemitsu Kosan Co Ltd
Original Assignee
Idemitsu Kosan Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Idemitsu Kosan Co Ltd filed Critical Idemitsu Kosan Co Ltd
Priority to US12/664,784 priority Critical patent/US20100190107A1/en
Priority to JP2009519325A priority patent/JPWO2008153154A1/ja
Publication of WO2008153154A1 publication Critical patent/WO2008153154A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/76—Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/76—Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring
    • C07C69/84—Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring
    • C07C69/92—Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring of monocyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of a six-membered aromatic ring with etherified hydroxyl groups
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C69/00—Esters of carboxylic acids; Esters of carbonic or haloformic acids
    • C07C69/76—Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring
    • C07C69/94—Esters of carboxylic acids having a carboxyl group bound to a carbon atom of a six-membered aromatic ring of polycyclic hydroxy carboxylic acids, the hydroxy groups and the carboxyl groups of which are bound to carbon atoms of six-membered aromatic rings
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/0045—Photosensitive materials with organic non-macromolecular light-sensitive compounds not otherwise provided for, e.g. dissolution inhibitors
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/039—Macromolecular compounds which are photodegradable, e.g. positive electron resists
    • G03F7/0392—Macromolecular compounds which are photodegradable, e.g. positive electron resists the macromolecular compound being present in a chemically amplified positive photoresist composition
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/56—Ring systems containing bridged rings
    • C07C2603/58—Ring systems containing bridged rings containing three rings
    • C07C2603/70—Ring systems containing bridged rings containing three rings containing only six-membered rings
    • C07C2603/74—Adamantanes
    • C—CHEMISTRY; METALLURGY
    • C07—ORGANIC CHEMISTRY
    • C07C—ACYCLIC OR CARBOCYCLIC COMPOUNDS
    • C07C2603/00—Systems containing at least three condensed rings
    • C07C2603/92—Systems containing at least three condensed rings with a condensed ring system consisting of at least two mutually uncondensed aromatic ring systems, linked by an annular structure formed by carbon chains on non-adjacent positions of the aromatic system, e.g. cyclophanes

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • General Physics & Mathematics (AREA)
  • Materials For Photolithography (AREA)
  • Organic Low-Molecular-Weight Compounds And Preparation Thereof (AREA)
  • Plural Heterocyclic Compounds (AREA)
  • Heterocyclic Carbon Compounds Containing A Hetero Ring Having Oxygen Or Sulfur (AREA)

Abstract

　下記式（Ｉ）で表される環状化合物。
PCT/JP2008/060905 2007-06-15 2008-06-13 環状化合物、フォトレジスト基材及びフォトレジスト組成物 Ceased WO2008153154A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/664,784 US20100190107A1 (en) 2007-06-15 2008-06-13 Cyclic compound, photoresist base material and photoresist composition
JP2009519325A JPWO2008153154A1 (ja) 2007-06-15 2008-06-13 環状化合物、フォトレジスト基材及びフォトレジスト組成物

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2007-158898 2007-06-15
JP2007158898 2007-06-15
JP2007289614 2007-11-07
JP2007-289614 2007-11-07

Publications (1)

Publication Number Publication Date
WO2008153154A1 true WO2008153154A1 (ja) 2008-12-18

Family

ID=40129757

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060905 Ceased WO2008153154A1 (ja) 2007-06-15 2008-06-13 環状化合物、フォトレジスト基材及びフォトレジスト組成物

Country Status (5)

Country Link
US (1) US20100190107A1 (ja)
JP (1) JPWO2008153154A1 (ja)
KR (1) KR20100017795A (ja)
TW (1) TW200918502A (ja)
WO (1) WO2008153154A1 (ja)

Cited By (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009269901A (ja) * 2007-12-11 2009-11-19 Idemitsu Kosan Co Ltd 環状化合物、フォトレジスト基材、フォトレジスト組成物、微細加工方法及び半導体装置
JP2010163382A (ja) * 2009-01-14 2010-07-29 Idemitsu Kosan Co Ltd 環状化合物の製造方法
WO2010143436A1 (ja) * 2009-06-11 2010-12-16 出光興産株式会社 環状化合物、フォトレジスト基材及びフォトレジスト組成物
WO2011148603A1 (ja) * 2010-05-26 2011-12-01 三菱瓦斯化学株式会社 環状化合物の精製方法
JP2013007785A (ja) * 2011-06-22 2013-01-10 Fujifilm Corp 化学増幅型レジスト組成物、並びに、それを用いたレジスト膜、レジスト塗布マスクブランクス、レジストパターン形成方法、及び、フォトマスク
EP2474565A4 (en) * 2009-08-31 2013-12-25 Mitsubishi Gas Chemical Co CYCLIC COMPOUND, METHOD OF MANUFACTURING THEREOF, RADIATION SENSITIVE COMPOSITION AND METHOD FOR FORMING A RESISTANCE STRUCTURE
CN110705188A (zh) * 2019-10-06 2020-01-17 中水东北勘测设计研究有限责任公司 一维冰水耦合运动的高精度格式模拟方法

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5820171B2 (ja) * 2011-07-14 2015-11-24 Jsr株式会社 包接化合物およびその製造方法
US9767522B2 (en) 2012-12-06 2017-09-19 GE Lighting Solutions, LLC System and method for monitoring use of a lamp
US11592747B2 (en) * 2012-12-14 2023-02-28 Nissan Chemical Industries, Ltd. Resist underlayer film-forming composition comprising carbonyl-containing polyhydroxy aromatic ring novolac resin
KR20170099908A (ko) 2014-12-25 2017-09-01 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 화합물, 수지, 리소그래피용 하층막 형성 재료, 리소그래피용 하층막, 패턴 형성방법 및 정제방법
JP6845991B2 (ja) 2015-03-31 2021-03-24 三菱瓦斯化学株式会社 化合物、レジスト組成物及びそれを用いるレジストパターン形成方法
JP6766803B2 (ja) 2015-03-31 2020-10-14 三菱瓦斯化学株式会社 レジスト組成物、レジストパターン形成方法、及びそれに用いるポリフェノール化合物
WO2017038643A1 (ja) 2015-08-31 2017-03-09 三菱瓦斯化学株式会社 リソグラフィー用下層膜形成材料、リソグラフィー用下層膜形成用組成物、リソグラフィー用下層膜及びその製造方法、並びにレジストパターン形成方法
EP3346335A4 (en) 2015-08-31 2019-06-26 Mitsubishi Gas Chemical Company, Inc. MATERIAL FOR FORMING LITHOGRAPHY OF LAYER LAYERS, COMPOSITION FOR FORMING LITHOGRAPHY LAYER LAYERS, LITHOGRAPHY LAYERINGS AND METHOD FOR THE PRODUCTION THEREOF, PATTERN FORMULATION, RESIN AND CLEANING METHOD
KR102687507B1 (ko) 2015-09-10 2024-07-24 미쯔비시 가스 케미칼 컴파니, 인코포레이티드 화합물, 수지, 레지스트 조성물 또는 감방사선성 조성물, 레지스트 패턴 형성방법, 아몰퍼스막의 제조방법, 리소그래피용 하층막 형성재료, 리소그래피용 하층막 형성용 조성물, 회로패턴의 형성방법 및 정제방법

Citations (5)

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WO2002044121A1 (en) * 2000-12-01 2002-06-06 Aids Care Pharma Limited Anti-viral compounds
JP2003321423A (ja) * 2002-05-09 2003-11-11 Jsr Corp カリックスレゾルシンアレーン誘導体および感放射線性樹脂組成物
JP2005170902A (ja) * 2003-12-15 2005-06-30 Jsr Corp 新規化合物および感放射線性樹脂組成物
WO2006136950A1 (en) * 2005-06-17 2006-12-28 British American Tobacco Italia S.P.A. Method
WO2008053974A1 (en) * 2006-11-02 2008-05-08 Mitsubishi Gas Chemical Company, Inc. Radiation-sensitive composition

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US6093517A (en) * 1998-07-31 2000-07-25 International Business Machines Corporation Calixarenes for use as dissolution inhibitors in lithographic photoresist compositions
US20020051932A1 (en) * 2000-05-31 2002-05-02 Shipley Company, L.L.C. Photoresists for imaging with high energy radiation
JP4429620B2 (ja) * 2002-10-15 2010-03-10 出光興産株式会社 感放射線性有機化合物
JP4346358B2 (ja) * 2003-06-20 2009-10-21 Ｎｅｃエレクトロニクス株式会社 化学増幅型レジスト組成物およびそれを用いた半導体装置の製造方法、パターン形成方法
US20090042123A1 (en) * 2005-06-01 2009-02-12 Hiroo Kinoshita Calixresorcinarene compound, photoresist base comprising the same, and composition thereof

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WO2002044121A1 (en) * 2000-12-01 2002-06-06 Aids Care Pharma Limited Anti-viral compounds
JP2003321423A (ja) * 2002-05-09 2003-11-11 Jsr Corp カリックスレゾルシンアレーン誘導体および感放射線性樹脂組成物
JP2005170902A (ja) * 2003-12-15 2005-06-30 Jsr Corp 新規化合物および感放射線性樹脂組成物
WO2006136950A1 (en) * 2005-06-17 2006-12-28 British American Tobacco Italia S.P.A. Method
WO2008053974A1 (en) * 2006-11-02 2008-05-08 Mitsubishi Gas Chemical Company, Inc. Radiation-sensitive composition

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HELVETICA CHIMICA ACTA, vol. 86, 2003, pages 3648 - 3670 *
HIROTO KUDO ET AL.: "The Synthesis and Photo-Induced Deprotection Reaction of Calix[4]resorcinarene Derivatives Containing t-Butyl Ester Moieties", BULLETIN OF THE CHEMICAL SOCIETY OF JAPAN, vol. 77, no. 4, 2004, pages 819 - 826, XP003023934 *
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ORGANIC & BIOMOLECULAR CHEMISTRY, vol. 1, no. 17, 2003, pages 3131 - 3137 *

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009269901A (ja) * 2007-12-11 2009-11-19 Idemitsu Kosan Co Ltd 環状化合物、フォトレジスト基材、フォトレジスト組成物、微細加工方法及び半導体装置
JP2010163382A (ja) * 2009-01-14 2010-07-29 Idemitsu Kosan Co Ltd 環状化合物の製造方法
WO2010143436A1 (ja) * 2009-06-11 2010-12-16 出光興産株式会社 環状化合物、フォトレジスト基材及びフォトレジスト組成物
EP2474565A4 (en) * 2009-08-31 2013-12-25 Mitsubishi Gas Chemical Co CYCLIC COMPOUND, METHOD OF MANUFACTURING THEREOF, RADIATION SENSITIVE COMPOSITION AND METHOD FOR FORMING A RESISTANCE STRUCTURE
US8883937B2 (en) 2009-08-31 2014-11-11 Mitsubishi Gas Chemical Company, Inc. Cyclic compound, manufacturing method therefor, radiation-sensitive composition, and method for forming a resist pattern
WO2011148603A1 (ja) * 2010-05-26 2011-12-01 三菱瓦斯化学株式会社 環状化合物の精製方法
JP5725021B2 (ja) * 2010-05-26 2015-05-27 三菱瓦斯化学株式会社 環状化合物の精製方法
EP2578562A4 (en) * 2010-05-26 2015-12-02 Mitsubishi Gas Chemical Co PROCESS FOR PURIFYING CYCLIC COMPOUNDS
JP2013007785A (ja) * 2011-06-22 2013-01-10 Fujifilm Corp 化学増幅型レジスト組成物、並びに、それを用いたレジスト膜、レジスト塗布マスクブランクス、レジストパターン形成方法、及び、フォトマスク
CN110705188A (zh) * 2019-10-06 2020-01-17 中水东北勘测设计研究有限责任公司 一维冰水耦合运动的高精度格式模拟方法

Also Published As

Publication number Publication date
KR20100017795A (ko) 2010-02-16
US20100190107A1 (en) 2010-07-29
JPWO2008153154A1 (ja) 2010-08-26
TW200918502A (en) 2009-05-01

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