WO2008153052A1 - プラズマ処理装置およびプラズマ処理装置の使用方法 - Google Patents
プラズマ処理装置およびプラズマ処理装置の使用方法 Download PDFInfo
- Publication number
- WO2008153052A1 WO2008153052A1 PCT/JP2008/060671 JP2008060671W WO2008153052A1 WO 2008153052 A1 WO2008153052 A1 WO 2008153052A1 JP 2008060671 W JP2008060671 W JP 2008060671W WO 2008153052 A1 WO2008153052 A1 WO 2008153052A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- processing apparatus
- microwave
- plasma processing
- internal conductor
- processing container
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05H—PLASMA TECHNIQUE; PRODUCTION OF ACCELERATED ELECTRICALLY-CHARGED PARTICLES OR OF NEUTRONS; PRODUCTION OR ACCELERATION OF NEUTRAL MOLECULAR OR ATOMIC BEAMS
- H05H1/00—Generating plasma; Handling plasma
- H05H1/24—Generating plasma
- H05H1/46—Generating plasma using applied electromagnetic fields, e.g. high frequency or microwave energy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/3222—Antennas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32229—Waveguides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32192—Microwave generated discharge
- H01J37/32211—Means for coupling power to the plasma
- H01J37/32238—Windows
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Electromagnetism (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
Abstract
【課題】低周波数の電磁波を用いることができるプラズマ処理装置を提供する。 【解決手段】プラズマ処理装置10は、処理容器100と、マイクロ波を出力するマイクロ波源900と、マイクロ波源900から出力されたマイクロ波を伝送させる内部導体315aと内部導体315aに隣接または近接し、内部導体315aを伝送したマイクロ波を透過させて処理容器100の内部に放出する誘電体板305と、処理容器100の内面に設けられた伝搬障害部(たとえば、溝300a)を有する。低周波数のマイクロ波をプラズマ処理装置10に供給することにより、プロセスウィンドウを広げることができる。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2009519272A JPWO2008153052A1 (ja) | 2007-06-11 | 2008-06-11 | プラズマ処理装置およびプラズマ処理装置の使用方法 |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2007153542 | 2007-06-11 | ||
JP2007-153542 | 2007-06-11 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2008153052A1 true WO2008153052A1 (ja) | 2008-12-18 |
Family
ID=40129657
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/JP2008/060671 WO2008153052A1 (ja) | 2007-06-11 | 2008-06-11 | プラズマ処理装置およびプラズマ処理装置の使用方法 |
Country Status (3)
Country | Link |
---|---|
JP (1) | JPWO2008153052A1 (ja) |
TW (1) | TW200908076A (ja) |
WO (1) | WO2008153052A1 (ja) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012038461A (ja) * | 2010-08-04 | 2012-02-23 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2013098337A (ja) * | 2011-10-31 | 2013-05-20 | Mitsubishi Heavy Ind Ltd | 真空処理装置 |
WO2013105358A1 (ja) * | 2012-01-10 | 2013-07-18 | 東京エレクトロン株式会社 | 表面波プラズマ処理装置 |
US20130264014A1 (en) * | 2012-03-12 | 2013-10-10 | Tokyo Electron Limited | Plasma processing apparatus |
Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10158847A (ja) * | 1996-12-06 | 1998-06-16 | Toshiba Corp | マイクロ波励起によるプラズマ処理装置 |
JPH11214196A (ja) * | 1998-01-29 | 1999-08-06 | Mitsubishi Electric Corp | プラズマ発生装置 |
JP2000286237A (ja) * | 1999-03-30 | 2000-10-13 | Rohm Co Ltd | 半導体基板用プラズマ表面処理装置におけるラジアルラインスロットアンテナの構造 |
JP2002203844A (ja) * | 2000-10-13 | 2002-07-19 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2003045848A (ja) * | 2001-07-27 | 2003-02-14 | Shibaura Mechatronics Corp | プラズマ処理装置 |
JP2004186303A (ja) * | 2002-12-02 | 2004-07-02 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2004200307A (ja) * | 2002-12-17 | 2004-07-15 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2005019508A (ja) * | 2003-06-24 | 2005-01-20 | Hitachi High-Technologies Corp | プラズマ処理装置及び処理方法 |
JP2005044822A (ja) * | 2003-07-22 | 2005-02-17 | Shibaura Mechatronics Corp | プラズマ処理装置 |
JP2005135801A (ja) * | 2003-10-31 | 2005-05-26 | Canon Inc | 処理装置 |
JP2005353364A (ja) * | 2004-06-09 | 2005-12-22 | Shibaura Mechatronics Corp | プラズマ発生装置、プラズマ処理装置及びプラズマ処理方法 |
JP2006310794A (ja) * | 2005-03-30 | 2006-11-09 | Tokyo Electron Ltd | プラズマ処理装置と方法 |
-
2008
- 2008-06-11 JP JP2009519272A patent/JPWO2008153052A1/ja not_active Ceased
- 2008-06-11 WO PCT/JP2008/060671 patent/WO2008153052A1/ja active Application Filing
- 2008-06-11 TW TW97121739A patent/TW200908076A/zh unknown
Patent Citations (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH10158847A (ja) * | 1996-12-06 | 1998-06-16 | Toshiba Corp | マイクロ波励起によるプラズマ処理装置 |
JPH11214196A (ja) * | 1998-01-29 | 1999-08-06 | Mitsubishi Electric Corp | プラズマ発生装置 |
JP2000286237A (ja) * | 1999-03-30 | 2000-10-13 | Rohm Co Ltd | 半導体基板用プラズマ表面処理装置におけるラジアルラインスロットアンテナの構造 |
JP2002203844A (ja) * | 2000-10-13 | 2002-07-19 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2003045848A (ja) * | 2001-07-27 | 2003-02-14 | Shibaura Mechatronics Corp | プラズマ処理装置 |
JP2004186303A (ja) * | 2002-12-02 | 2004-07-02 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2004200307A (ja) * | 2002-12-17 | 2004-07-15 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2005019508A (ja) * | 2003-06-24 | 2005-01-20 | Hitachi High-Technologies Corp | プラズマ処理装置及び処理方法 |
JP2005044822A (ja) * | 2003-07-22 | 2005-02-17 | Shibaura Mechatronics Corp | プラズマ処理装置 |
JP2005135801A (ja) * | 2003-10-31 | 2005-05-26 | Canon Inc | 処理装置 |
JP2005353364A (ja) * | 2004-06-09 | 2005-12-22 | Shibaura Mechatronics Corp | プラズマ発生装置、プラズマ処理装置及びプラズマ処理方法 |
JP2006310794A (ja) * | 2005-03-30 | 2006-11-09 | Tokyo Electron Ltd | プラズマ処理装置と方法 |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2012038461A (ja) * | 2010-08-04 | 2012-02-23 | Tokyo Electron Ltd | プラズマ処理装置 |
JP2013098337A (ja) * | 2011-10-31 | 2013-05-20 | Mitsubishi Heavy Ind Ltd | 真空処理装置 |
WO2013105358A1 (ja) * | 2012-01-10 | 2013-07-18 | 東京エレクトロン株式会社 | 表面波プラズマ処理装置 |
US20130264014A1 (en) * | 2012-03-12 | 2013-10-10 | Tokyo Electron Limited | Plasma processing apparatus |
US9807862B2 (en) * | 2012-03-12 | 2017-10-31 | Tokoyo Electron Limited | Plasma processing apparatus |
Also Published As
Publication number | Publication date |
---|---|
TW200908076A (en) | 2009-02-16 |
JPWO2008153052A1 (ja) | 2010-08-26 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2008153054A1 (ja) | プラズマ処理装置およびプラズマ処理装置の使用方法 | |
WO2008153053A1 (ja) | プラズマ処理装置、給電装置およびプラズマ処理装置の使用方法 | |
WO2007089836A3 (en) | Method and apparatus for producing plasma | |
WO2008153064A1 (ja) | プラズマ処理装置および処理方法 | |
MX2017005087A (es) | Metodo y aparato para transmitir ondas electromagneticas. | |
TW200705574A (en) | Plasma processing apparatus and method | |
WO2006038975A3 (en) | Method and system for improving coupling between a surface wave plasma source and a plasma space | |
WO2008063542A3 (en) | Apparatus and method for antenna rf feed | |
ATE348411T1 (de) | Kommunikationsverfahren und vorrichtung | |
WO2011021893A3 (en) | Apparatus and method of transmitting data block on uplink frequencies | |
WO2012048284A3 (en) | Microwave rotary kiln | |
WO2008153052A1 (ja) | プラズマ処理装置およびプラズマ処理装置の使用方法 | |
EP2012342A3 (en) | Hybrid etch chamber with decoupled plasma controls | |
WO2010056609A3 (en) | Integrated orthomode transducer | |
JP2009301807A5 (ja) | ||
WO2013030691A3 (fr) | Dispositif de manipulation d'objets par champ de force acoustique | |
MX2009004711A (es) | Division de tiempo de frecuencias en aplicaciones electromagneticas de fuente controlada (csem). | |
WO2009151009A3 (ja) | プラズマ処理装置 | |
MX2012003661A (es) | Aparato, metodo y programa para procesamiento de señales. | |
AR051488A1 (es) | Un aparato para determinar parametros fisicos en un objeto usando medicion y radiacion por ultrasonido y microondas simultaneas | |
WO2009101435A3 (en) | Apparatus and method for comminution of mineral ore using microwave energy | |
MY143610A (en) | Transmission line impedance matching | |
TW200802597A (en) | Plasma processing apparatus and plasma processing method | |
WO2009145579A3 (ko) | 스핀파의 주파수 제어가 가능한 마그노닉 결정 스핀파 소자 | |
WO2012177293A3 (en) | Transmission line rf applicator for plasma chamber |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
121 | Ep: the epo has been informed by wipo that ep was designated in this application |
Ref document number: 08765450 Country of ref document: EP Kind code of ref document: A1 |
|
ENP | Entry into the national phase |
Ref document number: 2009519272 Country of ref document: JP Kind code of ref document: A |
|
NENP | Non-entry into the national phase |
Ref country code: DE |
|
122 | Ep: pct application non-entry in european phase |
Ref document number: 08765450 Country of ref document: EP Kind code of ref document: A1 |