WO2008152873A1 - レーザ処理装置 - Google Patents

レーザ処理装置 Download PDF

Info

Publication number
WO2008152873A1
WO2008152873A1 PCT/JP2008/058840 JP2008058840W WO2008152873A1 WO 2008152873 A1 WO2008152873 A1 WO 2008152873A1 JP 2008058840 W JP2008058840 W JP 2008058840W WO 2008152873 A1 WO2008152873 A1 WO 2008152873A1
Authority
WO
WIPO (PCT)
Prior art keywords
laser
work
laser processing
gas
atmosphere
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/058840
Other languages
English (en)
French (fr)
Inventor
Masashi Machida
Miki Sawai
Yuichi Nakada
Hirotaka Sazuka
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Steel Works Ltd
Original Assignee
Japan Steel Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Steel Works Ltd filed Critical Japan Steel Works Ltd
Priority to KR1020117024776A priority Critical patent/KR101183511B1/ko
Priority to KR1020087026157A priority patent/KR101101198B1/ko
Publication of WO2008152873A1 publication Critical patent/WO2008152873A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/1462—Nozzles; Features related to nozzles
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/90—Thermal treatments, e.g. annealing or sintering

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

レーザ処理装置における被処理体へのレーザ照射部のガス雰囲気を良好に形成する。 被処理体（非晶質半導体薄膜１０）にレーザ光３を相対的に走査しつつ照射して前記被処理体の処理を行うレーザ処理装置において、照射雰囲気を形成するガスを前記被処理体の前記レーザ光照射部分近傍に噴射するガス噴射部（レーザ光照射口兼ガス噴射口８）と、該ガス噴射部近傍から前記走査方向に沿って前記被処理体表面と距離を保ちつつ伸張する整流面（整流板７ａ、７ｂ）を設ける。走査方向に沿って広範囲にガス雰囲気を形成することができ、レーザ光照射時のガス雰囲気を良好にしてアニールなどのレーザ処理をより良好なものにできる。
PCT/JP2008/058840 2007-06-12 2008-05-14 レーザ処理装置 Ceased WO2008152873A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020117024776A KR101183511B1 (ko) 2007-06-12 2008-05-14 레이저 처리 장치
KR1020087026157A KR101101198B1 (ko) 2007-06-12 2008-05-14 레이저 처리 장치

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-154661 2007-06-12
JP2007154661A JP4936328B2 (ja) 2007-06-12 2007-06-12 レーザ処理装置

Publications (1)

Publication Number Publication Date
WO2008152873A1 true WO2008152873A1 (ja) 2008-12-18

Family

ID=40129486

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058840 Ceased WO2008152873A1 (ja) 2007-06-12 2008-05-14 レーザ処理装置

Country Status (3)

Country Link
JP (1) JP4936328B2 (ja)
KR (2) KR101101198B1 (ja)
WO (1) WO2008152873A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11810799B2 (en) 2016-10-20 2023-11-07 Jsw Aktina System Co., Ltd. Laser processing apparatus and laser processing method

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110032359A (ko) * 2009-09-22 2011-03-30 삼성모바일디스플레이주식회사 레이저 결정화 장치
KR102594040B1 (ko) * 2021-09-30 2023-10-25 (주)알엔알랩 반도체 열처리용 레이저 처리 장치 및 레이저 처리 방법

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6428809A (en) * 1987-07-23 1989-01-31 Fujitsu Ltd Laser annealing device
JP2002093738A (ja) * 2000-09-18 2002-03-29 Toshiba Corp 多結晶半導体膜の製造装置
JP2005166768A (ja) * 2003-12-01 2005-06-23 Advanced Display Inc レーザーアニール装置及び薄膜トランジスタ製造方法
JP2007288128A (ja) * 2006-03-23 2007-11-01 Ihi Corp レーザアニール装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2006108271A (ja) * 2004-10-04 2006-04-20 Ulvac Japan Ltd アモルファスシリコン膜をポリシリコン膜に変換するための方法および装置
US20070117287A1 (en) * 2005-11-23 2007-05-24 Semiconductor Energy Laboratory Co., Ltd. Laser irradiation apparatus

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS6428809A (en) * 1987-07-23 1989-01-31 Fujitsu Ltd Laser annealing device
JP2002093738A (ja) * 2000-09-18 2002-03-29 Toshiba Corp 多結晶半導体膜の製造装置
JP2005166768A (ja) * 2003-12-01 2005-06-23 Advanced Display Inc レーザーアニール装置及び薄膜トランジスタ製造方法
JP2007288128A (ja) * 2006-03-23 2007-11-01 Ihi Corp レーザアニール装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11810799B2 (en) 2016-10-20 2023-11-07 Jsw Aktina System Co., Ltd. Laser processing apparatus and laser processing method

Also Published As

Publication number Publication date
KR20090018782A (ko) 2009-02-23
JP4936328B2 (ja) 2012-05-23
JP2008311249A (ja) 2008-12-25
KR20110133612A (ko) 2011-12-13
KR101183511B1 (ko) 2012-09-20
KR101101198B1 (ko) 2012-01-04

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