ATE513065T1 - Verfahren und vorrichtung zur kammerreinigung durch in-situ-plasmaanregung - Google Patents

Verfahren und vorrichtung zur kammerreinigung durch in-situ-plasmaanregung

Info

Publication number
ATE513065T1
ATE513065T1 AT08171764T AT08171764T ATE513065T1 AT E513065 T1 ATE513065 T1 AT E513065T1 AT 08171764 T AT08171764 T AT 08171764T AT 08171764 T AT08171764 T AT 08171764T AT E513065 T1 ATE513065 T1 AT E513065T1
Authority
AT
Austria
Prior art keywords
substrate
plasma
source opening
chamber
situ plasma
Prior art date
Application number
AT08171764T
Other languages
English (en)
Inventor
Judy Huang
Michael S Barnes
Terry Bluck
Original Assignee
Intevac Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intevac Inc filed Critical Intevac Inc
Application granted granted Critical
Publication of ATE513065T1 publication Critical patent/ATE513065T1/de

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32192—Microwave generated discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/32798—Further details of plasma apparatus not provided for in groups H01J37/3244 - H01J37/32788; special provisions for cleaning or maintenance of the apparatus
    • H01J37/32853—Hygiene
    • H01J37/32862—In situ cleaning of vessels and/or internal parts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Analytical Chemistry (AREA)
  • Organic Chemistry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • General Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Drying Of Semiconductors (AREA)
  • Chemical Vapour Deposition (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
AT08171764T 2007-12-19 2008-12-16 Verfahren und vorrichtung zur kammerreinigung durch in-situ-plasmaanregung ATE513065T1 (de)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US11/960,442 US20090159104A1 (en) 2007-12-19 2007-12-19 Method and apparatus for chamber cleaning by in-situ plasma excitation

Publications (1)

Publication Number Publication Date
ATE513065T1 true ATE513065T1 (de) 2011-07-15

Family

ID=40548017

Family Applications (1)

Application Number Title Priority Date Filing Date
AT08171764T ATE513065T1 (de) 2007-12-19 2008-12-16 Verfahren und vorrichtung zur kammerreinigung durch in-situ-plasmaanregung

Country Status (8)

Country Link
US (1) US20090159104A1 (de)
EP (1) EP2080817B1 (de)
JP (1) JP2009152599A (de)
KR (1) KR20090067112A (de)
CN (1) CN101488447A (de)
AT (1) ATE513065T1 (de)
SG (1) SG153771A1 (de)
TW (1) TW200935505A (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20130012671A (ko) * 2011-07-26 2013-02-05 삼성전자주식회사 반도체 소자 제조 장비의 세정 방법
US20140213016A1 (en) * 2013-01-30 2014-07-31 Applied Materials, Inc. In situ silicon surface pre-clean for high performance passivation of silicon solar cells
CN106001004A (zh) * 2016-07-08 2016-10-12 北京睿昱达科技有限公司 一种辉光放电等离子体光伏板清洁装置及光伏板清洁方法
CN106435470A (zh) * 2016-11-09 2017-02-22 上海华力微电子有限公司 一种实现自动清洗的烘烤腔结构及其自动清洗方法
CN108580445A (zh) * 2018-06-29 2018-09-28 东莞塔菲尔新能源科技有限公司 一种动力电池顶盖的清洗装置及清洗方法
US10751765B2 (en) 2018-08-13 2020-08-25 Applied Materials, Inc. Remote plasma source cleaning nozzle for cleaning a gas distribution plate
JP2021034515A (ja) * 2019-08-22 2021-03-01 東京エレクトロン株式会社 クリーニング方法及びマイクロ波プラズマ処理装置
US20210391156A1 (en) * 2020-06-10 2021-12-16 Applied Materials, Inc. Clean unit for chamber exhaust cleaning

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5900103A (en) * 1994-04-20 1999-05-04 Tokyo Electron Limited Plasma treatment method and apparatus
US5795831A (en) * 1996-10-16 1998-08-18 Ulvac Technologies, Inc. Cold processes for cleaning and stripping photoresist from surfaces of semiconductor wafers
US8075789B1 (en) * 1997-07-11 2011-12-13 Applied Materials, Inc. Remote plasma cleaning source having reduced reactivity with a substrate processing chamber
US20030049372A1 (en) * 1997-08-11 2003-03-13 Cook Robert C. High rate deposition at low pressures in a small batch reactor
JP2002261081A (ja) * 2001-03-01 2002-09-13 Asm Japan Kk 半導体ウエハのエッチング装置及び方法
JP2002343787A (ja) * 2001-05-17 2002-11-29 Research Institute Of Innovative Technology For The Earth プラズマ処理装置およびそのクリーニング方法
US7159597B2 (en) * 2001-06-01 2007-01-09 Applied Materials, Inc. Multistep remote plasma clean process
DE10161469A1 (de) * 2001-12-13 2003-07-03 Schott Glas Volumenoptimierter Reaktor zur beidseitig gleichzeitigen Beschichtung von Brillengläsern
JP3666751B2 (ja) * 2003-11-28 2005-06-29 東京エレクトロン株式会社 絶縁膜の形成方法及び絶縁膜形成システム
KR100580584B1 (ko) * 2004-05-21 2006-05-16 삼성전자주식회사 리모트 플라즈마 발생 튜브의 표면 세정 방법과 이를이용하는 기판 처리 방법 및 기판 처리 장치

Also Published As

Publication number Publication date
CN101488447A (zh) 2009-07-22
KR20090067112A (ko) 2009-06-24
JP2009152599A (ja) 2009-07-09
EP2080817B1 (de) 2011-06-15
US20090159104A1 (en) 2009-06-25
SG153771A1 (en) 2009-07-29
EP2080817A1 (de) 2009-07-22
TW200935505A (en) 2009-08-16

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