WO2008149945A1 - 半導体発光素子およびその製造方法 - Google Patents

半導体発光素子およびその製造方法 Download PDF

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Publication number
WO2008149945A1
WO2008149945A1 PCT/JP2008/060385 JP2008060385W WO2008149945A1 WO 2008149945 A1 WO2008149945 A1 WO 2008149945A1 JP 2008060385 W JP2008060385 W JP 2008060385W WO 2008149945 A1 WO2008149945 A1 WO 2008149945A1
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WO
WIPO (PCT)
Prior art keywords
iii nitride
nitride semiconductor
emitting element
semiconductor light
laminate structure
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/060385
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English (en)
French (fr)
Inventor
Kuniyoshi Okamoto
Hiroaki Ohta
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Rohm Co Ltd
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Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to US12/451,920 priority Critical patent/US8124982B2/en
Publication of WO2008149945A1 publication Critical patent/WO2008149945A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3202—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth
    • H01S5/32025—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures grown on specifically orientated substrates, or using orientation dependent growth non-polar orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2302/00—Amplification / lasing wavelength
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/028—Coatings ; Treatment of the laser facets, e.g. etching, passivation layers or reflecting layers
    • H01S5/0282—Passivation layers or treatments
    • H01S5/0283—Optically inactive coating on the facet, e.g. half-wave coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2201—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure in a specific crystallographic orientation

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)
  • Led Devices (AREA)

Abstract

　この半導体発光素子は、Ｉｎを含む活性層ならびにこの活性層を挟むように積層されたｐ型層およびｎ型層を有するIII族窒化物半導体積層構造を含む。III族窒化物半導体積層構造は、ｃ軸方向へのオフ角が負の非極性面を主面とするIII族窒化物半導体からなる。活性層の発光波長が４５０ｎｍ以上の場合に大きな効果が得られる。III族窒化物半導体積層構造を構成するIII族窒化物半導体は、ｃ軸方向へのオフ角θが－１°＜θ＜０°を満たしていることが好ましい。
PCT/JP2008/060385 2007-06-08 2008-06-05 半導体発光素子およびその製造方法 Ceased WO2008149945A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
US12/451,920 US8124982B2 (en) 2007-06-08 2008-06-05 Semiconductor light-emitting element and method for fabrication the same

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007153045A JP5118392B2 (ja) 2007-06-08 2007-06-08 半導体発光素子およびその製造方法
JP2007-153045 2007-06-08

Publications (1)

Publication Number Publication Date
WO2008149945A1 true WO2008149945A1 (ja) 2008-12-11

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/060385 Ceased WO2008149945A1 (ja) 2007-06-08 2008-06-05 半導体発光素子およびその製造方法

Country Status (4)

Country Link
US (1) US8124982B2 (ja)
JP (1) JP5118392B2 (ja)
TW (1) TWI449208B (ja)
WO (1) WO2008149945A1 (ja)

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CN102396083A (zh) * 2009-04-13 2012-03-28 天空公司 用于激光器应用的使用gan衬底的光学装置结构
CN102396083B (zh) * 2009-04-13 2015-12-16 天空激光二极管有限公司 用于激光器应用的使用gan衬底的光学装置结构

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