WO2008143083A1 - レーザ処理装置のガス噴射手段 - Google Patents

レーザ処理装置のガス噴射手段 Download PDF

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Publication number
WO2008143083A1
WO2008143083A1 PCT/JP2008/058836 JP2008058836W WO2008143083A1 WO 2008143083 A1 WO2008143083 A1 WO 2008143083A1 JP 2008058836 W JP2008058836 W JP 2008058836W WO 2008143083 A1 WO2008143083 A1 WO 2008143083A1
Authority
WO
WIPO (PCT)
Prior art keywords
gas
processing apparatus
laser processing
processed
laser beam
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/058836
Other languages
English (en)
French (fr)
Inventor
Osamu Kato
Miki Sawai
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Steel Works Ltd
Original Assignee
Japan Steel Works Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Steel Works Ltd filed Critical Japan Steel Works Ltd
Priority to KR1020087029133A priority Critical patent/KR101155370B1/ko
Publication of WO2008143083A1 publication Critical patent/WO2008143083A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
    • B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
    • B23K26/00—Working by laser beam, e.g. welding, cutting or boring
    • B23K26/14—Working by laser beam, e.g. welding, cutting or boring using a fluid stream, e.g. a jet of gas, in conjunction with the laser beam; Nozzles therefor
    • B23K26/1462—Nozzles; Features related to nozzles
    • B23K26/1464—Supply to, or discharge from, nozzles of media, e.g. gas, powder, wire
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P34/00—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices
    • H10P34/40—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation
    • H10P34/42—Irradiation with electromagnetic or particle radiation of wafers, substrates or parts of devices with high-energy radiation with electromagnetic radiation, e.g. laser annealing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/381—Beam shaping, e.g. using a mask
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/3808—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth using laser beams
    • H10P14/3816—Pulsed laser beam
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/38—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials characterised by treatments done after the formation of the materials
    • H10P14/3802—Crystallisation or recrystallisation of non-monocrystalline semiconductor materials, e.g. regrowth
    • H10P14/382—Scanning of a beam

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Mechanical Engineering (AREA)
  • Recrystallisation Techniques (AREA)

Abstract

レーザ処理装置における被処理体へのレーザ照射部のガス雰囲気を良好に形成する。 　被処理体（非晶質半導体薄膜２）にレーザ光６を照射して前記被処理体の処理を行うレーザ処理装置に備えられ、照射雰囲気を形成するガスを前記被処理体の前記レーザ光照射部分近傍に噴射するガス噴射手段であって、該噴射手段は、前記ガスの導入部（ガス供給管１２）と、前記ガスが前記被処理体に向けて噴射されるガス噴射口１５と、前記ガス導入部から前記ガス噴射口に至るガス流路１３を有しており、該ガス流路に、ガスの流れ方向に対面してガス流を乱すことでガスの流れ方向と交差する方向におけるガス流を均す均流面が設けられている。被処理体のレーザ光照射部付近に均等な照射雰囲気を形成でき、レーザ光の照射による処理を均等かつ良質に行うことができる。
PCT/JP2008/058836 2007-05-23 2008-05-14 レーザ処理装置のガス噴射手段 Ceased WO2008143083A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1020087029133A KR101155370B1 (ko) 2007-05-23 2008-05-14 레이저 처리 장치의 가스 분사 수단

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-136156 2007-05-23
JP2007136156A JP4947646B2 (ja) 2007-05-23 2007-05-23 レーザ処理装置のガス噴射手段

Publications (1)

Publication Number Publication Date
WO2008143083A1 true WO2008143083A1 (ja) 2008-11-27

Family

ID=40031792

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058836 Ceased WO2008143083A1 (ja) 2007-05-23 2008-05-14 レーザ処理装置のガス噴射手段

Country Status (3)

Country Link
JP (1) JP4947646B2 (ja)
KR (1) KR101155370B1 (ja)
WO (1) WO2008143083A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014112670A (ja) * 2012-11-13 2014-06-19 Ap Systems Inc レーザー熱処理装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20110032359A (ko) * 2009-09-22 2011-03-30 삼성모바일디스플레이주식회사 레이저 결정화 장치
JP4865878B2 (ja) * 2010-03-25 2012-02-01 株式会社日本製鋼所 雰囲気安定化方法およびレーザ処理装置
KR101368343B1 (ko) * 2011-10-19 2014-03-03 주식회사 테스 기판증착장치의 인젝터 및 인젝터 어셈블리
KR101777761B1 (ko) * 2013-10-21 2017-09-13 에이피시스템 주식회사 열처리 장치
KR101777688B1 (ko) * 2013-10-21 2017-09-27 에이피시스템 주식회사 가스 분사 유닛 및 이를 포함하는 열처리 장치
KR101706736B1 (ko) * 2015-08-13 2017-02-15 세메스 주식회사 기판 처리 장치
KR101856653B1 (ko) * 2016-10-17 2018-06-20 주식회사 이오테크닉스 기압을 이용한 마스크 고정모듈

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004152823A (ja) * 2002-10-29 2004-05-27 Shimada Phys & Chem Ind Co Ltd レーザーアニール装置用ノズルおよびそれを用いたレーザーアニール装置
JP2005166768A (ja) * 2003-12-01 2005-06-23 Advanced Display Inc レーザーアニール装置及び薄膜トランジスタ製造方法
JP2006108271A (ja) * 2004-10-04 2006-04-20 Ulvac Japan Ltd アモルファスシリコン膜をポリシリコン膜に変換するための方法および装置
JP2007288128A (ja) * 2006-03-23 2007-11-01 Ihi Corp レーザアニール装置

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH118205A (ja) * 1997-04-25 1999-01-12 Sharp Corp 半導体装置の製造方法およびレーザー光照射装置

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2004152823A (ja) * 2002-10-29 2004-05-27 Shimada Phys & Chem Ind Co Ltd レーザーアニール装置用ノズルおよびそれを用いたレーザーアニール装置
JP2005166768A (ja) * 2003-12-01 2005-06-23 Advanced Display Inc レーザーアニール装置及び薄膜トランジスタ製造方法
JP2006108271A (ja) * 2004-10-04 2006-04-20 Ulvac Japan Ltd アモルファスシリコン膜をポリシリコン膜に変換するための方法および装置
JP2007288128A (ja) * 2006-03-23 2007-11-01 Ihi Corp レーザアニール装置

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2014112670A (ja) * 2012-11-13 2014-06-19 Ap Systems Inc レーザー熱処理装置

Also Published As

Publication number Publication date
JP4947646B2 (ja) 2012-06-06
KR101155370B1 (ko) 2012-06-19
KR20090042879A (ko) 2009-05-04
JP2008294101A (ja) 2008-12-04

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