WO2008143024A1 - 薄膜成膜装置 - Google Patents

薄膜成膜装置 Download PDF

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Publication number
WO2008143024A1
WO2008143024A1 PCT/JP2008/058602 JP2008058602W WO2008143024A1 WO 2008143024 A1 WO2008143024 A1 WO 2008143024A1 JP 2008058602 W JP2008058602 W JP 2008058602W WO 2008143024 A1 WO2008143024 A1 WO 2008143024A1
Authority
WO
WIPO (PCT)
Prior art keywords
film forming
gas
thin film
reaction chamber
forming apparatus
Prior art date
Application number
PCT/JP2008/058602
Other languages
English (en)
French (fr)
Inventor
Akiko Kobayashi
Original Assignee
Canon Anelva Corporation
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Canon Anelva Corporation filed Critical Canon Anelva Corporation
Publication of WO2008143024A1 publication Critical patent/WO2008143024A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

　成膜温度の低温化を達成でき、原料ガスの切り替え時における原料ガスの混合を防止し、成膜処理時間を短縮することができ、熱フィラメントの長寿命化も図ることができる薄膜成膜装置を提供する。 　減圧可能な反応室１内に、被処理基板２を保持するとともに、温度制御可能な基板ホルダ３を配置し、反応室１に原料ガスＡ、Ｂを導入して基板２上に薄膜を成膜する薄膜成膜装置であって、反応室１に接続され、少なくとも２種以上の原料ガスＡ、Ｂ及びパージガスＣを供給するガス供給管２１、２２、２３に連通するガス導入ポート６、７と反応室１外に設けられ、２種以上の原料ガスＡ、Ｂのうち、少なくとも１種類の原料ガスＢが通過する熱フィラメント８を有するガス加熱室１０と、導入ポート６、７に導入するガスを切り替えるガス切替え機構９と、を備えている。
PCT/JP2008/058602 2007-05-23 2008-05-09 薄膜成膜装置 WO2008143024A1 (ja)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007136319 2007-05-23
JP2007-136319 2007-05-23

Publications (1)

Publication Number Publication Date
WO2008143024A1 true WO2008143024A1 (ja) 2008-11-27

Family

ID=40031734

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058602 WO2008143024A1 (ja) 2007-05-23 2008-05-09 薄膜成膜装置

Country Status (1)

Country Link
WO (1) WO2008143024A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012041576A (ja) * 2010-08-16 2012-03-01 Ulvac Japan Ltd 通電加熱線、成膜装置及び通電加熱線の製造方法
WO2012118200A1 (ja) * 2011-03-03 2012-09-07 国立大学法人東京大学 金属薄膜の製膜方法、金属薄膜、および金属薄膜の製膜装置
JPWO2020188654A1 (ja) * 2019-03-15 2020-09-24

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005302822A (ja) * 2004-04-07 2005-10-27 Ulvac Japan Ltd 薄膜製造装置および薄膜製造方法
JP2006028572A (ja) * 2004-07-14 2006-02-02 Ulvac Japan Ltd 薄膜形成方法
JP2006057162A (ja) * 2004-08-23 2006-03-02 Ulvac Japan Ltd バリア膜の形成方法
WO2006098260A1 (ja) * 2005-03-17 2006-09-21 Ulvac, Inc. 成膜装置及び成膜方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2005302822A (ja) * 2004-04-07 2005-10-27 Ulvac Japan Ltd 薄膜製造装置および薄膜製造方法
JP2006028572A (ja) * 2004-07-14 2006-02-02 Ulvac Japan Ltd 薄膜形成方法
JP2006057162A (ja) * 2004-08-23 2006-03-02 Ulvac Japan Ltd バリア膜の形成方法
WO2006098260A1 (ja) * 2005-03-17 2006-09-21 Ulvac, Inc. 成膜装置及び成膜方法

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012041576A (ja) * 2010-08-16 2012-03-01 Ulvac Japan Ltd 通電加熱線、成膜装置及び通電加熱線の製造方法
WO2012118200A1 (ja) * 2011-03-03 2012-09-07 国立大学法人東京大学 金属薄膜の製膜方法、金属薄膜、および金属薄膜の製膜装置
JPWO2020188654A1 (ja) * 2019-03-15 2020-09-24
WO2020188654A1 (ja) * 2019-03-15 2020-09-24 株式会社Ｋｏｋｕｓａｉ Ｅｌｅｃｔｒｉｃ 半導体装置の製造方法、基板処理装置およびプログラム
JP7179962B2 (ja) 2019-03-15 2022-11-29 株式会社Kokusai Electric 半導体装置の製造方法、基板処理方法、基板処理装置およびプログラム

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