WO2008135516A3 - Gasversorgungssystem und verfahren zur bereitstellung eines gasförmigen abscheidungsmediums - Google Patents

Gasversorgungssystem und verfahren zur bereitstellung eines gasförmigen abscheidungsmediums Download PDF

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Publication number
WO2008135516A3
WO2008135516A3 PCT/EP2008/055385 EP2008055385W WO2008135516A3 WO 2008135516 A3 WO2008135516 A3 WO 2008135516A3 EP 2008055385 W EP2008055385 W EP 2008055385W WO 2008135516 A3 WO2008135516 A3 WO 2008135516A3
Authority
WO
WIPO (PCT)
Prior art keywords
reaction chamber
gas supply
gas
supply system
gas phase
Prior art date
Application number
PCT/EP2008/055385
Other languages
English (en)
French (fr)
Other versions
WO2008135516A2 (de
Inventor
Oliver Noell
Tobias Kleyer
Original Assignee
Stein Ralf
Oliver Noell
Tobias Kleyer
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Stein Ralf, Oliver Noell, Tobias Kleyer filed Critical Stein Ralf
Priority to US12/598,470 priority Critical patent/US20110033618A1/en
Priority to EP08749961A priority patent/EP2152930A2/de
Publication of WO2008135516A2 publication Critical patent/WO2008135516A2/de
Publication of WO2008135516A3 publication Critical patent/WO2008135516A3/de

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4485—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation without using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45561—Gas plumbing upstream of the reaction chamber

Landscapes

  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

Ein Gasversorgungssystem für eine Gasphasenabscheidungs-Reaktionskammer (48), insbesondere für eine CVD-Gasphasenabscheidungs-Reaktionskammer oder für eine PECVD-Gasphasenabscheidungs-Reaktionskammer, weist eine Gasversorgungseinrichtung (10) auf, wobei die Gasversorgungseinrichtung mindestens ein Heizelement (16) zum Erwärmen eines Abscheidungsmediums (20) und zur Überführung des Abscheidungsmediums in die Gasphase aufweist. Ferner weist das Gasversorgungssystem eine Gaszufuhreinrichtung zum Transport des gasförmigen Abscheidungsmediums von der Gasversorgungseinrichtung in die Gasphasenabscheidungs-Reaktionskammer auf, wobei die Gaszufuhreinrichtung am Übergang zur Gasphasenabscheidungs-Reaktionskammer ein Abdichtungselement (40) aufweist. Dadurch ist es möglich, ein Gasversorgungssystem für eine Gasphasenabscheidungs-Reaktionskammer zur Verfügung zu stellen, welches auch bei Abscheidungsmedien, die bei Raumtemperatur nicht im gasförmigen Zustand vorliegen, eine homogene Einspeisung in die Reaktionskammer ermöglicht.
PCT/EP2008/055385 2007-05-02 2008-04-30 Gasversorgungssystem und verfahren zur bereitstellung eines gasförmigen abscheidungsmediums WO2008135516A2 (de)

Priority Applications (2)

Application Number Priority Date Filing Date Title
US12/598,470 US20110033618A1 (en) 2007-05-02 2008-04-30 Gas supply system and method for providing a gaseos deposition medium
EP08749961A EP2152930A2 (de) 2007-05-02 2008-04-30 Gasversorgungssystem und verfahren zur bereitstellung eines gasförmigen abscheidungsmediums

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE102007020852A DE102007020852A1 (de) 2007-05-02 2007-05-02 Gasversorgungssystem und Verfahren zur Bereitstellung eines gasförmigen Abscheidungsmediums
DE102007020852.0 2007-05-02

Publications (2)

Publication Number Publication Date
WO2008135516A2 WO2008135516A2 (de) 2008-11-13
WO2008135516A3 true WO2008135516A3 (de) 2009-04-16

Family

ID=39627613

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2008/055385 WO2008135516A2 (de) 2007-05-02 2008-04-30 Gasversorgungssystem und verfahren zur bereitstellung eines gasförmigen abscheidungsmediums

Country Status (4)

Country Link
US (1) US20110033618A1 (de)
EP (1) EP2152930A2 (de)
DE (1) DE102007020852A1 (de)
WO (1) WO2008135516A2 (de)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007047629A1 (de) * 2007-04-13 2008-10-16 Stein, Ralf Verfahren zum Aufbringen einer hochfesten Beschichtung auf Werkstücke und/oder Werkstoffe
GB0802687D0 (en) * 2008-02-14 2008-03-19 P2I Ltd Vapour delivery system
DE102009000821B4 (de) 2009-02-12 2013-05-02 Surcoatec Ag Verfahren zum Aufbringen einer Beschichtung auf Werkstücke und/oder Werkstoffe aufweisend mindestens ein leicht oxidierbares Nichteisenmetall sowie Werkstück und/oder Werkstoff hergestellt nach dem Verfahren
US11926894B2 (en) 2016-09-30 2024-03-12 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
US10876205B2 (en) * 2016-09-30 2020-12-29 Asm Ip Holding B.V. Reactant vaporizer and related systems and methods
US11634812B2 (en) 2018-08-16 2023-04-25 Asm Ip Holding B.V. Solid source sublimator
US11624113B2 (en) 2019-09-13 2023-04-11 Asm Ip Holding B.V. Heating zone separation for reactant evaporation system
CN114150288B (zh) * 2021-11-11 2023-05-16 武汉材料保护研究所有限公司 一种渗剂发生器、化学气相沉积反应装置及气相沉积方法

Citations (4)

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Publication number Priority date Publication date Assignee Title
US4640221A (en) * 1985-10-30 1987-02-03 International Business Machines Corporation Vacuum deposition system with improved mass flow control
FR2868434A1 (fr) * 2004-04-06 2005-10-07 Neyco Sa Procedes de revetement d'un substrat et de formation d'un film colore et dispositif associe
US20060032444A1 (en) * 2004-08-10 2006-02-16 Tokyo Electron Limited Film forming apparatus and film forming method
EP1676934A1 (de) * 2004-12-30 2006-07-05 STMicroelectronics S.r.l. CVD Verfahren und CVD Kammer zum Abscheiden von Titan-Siliciumnitrid für Phasenänderungsspeicher

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DE1221520B (de) * 1955-07-07 1966-07-21 Union Carbide Corp Verfahren und Vorrichtung zum Gasplattieren mittels eines aus durch Verdampfen einerMetallverbindung erzeugten und einem auf deren Dampftemperatur erhitzten Traegergas erhaltenen Plattierungsgasgemisches
DE3801147A1 (de) * 1988-01-16 1989-07-27 Philips Patentverwaltung Vorrichtung zum erzeugen eines mit dem dampf eines wenig fluechtigen stoffes angereicherten gasstroms
US4844006A (en) * 1988-03-07 1989-07-04 Akzo America Inc. Apparatus to provide a vaporized reactant for chemical-vapor deposition
US5316796A (en) * 1990-03-09 1994-05-31 Nippon Telegraph And Telephone Corporation Process for growing a thin metallic film
JPH06196419A (ja) * 1992-12-24 1994-07-15 Canon Inc 化学気相堆積装置及びそれによる半導体装置の製造方法
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Publication number Priority date Publication date Assignee Title
US4640221A (en) * 1985-10-30 1987-02-03 International Business Machines Corporation Vacuum deposition system with improved mass flow control
FR2868434A1 (fr) * 2004-04-06 2005-10-07 Neyco Sa Procedes de revetement d'un substrat et de formation d'un film colore et dispositif associe
US20060032444A1 (en) * 2004-08-10 2006-02-16 Tokyo Electron Limited Film forming apparatus and film forming method
EP1676934A1 (de) * 2004-12-30 2006-07-05 STMicroelectronics S.r.l. CVD Verfahren und CVD Kammer zum Abscheiden von Titan-Siliciumnitrid für Phasenänderungsspeicher

Also Published As

Publication number Publication date
EP2152930A2 (de) 2010-02-17
US20110033618A1 (en) 2011-02-10
WO2008135516A2 (de) 2008-11-13
DE102007020852A1 (de) 2008-11-06

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