WO2008139906A1 - スパッタリングターゲット及びその製造方法 - Google Patents

スパッタリングターゲット及びその製造方法 Download PDF

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Publication number
WO2008139906A1
WO2008139906A1 PCT/JP2008/058136 JP2008058136W WO2008139906A1 WO 2008139906 A1 WO2008139906 A1 WO 2008139906A1 JP 2008058136 W JP2008058136 W JP 2008058136W WO 2008139906 A1 WO2008139906 A1 WO 2008139906A1
Authority
WO
WIPO (PCT)
Prior art keywords
sputtering
sputtering target
deposit
manufacturing
target
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/058136
Other languages
English (en)
French (fr)
Inventor
Seiichiro Takahashi
Junichi Kiyoto
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Mitsui Kinzoku Co Ltd
Original Assignee
Mitsui Mining and Smelting Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining and Smelting Co Ltd filed Critical Mitsui Mining and Smelting Co Ltd
Priority to JP2008527238A priority Critical patent/JPWO2008139906A1/ja
Publication of WO2008139906A1 publication Critical patent/WO2008139906A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)

Abstract

　初期安定性を著しく向上させると同時にスパッタリング中期および後期のアーキングを低減し、しかも低コストで製造できるスパッタリングターゲット及びその製造方法並びにスパッタリング方法を提供する。 　スパッタリングに供されて非エロージョン部へ堆積物が堆積したものであり、当該堆積物が、少なくとも界面近傍の層まで結晶性が良好に堆積しているものである。また、スパッタリングに供されて５０Ｗｈ／ｃｍ2以上のエネルギーが投入された後の非エロージョン部への堆積物がスパッタ面との間に空隙が実質的に存在することなく堆積しているものであり、また、ターゲットのスパッタ面に水吸着層を有する。
PCT/JP2008/058136 2007-04-27 2008-04-25 スパッタリングターゲット及びその製造方法 Ceased WO2008139906A1 (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008527238A JPWO2008139906A1 (ja) 2007-04-27 2008-04-25 スパッタリングターゲット及びその製造方法

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007120146 2007-04-27
JP2007-120146 2007-04-27

Publications (1)

Publication Number Publication Date
WO2008139906A1 true WO2008139906A1 (ja) 2008-11-20

Family

ID=40002122

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058136 Ceased WO2008139906A1 (ja) 2007-04-27 2008-04-25 スパッタリングターゲット及びその製造方法

Country Status (5)

Country Link
JP (1) JPWO2008139906A1 (ja)
KR (1) KR20090020624A (ja)
CN (1) CN101542012A (ja)
TW (1) TW200900521A (ja)
WO (1) WO2008139906A1 (ja)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012172217A (ja) * 2011-02-23 2012-09-10 Taiheiyo Cement Corp スパッタリングターゲット及びその製造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07258826A (ja) * 1994-03-18 1995-10-09 Fujitsu Ltd 薄膜半導体装置の製造方法
JPH1046331A (ja) * 1996-07-30 1998-02-17 Anelva Corp スパッタ成膜法およびスパッタ装置
JP2000256842A (ja) * 1999-01-08 2000-09-19 Tosoh Corp Ｉｔｏスパッタリングターゲット、並びにｉｔｏ焼結体及び透明導電膜の製造方法
JP2002371355A (ja) * 2001-06-14 2002-12-26 Nitto Denko Corp 透明薄膜の製造方法
JP2003016858A (ja) * 2001-06-29 2003-01-17 Sanyo Electric Co Ltd インジウムスズ酸化膜の製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07258826A (ja) * 1994-03-18 1995-10-09 Fujitsu Ltd 薄膜半導体装置の製造方法
JPH1046331A (ja) * 1996-07-30 1998-02-17 Anelva Corp スパッタ成膜法およびスパッタ装置
JP2000256842A (ja) * 1999-01-08 2000-09-19 Tosoh Corp Ｉｔｏスパッタリングターゲット、並びにｉｔｏ焼結体及び透明導電膜の製造方法
JP2002371355A (ja) * 2001-06-14 2002-12-26 Nitto Denko Corp 透明薄膜の製造方法
JP2003016858A (ja) * 2001-06-29 2003-01-17 Sanyo Electric Co Ltd インジウムスズ酸化膜の製造方法

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012172217A (ja) * 2011-02-23 2012-09-10 Taiheiyo Cement Corp スパッタリングターゲット及びその製造方法

Also Published As

Publication number Publication date
CN101542012A (zh) 2009-09-23
JPWO2008139906A1 (ja) 2010-08-05
KR20090020624A (ko) 2009-02-26
TW200900521A (en) 2009-01-01

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