WO2008139906A1 - Sputtering target and its manufacturing method - Google Patents

Sputtering target and its manufacturing method Download PDF

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Publication number
WO2008139906A1
WO2008139906A1 PCT/JP2008/058136 JP2008058136W WO2008139906A1 WO 2008139906 A1 WO2008139906 A1 WO 2008139906A1 JP 2008058136 W JP2008058136 W JP 2008058136W WO 2008139906 A1 WO2008139906 A1 WO 2008139906A1
Authority
WO
WIPO (PCT)
Prior art keywords
sputtering
sputtering target
deposit
manufacturing
target
Prior art date
Application number
PCT/JP2008/058136
Other languages
French (fr)
Japanese (ja)
Inventor
Seiichiro Takahashi
Junichi Kiyoto
Original Assignee
Mitsui Mining & Smelting Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Mitsui Mining & Smelting Co., Ltd. filed Critical Mitsui Mining & Smelting Co., Ltd.
Priority to JP2008527238A priority Critical patent/JPWO2008139906A1/en
Publication of WO2008139906A1 publication Critical patent/WO2008139906A1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
    • C23C14/08—Oxides
    • C23C14/083—Oxides of refractory metals or yttrium
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/34—Sputtering
    • C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
    • C23C14/3414—Metallurgical or chemical aspects of target preparation, e.g. casting, powder metallurgy
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/548—Controlling the composition

Abstract

A sputtering target exhibiting a significantly enhanced initial stability, causing reduced arcings at the sputtering middle and last stages, and manufactured at low cost, its manufacturing method, and a sputtering method are provided. The sputtering target is used for sputtering and has a deposit on a non-erosion part. At least the layer near the interface of the deposit has a good crystallinity. Alternatively, the sputtering target is used for sputtering and there is substantially no gap between the deposit on a non-erosion part after energy of 50 Wh/cm2 or more is inputted and the sputter surface. The sputter surface of the target has a water-adsorptive layer.
PCT/JP2008/058136 2007-04-27 2008-04-25 Sputtering target and its manufacturing method WO2008139906A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2008527238A JPWO2008139906A1 (en) 2007-04-27 2008-04-25 Sputtering target and manufacturing method thereof

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007120146 2007-04-27
JP2007-120146 2007-04-27

Publications (1)

Publication Number Publication Date
WO2008139906A1 true WO2008139906A1 (en) 2008-11-20

Family

ID=40002122

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/058136 WO2008139906A1 (en) 2007-04-27 2008-04-25 Sputtering target and its manufacturing method

Country Status (5)

Country Link
JP (1) JPWO2008139906A1 (en)
KR (1) KR20090020624A (en)
CN (1) CN101542012A (en)
TW (1) TW200900521A (en)
WO (1) WO2008139906A1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012172217A (en) * 2011-02-23 2012-09-10 Taiheiyo Cement Corp Sputtering target and method for producing the same

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07258826A (en) * 1994-03-18 1995-10-09 Fujitsu Ltd Production of thin film semiconductor device
JPH1046331A (en) * 1996-07-30 1998-02-17 Anelva Corp Sputter film deposition method and its device
JP2000256842A (en) * 1999-01-08 2000-09-19 Tosoh Corp Ito sputtering target, and production of ito sintered compact and transparent conductive film
JP2002371355A (en) * 2001-06-14 2002-12-26 Nitto Denko Corp Method for manufacturing transparent thin film
JP2003016858A (en) * 2001-06-29 2003-01-17 Sanyo Electric Co Ltd Manufacturing method of indium tin oxide film

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07258826A (en) * 1994-03-18 1995-10-09 Fujitsu Ltd Production of thin film semiconductor device
JPH1046331A (en) * 1996-07-30 1998-02-17 Anelva Corp Sputter film deposition method and its device
JP2000256842A (en) * 1999-01-08 2000-09-19 Tosoh Corp Ito sputtering target, and production of ito sintered compact and transparent conductive film
JP2002371355A (en) * 2001-06-14 2002-12-26 Nitto Denko Corp Method for manufacturing transparent thin film
JP2003016858A (en) * 2001-06-29 2003-01-17 Sanyo Electric Co Ltd Manufacturing method of indium tin oxide film

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012172217A (en) * 2011-02-23 2012-09-10 Taiheiyo Cement Corp Sputtering target and method for producing the same

Also Published As

Publication number Publication date
TW200900521A (en) 2009-01-01
KR20090020624A (en) 2009-02-26
JPWO2008139906A1 (en) 2010-08-05
CN101542012A (en) 2009-09-23

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