WO2008123232A1 - 半導体発光装置 - Google Patents

半導体発光装置 Download PDF

Info

Publication number
WO2008123232A1
WO2008123232A1 PCT/JP2008/055536 JP2008055536W WO2008123232A1 WO 2008123232 A1 WO2008123232 A1 WO 2008123232A1 JP 2008055536 W JP2008055536 W JP 2008055536W WO 2008123232 A1 WO2008123232 A1 WO 2008123232A1
Authority
WO
WIPO (PCT)
Prior art keywords
light emitting
semiconductor light
bonding pad
die bonding
emitting device
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Ceased
Application number
PCT/JP2008/055536
Other languages
English (en)
French (fr)
Inventor
Masahiko Kobayakawa
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Rohm Co Ltd
Original Assignee
Rohm Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Rohm Co Ltd filed Critical Rohm Co Ltd
Priority to CN200880014656A priority Critical patent/CN101675538A/zh
Priority to US12/593,836 priority patent/US8334548B2/en
Publication of WO2008123232A1 publication Critical patent/WO2008123232A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/8506Containers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/857Interconnections, e.g. lead-frames, bond wires or solder balls
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10HINORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80Constructional details
    • H10H20/85Packages
    • H10H20/858Means for heat extraction or cooling
    • H10H20/8585Means for heat extraction or cooling being an interconnection
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W90/00Package configurations
    • H10W90/701Package configurations characterised by the relative positions of pads or connectors relative to package parts
    • H10W90/751Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
    • H10W90/756Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink

Landscapes

  • Led Device Packages (AREA)

Abstract

 半導体発光装置(A)は、一定の厚さを有するリードフレーム(1)と、上記リードフレーム(1)に支持された半導体発光素子(2)と、上記リードフレーム(1)の一部を覆うケース(4)と、上記半導体発光素子(2)を覆う透光部材(5)とを備える。上記リードフレーム(1)は、ダイボンディングパッド(11a)および隆起部(11b)を含んでいる。上記ダイボンディングパッド(11a)は、上記半導体発光素子(2)を搭載する表面および上記ケース(4)から露出する裏面を有している。上記隆起部(11b)は、上記ダイボンディングパッド(11a)の上記表面の法線方向に、上記ダイボンディングパッド(11a)からオフセットして設けられている。
PCT/JP2008/055536 2007-03-30 2008-03-25 半導体発光装置 Ceased WO2008123232A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
CN200880014656A CN101675538A (zh) 2007-03-30 2008-03-25 半导体发光装置
US12/593,836 US8334548B2 (en) 2007-03-30 2008-03-25 Semiconductor light emitting device

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-092880 2007-03-30
JP2007092880A JP4795293B2 (ja) 2007-03-30 2007-03-30 半導体発光装置

Publications (1)

Publication Number Publication Date
WO2008123232A1 true WO2008123232A1 (ja) 2008-10-16

Family

ID=39830725

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/055536 Ceased WO2008123232A1 (ja) 2007-03-30 2008-03-25 半導体発光装置

Country Status (5)

Country Link
US (1) US8334548B2 (ja)
JP (1) JP4795293B2 (ja)
CN (1) CN101675538A (ja)
TW (1) TW200905927A (ja)
WO (1) WO2008123232A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011233852A (ja) * 2010-01-29 2011-11-17 Toshiba Corp Ledパッケージ
JP2012004596A (ja) * 2010-01-29 2012-01-05 Toshiba Corp Ledパッケージ及びその製造方法
JP2012160625A (ja) * 2011-02-02 2012-08-23 Nichia Chem Ind Ltd 発光装置

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101546795B (zh) * 2008-03-25 2011-02-16 旭丽电子(广州)有限公司 半导体发光元件
DE102008048259B4 (de) * 2008-09-22 2024-10-02 OSRAM Opto Semiconductors Gesellschaft mit beschränkter Haftung Gehäuse für ein optoelektronisches Bauteil, seitlich emittierendes Bauteil mit einem Gehäuse und Verfahren zur Herstellung eines Gehäuses
KR101719644B1 (ko) 2010-05-24 2017-04-04 서울반도체 주식회사 Led패키지
CN102610602A (zh) * 2011-01-25 2012-07-25 四川柏狮光电技术有限公司 单一封装材质高解析度led光源及其制备工艺
JP6295171B2 (ja) * 2014-09-16 2018-03-14 アルパッド株式会社 発光ユニット及び半導体発光装置
KR102374676B1 (ko) * 2015-01-05 2022-03-16 서울반도체 주식회사 발광 다이오드 패키지 및 그 제조 방법
KR102426874B1 (ko) * 2015-08-28 2022-07-29 쑤저우 레킨 세미컨덕터 컴퍼니 리미티드 발광 소자 패키지

Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11103097A (ja) * 1997-07-30 1999-04-13 Rohm Co Ltd 半導体発光素子
JPH11346006A (ja) * 1998-05-29 1999-12-14 Rohm Co Ltd 半導体装置
JPH11346008A (ja) * 1998-05-29 1999-12-14 Rohm Co Ltd 半導体装置
JP2001185763A (ja) * 1999-12-27 2001-07-06 Toshiba Electronic Engineering Corp 光半導体パッケージ
JP2003110145A (ja) * 2001-09-27 2003-04-11 Harvatek Corp 発光ダイオード用の翼形表面実装パッケージ
JP2003209293A (ja) * 2002-01-17 2003-07-25 Stanley Electric Co Ltd 発光ダイオード
JP2004128474A (ja) * 2002-07-29 2004-04-22 Yamaha Corp 磁気センサの製造方法およびリードフレーム
JP2005294736A (ja) * 2004-04-05 2005-10-20 Stanley Electric Co Ltd 半導体発光装置の製造方法
JP2006004987A (ja) * 2004-06-15 2006-01-05 Matsushita Electric Ind Co Ltd 光半導体素子用パッケージとそれを用いた発光装置

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW414924B (en) * 1998-05-29 2000-12-11 Rohm Co Ltd Semiconductor device of resin package
JP2002314143A (ja) * 2001-04-09 2002-10-25 Toshiba Corp 発光装置
US7187063B2 (en) 2002-07-29 2007-03-06 Yamaha Corporation Manufacturing method for magnetic sensor and lead frame therefor
JP3790199B2 (ja) * 2002-08-29 2006-06-28 株式会社東芝 光半導体装置及び光半導体モジュール
JP2006313943A (ja) 2003-02-18 2006-11-16 Sharp Corp 半導体発光装置、その製造方法および電子撮像装置
JP4645071B2 (ja) * 2003-06-20 2011-03-09 日亜化学工業株式会社 パッケージ成型体およびそれを用いた半導体装置
CN1652357A (zh) 2004-02-05 2005-08-10 炬鑫科技股份有限公司 可替换式发光二极管封装结构
US7868343B2 (en) * 2004-04-06 2011-01-11 Cree, Inc. Light-emitting devices having multiple encapsulation layers with at least one of the encapsulation layers including nanoparticles and methods of forming the same
JP2006319224A (ja) * 2005-05-13 2006-11-24 Citizen Electronics Co Ltd 白色発光ダイオード
JP2007027535A (ja) * 2005-07-20 2007-02-01 Stanley Electric Co Ltd 光半導体装置
JP4739851B2 (ja) * 2005-07-29 2011-08-03 スタンレー電気株式会社 表面実装型半導体装置
JP5038623B2 (ja) * 2005-12-27 2012-10-03 株式会社東芝 光半導体装置およびその製造方法
KR100735325B1 (ko) * 2006-04-17 2007-07-04 삼성전기주식회사 발광다이오드 패키지 및 그 제조방법
JP4830768B2 (ja) * 2006-05-10 2011-12-07 日亜化学工業株式会社 半導体発光装置及び半導体発光装置の製造方法
US7800304B2 (en) * 2007-01-12 2010-09-21 Avago Technologies Ecbu Ip (Singapore) Pte. Ltd. Multi-chip packaged LED light source

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11103097A (ja) * 1997-07-30 1999-04-13 Rohm Co Ltd 半導体発光素子
JPH11346006A (ja) * 1998-05-29 1999-12-14 Rohm Co Ltd 半導体装置
JPH11346008A (ja) * 1998-05-29 1999-12-14 Rohm Co Ltd 半導体装置
JP2001185763A (ja) * 1999-12-27 2001-07-06 Toshiba Electronic Engineering Corp 光半導体パッケージ
JP2003110145A (ja) * 2001-09-27 2003-04-11 Harvatek Corp 発光ダイオード用の翼形表面実装パッケージ
JP2003209293A (ja) * 2002-01-17 2003-07-25 Stanley Electric Co Ltd 発光ダイオード
JP2004128474A (ja) * 2002-07-29 2004-04-22 Yamaha Corp 磁気センサの製造方法およびリードフレーム
JP2005294736A (ja) * 2004-04-05 2005-10-20 Stanley Electric Co Ltd 半導体発光装置の製造方法
JP2006004987A (ja) * 2004-06-15 2006-01-05 Matsushita Electric Ind Co Ltd 光半導体素子用パッケージとそれを用いた発光装置

Cited By (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011233852A (ja) * 2010-01-29 2011-11-17 Toshiba Corp Ledパッケージ
JP2012004596A (ja) * 2010-01-29 2012-01-05 Toshiba Corp Ledパッケージ及びその製造方法
US8497521B2 (en) 2010-01-29 2013-07-30 Kabushiki Kaisha Toshiba LED package
JP2012160625A (ja) * 2011-02-02 2012-08-23 Nichia Chem Ind Ltd 発光装置
US9091419B2 (en) 2011-02-02 2015-07-28 Nichia Corporation Light emitting device

Also Published As

Publication number Publication date
CN101675538A (zh) 2010-03-17
US8334548B2 (en) 2012-12-18
JP4795293B2 (ja) 2011-10-19
JP2008251938A (ja) 2008-10-16
US20100044737A1 (en) 2010-02-25
TW200905927A (en) 2009-02-01

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