WO2008120445A1 - センサの取付構造及び真空成膜装置 - Google Patents

センサの取付構造及び真空成膜装置 Download PDF

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Publication number
WO2008120445A1
WO2008120445A1 PCT/JP2008/000480 JP2008000480W WO2008120445A1 WO 2008120445 A1 WO2008120445 A1 WO 2008120445A1 JP 2008000480 W JP2008000480 W JP 2008000480W WO 2008120445 A1 WO2008120445 A1 WO 2008120445A1
Authority
WO
WIPO (PCT)
Prior art keywords
film deposition
base material
sensor
fixing structure
sensor fixing
Prior art date
Application number
PCT/JP2008/000480
Other languages
English (en)
French (fr)
Inventor
Yasuhiro Koizumi
Kouichi Nose
Original Assignee
Shinmaywa Industries, Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Shinmaywa Industries, Ltd. filed Critical Shinmaywa Industries, Ltd.
Priority to JP2008529071A priority Critical patent/JPWO2008120445A1/ja
Priority to CN2008800010913A priority patent/CN101558185B/zh
Publication of WO2008120445A1 publication Critical patent/WO2008120445A1/ja

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/54—Controlling or regulating the coating process
    • C23C14/542—Controlling the film thickness or evaporation rate
    • C23C14/545—Controlling the film thickness or evaporation rate using measurement on deposited material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders

Landscapes

  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physical Vapour Deposition (AREA)
  • Measuring Temperature Or Quantity Of Heat (AREA)

Abstract

　本発明のセンサの取付構造（５０）は、基材（２１ａ）をその内部を流れる冷却流体により冷却するようにして保持する基材ホルダ（６ａ）と、基材（２１ａ）上への成膜に関連する物理量（以下、成膜関連物理量）を検出するセンサ（５５）と、成膜関連物理量を伝達可能なようにセンサ（５５）と一体化されかつ成膜関連物理量を伝送信号に変換する変換器（５４）と、センサ（５５）がその外部に露出するようにして変換器（５４）をその内部に収容する容器（５２）と、を備え、容器（５２）がこれを冷却流体によって冷却することが可能なように基材ホルダ（６ａ）に取り付けられている。
PCT/JP2008/000480 2007-03-29 2008-03-07 センサの取付構造及び真空成膜装置 WO2008120445A1 (ja)

Priority Applications (2)

Application Number Priority Date Filing Date Title
JP2008529071A JPWO2008120445A1 (ja) 2007-03-29 2008-03-07 センサの取付構造及び真空成膜装置
CN2008800010913A CN101558185B (zh) 2007-03-29 2008-03-07 传感器安装结构以及真空成膜装置

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2007-089806 2007-03-29
JP2007089806 2007-03-29

Publications (1)

Publication Number Publication Date
WO2008120445A1 true WO2008120445A1 (ja) 2008-10-09

Family

ID=39808032

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/JP2008/000480 WO2008120445A1 (ja) 2007-03-29 2008-03-07 センサの取付構造及び真空成膜装置

Country Status (5)

Country Link
JP (1) JPWO2008120445A1 (ja)
KR (1) KR101008914B1 (ja)
CN (1) CN101558185B (ja)
TW (1) TW200902745A (ja)
WO (1) WO2008120445A1 (ja)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011032560A (ja) * 2009-08-05 2011-02-17 Shinmaywa Industries Ltd 給電機構および真空処理装置
JP2020153716A (ja) * 2019-03-18 2020-09-24 東京エレクトロン株式会社 温度測定機構、温度測定方法、およびステージ装置
JP2021113740A (ja) * 2020-01-20 2021-08-05 中外炉工業株式会社 センサー部材装着構造

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7304261B2 (ja) * 2019-10-07 2023-07-06 キヤノントッキ株式会社 成膜装置、成膜方法および電子デバイスの製造方法
JP7288834B2 (ja) * 2019-10-07 2023-06-08 キヤノントッキ株式会社 成膜装置、成膜方法および電子デバイスの製造方法
CN113386041B (zh) * 2021-06-30 2022-05-17 重庆天力通科技开发有限公司 一种具有环保功能的齿坯加工用抛光装置

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003045954A (ja) * 2001-03-14 2003-02-14 Asm Internatl Nv 基板を処理するプロセス装置の検査システム、およびこの検査システムのためのセンサ、ならびにプロセス装置の検査方法
JP2003301258A (ja) * 2002-04-12 2003-10-24 Shin Meiwa Ind Co Ltd 真空成膜装置
JP2004111630A (ja) * 2002-09-18 2004-04-08 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
JP2005082837A (ja) * 2003-09-05 2005-03-31 Shin Meiwa Ind Co Ltd 真空成膜方法、装置、及びそれらを用いて製造されたフィルタ
JP2005518583A (ja) * 2002-02-22 2005-06-23 アイクストロン、アーゲー 処理パラメータの無線収集による薄い皮膜の沈積装置

Family Cites Families (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH09324267A (ja) * 1996-06-06 1997-12-16 Nippon Telegr & Teleph Corp <Ntt> 積層薄膜の製造装置とそれを用いた積層薄膜の作製方法
JPH10102242A (ja) 1996-09-27 1998-04-21 Asahi Optical Co Ltd 真空蒸着装置
JP4152730B2 (ja) 2002-11-28 2008-09-17 新明和工業株式会社 真空成膜装置
JP2004193307A (ja) 2002-12-11 2004-07-08 Matsushita Electric Ind Co Ltd 薄膜製造装置
CN1266306C (zh) * 2003-05-19 2006-07-26 力晶半导体股份有限公司 溅镀装置及其使用此装置的金属层/金属化合物层的制造方法
JP4361811B2 (ja) * 2004-01-09 2009-11-11 東京エレクトロン株式会社 半導体製造装置

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2003045954A (ja) * 2001-03-14 2003-02-14 Asm Internatl Nv 基板を処理するプロセス装置の検査システム、およびこの検査システムのためのセンサ、ならびにプロセス装置の検査方法
JP2005518583A (ja) * 2002-02-22 2005-06-23 アイクストロン、アーゲー 処理パラメータの無線収集による薄い皮膜の沈積装置
JP2003301258A (ja) * 2002-04-12 2003-10-24 Shin Meiwa Ind Co Ltd 真空成膜装置
JP2004111630A (ja) * 2002-09-18 2004-04-08 Hitachi Kokusai Electric Inc 基板処理装置および半導体装置の製造方法
JP2005082837A (ja) * 2003-09-05 2005-03-31 Shin Meiwa Ind Co Ltd 真空成膜方法、装置、及びそれらを用いて製造されたフィルタ

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011032560A (ja) * 2009-08-05 2011-02-17 Shinmaywa Industries Ltd 給電機構および真空処理装置
JP2020153716A (ja) * 2019-03-18 2020-09-24 東京エレクトロン株式会社 温度測定機構、温度測定方法、およびステージ装置
JP7154160B2 (ja) 2019-03-18 2022-10-17 東京エレクトロン株式会社 温度測定機構、温度測定方法、およびステージ装置
JP2021113740A (ja) * 2020-01-20 2021-08-05 中外炉工業株式会社 センサー部材装着構造

Also Published As

Publication number Publication date
KR20080104291A (ko) 2008-12-02
CN101558185A (zh) 2009-10-14
CN101558185B (zh) 2011-09-07
TW200902745A (en) 2009-01-16
KR101008914B1 (ko) 2011-01-17
JPWO2008120445A1 (ja) 2010-07-15

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