WO2008117351A1 - 有機エレクトロルミネッセンス（ｅｌ）素子及びその製造方法 - Google Patents

有機エレクトロルミネッセンス（ｅｌ）素子及びその製造方法 Download PDF

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Publication number
WO2008117351A1
WO2008117351A1 PCT/JP2007/055842 JP2007055842W WO2008117351A1 WO 2008117351 A1 WO2008117351 A1 WO 2008117351A1 JP 2007055842 W JP2007055842 W JP 2007055842W WO 2008117351 A1 WO2008117351 A1 WO 2008117351A1
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WIPO (PCT)
Prior art keywords
electrode
organic
sublimates
layer
short circuit
Prior art date
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Ceased
Application number
PCT/JP2007/055842
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English (en)
French (fr)
Inventor
Satoshi Miyaguchi
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Pioneer Corp
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Pioneer Corp
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Filing date
Publication date
Application filed by Pioneer Corp filed Critical Pioneer Corp
Priority to KR1020097021780A priority Critical patent/KR101084473B1/ko
Priority to PCT/JP2007/055842 priority patent/WO2008117351A1/ja
Priority to US12/450,287 priority patent/US20110018434A1/en
Priority to JP2009506064A priority patent/JP4994441B2/ja
Publication of WO2008117351A1 publication Critical patent/WO2008117351A1/ja
Anticipated expiration legal-status Critical
Ceased legal-status Critical Current

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/10—OLEDs or polymer light-emitting diodes [PLED]
    • H10K50/11—OLEDs or polymer light-emitting diodes [PLED] characterised by the electroluminescent [EL] layers
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/12—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material
    • H05B3/14—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor characterised by the composition or nature of the conductive material the material being non-metallic
    • H05B3/146—Conductive polymers, e.g. polyethylene, thermoplastics
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B33/00—Electroluminescent light sources
    • H05B33/02—Details
    • H05B33/04—Sealing arrangements, e.g. against humidity
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10D—INORGANIC ELECTRIC SEMICONDUCTOR DEVICES
    • H10D1/00—Resistors, capacitors or inductors
    • H10D1/60—Capacitors
    • H10D1/68—Capacitors having no potential barriers
    • H10D1/682—Capacitors having no potential barriers having dielectrics comprising perovskite structures
    • H10D1/684—Capacitors having no potential barriers having dielectrics comprising perovskite structures the dielectrics comprising multiple layers, e.g. comprising buffer layers, seed layers or gradient layers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F77/00—Constructional details of devices covered by this subclass
    • H10F77/20—Electrodes
    • H10F77/244—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers
    • H10F77/247—Electrodes made of transparent conductive layers, e.g. transparent conductive oxide [TCO] layers comprising indium tin oxide [ITO]
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10H—INORGANIC LIGHT-EMITTING SEMICONDUCTOR DEVICES HAVING POTENTIAL BARRIERS
    • H10H20/00—Individual inorganic light-emitting semiconductor devices having potential barriers, e.g. light-emitting diodes [LED]
    • H10H20/80—Constructional details
    • H10H20/85—Packages
    • H10H20/852—Encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K50/00—Organic light-emitting devices
    • H10K50/80—Constructional details
    • H10K50/805—Electrodes
    • H10K50/82—Cathodes
    • H10K50/826—Multilayers, e.g. opaque multilayers
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/861—Repairing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/341—Short-circuit prevention
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K2102/00—Constructional details relating to the organic devices covered by this subclass
    • H10K2102/301—Details of OLEDs
    • H10K2102/351—Thickness

Landscapes

  • Physics & Mathematics (AREA)
  • Optics & Photonics (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Electroluminescent Light Sources (AREA)

Abstract

【課題】リーク電流が発生しても、電気的にショートすることを抑えることのできる有機ＥＬ素子及びその製造方法を提供すること 【解決手段】基板（２）上に第１電極（３）、有機ＥＬ層（４）、第２電極（５）、前記第２電極（５）の融点よりも低い温度で昇華する材料からなる低温度昇華層（６）、の順に積層された積層構造体を、無機封止膜（７）で封止した構成とする。このように構成することにより、リーク電流が発生して局所的に第２電極が発熱した際に、低温度昇華層（６）が昇華して空隙が形成され、この空隙に第２電極（５）が拡がってオープン状態となる。その結果、電気的にショートすることが抑えられる。
PCT/JP2007/055842 2007-03-22 2007-03-22 有機エレクトロルミネッセンス（ｅｌ）素子及びその製造方法 Ceased WO2008117351A1 (ja)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020097021780A KR101084473B1 (ko) 2007-03-22 2007-03-22 유기 전계 발광(ｅｌ) 소자 및 그 제조방법
PCT/JP2007/055842 WO2008117351A1 (ja) 2007-03-22 2007-03-22 有機エレクトロルミネッセンス（ｅｌ）素子及びその製造方法
US12/450,287 US20110018434A1 (en) 2007-03-22 2007-03-22 Organic electroluminescence (el) element and manufacturing method thereof
JP2009506064A JP4994441B2 (ja) 2007-03-22 2007-03-22 有機エレクトロルミネッセンス（ｅｌ）素子及びその製造方法

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
PCT/JP2007/055842 WO2008117351A1 (ja) 2007-03-22 2007-03-22 有機エレクトロルミネッセンス（ｅｌ）素子及びその製造方法

Publications (1)

Publication Number Publication Date
WO2008117351A1 true WO2008117351A1 (ja) 2008-10-02

Family

ID=39788096

Family Applications (1)

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PCT/JP2007/055842 Ceased WO2008117351A1 (ja) 2007-03-22 2007-03-22 有機エレクトロルミネッセンス（ｅｌ）素子及びその製造方法

Country Status (4)

Country Link
US (1) US20110018434A1 (ja)
JP (1) JP4994441B2 (ja)
KR (1) KR101084473B1 (ja)
WO (1) WO2008117351A1 (ja)

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2012190781A (ja) * 2011-12-06 2012-10-04 Pioneer Electronic Corp 有機エレクトロルミネッセンスデバイス
JP2012199233A (ja) * 2011-03-07 2012-10-18 Semiconductor Energy Lab Co Ltd 発光素子および発光装置
US9035337B2 (en) 2011-02-14 2015-05-19 Semiconductor Energy Laboratory Co., Ltd. Light-emitting module, light-emitting panel, and lighting device
JP2016139621A (ja) * 2016-03-31 2016-08-04 パイオニア株式会社 有機エレクトロルミネッセンスデバイス

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101430173B1 (ko) 2010-10-19 2014-08-13 삼성디스플레이 주식회사 유기 발광 표시 장치
JP5708602B2 (ja) * 2012-09-20 2015-04-30 株式会社デンソー 有機ｅｌ表示装置及びその製造方法
KR102343754B1 (ko) * 2014-09-30 2021-12-24 엘지디스플레이 주식회사 유기 발광 표시 장치 및 유기 발광 표시 장치의 제조 방법
KR102320410B1 (ko) * 2014-11-07 2021-11-02 엘지디스플레이 주식회사 유기 발광 표시 장치의 제조방법
KR102587876B1 (ko) * 2016-10-31 2023-10-11 엘지디스플레이 주식회사 리페어 영역을 포함하는 유기 발광 표시 장치
TWI629811B (zh) * 2017-03-21 2018-07-11 機光科技股份有限公司 Organic light emitting device
CN109427994B (zh) * 2017-08-29 2023-08-08 固安翌光科技有限公司 一种有机光电器件
JP2022076273A (ja) * 2020-11-09 2022-05-19 株式会社Joled 自発光型表示パネル、及び自発光型表示パネルの製造方法
KR20230078262A (ko) * 2021-11-26 2023-06-02 엘지디스플레이 주식회사 투명 표시 장치

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63126191A (ja) * 1986-11-14 1988-05-30 アルプス電気株式会社 Ｅｌ素子
JP2003151779A (ja) * 2001-11-15 2003-05-23 Sharp Corp 有機ｌｅｄ素子、転写用ドナー基板及び有機ｌｅｄ素子の製造方法
JP2003178886A (ja) * 2001-12-07 2003-06-27 Denso Corp 有機ｅｌ素子およびその製造方法
JP2003282253A (ja) * 2002-01-15 2003-10-03 Denso Corp 有機ｅｌ素子の製造方法
JP2004214084A (ja) * 2003-01-07 2004-07-29 Denso Corp 有機ｅｌ表示装置
JP2005011573A (ja) * 2003-06-17 2005-01-13 Seiko Epson Corp 有機ｅｌ装置とその製造方法及び電子機器
JP2006339049A (ja) * 2005-06-02 2006-12-14 Tokki Corp 封止膜形成装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH07272858A (ja) * 1994-03-31 1995-10-20 Nippondenso Co Ltd エレクトロルミネッセンス素子とその製造方法
JP4004709B2 (ja) * 2000-03-30 2007-11-07 パイオニア株式会社 有機エレクトロルミネッセンス表示パネル及びその製造方法
US20040099862A1 (en) * 2002-11-27 2004-05-27 Harumi Suzuki Organic EL device and repair method thereof

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS63126191A (ja) * 1986-11-14 1988-05-30 アルプス電気株式会社 Ｅｌ素子
JP2003151779A (ja) * 2001-11-15 2003-05-23 Sharp Corp 有機ｌｅｄ素子、転写用ドナー基板及び有機ｌｅｄ素子の製造方法
JP2003178886A (ja) * 2001-12-07 2003-06-27 Denso Corp 有機ｅｌ素子およびその製造方法
JP2003282253A (ja) * 2002-01-15 2003-10-03 Denso Corp 有機ｅｌ素子の製造方法
JP2004214084A (ja) * 2003-01-07 2004-07-29 Denso Corp 有機ｅｌ表示装置
JP2005011573A (ja) * 2003-06-17 2005-01-13 Seiko Epson Corp 有機ｅｌ装置とその製造方法及び電子機器
JP2006339049A (ja) * 2005-06-02 2006-12-14 Tokki Corp 封止膜形成装置

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US9035337B2 (en) 2011-02-14 2015-05-19 Semiconductor Energy Laboratory Co., Ltd. Light-emitting module, light-emitting panel, and lighting device
US9735209B2 (en) 2011-02-14 2017-08-15 Semiconductor Energy Laboratory Co., Ltd. Light-emitting module, light-emitting panel, and lighting device
JP2012199233A (ja) * 2011-03-07 2012-10-18 Semiconductor Energy Lab Co Ltd 発光素子および発光装置
US8866171B2 (en) 2011-03-07 2014-10-21 Semiconductor Energy Laboratory Co., Ltd. Light-emitting element and light-emitting device
JP2012190781A (ja) * 2011-12-06 2012-10-04 Pioneer Electronic Corp 有機エレクトロルミネッセンスデバイス
JP2016139621A (ja) * 2016-03-31 2016-08-04 パイオニア株式会社 有機エレクトロルミネッセンスデバイス

Also Published As

Publication number Publication date
KR101084473B1 (ko) 2011-11-21
US20110018434A1 (en) 2011-01-27
JPWO2008117351A1 (ja) 2010-07-08
KR20100007860A (ko) 2010-01-22
JP4994441B2 (ja) 2012-08-08

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